JP4748847B2 - Ｅｌ表示装置および電気器具 - Google Patents
Ｅｌ表示装置および電気器具 Download PDFInfo
- Publication number
- JP4748847B2 JP4748847B2 JP2000381101A JP2000381101A JP4748847B2 JP 4748847 B2 JP4748847 B2 JP 4748847B2 JP 2000381101 A JP2000381101 A JP 2000381101A JP 2000381101 A JP2000381101 A JP 2000381101A JP 4748847 B2 JP4748847 B2 JP 4748847B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- display device
- layer
- tft
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010408 film Substances 0.000 claims description 262
- 229910052751 metal Inorganic materials 0.000 claims description 60
- 239000002184 metal Substances 0.000 claims description 60
- 239000010409 thin film Substances 0.000 claims description 20
- 150000001875 compounds Chemical class 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 229910003437 indium oxide Inorganic materials 0.000 claims description 9
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 9
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 9
- 229910001887 tin oxide Inorganic materials 0.000 claims description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 111
- 239000000758 substrate Substances 0.000 description 73
- 238000000034 method Methods 0.000 description 43
- 239000012535 impurity Substances 0.000 description 26
- 239000011159 matrix material Substances 0.000 description 25
- 239000000463 material Substances 0.000 description 23
- 230000015572 biosynthetic process Effects 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- 238000002347 injection Methods 0.000 description 16
- 239000007924 injection Substances 0.000 description 16
- 238000002161 passivation Methods 0.000 description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
- 239000011229 interlayer Substances 0.000 description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- 239000011368 organic material Substances 0.000 description 14
- 229920000642 polymer Polymers 0.000 description 14
- 239000010936 titanium Substances 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 229910021419 crystalline silicon Inorganic materials 0.000 description 10
- 238000002425 crystallisation Methods 0.000 description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 239000002585 base Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 238000001994 activation Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 238000007740 vapor deposition Methods 0.000 description 8
- 230000004913 activation Effects 0.000 description 7
- 239000012298 atmosphere Substances 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000011651 chromium Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 238000005070 sampling Methods 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 239000003513 alkali Substances 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 230000005525 hole transport Effects 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- -1 polyparaphenylene vinylene Polymers 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005984 hydrogenation reaction Methods 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000000872 buffer Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 239000000565 sealant Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910020286 SiOxNy Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 2
- 229910001632 barium fluoride Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 229910001634 calcium fluoride Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002274 desiccant Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- YLYPIBBGWLKELC-RMKNXTFCSA-N 2-[2-[(e)-2-[4-(dimethylamino)phenyl]ethenyl]-6-methylpyran-4-ylidene]propanedinitrile Chemical compound C1=CC(N(C)C)=CC=C1\C=C\C1=CC(=C(C#N)C#N)C=C(C)O1 YLYPIBBGWLKELC-RMKNXTFCSA-N 0.000 description 1
- PYRKKGOKRMZEIT-UHFFFAOYSA-N 2-[6-(2-cyclopropylethoxy)-9-(2-hydroxy-2-methylpropyl)-1h-phenanthro[9,10-d]imidazol-2-yl]-5-fluorobenzene-1,3-dicarbonitrile Chemical compound C1=C2C3=CC(CC(C)(O)C)=CC=C3C=3NC(C=4C(=CC(F)=CC=4C#N)C#N)=NC=3C2=CC=C1OCCC1CC1 PYRKKGOKRMZEIT-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- KOPBYBDAPCDYFK-UHFFFAOYSA-N caesium oxide Chemical compound [O-2].[Cs+].[Cs+] KOPBYBDAPCDYFK-UHFFFAOYSA-N 0.000 description 1
- 229910001942 caesium oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- YMWUJEATGCHHMB-UHFFFAOYSA-N dichloromethane Substances ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000001093 holography Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- VOFUROIFQGPCGE-UHFFFAOYSA-N nile red Chemical compound C1=CC=C2C3=NC4=CC=C(N(CC)CC)C=C4OC3=CC(=O)C2=C1 VOFUROIFQGPCGE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- UFQXGXDIJMBKTC-UHFFFAOYSA-N oxostrontium Chemical compound [Sr]=O UFQXGXDIJMBKTC-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Images
Landscapes
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000381101A JP4748847B2 (ja) | 1999-12-15 | 2000-12-14 | Ｅｌ表示装置および電気器具 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11-356732 | 1999-12-15 | ||
| JP1999356732 | 1999-12-15 | ||
| JP35673299 | 1999-12-15 | ||
| JP2000381101A JP4748847B2 (ja) | 1999-12-15 | 2000-12-14 | Ｅｌ表示装置および電気器具 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011036987A Division JP5292421B2 (ja) | 1999-12-15 | 2011-02-23 | Ｅｌ表示装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001236027A JP2001236027A (ja) | 2001-08-31 |
| JP2001236027A5 JP2001236027A5 (enrdf_load_stackoverflow) | 2007-11-22 |
| JP4748847B2 true JP4748847B2 (ja) | 2011-08-17 |
Family
ID=26580490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000381101A Expired - Fee Related JP4748847B2 (ja) | 1999-12-15 | 2000-12-14 | Ｅｌ表示装置および電気器具 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4748847B2 (enrdf_load_stackoverflow) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002352963A (ja) * | 2001-05-23 | 2002-12-06 | Sony Corp | 表示装置 |
| JP2003076301A (ja) * | 2001-09-07 | 2003-03-14 | Matsushita Electric Ind Co Ltd | 発光素子、及びそれを用いた表示装置 |
| JP4451054B2 (ja) * | 2001-11-09 | 2010-04-14 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
| CN101009322B (zh) * | 2001-11-09 | 2012-06-27 | 株式会社半导体能源研究所 | 发光器件 |
| JP4493905B2 (ja) * | 2001-11-09 | 2010-06-30 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
| JP4149168B2 (ja) | 2001-11-09 | 2008-09-10 | 株式会社半導体エネルギー研究所 | 発光装置 |
| US7042024B2 (en) | 2001-11-09 | 2006-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus and method for manufacturing the same |
| CN1432984A (zh) | 2002-01-18 | 2003-07-30 | 株式会社半导体能源研究所 | 发光器件 |
| JP4490403B2 (ja) * | 2002-01-18 | 2010-06-23 | 株式会社半導体エネルギー研究所 | 発光装置 |
| US7592980B2 (en) | 2002-06-05 | 2009-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP4588300B2 (ja) * | 2002-06-05 | 2010-11-24 | 株式会社半導体エネルギー研究所 | 半導体装置、電子機器 |
| JP4214741B2 (ja) * | 2002-08-27 | 2009-01-28 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| KR20040025383A (ko) * | 2002-09-19 | 2004-03-24 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 및 그 제조방법 |
| JP2006113597A (ja) * | 2002-09-25 | 2006-04-27 | Seiko Epson Corp | 発光装置 |
| JP4224831B2 (ja) * | 2002-09-25 | 2009-02-18 | セイコーエプソン株式会社 | 発光装置 |
| JP3922374B2 (ja) * | 2002-09-25 | 2007-05-30 | セイコーエプソン株式会社 | 電気光学装置、マトリクス基板、及び電子機器 |
| JP4338997B2 (ja) | 2003-03-17 | 2009-10-07 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| JP5057631B2 (ja) * | 2003-03-19 | 2012-10-24 | 株式会社半導体エネルギー研究所 | 表示装置 |
| EP1607931B1 (en) | 2003-03-26 | 2014-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Device substrate and light-emitting device |
| US7619258B2 (en) * | 2004-03-16 | 2009-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US7268498B2 (en) * | 2004-04-28 | 2007-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| KR100611657B1 (ko) | 2004-06-30 | 2006-08-10 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 소자 및 그 제조방법 |
| JP4265515B2 (ja) * | 2004-09-29 | 2009-05-20 | カシオ計算機株式会社 | ディスプレイパネル |
| KR100721948B1 (ko) | 2005-08-30 | 2007-05-25 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 및 그의 제조 방법 |
| JP2007147814A (ja) * | 2005-11-25 | 2007-06-14 | Seiko Epson Corp | 発光装置およびその製造方法並びに電子機器 |
| JP5194892B2 (ja) * | 2008-03-06 | 2013-05-08 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP4730407B2 (ja) * | 2008-07-17 | 2011-07-20 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| KR101564629B1 (ko) * | 2009-08-17 | 2015-10-30 | 엘지디스플레이 주식회사 | 유기전계발광소자 |
| JP2017188478A (ja) * | 2017-06-19 | 2017-10-12 | 株式会社半導体エネルギー研究所 | 発光装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61210325A (ja) * | 1985-03-15 | 1986-09-18 | Hitachi Ltd | 液晶表示素子 |
| JPH0282221A (ja) * | 1988-09-20 | 1990-03-22 | Seiko Epson Corp | 電気光学素子の配線方法 |
| JPH05299177A (ja) * | 1992-04-22 | 1993-11-12 | Sharp Corp | 薄膜エレクトロ・ルミネッセンス素子 |
| JP2689917B2 (ja) * | 1994-08-10 | 1997-12-10 | 日本電気株式会社 | アクティブマトリクス型電流制御型発光素子の駆動回路 |
| JPH09306668A (ja) * | 1996-05-13 | 1997-11-28 | Hokuriku Electric Ind Co Ltd | Ｅｌ素子とその製造方法 |
| JPH1039792A (ja) * | 1996-07-19 | 1998-02-13 | Hokuriku Electric Ind Co Ltd | Ｅｌ素子とその製造方法 |
| JP3836944B2 (ja) * | 1997-05-30 | 2006-10-25 | 出光興産株式会社 | 発光型表示装置 |
-
2000
- 2000-12-14 JP JP2000381101A patent/JP4748847B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001236027A (ja) | 2001-08-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5292421B2 (ja) | Ｅｌ表示装置 | |
| JP4748847B2 (ja) | Ｅｌ表示装置および電気器具 | |
| JP6571630B2 (ja) | Ｅｌ表示装置 | |
| JP6345837B2 (ja) | Ｅｌ表示装置 | |
| JP4942867B2 (ja) | Ｅｌ表示装置及び電子装置 | |
| JP4472073B2 (ja) | 表示装置及びその作製方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070927 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070927 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070928 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20101027 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101102 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101215 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110215 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110223 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110510 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110517 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140527 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140527 Year of fee payment: 3 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |