JP4749037B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4749037B2 JP4749037B2 JP2005157408A JP2005157408A JP4749037B2 JP 4749037 B2 JP4749037 B2 JP 4749037B2 JP 2005157408 A JP2005157408 A JP 2005157408A JP 2005157408 A JP2005157408 A JP 2005157408A JP 4749037 B2 JP4749037 B2 JP 4749037B2
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- magnetic field
- magnetization
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Description
S.Tehrani et al.,"High density submicron magnetoresistive random access memory (invited)", Journal of Applied Physics, vol.85, No.8, 15 April 1999, pp.5822-5827 ISSCC 2001 Dig of Tech. Papers, p.122 E.Y.Chen et al.,"Submicron spin valve magnetoresitive random access memory cell", Journal of Applied Physics, vol.81, No.8, 15 April 1997, pp.3992-3994
Claims (3)
- 交差する2本の書込線の間に配置され、前記2本の書込線に流される電流の方向に応じて磁化方向が変化する記録層と、トンネル絶縁層と、磁化方向が固定された固着層とが順次積層された強磁性トンネル接合素子を備えた半導体装置において、
前記記録層の磁化容易軸方向の長さが磁化困難軸方向の長さよりも短く、
前記記録層の磁化方向は無磁界において短辺方向であり、
前記記録層の磁気異方性は、前記記録層の形成時および熱処理時に磁界を印加することにより付与されていることを特徴とする、半導体装置。 - 前記記録層は、Co元素もしくはFe元素を主成分とする磁性層を含むことを特徴とする、請求項1に記載の半導体装置。
- 前記記録層は、順次積層された第1の強磁性層と非磁性層と第2の強磁性層とを含み、前記第1および第2の強磁性層は反平行結合していることを特徴とする、請求項1または請求項2に記載の半導体装置。
Priority Applications (1)
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JP2005157408A JP4749037B2 (ja) | 2005-05-30 | 2005-05-30 | 半導体装置 |
Applications Claiming Priority (1)
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JP2005157408A JP4749037B2 (ja) | 2005-05-30 | 2005-05-30 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2006332522A JP2006332522A (ja) | 2006-12-07 |
JP4749037B2 true JP4749037B2 (ja) | 2011-08-17 |
Family
ID=37553865
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2005157408A Expired - Fee Related JP4749037B2 (ja) | 2005-05-30 | 2005-05-30 | 半導体装置 |
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JP (1) | JP4749037B2 (ja) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09305933A (ja) * | 1996-05-20 | 1997-11-28 | Sony Corp | 磁気抵抗効果素子 |
US7095646B2 (en) * | 2002-07-17 | 2006-08-22 | Freescale Semiconductor, Inc. | Multi-state magnetoresistance random access cell with improved memory storage density |
JP3931876B2 (ja) * | 2002-11-01 | 2007-06-20 | 日本電気株式会社 | 磁気抵抗デバイス及びその製造方法 |
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2005
- 2005-05-30 JP JP2005157408A patent/JP4749037B2/ja not_active Expired - Fee Related
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JP2006332522A (ja) | 2006-12-07 |
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