JP4739750B2 - I−iii−vi2化合物を基礎とする光起電性用途向け薄膜半導体の製造方法 - Google Patents
I−iii−vi2化合物を基礎とする光起電性用途向け薄膜半導体の製造方法 Download PDFInfo
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Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1872—Recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
元素Cuは、I族(周期表の1B族)の元素を表し、
元素Inおよび/または元素Gaは、III族(周期表の3B族)の元素を表し、かつ、
元素Seおよび/または元素Sは、VI族(周期表の6B族)の元素を表す。
−米国特許第4581108号明細書に記載されている、Cu、次いでIn前駆体の分離した電着または経時的電着と、それに続くSeの添加(「セレン化」と称するステップ);
−米国特許第5275714号明細書に記載されている、Se懸濁液の存在下での2元系(Cu、In)電着;
これは、一度に単一前駆体を付着させることの方が簡単だからである。
−GUILLEMOLESら、J.Appl.Phys.、79号(1996年)7293ページ
さらに、これらの刊行物は、アニーリングをセレン蒸気圧下、450℃を超える温度にて真空中で実施すると良い結果が得られると指摘している。次いで、従来のアニーリングを一元素Seの圧力下、拡散炉で実施する。しかし、このようなアニーリングは比較的時間がかかる(約1〜数時間)。
a)堆積ステップであって、最終所望の合金組成と比較して、VI族元素がわずかに過剰な組成を有する前駆体薄膜を電気分解によって基板上に堆積させ、その間に前駆体の構成元素がよく混合されてVI族元素に富む相によってナノ合金グレインが結合された構造を前駆体に付与するようにするステップと、
b)電磁放射源を使用して、前記ステップa)で得られた薄膜層の迅速なアニーリングを実施するステップであって、前記層の結晶化を改善するように、前記VI族元素を活性化させるとともに前記合金グレインの全てを反応させるのに十分な数W/cm2以上の電磁パワーを用い、かつ、前記層中において実質上前記所望の組成を得るとともにかつ前記層に光起電特性を付与するのに十分短い数十秒間以下で実施するステップと、を有することを特徴とする、光起電性用途に向けたI−III−VI2半導体合金薄膜の製造方法に関する。
− 元素が密接に結合している前駆体を準備するステップであって、この前駆体がステップb)での迅速なアニーリングに耐えることができる形態を有するステップ、および
−この前駆体を急速にアニーリングするステップであって、その結果層で満足できる結晶化を可能にしながら、アニーリング中、処理反応速度がVI族元素の(その揮発性による)外部拡散を制限するのに十分なほど速くなるステップを含む2つのステップの組合せを必要とする。
[Cu(SO4)]=1.0×10-3mol/l、[In2(SO4)3]=6.0×10-3mol/l、[H2SeO3]1.7×10-3mol/l、[Na2(SO4)]=0.1mol/l
この例では槽のpHは2である。前駆体は、硫酸水銀(I)基準電極に対して好ましくは−1ボルトの設定電位で陰極反応によって堆積させる。電流密度は、−1mA/cm2である。
−アニーリング中、パワーが余りに大きく(ゾーンA)層が分解しがちであるパワー/持続時間対、
−満足できる層の結晶化(ゾーンB)を可能にするパワー/持続時間対、および、
−正しく層(ゾーンC)をアニーリングするためにはパワーが十分でないパワー/持続時間対に対応する。
Claims (16)
- 光起電性用途向けのI−III−VI2半導体合金薄膜の製造方法であって、
a)堆積ステップであって、最終所望の合金組成I−III−VI 2 と比較して、VI族元素が10%以下過剰な組成を有する前駆体薄膜を電気分解によって基板上に堆積させ、その間に前記前駆体用の構成元素が混合されて、VI族元素に富む相によって、組成I−III−VI 2 を有するナノ合金グレインが結合された構造を前記前駆体に付与するようにするステップと、
b)電磁放射源を使用して、前記ステップa)で得られた薄膜層の迅速なアニーリングを実施するステップであって、前記層の結晶化を改善するように、前記VI族元素を活性化させるとともに前記合金グレインの全てを反応させるのに十分な数W/cm2以上の電磁パワーを用い、かつ、前記層中において実質上前記所望の組成I−III−VI 2 を得るとともにかつ前記層に光起電特性を付与するのに十分短い数十秒間以下でアニーリングを実施するステップと、
を有することを特徴とする、光起電性用途に向けたI−III−VI2半導体合金薄膜の製造方法。 - ステップa)で得られた合金グレインのほとんどが前記所望の組成に近似した組成を有する、請求項1に記載の方法。
- 前記所望の組成が、実質上CuGaxIn1-xSe2-ySy(式中、xは0から1、yは0から2である)に相当する、請求項1および2のいずれか一項に記載の方法。
- 前記前駆体の全体的組成が、若干過剰なIII族元素を含む、請求項1から3のいずれか一項に記載の方法。
- ステップa)において前記薄膜を電気化学的に堆積させる、請求項1から4のいずれか一項に記載の方法。
- ステップa)の前にモリブデン下位層を前記基板上に堆積させる、請求項5に記載の方法。
- 銅塩、およびインジウム塩および/またはガリウム塩、ならびに溶解形酸化セレンおよび/または硫黄塩を含む実質上酸性の浴中で電着を実施する、請求項3および4のいずれか一項と組み合わせる請求項5または6に記載の方法。
- 前記合金グレインが、ステップb)で得られる合金に近似した物理化学的性質を有し、かつ、一緒になってアニーリングステップb)の間の急激な温度上昇に耐えることができるマトリックスを形成する、請求項1から7のいずれか一項に記載の方法。
- ステップb)において前記層の温度を450℃を超えて上昇させる請求項3から8のいずれか一項に記載の方法。
- 前記層へ転送される前記パワーが5W/cm2より大きい請求項9に記載の方法。
- 前記層へ転送される前記パワーが、10W/cm2より大きく、持続時間は30秒より短い請求項10に記載の方法。
- 前記層へ転送される前記パワーが、20W/cm2であり、持続時間は10秒より短い請求項11に記載の方法。
- 前記基板がプラスチック材料製である、請求項1から12のいずれか一項に記載の方法。
- 前記基板が金属材料である請求項1から13のいずれか一項に記載の方法。
- 前記合金層を覆い、かつアニーリングステップb)中に前記合金層からのVI族元素の外部拡散を制限できる保護層を、ステップa)でさらに堆積させる請求項1から14のいずれか一項に記載の方法。
- 前記保護層が、少なくともアニーリングステップb)後に可溶性である、請求項15に記
載の方法。
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FR0205362A FR2839201B1 (fr) | 2002-04-29 | 2002-04-29 | Procede de fabrication de semi-conducteurs en couches minces a base de composes i-iii-vi2, pour applications photovoltaiques |
FR02/05362 | 2002-04-29 | ||
PCT/FR2003/001282 WO2003094246A1 (fr) | 2002-04-29 | 2003-04-23 | Procede de fabrication de semi-conducteurs en couches minces a base de composes i-iii-vi2, pour applications photovoltaïques |
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JP2005524244A JP2005524244A (ja) | 2005-08-11 |
JP4739750B2 true JP4739750B2 (ja) | 2011-08-03 |
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US (1) | US7026258B2 (ja) |
EP (1) | EP1500146B1 (ja) |
JP (1) | JP4739750B2 (ja) |
AU (1) | AU2003246852B2 (ja) |
CA (1) | CA2483584C (ja) |
ES (1) | ES2526694T3 (ja) |
FR (1) | FR2839201B1 (ja) |
WO (1) | WO2003094246A1 (ja) |
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US5674555A (en) * | 1995-11-30 | 1997-10-07 | University Of Delaware | Process for preparing group Ib-IIIa-VIa semiconducting films |
DE19917758C2 (de) * | 1999-04-10 | 2003-08-28 | Cis Solartechnik Gmbh | Verfahren zur Herstellung einer CuInSe2(CIS)Solarzelle |
-
2002
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- 2003-04-23 WO PCT/FR2003/001282 patent/WO2003094246A1/fr active Search and Examination
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JPH08501189A (ja) * | 1992-09-22 | 1996-02-06 | シーメンス アクチエンゲゼルシヤフト | 基板上に黄銅鉱半導体を迅速に作成する方法 |
Also Published As
Publication number | Publication date |
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US20050215079A1 (en) | 2005-09-29 |
WO2003094246A8 (fr) | 2005-04-28 |
AU2003246852A1 (en) | 2003-11-17 |
EP1500146A1 (fr) | 2005-01-26 |
EP1500146B1 (fr) | 2014-10-01 |
AU2003246852B2 (en) | 2008-04-03 |
US7026258B2 (en) | 2006-04-11 |
WO2003094246A1 (fr) | 2003-11-13 |
CA2483584C (fr) | 2012-06-05 |
JP2005524244A (ja) | 2005-08-11 |
ES2526694T3 (es) | 2015-01-14 |
FR2839201B1 (fr) | 2005-04-01 |
CA2483584A1 (fr) | 2003-11-13 |
FR2839201A1 (fr) | 2003-10-31 |
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