JP4730093B2 - Photoresist composition, pattern forming method using the same, and method for manufacturing thin film transistor array panel - Google Patents

Abstract

A photoresist composition includes a novolac resin having where each of R1, R2, R3, and R4 is an alkyl group having a hydrogen atom or between one through six carbon atoms and n is an integer ranging from zero through three; and a mercapto compound having <?in-line-formulae description="In-line Formulae" end="lead"?>Z1-SH, or<?in-line-formulae description="In-line Formulae" end="tail"?> <?in-line-formulae description="In-line Formulae" end="lead"?>SH-Z2-SH,<?in-line-formulae description="In-line Formulae" end="tail"?> where each of Z1 and Z2 is an alkyl group or an alkyl group having one through twenty carbon atoms, a sensitizer, and a solvent.

Description

  The present invention relates to a photoresist composition, a method of forming a pattern using the same, and a method of manufacturing a thin film transistor array panel, and more particularly, a photoresist composition capable of reducing the occurrence of cracks in a photoresist film, and the use of the same. The present invention relates to a method for forming a patterned pattern and a method for manufacturing a thin film transistor array panel.

The liquid crystal display device is one of the most widely used flat panel display devices. The liquid crystal display device includes two display plates on which electrodes are formed and a liquid crystal layer inserted between the two display plates. It is a display device that adjusts the amount of light transmitted by applying voltage to rearrange liquid crystal molecules in a liquid crystal layer.
Among liquid crystal display devices, the structure mainly used at present is a structure in which an electric field generating electrode is provided on each of two display plates. Among them, a structure in which a plurality of pixel electrodes are arranged in a matrix form on one display panel, and a common electrode covers the entire surface of the other display panel is the mainstream. Such an image display in the liquid crystal display device is performed by applying a separate voltage to each pixel electrode.

  For this purpose, a thin film transistor which is a three-terminal element for switching a voltage applied to the pixel electrode is connected to each pixel electrode, a gate line for transmitting a signal for controlling the thin film transistor, and a voltage applied to the pixel electrode. Is formed on a display panel (hereinafter referred to as a “thin film transistor display panel”). The thin film transistor serves as a switching element that transmits or blocks an image signal transmitted through the data line to the pixel electrode by a scanning signal transmitted through the gate line. Such a thin film transistor serves as a switching element that individually controls each light emitting element even in an active organic light emitting display element (AM-OLED) that is a self light emitting element.

  Such a liquid crystal display device or a display device such as an organic light emitting display element includes a plurality of patterns. Such a pattern is generally formed by laminating a conductive or non-conductive layer by a method such as sputtering, and then applying a photoresist film thereon, exposing, developing, and a photolithography (photo-etching) process including the above-described layer etching processes. Patterned by

In such a series of photolithography processes, the photoresist film formed on each pattern is exposed to the etching solution. However, since most of the etching solution contains a strong acid component, cracks are easily induced on the photoresist surface.
When cracks occur on the surface of the photoresist film, there is a problem that unnecessary etching occurs in the lower layer and the pattern becomes defective.

  Accordingly, the present invention has been made in view of the above problems in the conventional photolithography process, and an object of the present invention is to provide a photoresist composition that can reduce the occurrence of cracks in the photoresist film during the photolithography process. And a method for forming a pattern using a photoresist composition, and a method for manufacturing a thin film transistor array panel using the photoresist composition.

The photoresist composition according to the present invention made to achieve the above object comprises a novolak resin represented by the following chemical formula (1), a mercapto compound represented by the following chemical formula (2), and a photosensitizer. And a solvent. A photoresist composition comprising:
(In the chemical formula (1), R1 to R4 are each independently a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, n is an integer of 0 to 3, and in the chemical formula (2), R1 and R2 are each independently an alkyl group or an aryl group having 1 to 20 carbon atoms.)

In addition, a method of forming a pattern according to the present invention to achieve the above object includes a step of forming a conductive or nonconductive layer on a substrate, and a conductive or nonconductive layer formed on the substrate. Forming a photoresist composition having a novolak resin represented by the following chemical formula (1), a mercapto compound represented by the following chemical formula (2), a photosensitizer, and a remaining solvent on the layer of And exposing and developing the photoresist composition to form a photoresist pattern; and etching the conductive or non-conductive layer formed on the substrate using the photoresist pattern. A method of forming a pattern, comprising:
(In the chemical formula (1), R1 to R4 are each independently a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, n is an integer of 0 to 3, and in the chemical formula (2), R1 and R2 are each independently an alkyl group or an aryl group having 1 to 20 carbon atoms.)

In addition, a method of manufacturing a thin film transistor array panel according to the present invention made to achieve the above object includes a step of forming a gate line including a gate electrode on a substrate, a step of forming a gate insulating film on the gate line, Forming a semiconductor layer on the gate insulating layer; forming a data line including a source electrode on the semiconductor layer; and a drain electrode facing the source electrode at a predetermined interval; and being connected to the drain electrode. Forming at least one pixel electrode, wherein at least one of the steps includes a photolithography step, and the photolithography step is formed with forming a conductive or non-conductive layer. A novolak resin represented by the following chemical formula (1) and a mercapto compound represented by the following chemical formula (2) on the conductive or non-conductive layer. Applying a photoresist composition having a photosensitive agent and a solvent, exposing and developing the photoresist composition to form a photoresist pattern, and utilizing the photoresist pattern And a step of etching the formed conductive or non-conductive layer.
(In the chemical formula (1), R1 to R4 are each independently a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, n is an integer of 0 to 3, and in the chemical formula (2), R1 and R2 are each independently an alkyl group or an aryl group having 1 to 20 carbon atoms.)

  According to the photoresist composition, the method of forming a pattern using the same, and the method of manufacturing a thin film transistor panel according to the present invention, a photoresist composition containing a novolac resin, a mercapto compound, a photosensitive agent, and a solvent is provided. By utilizing this, it is possible to effectively improve cracks in the photoresist film generated in the conductive layer etching step, and at the same time, it is possible to prevent wiring defects caused by unnecessary etching of the lower layer that may be caused by such cracks.

  Next, specific examples of the best mode for carrying out the photoresist composition according to the present invention, a pattern forming method using the same, and a method for manufacturing a thin film transistor array panel will be described with reference to the drawings.

First, the photoresist composition according to the present invention will be described in detail.
The photoresist composition according to the present invention includes a novolak resin represented by the following chemical formula (1), a mercapto compound represented by the following chemical formula (2), a photosensitizer and a solvent.
(In the chemical formula (1), R _{1 to} R ₄ are each independently a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, n is an integer of 0 to 3, and the chemical formula (2) R ₁ and R ₂ are each independently an alkyl group or an allyl group having 1 to 20 carbon atoms.)

The novolak resin which is one of the photoresist composition components can be obtained by reacting a phenol monomer and an aldehyde compound in the presence of an acid catalyst.
Examples of the phenol monomer include phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, and m-cresol. Ethyl phenol (m-ethyl phenol), p-ethyl phenol (p-ethyl phenol), o-butyl phenol (o-butyl phenol), m-butyl phenol (m-butyl phenol), p-butyl phenol (p-butyl phenol), 2,3-xylene (2,3-xylene), 2,4-xylene (2,4-xylene), 2,5-xylene (2,5-xylene), 2,6-xylene (2,6-xylene) ), 3,4-xylene ( , 4-xylen), 3,5-xylene (3,5-xylene), 3,6-xylene (3,6-xylene), 2,3,5-trimethylphenol (2,3,5-trimethylphenol) 3,4,5-trimethylphenol (3,4,5-trimethylphenol), p-phenylphenol, resorcinol, hydroquinone, hydroquinone monomethyl ether, hydroquinone monomethyl ether, hydroquinone monomethyl ether, hydroquinone monomethyl ether, hydroquinone monomethyl ether Pyrogallol, chloroglucinol, hydroxy diphenyl, bisphenol-A ( It is possible to use a mixture of one or more compounds selected from isphenol-A), gallic acid, α-naphthol and β-naphthol. it can.

  The aldehyde compound is a mixture of one or more selected from formaldehyde, p-formaldehyde, benzaldehyde, nitrobenzaldehyde, acetaldehyde and the like. Can be used.

Examples of the acid catalyst added during the reaction of the phenol compound and the aldehyde compound include hydrochloric acid, nitric acid, sulfuric acid, formic acid, and oxalic acid. One or more selected from the above can be used in combination.
The novolak resin is preferably contained in an amount of 5 to 50% by weight based on the total content of the photoresist composition.

  Examples of the mercapto compound that is one of the photoresist composition components include 2-mercaptotoluene, 3-mercaptotoluene, and 4-mercaptotoluene. , 3-mercaptopropionic acid ethyl ester (ethyl ester 3-mercapto propionate), 3-mercaptopropionic acid methyl ester (methyl ester 3-mercapto propionate), 3-mercaptopropyl dimethoxymethyl silane (3-mercapto propyl dimethyl silane) 3-mercaptopropyltrimethoxysilane (3-me captopropyl trimethyl silane), 2-mercaptoethyl sulfide (2-mercapto ethyl sulfide), 2-mercapto pyrimidine (2-mercapto pyrimidine), 2-mercapto-4-pyromidone (2-mercapri-piperidone) -Xylene (2-mercapto-4-pyrimidone), 4-mercapto-meta-xylene (4-mercapto-meta-xylene), 1-dodecyl mercaptan (1-dodecyl mercaptane) and the like were selected and selected from these compounds One kind or a mixture of two or more kinds of compounds can be used.

In the present invention, by adding a mercapto compound to the photoresist composition, it is possible to prevent the surface of the photoresist film from being cracked by the etching solution during the etching process.
In general, in order to pattern a conductive or non-conductive layer, an etching solution is dipped or sprayed on a photoresist pattern after development and a layer exposed without forming the photoresist pattern. In this case, a pattern having a good profile can be formed if the exposed layer is etched by the etching solution and the lower layer covered by the photoresist pattern is not etched by the etching solution.

However, the etching solution almost contains a strong acid such as hydrochloric acid or nitric acid. In particular, recently, there is a tendency to increase the content of strong acid that can adjust the etching rate in order to improve the wiring profile. When the etching solution containing such a strong acid comes into contact with the photoresist pattern, a crack is generated on the surface of the photoresist pattern by a chemical attack mechanism between the strong acid and the functional group of the compound constituting the photoresist composition. In this case, the etching solution may come into contact with the lower layer covered with the photoresist pattern through the crack, resulting in a defective pattern.
Therefore, in order to form a good pattern, it is important to prevent the occurrence of cracks on the surface of the photoresist pattern.

The photoresist composition according to the present invention comprises a mercapto compound that can minimize such chemical attack mechanisms. That is, the mercapto compound serves as an anticorrosive additive that prevents cracks in the photoresist film.
The mercapto compound is preferably contained in an amount of 0.5 to 15% by weight based on the total content of the photoresist composition. When the mercapto compound is less than 0.5% by weight, the etching resistance cannot be exhibited. On the other hand, when it exceeds 15% by weight, it is difficult to control the photosensitive speed of the photoresist and the exposed part is not exposed. The boundary of the part may become unclear and a defective pattern may be formed.

Photosensitive agents, which are other components of the photoresist composition, are generally compounds that react with light during the exposure process to cause a photochemical reaction, and those that are usually used can be used, and are particularly limited. Not. Preferably, it can be selected from the compounds represented by the following chemical formulas (3) to (10).
In the chemical formulas (3) to (10), R and R ′ are each independently a hydrogen atom, 2,1-diazonaphthoquinone-4-sulfonic acid ester, or 2, 1-diazonaphthoquinone-5-sulfonic acid ester (2,1-diazonaphthoquinone-5-sulfonic ester), R _{1 to} R ₅ are each independently a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, An alkoxy group having 1 to 6 carbon atoms or a cycloalkyl group having 4 to 10 carbon atoms, and R ₆ , R ₈ , R ₁₀ and R ₁₂ are each independently a hydrogen atom or 1 to 6 an alkyl group having a carbon _{atom, R 7, R 9, R} 11 and _{R 13} DE mutually A hydrogen atom, an alkyl group having 1 to 6 carbon atoms, a cycloalkyl group having an alkoxy group or a 4 to 10 carbon atoms having from 1 to 6 carbon atoms.

  The photosensitive agent is preferably contained in an amount of 3 to 20% by weight based on the total content of the photoresist. This is because when the light-sensitive agent is contained in an amount of less than 3% by weight, the speed of sensitivity decreases during exposure, and when it exceeds 20% by weight, the speed of sensitivity increases rapidly. Therefore, it is preferably contained in an amount of 3 to 20% by weight in order to maintain an appropriate sensitivity speed.

  In addition, the photoresist composition according to the present invention may further include a silicon compound containing an epoxy group or an amine group as an additive. Examples of the silicon compound include (3-glycideoxypropyl) trimethoxysilane ((3-glycideoxypropyl) trimethylsilane) and (3-glycidoxypropyl) triethoxysilane ((3-glycideoxypropyl) triethoxysilane). (3-glycideoxypropyl) methyldimethoxysilane ((3-glycideoxypropyl) methyldiethoxysilane ((3-glycideoxypropyl) methyldiethoxysilane, (3-glycideoxypropyl) methyldiethylsilane ((3-glycideoxypropyl) methyldiethylsilane)) -Glycidoxypropyl) dimethylmethoxysilane ((3-glycide oxypropyl) d methyl methylsilane, (3-glycidoxypropyl) dimethylethoxysilane, 3,4-epoxybutyltrimethoxysilane (3,4-epoxybutyltrimethyl, 3,4-epoxybutyltrimethyl, 3,4-epoxybutyltrimethoxysilane) 4-epoxybutyltriethoxysilane, 3- (3,4-epoxycyclohexyl) ethyltrimethoxysilane (2- (3,4-epoxycyclohexyl) ethyl trimethylsilane), 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyl trimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltriethoxysilane (2- (3,4-epoxy cyclo) exyl) ethyl triethoxy silane) and aminopropyltrimethoxysilane (aminopropyl trimethoxy silane) is included. The additive plays a role of improving the curability and heat resistance of the photoresist.

  The photoresist composition can further include other additives such as plasticizers, stabilizers, or surfactants as required.

  A novolak resin, a mercapto compound, a photosensitizer, and various additives are used in a form dissolved in an organic solvent. Examples of the organic solvent include ethyl acetate, butylacetate, diethylene glycol dimethyl ether, diethylene glycol dimethyl ethyl ether, diethylene glycol dimethyl ethyl ether, and diethylene glycol dimethyl ethyl ether. ), Ethyl ethoxypropionic acid, ethyl lactate, propylene glycol methyl ether acetate, Propylene glycol methyl ether, propylene glycol propyl ether, methyl celloyl acetate, methyl celloyl acetate, ethyl celloyl acetate, ethyl celloyl acetate Diethylene glycol ethyl acetate, acetone, methyl isobutyl ketone, cyclohexane Sanhexone, dimethylformamide (DMF), N, N-dimethylacetamide (N, N-dimethylacetamide, DMAc), N-methyl-2-pyrrolidone, γ- Butyrolactone (γ-butyrolactone), diethyl ether, ethylene glycol dimethyl ether, diglyme, tetrahydrofuran (tetrahydrofuran), methanol (ethanol), ethanol (propanol), ethanol (propanol), ethanol (propanol), ethanol (I propyleneol, methyl cellosolve, ethyl cellosolve, diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol ethyl ether, diethylene glycol ethyl ether, diethylene glycol ethyl ether, diethylene glycol ethyl ether, diethylene glycol ethyl ether, diethylene glycol ethyl ether, diethylene glycol ethyl ether, diethylene glycol ethyl ether, diethylene glycol ethyl ether. (Toluene), xylene (xylene), hexane (hexane), heptane (heptane), octane (octane) and the like can be selected.

  In the first embodiment of the present invention, when the photoresist composition according to the present invention was applied, the presence or absence of cracks on the surface of the photoresist film and the goodness of the pattern were evaluated.

(Manufacture of photoresist composition)
First, a cresol mixture (Mw = 8,000) containing m-cresol and p-cresol in a weight ratio of 40:60 and a formaldehyde compound as an acid catalyst in the presence of oxalic acid are subjected to polycondensation. A novolac resin represented by the following formula was obtained.
Thereafter, 30% by weight of the novolak resin obtained above, 10% by weight of the photosensitizer represented by the above chemical formulas 9 and 10, and 1-dodecyl mercaptan whose content was changed to 0 to 17% by weight according to each of the operating conditions ( A 1-dodecyl mercaptan) compound (mercapto compound) was dissolved in dimethylformamide (DMF).
The composition ratio of the composition produced above is as shown in Table 1 below.

(Photo etching process)
A metal pattern was formed using each of the photoresist compositions manufactured above. All other conditions during the process were set to be the same for each photoresist composition.
First, molybdenum (Mo), aluminum (Al), and molybdenum (Mo) were sequentially stacked on a substrate made of glass or the like. Thereafter, the photoresist composition prepared above was applied onto the metal layer by a spin coating method. Next, the photoresist film was pre-baked at a temperature of about 100 to 110 ° C. for 90 seconds.

Next, after exposing the photoresist film using an exposure apparatus, the photoresist film was developed by a paddle method to remove the exposed photoresist film.
Next, an integrated etching solution containing phosphoric acid, nitric acid, acetic acid and the like in a predetermined ratio was prepared, and the etching solution was filled in each etching chamber. Thereafter, each of the substrates on which the development process was completed was immersed in an etchant to etch the metal layer.

When cracks occurred on the surface of the photoresist film during the etching of each substrate, the substrate was immediately taken out.
The presence or absence of crack generation and the time for crack generation were measured for each substrate.
Thereafter, when the etching of the metal layer was completed on the substrate on which no crack was generated, the metal layer pattern was observed after removing the photoresist pattern.

The above results are as shown in Table 1 below.

As shown in Table 1, when a mercapto compound is contained as an anticorrosion additive, it can be seen that the occurrence of cracks is significantly reduced.
More specifically, when a mercapto compound is added in an amount of 0 to 0.4% by weight to a composition using the same novolak resin and a light-sensitive agent (Comparative Examples 5 to 9), after immersion in the etching solution, 60 It can be seen that many cracks occurred on the surface of the photoresist film within a second. However, when the mercapto compound was contained in an amount of 0.5% by weight or more, it was found that the corrosion resistance was gradually improved and no crack was generated even when immersed in an etching solution for 60 seconds, 120 seconds or 180 seconds.

On the other hand, when the mercapto compound exceeds 15% by weight, cracks did not occur on the surface of the photoresist film, but it was confirmed that excessive addition of the mercapto compound originally affected the heat resistance characteristics and residual film ratio characteristics of the photoresist. It was. FIG. 31 is a cross-sectional photograph (SEM) in which the temperature at which the photoresist is reflowed during hard baking can be confirmed, (A) is a cross-sectional photograph showing “●” in Table 1 above, and (B) is 2 is a cross-sectional photograph showing “▲” in Table 1. FIG. FIG. 32 is a graph showing the photoresist remaining film ratio (%) depending on the amount of mercapto compound added. When 15% or more is added, the remaining film ratio decreases to 50% or less, resulting in poor pattern characteristics. I found out that
Therefore, it is preferable that the mercapto compound is contained in an amount of about 0.5 to 15% by weight with respect to the total content of the photoresist composition in order to maintain the characteristics of the photoresist without causing cracks on the surface of the photoresist film.

Next, a method for manufacturing a thin film transistor array panel using the photoresist composition according to the second embodiment of the present invention will be described.
Although this embodiment will be described with reference to the drawings, the thickness is shown enlarged in order to clearly represent various layers and regions in the drawings. Similar parts throughout the specification are marked with the same reference numerals. When a layer, film, region, plate, etc. is “on” other parts, this is not only “directly above” other parts, but also other parts in the middle Including. On the other hand, when a part is “directly above” another part, it means that there is no other part in the middle.

FIG. 1 is a layout view illustrating a structure of a thin film transistor array panel according to a second embodiment of the present invention. FIG. 2 is a cross-sectional view taken along the line II-II ′ of FIG. is there.
As shown in FIGS. 1 and 2, a plurality of gate lines 121 for transmitting gate signals are formed on the insulating substrate 110. The gate lines 121 extend in the horizontal direction, a part of each gate line 121 constitutes a plurality of gate electrodes 124, and another part of the gate line 121 protrudes downward to constitute a plurality of extended portions 127. . In addition, an end portion 129 of a gate line for connecting to an external circuit is provided.

The gate lines 121 are formed on the first metal layers 124p, 127p, and 129p made of aluminum or aluminum alloy (AlNd) obtained by adding a predetermined amount of neodymium to aluminum, and formed on the first metal layers 124p, 127p, and 129p. It consists of the second metal layers 124q, 127q, and 129q made of (Mo).
The side surfaces of the first metal layers 124p, 127p, and 129p and the second metal layers 124q, 127q, and 129q are inclined, and the inclination angle is about 30 to 80 degrees with respect to the surface of the substrate 110.
A gate insulating film 140 made of silicon nitride or the like is formed on the gate line 121.

A plurality of linear semiconductor layers 151 made of hydrogenated amorphous silicon or the like are formed on the gate insulating film 140. The linear semiconductor layer 151 extends in the vertical direction, and a plurality of protrusions 154 extend from the linear semiconductor layer 151 toward the gate electrode 124. Further, the linear semiconductor layer 151 is wide in the vicinity of the point where it meets the gate line 121 and covers a large area of the gate line 121.
A linear resistive contact layer 161 and a plurality of island-type resistive contact layers 163 made of a material such as n ⁺ hydrogenated amorphous silicon doped with a high concentration of silicide or n-type impurities are formed on the semiconductor layer 151. , 165 are formed. The island-type resistive contact layers 163 and 165 are located on the protruding portion 154 of the semiconductor layer 151 in a pair. The side surfaces of the semiconductor layer 151 and the resistive contact layers 163 and 165 are also inclined, and the inclination angle is 30 to 80 ° with respect to the substrate 110.

A plurality of data lines 171 including a source electrode 173, a plurality of drain electrodes 175, and a plurality of storage capacitor conductors 177 are formed on the resistive contact layers 161, 163, 165 and the gate insulating film 140, respectively. In addition, a data line end 179 for connection to an external circuit is provided.
The data line 171 extends in the vertical direction and crosses the gate line 121 to transmit a data voltage. A plurality of branches extending from each data line 171 toward the drain electrode 175 constitute a source electrode 173. The pair of source electrode 173 and drain electrode 175 are separated from each other and are located on opposite sides of the gate electrode 124.

The data line 171 including the source electrode 173 and the drain electrode 175 are formed below and above the first metal layers 171q, 173q, 175q, 177q, 179q and the first metal layers 171q, 173q, 175q, 177q, 179q containing aluminum. The second metal layer 171p, 173p, 175p, 177p, 179p containing molybdenum and the third metal layer 171r, 173r, 175r, 177r, 179r are formed.
By having such a structure in which an aluminum or aluminum alloy layer having a low specific resistance is interposed between the molybdenum layers, the aluminum layer interposed between the lower semiconductor layer and the intermediate layer while maintaining the low specific resistance characteristic as it is. By not making direct contact with the upper pixel electrode, there is an advantage that deterioration of characteristics of the thin film transistor due to poor contact can be prevented.

The gate electrode 124, the source electrode 173, and the drain electrode 175 constitute a thin film transistor (TFT) together with the protruding portion 154 of the semiconductor 151, and a channel of the thin film transistor is formed in the protruding portion 154 between the source electrode 173 and the drain electrode 175. The storage capacitor conductor 177 overlaps the extended portion 127 of the gate line 121.
The side surfaces of the data line 171, the drain electrode 175, and the storage capacitor conductor 177 are inclined at an angle of about 30 to 80 ° with respect to the substrate 110, similarly to the gate line 121.

  The resistive contact layers 163 and 165 exist only between the lower semiconductor layer 154 and the upper source electrode 173 and drain electrode 175 and serve to lower the contact resistance. The linear semiconductor layer 151 includes a portion exposed between the source electrode 173 and the drain electrode 175 and not covered with the data line 171 and the drain electrode 175, and the linear semiconductor layer in most regions. Although the width of 151 is narrower than the width of the data line 171, as described above, the width is increased at the portion where the gate line 121 is met, and the insulation between the gate line 121 and the data line 171 is strengthened.

  The data line 171, the drain electrode 175, the storage capacitor conductor 177, and the exposed semiconductor layer 151 are formed by an organic material having excellent planarization characteristics and photosensitivity, plasma enhanced chemical vapor deposition (PECVD). A protective film 180 made of a low dielectric constant insulating material such as a-Si: C: O, a-Si: O: F, or silicon nitride that is an inorganic material is formed in a single layer or a plurality of layers. For example, in the case of forming with an organic material, in order to prevent the organic material of the protective film 180 from contacting a portion where the semiconductor layer 154 between the source electrode 173 and the drain electrode 175 is exposed, Further, an insulating film (not shown) made of silicon nitride or silicon oxide can be additionally formed.

The protective film 180 is formed with a plurality of contact holes 181, 185, 187, and 182 exposing the gate line end 129, the drain electrode 175, the storage capacitor conductor 177, and the data line end 179.
A plurality of pixel electrodes 190 and a plurality of contact assisting members 81 and 82 made of ITO or IZO are formed on the protective film 180.
The pixel electrode 190 is physically and electrically connected to the drain electrode 175 and the storage capacitor conductor 177 through the contact holes 185 and 187, respectively, and receives a data voltage from the drain electrode 175, and is connected to the storage capacitor conductor 177. Transmit data voltage.

The pixel electrode 190 to which the data voltage is applied rearranges the liquid crystal molecules in the liquid crystal layer by generating an electric field together with a common electrode (not shown) of another display panel (not shown) that receives the application of the common voltage.
The contact assistants 81 and 82 are connected to the end portions 179 of the data lines through the contact holes 181 and 182, respectively. The contact assistants 81 and 82 supplement and protect the adhesion between the end portion 129 of the gate line and the end portion 179 of the data line 171 and an external device such as a driving integrated circuit.

Next, a method of manufacturing the thin film transistor array panel shown in FIGS. 1 and 2 according to the second embodiment of the present invention will be described in detail with reference to FIGS. 3 to 16 and FIGS.
First, as shown in FIG. 3, a first metal layer 120p containing aluminum and a second metal layer 120q containing molybdenum are sequentially stacked on an insulating substrate 110.

Here, the first metal layer 120p and the second metal layer 120q are formed by joint sputtering.
In this embodiment, aluminum alloy (Al—Nd) and molybdenum (Mo) in which about 2 at% of neodymium is added to aluminum are used as a target for joint sputtering.
Co-sputtering is performed by the following method.
First, power is not applied to the molybdenum target in the initial stage, but power is applied only to the aluminum alloy target to form the first metal layer 120p made of an aluminum alloy on the substrate. In this case, it is preferable to have a thickness of about 2,500 mm. Thereafter, the power applied to the aluminum alloy target is turned off, and then the power is applied to the molybdenum target to form the second metal layer 120q.

Next, a novolac resin represented by the following chemical formula (1) on the second metal layer 120q,
Here, R _{1 to} R ₄ in the chemical formula (1) are each independently a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, and n is an integer of 0 to 3.
A mercapto compound represented by the following chemical formula (2):
(Wherein R ₁ and R ₂ are each independently an alkyl group or an allyl group having 1 to 20 carbon atoms)
A photoresist composition containing a photosensitive agent and a solvent is applied by a spin coating method.

  The photoresist composition preferably comprises 5-50% by weight novolak resin, 3-20% by weight photosensitizer, 0.5-15% by weight mercapto compound and the remaining amount of solvent, m in this example. A cresol mixture (Mw = 8,000) containing cresol and p-cresol in a weight ratio of 40/60 and 30% by weight of a novolak resin obtained by condensation polymerization in the presence of oxalic acid using a formaldehyde compound as an acid catalyst, 5% by weight of the photosensitizer represented by the chemical formula (9), 5% by weight of the photosensitizer represented by the above chemical formula (10), and 5% by weight of the 1-dodecyl mercaptan compound as the mercapto compound were added to dimethylformamide (DMF). The positive photoresist composition produced by dissolving in No. 8) was used (the composition of No. 8 in Example 1).

Thereafter, as shown in FIG. 4, the photoresist film 40 is exposed using a mask 50 and then developed.
Next, as shown in FIG. 6, the first metal layer 120p and the second metal layer 120q in the region excluding the portion where the photoresist pattern 42 is left are etched at once using an etching solution. At this time, an etching solution containing phosphoric acid, nitric acid, acetic acid, and demineralized water in an appropriate ratio is suitable as the etching solution.
Thereafter, the photoresist pattern 42 is removed using a photoresist remover, thereby forming the gate line 121 including the gate electrode 124, the extended portion 127, and the end portion 129 of the gate line as shown in FIG.

Next, as shown in FIGS. 8 and 9, silicon nitride or silicon oxide is deposited so as to cover the gate line 121 to form a gate insulating film 140. The lamination temperature of the gate insulating film 140 is preferably about 250 to 500 ° C. and the thickness is about 2,000 to 5,000 mm.
Then, a three-layer film of an intrinsic amorphous silicon layer and an amorphous silicon layer doped with an impurity is successively stacked on the gate insulating film 140, and the amorphous silicon layer doped with the impurity and the intrinsic amorphous layer are stacked. The porous silicon layer is photoetched to form a linear intrinsic semiconductor layer 151 including a plurality of protrusions 154 and a plurality of impurity semiconductor patterns 164 and an amorphous silicon layer 161 doped with impurities.

  After that, as shown in FIG. 10, a first metal layer 170p containing molybdenum, a second metal layer 170q containing aluminum, and a third metal containing molybdenum are formed on the amorphous silicon layer 161 doped with impurities by a method such as sputtering. Metal layers 170r are sequentially deposited. The first metal layer 170p, the second metal layer 170q, and the third metal layer 170r are all formed to a thickness of about 3000 mm, and the sputtering temperature is preferably about 150 ° C.

Next, as shown in FIG. 11, a novolac resin represented by the following chemical formula (1) by a method such as spin coating on the third metal layer 170r,
(Where R _{1 to} R ₄ are each independently a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, n is an integer of 0 to 3),
A mercapto compound represented by the following chemical formula (2):
(Wherein R ₁ and R ₂ are each independently an alkyl group or an allyl group having 1 to 20 carbon atoms),
A photoresist film 44 is formed by applying a photoresist composition containing a photosensitizer and a solvent.

  The photoresist composition preferably comprises 5-50% by weight novolak resin, 3-20% by weight photosensitizer, 0.5-15% by weight mercapto compound, and the remaining amount of solvent. 30% by weight of a novolak resin obtained by polycondensation in the presence of oxalic acid using a cresol mixture (Mw = 8,000) containing m-cresol and p-cresol in a weight ratio of 40:60 and a formaldehyde compound as an acid catalyst, Dimethylformamide (DMF) containing 5% by weight of the photosensitizer represented by the above chemical formula (9), 5% by weight of the photosensitizer represented by the above chemical formula (10), and 5% by weight of the 1-dodecyl mercaptan compound as the mercapto compound. The positive photoresist composition (No. 8 composition in Example 1) prepared by dissolving in the solution was used.

Thereafter, as shown in FIG. 11, the photoresist film 44 is exposed using a mask 51 and then developed.
Next, as shown in FIG. 13, the metal layer 170 in the region excluding the portion where the photoresist pattern 46 remains is etched. At this time, an etching solution containing phosphoric acid, nitric acid, acetic acid, and demineralized water in an appropriate ratio is suitable.
Next, by removing the photoresist pattern 46 using a photoresist stripper, the source electrode 173, the drain electrode 175, the storage capacitor conductor 177, and the end portion 179 of the data line are formed as shown in FIG. Form.

  Also, a plurality of linear resistive elements each including a plurality of protrusions 154 are removed by removing portions of the impurity semiconductor layers 161 and 164 exposed without being covered with the source electrode 173, the drain electrode 175, and the storage capacitor conductor 177. While the contact layer 161 and the plurality of island-type resistive contact layers 163 and 165 are completed, a part of the protruding portion 154 that is an intrinsic semiconductor layer under the contact layer 161 is exposed. In this case, it is preferable to perform oxygen plasma in order to stabilize the surface of a part of the protruding portion 154 that is the exposed intrinsic semiconductor layer.

Next, as shown in FIGS. 15 and 16, an organic material having excellent planarization characteristics and photosensitivity, a-Si: C: O, a-Si formed by plasma enhanced chemical vapor deposition (PECVD). The protective film 180 is formed by forming a low dielectric constant insulating material such as: O: F or silicon nitride that is an inorganic material in a single layer or a plurality of layers.
Then, after coating the photosensitive film on the protective film 180, the photosensitive film is irradiated with light through an optical mask, and then developed to form a plurality of contact holes 181, 185, 187, 182. At this time, when the protective film 180 is an organic film having photosensitivity, the contact hole can be formed only by a photographic process (coating, photosensitizing, developing). It is preferable to perform the etching under the etching conditions having substantially the same etching ratio with respect to the gate insulating film 140 and the protective film 180.

  Next, finally, as shown in FIGS. 1 and 2, ITO or IZO is laminated on the substrate by sputtering, and a plurality of pixel electrodes 190 and a plurality of contact assisting members 81 and 82 are formed by a photoetching process. .

In this example, only one type of photoresist composition manufactured with a specific composition (the composition of No. 8 in Example 1) was applied, but the composition ratio is not particularly limited.
Also, in this example, the example in which the photoresist composition according to this example is applied only at the time of forming the gate line and the data line is shown, but the photoresist composition according to the present invention is limited to the gate line and the data line. Of course, the same applies when patterning all conductive or non-conductive layers.
In addition, although only the case where the gate line 121 and the data line 171 are formed in a double layer is shown, the present invention can also be applied to the case where the gate line 121 and the data line 171 are a single layer or multiple layers of triple layers or more. Although only the metal layer made of molybdenum and aluminum is applied to the gate line 121 and the data line 171, the present invention is not limited to this and can be applied to all the conductors.

In the second embodiment, the method of forming the semiconductor layer and the data line by a photoetching process using different masks has been described. However, in this embodiment, the semiconductor layer and the data line are formed in order to minimize the manufacturing cost. A method for manufacturing a thin film transistor array panel formed by a photoetching process using one photosensitive film pattern will be described.
This will be described in detail below with reference to the drawings.

17 is a layout view of a thin film transistor array panel according to a third embodiment of the present invention, and FIG. 18 is a cross-sectional view taken along line XIV-XIV ′ of FIG.
As shown in FIGS. 17 and 18, the layered structure of the thin film transistor array panel according to the third embodiment of the present invention is almost the same as the layered structure of the thin film transistor array panel for the liquid crystal display shown in FIGS. That is, a plurality of gate lines 121 and gate electrodes 124 including first metal layers 121p and 124p containing aluminum and second metal layers 121q and 124q made of molybdenum are formed on the substrate 110, and a gate insulating film is formed thereon. 140, a plurality of linear semiconductor layers 151 including a plurality of protrusions 154, a plurality of linear resistive contact layers 161 each including a plurality of protrusions 163, and a plurality of island-type resistive contact layers 165 are sequentially formed. The On the resistive contact layers 161 and 165 and the gate insulating film 140, a first metal layer 171q and 175q containing aluminum and a second metal containing molybdenum (Mo) formed below and above the first metal layers 171q and 175q. A plurality of data lines 171 and drain electrodes 175 including layers 171p and 175p and third metal layers 171r and 175r are formed, and a protective film 180 is formed thereon. A plurality of contact holes 185 and 182 are formed in the protective film 180 and / or the gate insulating film 140, and a plurality of pixel electrodes 190 and a plurality of contact assisting members 82 are formed on the protective film 180.

However, unlike the thin film transistor array panel shown in FIGS. 1 and 2, the thin film transistor array panel according to the present embodiment is electrically separated from the gate line 121 in the same layer as the gate line 121 instead of extending the gate line 121. A plurality of storage electrode lines 131 are placed and overlapped with the drain electrode 175 to form a storage capacitor. The storage electrode line 131 receives an application of a predetermined voltage such as a common voltage from the outside, and the storage electrode line 131 may be omitted when the storage capacitance generated by the overlap of the pixel electrode 190 and the gate line 121 is sufficient. In order to maximize the aperture ratio of the pixel, it can be arranged at the periphery of the pixel region.
The semiconductor layer 151 has substantially the same planar shape as the data line 171, the drain electrode 175, and the underlying resistive contact layers 163 and 165 except for the protrusion 154 where the thin film transistor is located. Specifically, the linear semiconductor layer 151 is formed between the source electrode 173 and the drain electrode 175 in addition to the data line 171 and the drain electrode 175 and a portion existing below the resistive contact layers 163 and 165. It has a portion exposed without being covered.

Hereinafter, a method of manufacturing the thin film transistor array panel according to the present embodiment will be described in detail with reference to FIGS. 19 to 30 and FIGS. 17 and 18.
First, as shown in FIG. 19, a first metal layer 120p made of aluminum or an aluminum alloy and a second metal layer 120q made of molybdenum or a molybdenum alloy are formed on a substrate 110 made of transparent glass or the like by a sputtering method.

Thereafter, as shown in FIG. 20, a novolac resin represented by the following chemical formula (1) on the second metal layer 120q,
(Where R _{1 to} R ₄ are each independently a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, n is an integer of 0 to 3),
A mercapto compound represented by the following chemical formula (2):
(Wherein R ₁ and R ₂ are each independently an alkyl group or an allyl group having 1 to 20 carbon atoms),
A photoresist composition containing a photosensitizer and a solvent is applied to form a photoresist film 60 by a spin coating method.

  The photoresist composition comprises 5-50 wt% novolak resin, 3-20 wt% photosensitizer, 0.5-15 wt% mercapto compound, and the remaining amount of solvent, in this example m-cresol. And a cresol mixture (Mw = 8,000) containing p-cresol at a weight ratio of 40:60 and a novolak resin obtained by condensation polymerization in the presence of oxalic acid using a formaldehyde compound as an acid catalyst, 5% by weight of the photosensitive agent shown in (9), 5% by weight of the photosensitive agent shown in the above chemical formula (10), and 5% by weight of 1-dodecyl mercaptan compound as a mercapto compound were dissolved in dimethylformamide (DMF). The positive photoresist composition (No. 8 composition in Example 1) was used.

Thereafter, as shown in FIG. 20, the photoresist film 60 is exposed using a mask 52 and then developed.
Next, as shown in FIG. 22, the first metal layer 120p and the second metal layer 120q in the region excluding the portion where the photoresist pattern 62 remains are etched at once using an etchant. At this time, an etching solution containing phosphoric acid, nitric acid, acetic acid, and demineralized water in an appropriate ratio is suitable as the etching solution.
Thereafter, the photoresist pattern 62 is removed using a photoresist stripping agent, whereby a gate line 121 including the gate electrode 124 and a plurality of storage electrode lines electrically separated from the gate line 121 as shown in FIG. 131 is formed.

Next, as shown in FIG. 24, an insulating material such as silicon nitride is deposited to cover the gate line 121 including the gate electrode 124 and the storage electrode line 131, thereby forming the gate insulating film 140.
Next, amorphous silicon not doped with impurities and amorphous silicon doped with impurities (n ⁺ a-Si) are deposited on the gate insulating film 140 to form the intrinsic amorphous silicon layer 150 and the impurities. A doped amorphous silicon layer 160 is sequentially stacked. The intrinsic amorphous silicon layer 150 is formed of hydrogenated amorphous silicon or the like, and the amorphous silicon layer 160 doped with impurities is amorphous silicon or silicide doped with n-type impurities such as phosphorus at a high concentration. Form with.
Further, a first metal layer 170p containing molybdenum, a second metal layer 170q containing aluminum, and a third metal layer 170r containing molybdenum are sequentially stacked on the amorphous silicon layer 160 doped with impurities by a method such as sputtering. To do.

Next, a novolac resin represented by the following chemical formula (1) on the third metal layer 170r,
(Where R _{1 to} R ₄ are each independently a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, n is an integer of 0 to 3),
A mercapto compound represented by the following chemical formula (2):
(Wherein R ₁ and R ₂ are each independently an alkyl group or an allyl group having 1 to 20 carbon atoms)
A photoresist composition containing a photosensitizer and a solvent is applied to form a photoresist film.

  The photoresist composition contains 5-50% by weight novolak resin, 3-20% by weight photosensitizer, 0.5-15% by weight mercapto compound and the remaining amount of solvent. In this example, m-cresol was used. And a cresol mixture (Mw = 8,000) containing p-cresol in a weight ratio of 40/60 and a novolak resin obtained by condensation polymerization in the presence of oxalic acid using a formaldehyde compound as an acid catalyst, 5% by weight of the photosensitive agent shown in (9), 5% by weight of the photosensitive agent shown in the above chemical formula (10), and 5% by weight of 1-dodecyl mercaptan compound as a mercapto compound were dissolved in dimethylformamide (DMF). The positive photoresist composition (No. 8 composition in Example 1) was used.

Thereafter, the photoresist film is exposed and developed to form photoresist patterns 64 and 66 having different thicknesses as shown in FIG.
For convenience of explanation, a portion of the metal layer 170 where wiring is formed, an amorphous silicon layer 160 doped with impurities, and an amorphous silicon layer 150 not doped with impurities are defined as wiring portions “A”, and the channel The portion of the amorphous silicon layer 160 doped with impurities and the portion of the amorphous silicon layer 150 not doped with impurities is defined as a channel portion “B” in a region excluding the channel and the wiring portion. The portion of the amorphous silicon layer 160 doped with impurities and the portion of the amorphous silicon layer 150 not doped with impurities are defined as another portion “C”.

  The photoresist pattern 66 located in the channel portion “B” of the thin film transistor among the photoresist patterns 64 and 66 is thinner than the portion located in the portion “A” where the data line is formed, and the remaining portion “ All photoresist "C" is removed. At this time, the ratio of the thickness of the photoresist pattern 66 remaining in the channel portion “B” and the thickness of the photoresist pattern 64 remaining in the “A” portion is varied according to the process conditions in the etching process described later, It is preferable that the thickness of the photoresist pattern 66 is ½ or less of the thickness of the photoresist pattern 64.

Thereafter, as shown in FIG. 26, the metal layer 170 exposed in the other portion “C” is wet-etched using an etching solution, so that the lower portion of the amorphous silicon layer 161 doped with impurities is formed. The other part “C” is exposed.
At this time, the upper part of the intrinsic amorphous silicon layer 154 located in the channel portion “B” may be partially removed to reduce the thickness, and the photoresist pattern 64 of the wiring portion “A” is also etched to some extent at this time. it can.

Next, the amorphous silicon layer 161 doped with the impurity located in the other portion “C” and the underlying intrinsic amorphous silicon layer 151 are removed, and the photoresist pattern 66 of the channel portion “B” is formed. The lower metal layer 174 is exposed by removing.
The photoresist removal of the channel portion “B” is performed simultaneously with the removal of the amorphous silicon layer 161 and the intrinsic amorphous silicon layer 151 doped with the impurity of the other portion “C” or separately. Residues of the photoresist pattern 66 remaining in the channel region “B” are removed by ashing, and the semiconductor layers 151 and 154 are completed at this stage.
Thereafter, the metal layer 174 located in the channel portion “B” and the amorphous silicon layer 164 doped with impurities are removed by etching. Further, the photoresist pattern 64 of the remaining wiring portion “A” is also removed. Accordingly, each of the metal layers 174 is completed while being separated into one data line 171 including the source electrode 173 and a plurality of drain electrodes 175, and the amorphous silicon layer 164 doped with impurities is also formed with the linear resistive contact layer 161. It is divided into island-type resistive contact layers 165 and completed.

  As described above, there are various methods for varying the thickness of the photoresist pattern depending on the position. For example, a translucent region as well as a transparent region and a light-shielding region are placed on the exposure mask. For the semi-transmissive region, a slit pattern, a lattice pattern, or a thin film having an intermediate transmittance or an intermediate thickness is used. When a slit pattern is used, it is preferable that the width of the slit and the interval between the slits are smaller than the resolution of the exposure device used in the photographic (exposure) process. Another example is to use a reflowable photoresist. That is, after forming a reflowable photoresist pattern with a normal mask having only a transparent region and a light-shielding region, a thin portion is formed by reflowing and flowing in a region where the photoresist does not remain.

If appropriate process conditions are provided, the lower layer can be selectively etched due to the difference in thickness of the photoresist patterns 64 and 66.
After a series of etching steps, a photoresist remover is applied onto the photoresist patterns 64 and 66 to remove the photoresist patterns 64 and 66, thereby including a plurality of source electrodes 173 as shown in FIG. A plurality of linear resistive contact layers 161 and a plurality of island-type resistive contact layers 165 that form a plurality of data lines 171, a plurality of drain electrodes 175, and end portions 179 of the data lines, and each include a plurality of protrusions 163; And a plurality of linear semiconductor layers 151 including a plurality of protrusions 154 are formed.

Next, as shown in FIGS. 29 and 30, a protective film 180 is formed so as to cover the semiconductor layer 154 that is not covered by the data lines 171 and 173 and the drain electrode 175. At this time, the protective film 180 is an organic material having excellent planarization characteristics and photosensitivity, such as a-Si: C: O, a-Si: O: F formed by plasma enhanced chemical vapor deposition (PECVD). The protective film 180 is formed by forming a low dielectric constant insulating material or silicon nitride, which is an inorganic material, in a fault or a plurality of layers.
Thereafter, a plurality of contact holes 185 and 182 are formed in the protective film 180 by a photoetching process. At this time, in the case of an organic film having photosensitivity, the contact hole can be formed only by a photographic process (coating, photosensitizing, developing).

  Next, as shown in FIGS. 17 and 18, a transparent conductive material such as ITO or IZO is deposited on the substrate 110, and is etched by a photoetching process using a mask, and ends of the data lines through the contact holes 185 and 182. The pixel electrode 190 connected to the drain electrode 175 is formed through the contact assisting member 82 and the contact hole 185 respectively connected to 179.

In this example, only one type of photoresist composition manufactured with a specific composition (the composition of No. 8 in Example 1) was applied, but the composition ratio is not particularly limited.
In this example, only the gate line and the data line were etched using the photoresist composition according to this example. However, the present invention is not limited to this, and is applied to all conductive or non-conductive layer patterns. Of course you can do it.
Although only the case where the gate line 121 and the data line 171 are formed in a double layer is shown, the present invention can be applied to the case where the gate line 121 and the data line 171 are formed in a single layer or multiple layers. Although a metal layer made of molybdenum and aluminum is applied as 171, it can be applied to all conductors applicable as wiring.

  The present invention is not limited to the above-described embodiments. Various modifications can be made without departing from the technical scope of the present invention.

FIG. 6 is a layout view illustrating a structure of a thin film transistor array panel according to a second embodiment of the present invention. FIG. 2 is a cross-sectional view taken along the line II-II ′ of the thin film transistor array panel of FIG. 1. FIG. 6 is a cross-sectional view for sequentially explaining a method of manufacturing a thin film transistor array panel according to a second embodiment of the present invention. FIG. 6 is a cross-sectional view for sequentially explaining a method of manufacturing a thin film transistor array panel according to a second embodiment of the present invention. FIG. 5 is a layout view for sequentially explaining a method of manufacturing a thin film transistor array panel according to a second embodiment of the present invention. FIG. 6 is a cross-sectional view taken along line VB-VB ′ of FIG. 5 for sequentially explaining a method of manufacturing a thin film transistor array panel according to a second embodiment of the present invention. FIG. 6 is a cross-sectional view for sequentially explaining a method of manufacturing a thin film transistor array panel according to a second embodiment of the present invention. FIG. 5 is a layout view for sequentially explaining a method of manufacturing a thin film transistor array panel according to a second embodiment of the present invention. FIG. 9 is a cross-sectional view taken along the line VIIB-VIIB ′ of FIG. 8 for sequentially explaining a method of manufacturing a thin film transistor array panel according to a second embodiment of the present invention. FIG. 5 is a cross-sectional view for sequentially explaining a method of manufacturing a thin film transistor array panel according to a second embodiment of the present invention. FIG. 5 is a cross-sectional view for sequentially explaining a method of manufacturing a thin film transistor array panel according to a second embodiment of the present invention. FIG. 5 is a layout view for sequentially explaining a method of manufacturing a thin film transistor array panel according to a second embodiment of the present invention. FIG. 13 is a cross-sectional view taken along line XB-XB ′ of FIG. 12 for sequentially explaining a method of manufacturing a thin film transistor array panel according to a second embodiment of the present invention. FIG. 5 is a cross-sectional view for sequentially explaining a method of manufacturing a thin film transistor array panel according to a second embodiment of the present invention. FIG. 5 is a layout view for sequentially explaining a method of manufacturing a thin film transistor array panel according to a second embodiment of the present invention. FIG. 16 is a cross-sectional view taken along a line XIIB-XIIB ′ of FIG. 15 for sequentially explaining a method of manufacturing a thin film transistor array panel according to a second embodiment of the present invention. FIG. 6 is a layout view of a thin film transistor array panel according to a third embodiment of the present invention. FIG. 18 is a cross-sectional view of the thin film transistor array panel of FIG. 17 taken along line XIV-XIV ′. FIG. 6 is a cross-sectional view for sequentially explaining a method of manufacturing a thin film transistor array panel according to another embodiment of the present invention. It is sectional drawing for demonstrating sequentially the manufacturing method of the thin-film transistor panel accompanying the 3rd Example of this invention. FIG. 6 is a layout view for sequentially explaining a method of manufacturing a thin film transistor array panel according to a third embodiment of the present invention. FIG. 22 is a cross-sectional view taken along line XVIIB-XVIIB ′ of FIG. 21 for sequentially explaining a method of manufacturing a thin film transistor array panel according to a third embodiment of the present invention. It is sectional drawing for demonstrating sequentially the manufacturing method of the thin-film transistor panel accompanying the 3rd Example of this invention. It is sectional drawing for demonstrating sequentially the manufacturing method of the thin-film transistor panel accompanying the 3rd Example of this invention. It is sectional drawing for demonstrating sequentially the manufacturing method of the thin-film transistor panel accompanying the 3rd Example of this invention. It is sectional drawing for demonstrating sequentially the manufacturing method of the thin-film transistor panel accompanying the 3rd Example of this invention. FIG. 6 is a layout view for sequentially explaining a method of manufacturing a thin film transistor array panel according to a third embodiment of the present invention. FIG. 28 is a cross-sectional view taken along line XXIIB-XXIIB ′ of FIG. 27 for sequentially explaining a method of manufacturing a thin film transistor array panel according to a third embodiment of the present invention. FIG. 6 is a layout view for sequentially explaining a method of manufacturing a thin film transistor array panel according to a third embodiment of the present invention. FIG. 30 is a cross-sectional view taken along line XXIIIB-XXIIIB ′ of FIG. 29 for sequentially explaining a method of manufacturing a thin film transistor array panel according to a third embodiment of the present invention. It is the photograph (SEM) which can confirm the reflow start temperature of a photoresist at the time of hard baking. It is a graph which shows the photoresist remaining film rate by the addition amount of a mercapto compound.

Explanation of symbols

40, 44, 60, photoresist 42, 46, 62, 64, 66 photoresist pattern 50, 51, 52 mask 110 insulating substrate 120 metal layer 121 gate line 124 gate electrode 131 storage electrode line 140 gate insulating film 150 intrinsic amorphous Silicon layer 160 Impurity-doped amorphous silicon layer 171 Data line 173 Source electrode 175 Drain electrode 177 Storage capacitor conductor 180 Protective film 181, 182, 185, 187 Contact hole 190 Pixel electrode 81, 82 Contact auxiliary member

Claims (14)

A novolak resin represented by the following chemical formula (1);
A mercapto compound represented by the following chemical formula (2):
A photosensitizer,
A photoresist composition comprising a solvent.
(In the chemical formula (1), R1 to R4 are each independently a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, n is an integer of 0 to 3, and in the chemical formula (2), R1 and R2 are each independently an alkyl group or an aryl group having 1 to 20 carbon atoms.)   The photoresist composition includes 5 to 50% by weight of a novolak resin, 0.5 to 15% by weight of a mercapto compound, 3 to 20% by weight of a photosensitive agent, and a remaining amount of a solvent. The photoresist composition of claim 1. The mercapto compounds are 2-mercapto toluene (2-mercapto toluene), 3- mercapto toluene (3-mercapto toluene), 4- mercapto toluene (4-mercapto toluene), 2 - mercapto - para - xylene (2-mercapto- para-xylen), 4-mercapto-meta-xylene (4-mercapto-meta-xylene), and at least one selected from the group consisting of 1-dodecyl mercaptan The photoresist composition of claim 1.   The photoresist composition according to claim 1, further comprising a silicon compound containing at least one functional group of an epoxy group and an amine group.   Examples of the silicon compound include (3-glycidoxypropyl) trimethoxysilane ((3-glycideoxypropyl) trimethylsilane), (3-glycidoxypropyl) triethoxysilane ((3-glycideoxypropyl) triethoxysilane), (3-glycideoxypropyl) methyldimethoxysilane ((3-glycideoxypropyl) methyldiethoxysilane) ((3-glycideoxypropyl) methyldiethoxysilane) (3-glycideoxypropyl) methyldiethoxysilane (3- Glycidoxypropyl) dimethylmethoxysilane ((3-glycide oxypropyl) dim ethyl methylsilane, (3-glycidoxypropyl) dimethylethoxysilane (3,4-oxyxypropyl), 3,4-epoxybutyltrimethoxysilane (3,4-epoxybutyltrimethyl, 3,3) 4-epoxybutyltriethoxysilane, 3- (3,4-epoxycyclohexyl) ethyltrimethoxysilane (2- (3,4-epoxycyclohexyl) ethyl trimethylsilane), 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyl trimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltriethoxysilane (2- (3,4-epoxy cyclohexyl) yl) ethyl triethoxy silane) and photoresist composition according to claim 4, characterized in that it comprises at least one member selected from the group consisting of aminopropyl trimethoxysilane (aminopropyl trimethoxy silane). Forming a conductive or non-conductive layer on the substrate;
A novolak resin represented by the following chemical formula (1), a mercapto compound represented by the following chemical formula (2), a photosensitizer, and the remaining on the conductive or non-conductive layer formed on the substrate. Forming a photoresist composition having an amount of solvent; and
Exposing and developing the photoresist composition to form a photoresist pattern;
Etching the conductive or non-conductive layer formed on the substrate by using the photoresist pattern.
(In the chemical formula (1), R1 to R4 are each independently a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, n is an integer of 0 to 3, and in the chemical formula (2), R1 and R2 are each independently an alkyl group or an aryl group having 1 to 20 carbon atoms.)   The photoresist composition includes 5 to 50% by weight of a novolak resin, 0.5 to 15% by weight of a mercapto compound, 3 to 20% by weight of a photosensitive agent, and a remaining amount of a solvent. The pattern forming method according to claim 6.   7. The method of forming a pattern according to claim 6, wherein the step of etching the conductive or non-conductive layer etches a portion excluding a region where a photoresist pattern is formed. Forming a gate line including a gate electrode on a substrate;
Forming a gate insulating film on the gate line;
Forming a semiconductor layer on the gate insulating film;
Forming a data line including a source electrode on the semiconductor layer and a drain electrode facing the source electrode at a predetermined interval;
Forming a pixel electrode connected to the drain electrode,
At least one of the steps includes a photolithography step;
The photolithography step includes a step of forming a conductive or non-conductive layer, a novolac resin represented by the following chemical formula (1) on the formed conductive or non-conductive layer, and a chemical formula ( 2) applying a photoresist composition having a mercapto compound represented by 2), a photosensitizer, and a solvent; exposing and developing the photoresist composition to form a photoresist pattern; and And a step of etching the conductive or non-conductive layer formed using a resist pattern.
(In the chemical formula (1), R _{1 to} R ₄ are each independently a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, n is an integer of 0 to 3, and the chemical formula (2) R ₁ and R ₂ are each independently an alkyl group or an aryl group having 1 to 20 carbon atoms.)   The photoresist composition includes 5 to 50% by weight of a novolak resin, 0.5 to 15% by weight of a mercapto compound, 3 to 20% by weight of a photosensitive agent, and a remaining amount of a solvent. A method for manufacturing a thin film transistor array panel according to claim 9.   10. The method of claim 9, wherein the step of forming the semiconductor layer and the step of forming the data line and the drain electrode are performed using the same photoresist film.   The step of forming the semiconductor layer and the step of forming the data line and the drain electrode may be performed by photolithography using a photoresist pattern having a first portion and a second portion thicker than the first portion. The method of manufacturing a thin film transistor array panel according to claim 11.   13. The method according to claim 12, wherein the first portion is formed to be positioned between the source electrode and the drain electrode, and the second portion is formed to be positioned above the data line. A method for producing the thin film transistor array panel described in the above.   10. The method of claim 9, wherein the step of etching the formed conductive or non-conductive layer includes etching a portion excluding a region where a photoresist pattern is formed. .