JP4732596B2 - 連想メモリ装置 - Google Patents

連想メモリ装置 Download PDF

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Publication number
JP4732596B2
JP4732596B2 JP2001011005A JP2001011005A JP4732596B2 JP 4732596 B2 JP4732596 B2 JP 4732596B2 JP 2001011005 A JP2001011005 A JP 2001011005A JP 2001011005 A JP2001011005 A JP 2001011005A JP 4732596 B2 JP4732596 B2 JP 4732596B2
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JP
Japan
Prior art keywords
line
match
search
potential
bit line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001011005A
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English (en)
Japanese (ja)
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JP2001319481A5 (enExample
JP2001319481A (ja
Inventor
秀昭 岩崎
竜一 籏
直樹 金沢
正人 米田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kawasaki Microelectronics Inc
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Kawasaki Microelectronics Inc
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Filing date
Publication date
Application filed by Kawasaki Microelectronics Inc filed Critical Kawasaki Microelectronics Inc
Priority to JP2001011005A priority Critical patent/JP4732596B2/ja
Priority to US09/795,139 priority patent/US6400594B2/en
Publication of JP2001319481A publication Critical patent/JP2001319481A/ja
Publication of JP2001319481A5 publication Critical patent/JP2001319481A5/ja
Application granted granted Critical
Publication of JP4732596B2 publication Critical patent/JP4732596B2/ja
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Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores

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  • Static Random-Access Memory (AREA)
  • Dram (AREA)
JP2001011005A 2000-03-03 2001-01-19 連想メモリ装置 Expired - Fee Related JP4732596B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001011005A JP4732596B2 (ja) 2000-03-03 2001-01-19 連想メモリ装置
US09/795,139 US6400594B2 (en) 2000-03-03 2001-03-01 Content addressable memory with potentials of search bit line and/or match line set as intermediate potential between power source potential and ground potential

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000058569 2000-03-03
JP2000-58569 2000-03-03
JP2000058569 2000-03-03
JP2001011005A JP4732596B2 (ja) 2000-03-03 2001-01-19 連想メモリ装置

Publications (3)

Publication Number Publication Date
JP2001319481A JP2001319481A (ja) 2001-11-16
JP2001319481A5 JP2001319481A5 (enExample) 2008-02-28
JP4732596B2 true JP4732596B2 (ja) 2011-07-27

Family

ID=26586715

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001011005A Expired - Fee Related JP4732596B2 (ja) 2000-03-03 2001-01-19 連想メモリ装置

Country Status (2)

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US (1) US6400594B2 (enExample)
JP (1) JP4732596B2 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2277717C (en) * 1999-07-12 2006-12-05 Mosaid Technologies Incorporated Circuit and method for multiple match detection in content addressable memories
CA2307240C (en) 2000-05-01 2011-04-12 Mosaid Technologies Incorporated Matchline sense circuit and method
JP2001357678A (ja) * 2000-06-16 2001-12-26 Hitachi Ltd 半導体集積回路装置
CA2313275C (en) * 2000-06-30 2006-10-17 Mosaid Technologies Incorporated Searchline control circuit and power reduction method
US6822886B2 (en) * 2001-09-24 2004-11-23 Micron Technology, Inc. Reducing signal swing in a match detection circuit
KR100406924B1 (ko) * 2001-10-12 2003-11-21 삼성전자주식회사 내용 주소화 메모리 셀
US6584003B1 (en) * 2001-12-28 2003-06-24 Mosaid Technologies Incorporated Low power content addressable memory architecture
JP2003242784A (ja) * 2002-02-15 2003-08-29 Kawasaki Microelectronics Kk 連想メモリ装置
US6760241B1 (en) * 2002-10-18 2004-07-06 Netlogic Microsystems, Inc. Dynamic random access memory (DRAM) based content addressable memory (CAM) cell
US7006368B2 (en) * 2002-11-07 2006-02-28 Mosaid Technologies Incorporated Mismatch-dependent power allocation technique for match-line sensing in content-addressable memories
JP2004355760A (ja) * 2003-05-30 2004-12-16 Renesas Technology Corp データ記憶回路
US7126834B1 (en) * 2003-09-12 2006-10-24 Netlogic Microsystems, Inc. Sense amplifier architecture for content addressable memory device
JPWO2005050663A1 (ja) 2003-11-21 2007-08-23 株式会社日立製作所 半導体集積回路装置
JP4901288B2 (ja) * 2006-04-25 2012-03-21 ルネサスエレクトロニクス株式会社 内容参照メモリ
US20070247885A1 (en) 2006-04-25 2007-10-25 Renesas Technology Corp. Content addressable memory
US7586771B2 (en) * 2006-09-11 2009-09-08 Jinn-Shyan Wang Tree-style and-type match circuit device applied to content addressable memory
US8358524B1 (en) 2007-06-29 2013-01-22 Netlogic Microsystems, Inc. Methods and circuits for limiting bit line leakage current in a content addressable memory (CAM) device
JP5064171B2 (ja) * 2007-10-31 2012-10-31 ルネサスエレクトロニクス株式会社 連想記憶装置
JP5477621B2 (ja) * 2009-08-03 2014-04-23 ルネサスエレクトロニクス株式会社 連想メモリ
US8130579B2 (en) * 2009-12-21 2012-03-06 Stmicroelectronics Pvt. Ltd. Memory device and method of operation thereof
US9564183B2 (en) * 2014-11-26 2017-02-07 Invecas, Inc. Sense amplifier having a timing circuit for a presearch and a main search
US9640250B1 (en) * 2016-05-16 2017-05-02 Qualcomm Incorporated Efficient compare operation
US10910056B2 (en) * 2018-02-22 2021-02-02 Renesas Electronics Corporation Semiconductor device
CN112259147B (zh) * 2020-10-21 2021-09-10 海光信息技术股份有限公司 内容可寻址存储器、阵列及处理器系统
US12399622B2 (en) * 2023-10-11 2025-08-26 Macronix International Co., Ltd. High-level architecture for 3D-NAND based in-memory search

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0135699B1 (ko) * 1994-07-11 1998-04-24 김주용 셀프-리프레쉬 가능한 듀얼포트 동적 캠셀 및 리프레쉬장치
JP3117375B2 (ja) * 1994-11-28 2000-12-11 インターナショナル・ビジネス・マシーンズ・コーポレ−ション 連想メモリの制御回路及び連想メモリ装置
US5659697A (en) * 1994-12-14 1997-08-19 International Business Machines Corporation Translation lookaside buffer for faster processing in response to availability of a first virtual address portion before a second virtual address portion
JPH08212791A (ja) * 1995-02-03 1996-08-20 Kawasaki Steel Corp 連想メモリ装置
JP3769784B2 (ja) * 1995-09-05 2006-04-26 株式会社ルネサステクノロジ 半導体メモリ装置とそれを用いたマイクロコンピュータ
JPH09198878A (ja) * 1996-01-16 1997-07-31 Mitsubishi Electric Corp 半導体記憶装置
US5752260A (en) * 1996-04-29 1998-05-12 International Business Machines Corporation High-speed, multiple-port, interleaved cache with arbitration of multiple access addresses
US5852569A (en) * 1997-05-20 1998-12-22 Quality Semiconductor, Inc. Content addressable memory multiple match detection circuit
JPH11283378A (ja) * 1997-11-26 1999-10-15 Texas Instr Inc <Ti> 内容アドレス・メモリ
CA2266062C (en) * 1999-03-31 2004-03-30 Peter Gillingham Dynamic content addressable memory cell
CA2277717C (en) * 1999-07-12 2006-12-05 Mosaid Technologies Incorporated Circuit and method for multiple match detection in content addressable memories

Also Published As

Publication number Publication date
JP2001319481A (ja) 2001-11-16
US6400594B2 (en) 2002-06-04
US20010026464A1 (en) 2001-10-04

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