JP4748967B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4748967B2
JP4748967B2 JP2004311126A JP2004311126A JP4748967B2 JP 4748967 B2 JP4748967 B2 JP 4748967B2 JP 2004311126 A JP2004311126 A JP 2004311126A JP 2004311126 A JP2004311126 A JP 2004311126A JP 4748967 B2 JP4748967 B2 JP 4748967B2
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Japan
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conductive film
layer
insulating film
mask
film
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Japanese (ja)
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JP2005159326A (ja
JP2005159326A5 (enExample
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明 石川
哲司 山口
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2005159326A5 publication Critical patent/JP2005159326A5/ja
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2004311126A 2003-11-04 2004-10-26 半導体装置の作製方法 Expired - Fee Related JP4748967B2 (ja)

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JP2004311126A JP4748967B2 (ja) 2003-11-04 2004-10-26 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003375038 2003-11-04
JP2003375038 2003-11-04
JP2004311126A JP4748967B2 (ja) 2003-11-04 2004-10-26 半導体装置の作製方法

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JP2005159326A JP2005159326A (ja) 2005-06-16
JP2005159326A5 JP2005159326A5 (enExample) 2007-08-16
JP4748967B2 true JP4748967B2 (ja) 2011-08-17

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JP2004311126A Expired - Fee Related JP4748967B2 (ja) 2003-11-04 2004-10-26 半導体装置の作製方法

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1760798B1 (en) * 2005-08-31 2012-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP1793266B1 (en) * 2005-12-05 2017-03-08 Semiconductor Energy Laboratory Co., Ltd. Transflective Liquid Crystal Display with a Horizontal Electric Field Configuration
CN102646698B (zh) * 2007-09-14 2015-09-16 株式会社半导体能源研究所 半导体装置及电子设备
JP2009224238A (ja) * 2008-03-18 2009-10-01 Toppan Printing Co Ltd 有機エレクトロルミネッセンス素子及びその製造方法
JP5429454B2 (ja) * 2009-04-17 2014-02-26 ソニー株式会社 薄膜トランジスタの製造方法および薄膜トランジスタ
WO2011043194A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2019220266A1 (ja) * 2018-05-18 2019-11-21 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US11251200B2 (en) * 2019-05-23 2022-02-15 Tokyo Electron Limited Coaxial contacts for 3D logic and memory

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07109828B2 (ja) * 1988-09-14 1995-11-22 日本電気株式会社 多層配線構造体の製造方法
JPH08181213A (ja) * 1994-12-27 1996-07-12 Kawasaki Steel Corp 半導体装置の製造方法
JPH08274164A (ja) * 1995-03-31 1996-10-18 Seiko Epson Corp 半導体装置
JPH08306779A (ja) * 1995-05-10 1996-11-22 Sony Corp 半導体装置の製造方法
JP2000012683A (ja) * 1998-06-17 2000-01-14 Nec Corp 集積回路とその製造方法

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