KR20060070354A - Photoresist composition, method for forming a pattern using the same, and method for manufacturing thin film transistor array panel using the same - Google Patents

Abstract

The present invention relates to alkali-soluble resins, photosensitizers and solvents containing meta (m) -cresol and para (p) -cresol in a weight ratio of 8: 2 and containing novolak resins having an average molecular weight of 10,000 to 20,000. Provided are a photoresist composition, a method of forming a pattern using the photoresist composition, and a method of manufacturing a thin film transistor array panel.

Photoresist composition, meta-cresol, para-cresol, sensitivity, resolution

Description

Photoresist composition, method for forming a pattern using the same and method for manufacturing a thin film transistor array panel using the same, and method for manufacturing thin film transistor array panel using the same

1 is a layout view illustrating a structure of a thin film transistor array panel according to an exemplary embodiment of the present invention.

FIG. 2 is a cross-sectional view of the thin film transistor array panel of FIG. 1 taken along line II-II ',

3 to 12B are layout views or cross-sectional views sequentially illustrating a method of manufacturing a thin film transistor array panel according to an exemplary embodiment of the present invention.

Figure 13 (a) is a molecular weight distribution of the conventional novolak resin, (b) is a graph showing the molecular weight distribution of the novolak resin according to the present invention,

14A to 14D are photographs showing a photoresist pattern according to an embodiment of the present invention, and (e) is a photograph showing a photoresist pattern according to a comparative example.

* Explanation of symbols for main parts of the drawings

40, 41: photoresist 40a, 41a: photoresist pattern                 

50, 51: mask 110: insulating substrate

120: metal layer 121: gate line

124: gate electrode 81, 82: contact auxiliary member

140: gate insulating film 150: intrinsic amorphous silicon layer

160: impurity amorphous silicon layer 171: data line

173: source electrode 175: drain electrode

177: conductor for holding capacitor 180: protective film

181, 185, 187, and 182 contact holes 190 pixel electrodes

The present invention relates to a photoresist composition, a pattern forming method using the photoresist composition, and a manufacturing method of a thin film transistor array panel.

Liquid Crystal Display (Liquid Crystal Display) is one of the most widely used flat panel display (Plat Panel Display), which consists of two display panels on which electrodes are formed and a liquid crystal layer inserted between them, The display device is applied to rearrange the liquid crystal molecules of the liquid crystal layer to control the amount of light transmitted.

Among the liquid crystal display devices, the one currently used is a structure in which a field generating electrode is provided in each of the two display panels. Among them, a structure in which a plurality of pixel electrodes are arranged in a matrix form on one display panel, and one common electrode covers the entire surface of the display panel on another display panel is mainstream. The display of an image in such a liquid crystal display is performed by applying a separate voltage to each pixel electrode. To this end, a thin film transistor, which is a three-terminal element for switching a voltage applied to the pixel electrode, is connected to each pixel electrode, and a gate line for transmitting a signal for controlling the thin film transistor and a voltage to be applied to the pixel electrode. Data lines for transmitting the P are formed on display panels (hereinafter, referred to as thin film transistor display panels). The thin film transistor serves as a switching element that transfers or blocks an image signal transmitted through a data line to a pixel electrode according to a scan signal transmitted through a gate line. Such a thin film transistor also serves as a switching element for individually controlling each light emitting element in an active organic light emitting diode (AM-OLED) which is a self-luminous element.

In a display device such as a liquid crystal display or an organic light emitting display, it is necessary to reduce the length of a channel in order to improve the response speed of the thin film transistor. For this purpose, fine circuit pattern technology is important.

In general, a fine circuit pattern is formed by uniformly applying a photoresist composition on a metal film or an insulating film formed on a substrate, exposing and developing the photoresist composition using a mask of a predetermined pattern, and then etching the metal film or the insulating film. Is formed in steps.

 At this time, in order to increase the resolution of the fine circuit pattern, it is important to improve the development contrast of the photoresist composition. The development contrast refers to the ratio of the film loss amount in a region exposed by development to the film loss amount in an unexposed region.

However, in the case of improving the development contrast, there is a problem in that a relatively large exposure dose is required and the sensitivity is lowered.

Accordingly, the present invention is to solve the above problems, a photoresist composition that can improve the development contrast without reducing the sensitivity and increase the resolution of the fine circuit pattern, a method of forming a pattern using the photoresist composition and a thin film A method of manufacturing a transistor display panel is provided.

The photoresist composition according to the present invention includes an alkali-soluble resin and a light containing a novolak resin containing meta (m) -cresol and para (p) -cresol in a weight ratio of 8: 2 and having an average molecular weight of 10,000 to 20,000. Sensitizers and solvents.

In addition, the pattern formation method according to the present invention comprises the steps of forming a conductive or nonconductive layer on a substrate, wherein the meta (m) -cresol and para (p) -cresol are contained on a weight ratio of 8: 2. Forming a photoresist composition comprising an alkali soluble resin, a photosensitizer and a solvent comprising a novolac resin having an average molecular weight of 10,000 to 20,000, and exposing and developing the photoresist composition to form a photoresist pattern. And etching the layer using the photoresist pattern.                     

In addition, the method of manufacturing a thin film transistor array panel according to the present invention may include forming a gate line on a substrate, forming a semiconductor layer on the gate line, a data line including a source electrode on the semiconductor layer, the source electrode, and a predetermined value. Forming a drain electrode facing each other and forming a pixel electrode connected to the drain electrode, at least one of each of the steps including a photolithography step, wherein the photolithography step is conductive or non-conductive. Forming a malleable layer comprising an alkali containing a novolak resin having a weight ratio of 8: 2 meta (m) -cresol and para (p) -cresol at a weight ratio of 8: 2 and having an average molecular weight of 10,000 to 20,000. Forming a photoresist composition comprising a soluble resin, a photosensitizer and a solvent, exposing the photoresist composition And developing to form a photoresist pattern and etching the layer using the photoresist pattern.

Hereinafter, the photoresist composition according to the present invention will be described in detail.

The photoresist composition according to the present invention is an alkali-soluble resin containing a novolak resin in which the content ratio of meta (m) -cresol represented by formula (1) and para (p) -cresol represented by formula (2) is adjusted to 8: 2. It includes.

Novolak resins are generally polymer polymers synthesized by reacting a phenol monomer and an aldehyde compound in the presence of an acid catalyst.

In the present invention, as the phenol monomer, m-cresol of the formula (1) and p-cresol of the formula (2) are synthesized in a specific ratio, and as the aldehyde compound, formaldehyde, p-formaldehyde, benzaldehyde, nitrobenzaldehyde, acet 1 type, or 2 or more types selected from aldehydes etc. are mixed and used. In addition, the acid catalyst added during the reaction of the phenol compound and the aldehyde compound may be selected from, for example, hydrochloric acid, nitric acid, sulfuric acid, formic acid or oxalic acid.

The average molecular weight of the novolak resin in the present invention is 10,000 or more, preferably 10,000 to 20,000. Thus, the resolution can be improved by including the high molecular weight novolak resin. The resolution refers to the degree to which fine circuit lines appear as highly sensitive images according to the space interval of the mask used when exposing the photoresist film. In general, the higher the molecular weight, the higher the resolution. However, when molecular weight is high, there exists a tendency for the dissolution rate to a developing solution to become slow.

Therefore, in the present invention, in order to solve this dissolution rate problem, a novolak resin containing m-cresol and p-cresol in a ratio of 8: 2 is used. Since m-cresol has a relatively high dissolution rate in the developer, when the content ratio of m-cresol in the novolak resin is increased, the sensitivity can be improved by increasing the dissolution rate.

In addition, the novolak resin of this invention has a molecular weight distribution of 4 or less. This shows a uniform molecular weight distribution by removing unreacted monomer and dimer components from the molecular distribution of meta-cresol and para-cresol contained in the existing photoresist composition.

Figure 13 is a graph showing the molecular weight distribution of the conventional and the novolak resin according to the present invention, (a) is the molecular weight distribution of the conventional novolak resin having a molecular weight of 4900 m-cresol and p-cresol 4: 6 (B) shows a uniform molecular weight distribution of the novolak resin according to the present invention containing m-cresol and p-cresol at 8: 2 and having a molecular weight of 11500. As shown here, the conventional novolak resin (a) has a large number of peaks representing various molecular weights over a wide range, whereas the novolak resin (b) according to the present invention is the number of such peaks (peak) It can be seen that the decrease and the uniform molecular weight distribution. This is because the novolak resin according to the present invention removes unreacted monomer and dimer components through polarization synthesis and distributes only molecules of uniform size.

Thereby, the resolution versus sensitivity can be remarkably improved by the high molecular weight, the proper ratio of m / p-cresol and the uniform molecular distribution.

The novolak resin having a content ratio of m-cresol and p-cresol of 8: 2 is preferably contained in an amount of 5 to 30% by weight based on the total content of the alkali-soluble resin.

The alkali-soluble resin is a novolak resin having a content ratio of m-cresol and p-cresol 4: 6 and an average molecular weight of 4000 to 6000, in addition to the novolak resin having a content ratio of 8: 2 m-cresol and p-cresol. It further includes. Here, the novolak resin having a content ratio of m-cresol and p-cresol of 4: 6 and an average molecular weight of 4000 to 6000 is contained at 70 to 95% by weight relative to the total content of the alkali-soluble resin.

The alkali-soluble resin is preferably included in about 5 to 45% by weight relative to the total content of the photoresist composition.

The photosensitive agent, which is one component of the photoresist composition, is generally not particularly limited as long as it is a compound that reacts with light during the exposure process to cause a photo-chemical reaction. Preferably diazide-based compounds are suitable, inter alia 2,3,4,4'-tetrahydroxybenzophenol-1,2-naphthoquinonediazide-5-sulfonate or 2,3,4-tri It may be selected from hydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate or a mixture thereof.

The photosensitizer is contained in 1 to 20% by weight based on the total content of the photoresist composition. This is because, when the photosensitive agent is contained in less than 1% by weight, the sensitivity is reduced during exposure, and when it is contained in excess of 20% by weight, the sensitivity is rapidly increased. Therefore, it is preferable to contain 1 to 20% by weight in order to maintain an appropriate response rate.

In addition, the photoresist composition may further include other additives such as plasticizers, stabilizers or surfactants, as desired.

The alkali-soluble resins, photosensitizers and various additives are used in the form of a solution dissolved in an organic solvent. As an organic solvent, for example, ethyl acetate, butyl acetate, diethylene glycol dimethyl ether, diethylene glycol dimethyl ethyl ether, methyl methoxy propionic acid, ethyl ethoxy propionic acid, ethyl lactic acid, propylene glycol methyl ether acetate, propylene glycol methyl ether, Propylene glycol propyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol methyl acetate, diethylene glycol ethyl acetate, acetone, methyl isobutyl ketone, cyclohexanone, dimethylformamide (DMF), N, N -Dimethylacetamide (DMAc), N-methyl-2-pyrrolidone, γ-butylolactone, diethyl ether, ethylene glycol dimethyl ether, diglyme, tetrahydrofuran, methanol, ethanol, propanol, isopropanol, methylcell Low solve, ethyl cellosolve, diethylene glycol methyl ether, diethylene glycol ethyl ether, dipropylene glycol It may be selected from colmethyl ether, toluene, xylene, hexane, heptane, octane and the like.

The solvent is contained in the remaining amount of the total content of the photoresist composition, excluding alkali-soluble resins, photosensitizers, and various additives, and preferably 50 to 95% by weight.

Hereinafter, exemplary embodiments of the present invention will be described in detail so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

Example 1

In this example, sensitivity and resolution were evaluated when the photoresist composition according to the present invention was applied.

Preparation of Photoresist Composition

A furnace having a molecular weight of 4896 with a molecular weight of 4896 with 40 parts by weight of m-cresol and 60 parts by weight of p-cresol at 10 parts by weight of a novolak resin having a molecular weight of 11219. After mixing 90 parts by weight of the rock resin, 30 parts by weight of 2,3,4,4'-tetrahydroxybenzophenol-1,2-naphthoquinone diazide-5-sulfonate was mixed so that the solid content concentration was 30 parts by weight. The mixture was then dissolved in a propylene glycol monomethyl ether acetate solvent. The solution was then filtered through a 0.2 μm filter to obtain a photoresist composition.

Photo process

First, aluminum (Al) and molybdenum (Mo) were sequentially stacked on a substrate made of glass or the like. Then, the photoresist composition prepared above was applied on the metal layer by a spin coating method. The photoresist film was then pre-baked for 90 seconds at a temperature of about 90 ° C. Subsequently, ultraviolet rays (UV) having an intensity of 12 mW / cm 2, 45 mW / cm 2, and 28 mW / cm 2 at the composite wavelengths (365 nm, 405 nm, and 436 nm) were irradiated for 5 seconds using a pattern forming mask. It was. Subsequently, after developing for 1 minute at 25 degreeC with 2.38 weight% of tetramethyl ammonium hydroxide (TMAH) aqueous solution, the pattern was wash | cleaned for 1 minute with ultrapure water.

Example 2

40 parts by weight of m-cresol and 60 parts by weight of p-cresol were carried out in the same manner as in Example 1 except that 80 parts by weight of m-cresol and 20 parts by weight of p-cresol were synthesized in 20 parts by weight of novolak resin having a molecular weight of 11219. A photoresist composition solution containing 80 parts by weight of a novolak resin having a molecular weight of 4896 was synthesized.

Using the photoresist composition was carried out in the same manner as in Example 1 to prepare a pattern.

Example 3

Performed in the same manner as in Example 1, 40 parts by weight of m-cresol and 60 parts by weight of p-cresol to 10 parts by weight of a novolak resin having a molecular weight of 15931 of 80 parts by weight of m-cresol and 20 parts by weight of p-cresol A photoresist composition solution was prepared comprising 90 parts by weight of a novolak resin having a molecular weight of 4896.

Using the photoresist composition was carried out in the same manner as in Example 1 to prepare a pattern.

Example 4

40 parts by weight of m-cresol and 60 parts by weight of p-cresol were carried out in the same manner as in Example 1, except that 80 parts by weight of m-cresol and 20 parts by weight of p-cresol were synthesized in 15 parts by weight of novolak resin having a molecular weight of 15931. A photoresist composition solution containing 85 parts by weight of a novolak resin having a molecular weight of 4896 was synthesized.

Using the photoresist composition was carried out in the same manner as in Example 1 to prepare a pattern.

[Comparative Example]

Molecular weight of the product synthesized in the same manner as in Example 1 except for the synthesis of novolak resin synthesized by 80 parts by weight of m-cresol and 20 parts by weight of p-cresol, 40 parts by weight of m-cresol and 60 parts by weight of p-cresol A photoresist composition solution containing 100 parts by weight of the novolac resin 4896 was prepared.

Using the photoresist composition was carried out in the same manner as in Example 1 to prepare a pattern.

The sensitivity and resolution of the patterns obtained in Examples 1, 2, 3, and 4 and Comparative Examples were measured. Here, the sensitivity was obtained by measuring the gamma value after exposure and development using a sensitivity mask and measuring the sensitivity using this value. The resolution was determined by the minimum size formed through the scanning electron microscope (SEM) measurement of the obtained pattern.

The results are shown in Table 1.

Sensitivity (mJ / ㎠) Gamma (γ) value Resolution (μm) Example 1 35.56 0.78 1.1 Example 2 37.36 0.80 1.0 Example 3 37.35 0.80 1.0 Example 4 39.58 0.82 0.8 Comparative example 38.32 0.80 1.2

As shown in Table 1, according to Examples 1 to 4 according to the present invention prepared by adding a novolak resin having a molecular weight of 10,000 or more, a molecular weight distribution of 4 or less and a composition ratio of m-cresol and p-cresol of 8: 2 In the case of the photoresist composition, the sensitivity was superior to or similar to that of the comparative example in terms of sensitivity, and the characteristics superior to the comparative example in terms of resolution.

In Examples 1 and 3, Example 1 exhibited excellent sensitivity, and in Examples 1/2 and 3/4 using novolac resins having the same molecular weight, the resolutions of Examples 2 and 4, respectively Was found to be excellent.

This indicates that in the case of a photoresist composition containing a novolak resin having the same structure, as the molecular weight increases, the dissolution rate in the aqueous alkali solution is lowered. In the case of the novolak resin having the same molecular weight, 80 parts by weight of m-cresol and p- As the content of the product synthesized with 20 parts by weight of cresol increases, the resolution is improved.

In the present invention, despite the use of a novolak resin having a higher molecular weight than the conventional novolak resin, the reason for the high sensitivity is that the ratio of m-cresol having a high dissolution rate for an alkali developer in the molecular chain of the novolak resin is relatively high. Because. In addition, the excellent results in sensitivity versus resolution is due to the high molecular weight of the novolak resin and improved resolution due to the stable distribution characteristics of m / p-cresol.

Example 5

In the present embodiment, a method of manufacturing a thin film transistor array panel using a photoresist composition according to an embodiment of the present invention will be described with reference to FIGS. 1 to 12B.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like parts are designated by like reference numerals throughout the specification. When a portion of a layer, film, region, plate, etc. is said to be "on top" of another part, this includes not only when the other part is "right over" but also when there is another part in the middle. On the contrary, when a part is "just above" another part, there is no other part in the middle.                     

1 is a layout view illustrating a structure of a thin film transistor array panel according to an exemplary embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along line II-II ′ of the thin film transistor array panel of FIG. 1.

As shown in FIGS. 1 and 2, a plurality of gate lines 121 are formed on the insulating substrate 110 to transfer gate signals. The gate line 121 extends in the horizontal direction, and a part of each gate line 121 forms a plurality of gate electrodes 124. In addition, another portion of each gate line 121 protrudes downward to form a plurality of expansions 127.

The gate line 121 is formed on the first metal layers 124p and 127p made of aluminum (Al) or aluminum alloy (AlNd) in which a predetermined amount of neodymium (Nd) is added to the aluminum, and on the first metal layers 124p and 127p. It is formed of a second metal layer (124q, 127q) made of molybdenum (Mo).

Side surfaces of the first metal layers 124p and 127p and the second metal layers 124q and 127q are inclined, respectively, and the inclination angle is about 30 to 80 degrees with respect to the surface of the substrate 110.

A plurality of linear semiconductor layers 151 made of hydrogenated amorphous silicon or the like are formed on the gate insulating layer 140. The linear semiconductor layer 151 extends in the vertical direction, from which a plurality of extensions 154 extend toward the gate electrode 124. Further, the linear semiconductor layer 151 increases in width near the point where the linear semiconductor layer 151 meets the gate line 121 to cover a large area of the gate line 121.                     

On the top of the semiconductor layer 151, a linear ohmic contact and a plurality of island resistive contact layers 163 and 165 made of a material such as n + hydrogenated amorphous silicon doped with silicide or n-type impurities at a high concentration. ) Is formed. The islands of ohmic contact 163 and 165 are paired and positioned on the protrusion 154 of the semiconductor layer 151. Side surfaces of the semiconductor layer 151 and the ohmic contacts 163 and 165 are also inclined, and the inclination angle is 30 to 80 ° with respect to the substrate 110.

On the ohmic contacts 161, 163, and 165 and the gate insulating layer 140, a plurality of data lines 171, a plurality of drain electrodes 175, and a plurality of conductors for a storage capacitor ( storage capacitor conductor 177 is formed.

The data line 171 extends in the vertical direction to cross the gate line 121 and transmit a data voltage. A plurality of branches extending from the data line 171 toward the drain electrode 175 forms a source electrode 173. The pair of source and drain electrodes 173 and 175 are separated from each other and positioned opposite to the gate electrode 124.

The data lines 171 and 175 including the source electrode 173 and the drain electrode 175 may include a first metal layer 171q and 175q including aluminum and molybdenum formed under and over the first metal layer. It is formed of a plurality of layers consisting of the second metal layers 171p and 175p and the third metal layers 171r and 175r. In this way, the aluminum or aluminum alloy layer having a low specific resistance is interposed between the molybdenum alloy layers, so that the aluminum layer interposed between the lower semiconductor layer and the upper pixel electrode is maintained while maintaining the low specific resistance. By not directly contacting, there is an advantage in that the characteristics of the thin film transistor due to poor contact can be prevented.

The gate electrode 124, the source electrode 173, and the drain electrode 175 together with the protrusion 154 of the semiconductor 151 form a thin film transistor (TFT), and the channel of the thin film transistor is a source. A protrusion 154 is formed between the electrode 173 and the drain electrode 175. The storage capacitor conductor 177 overlaps the extension portion 127 of the gate line 121.

Similarly to the gate line 121, the data line 171, the drain electrode 175, and the storage capacitor conductor 177 are also inclined at an angle of about 30 to 80 ° with respect to the substrate 110.

The island-type ohmic contact layers 163 and 165 exist between the semiconductor layer 154 below and the source electrode 173 and the drain electrode 175 thereon, and serve to lower the contact resistance. The linear semiconductor layer 151 has an exposed portion between the source electrode 173 and the drain electrode 175, and is not covered by the data line 171 and the drain electrode 175, and in most regions, the linear semiconductor layer ( Although the width of the 151 is smaller than the width of the data line 171, as described above, the width of the 151 is increased at the portion where the gate line 121 meets, thereby increasing the insulation between the gate line 121 and the data line 171.

On the data line 171, the drain electrode 175, the conductive capacitor 177 for the storage capacitor, and the exposed semiconductor layer 151, an organic material having excellent planarization characteristics and photosensitivity, and plasma chemical vapor deposition ( Plasma Enhanced Chemical Vapor Deposition (PECVD), a low dielectric constant insulating material such as a-Si: C: O, a-Si: O: F, or a passivation layer 180 made of an inorganic material such as silicon nitride It is formed of a single layer or a plurality of layers. For example, when formed of an organic material, a portion of the semiconductor layer 154 between the source electrode 173 and the drain electrode 175 is exposed to prevent the organic material of the passivation layer 180 from contacting the lower portion of the organic layer. An insulating film (not shown) made of silicon nitride (SiNx) or silicon oxide (SiO ₂ ) may be further formed.

The passivation layer 180 includes a plurality of contact holes 185 exposing the gate portion 129, the drain electrode 175, the storage capacitor conductor 177, and the data portion 179. 187 and 182 are formed.

A plurality of pixel electrodes 190 and a plurality of contact assistants 82 made of ITO or IZO are formed on the passivation layer 180.

The pixel electrode 190 is physically and electrically connected to the drain electrode 175 and the storage capacitor conductor 177 through the contact holes 185 and 187, respectively, to receive the data voltage from the drain electrode 175 and to maintain the storage capacitor. The data voltage is transmitted to the existing conductor 177.

The pixel electrode 190 to which the data voltage is applied rearranges the liquid crystal molecules of the liquid crystal layer by generating an electric field together with a common electrode (not shown) of another display panel (not shown) to which a common voltage is applied. Let's do it.

The contact auxiliary members 81 and 82 are connected to the end portion 129 of the gate line and the end portion 179 of the data line through the contact holes 181 and 182, respectively. The contact auxiliary members 81 and 82 compensate for and protect the adhesion between the end portion 129 of the gate line and the end portion 179 of the data line and an external device such as a driving integrated circuit.

Next, a method of manufacturing the thin film transistor array panel shown in FIGS. 1 and 2 according to an embodiment of the present invention will be described in detail with reference to FIGS. 3 to 12B and FIGS. 1 and 2.

First, as shown in FIG. 3, the first metal layer 120p including aluminum (Al) and the second metal layer 120q containing molybdenum (Mo) are sequentially stacked on the insulating substrate 110.

In this case, the first metal layer 120p and the second metal layer 120q are formed by co-sputtering.

In the embodiment of the present invention, aluminum alloys (Al-Nd) and molybdenum (Mo) in which neodymium (Nd) is added to aluminum at about 2 at% are used as targets of the sputtering.

The joint sputtering is performed in the following manner.

First, the first metal layer 120p made of aluminum alloy is formed on the substrate 110 by applying power only to the aluminum alloy target without applying power to the molybdenum target. In this case, it is desirable to have a thickness of about 2,500 kPa.

Next, after the power applied to the aluminum alloy target is turned off, the power applied to molybdenum is applied to form the second metal layer 120q.

Next, as shown in FIG. 4, the photoresist composition prepared in Example 2 is coated on the second metal layer 120q by a spin coating method.

Next, the photoresist film 40 is exposed using the mask 50 and then developed.

Subsequently, as shown in FIG. 5, the first metal layer 120p and the second metal layer 120q in the region except for the portion where the photoresist pattern 40a remains are etched at once. At this time, an etchant containing phosphoric acid (H ₃ PO ₄ ), nitric acid (HNO ₃ ), acetic acid (CH ₃ COOH) and demineralized water in an appropriate ratio is suitable.

Next, the photoresist pattern 40a is removed using a photoresist stripper to include a gate electrode 124, an extension 127, and an end portion 129 of the gate line as shown in FIGS. 6A and 6B. The gate line 121 is formed.

Next, as illustrated in FIGS. 7A and 7B, the gate insulating layer 140 is formed by depositing silicon nitride (SiNx) or silicon oxide (SiO ₂ ) to cover the gate line 121. The stacking temperature of the gate insulating layer 140 is preferably about 250 to 500 ° C., and the thickness is about 2,000 to 5,000 kPa.

A three-layer film of intrinsic amorphous silicon and an impurity doped amorphous silicon layer is successively stacked on the gate insulating layer 140.

Subsequently, the photoresist composition prepared in Example 2 was applied onto the amorphous silicon layer doped with impurities, and then exposed and developed to form a linear intrinsic comprising a plurality of protrusions 154 and a plurality of impurity semiconductor patterns 164, respectively. The semiconductor layer 151 and the amorphous silicon layer 161 doped with impurities are formed.

Next, as shown in FIG. 8, the first metal layer 170p including molybdenum, the second metal layer 170q including aluminum, and molybdenum may be formed on the amorphous silicon layer 161 doped with impurities by sputtering or the like. The third metal layer 170r is sequentially deposited. The metal layer is formed to have a thickness of about 3000 Pa by combining the first metal layer 170p, the second metal layer 170q, and the third metal layer 170r, and the sputtering temperature is preferably about 150 ° C.

Subsequently, as shown in FIG. 9, the photoresist composition prepared in Example 2 is coated on the third metal layer 170r by spin coating or the like, and then the photoresist film 41 is formed using the mask 51. After exposing, it develops.

Next, as shown in FIG. 10, the metal layer 170 in the region except for the portion where the photoresist pattern 41a remains is etched. In this case, an etchant containing phosphoric acid (H ₃ PO ₄ ), nitric acid (HNO ₃ ), acetic acid (CH ₃ COOH) and demineralized water in an appropriate ratio is suitable.

Subsequently, the photoresist pattern 41a is removed using a photoresist releasing agent, thereby as shown in FIGS. 11A and 11B, the source electrode 173, the drain electrode 175, the storage capacitor conductor 177, and An end portion 179 of the data line is formed.

Subsequently, the portions of the impurity semiconductor layers 161 and 165 that are not covered by the source electrode 173, the drain electrode 175, and the storage capacitor conductor 177 are removed to include the plurality of protrusions 163, respectively. The plurality of linear ohmic contacts 161 and the plurality of islands of ohmic contact 165 are completed while exposing portions of the intrinsic semiconductor 154 thereunder. In this case, it is preferable to perform oxygen (O ₂ ) plasma to stabilize the surface of the exposed intrinsic semiconductor 154.

Next, as shown in FIGS. 12A and 12B, organic materials having excellent planarization characteristics and photosensitivity, a-Si: C: O, a formed by plasma enhanced chemical vapor deposition (PECVD) A passivation layer 180 is formed by forming a low dielectric constant insulating material such as -Si: O: F or silicon nitride (SiNx), which is an inorganic material, in a single layer or a plurality of layers.

Thereafter, the photoresist composition prepared in Example 2 was applied on the passivation layer 180 by spin coating, exposed to light, and developed to pass through the passivation layer 180 and the gate insulating layer 140 to pass through the contact holes 181, 185, and 187. , 182). In this case, in the case of the organic film having photosensitivity, the contact hole may be formed only by a photolithography process, and the gate opening 140 and the passivation layer 180 may be formed under etching conditions having substantially the same etching ratio.

Next, as shown in FIGS. 1 and 2, after the ITO or IZO is laminated on the substrate by sputtering, the photoresist composition prepared in Example 2 is applied, and then exposed and developed to expose the plurality of pixel electrodes 190. And a plurality of contact auxiliary members 81 and 82 are formed.

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of the invention.

As described above, by using a photoresist composition containing a novolak resin having a molecular weight of 10,000 or more and m-cresol and p-cresol synthesized at 80% by weight to 20% by weight, dissolution rate of the exposed portion and the non-exposed portion during pattern formation Increasing the difference and improving the resolution compared to the sensitivity due to the influence of the high molecular weight. Therefore, it can be effectively applied for the pattern formation of the photoresist exhibiting a resolution reduction due to the fast sensitivity in the conventional resin, thereby low cost, low power consumption, high reliability and light and small size, etc. required in display devices such as liquid crystal display devices It is possible to improve the fine wiring formation technique for realizing the characteristics.

Claims (20)

Photoresist comprising an alkali-soluble resin, a photosensitizer and a solvent containing meta (m) -cresol and para (p) -cresol in a weight ratio of 8: 2 and containing a novolak resin having an average molecular weight of 10,000 to 20,000. Composition. The photoresist composition of claim 1, wherein the novolak resin has a molecular weight distribution of 4 or less. The photoresist composition of claim 1, wherein the novolak resin is included in an amount of 5 to 30 wt% based on the total weight of the alkali-soluble resin. The photoresist composition of claim 1, wherein the alkali-soluble resin comprises meta (m) -cresol and para (p) -cresol in a weight ratio of 4: 6, and includes a novolak resin having an average molecular weight of 4,000 to 6,000. 5. The novolak resin of claim 4, wherein the meta (m) -cresol and para (p) -cresol are included in a weight ratio of 4: 6 and the average molecular weight is 4,000 to 6,000. Photoresist composition comprising 95% by weight.  The photoresist composition of claim 1, wherein the photosensitive agent is a diazide compound. The photoresist composition of claim 6, wherein the photosensitizer is 2,3,4,4′-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate. The photoresist composition of claim 1, wherein the photoresist composition comprises 5 to 45 wt% of an alkali-soluble resin, 1 to 20 wt% of a photosensitive agent, and a residual amount of a solvent. Forming a conductive or nonconductive layer over the substrate, Alkali-soluble resins, photosensitizers and solvents containing meta (m) -cresol and para (p) -cresol in a weight ratio of 8: 2 on the layer and containing novolak resins having an average molecular weight of 10,000 to 20,000. Forming a photoresist composition, Exposing and developing the photoresist composition to form a photoresist pattern, and Etching the layer using the photoresist pattern. The method of claim 9, wherein the novolak resin has a molecular weight distribution of 4 or less. The method of claim 9, wherein the novolak resin is included in an amount of 5 to 30 wt% based on the total weight of the alkali-soluble resin. The method of claim 9, wherein the alkali-soluble resin includes meta (m) -cresol and para (p) -cresol in a weight ratio of 4: 6, and includes a novolak resin having an average molecular weight of 4,000 to 6,000. . The method of claim 9, wherein the forming of the photoresist composition comprises 5 to 45 wt% of an alkali soluble resin, 1 to 20 wt% of a photosensitive agent, and a residual amount of a solvent. The method of claim 9, wherein the etching of the layer comprises etching portions other than a region where the photoresist pattern is formed. Forming a gate line on the substrate, Forming a semiconductor layer on the gate line; Forming a data line including a source electrode on the semiconductor layer and a drain electrode facing the source electrode at a predetermined interval; and Forming a pixel electrode connected to the drain electrode; At least one of each step includes a photo etching step, The photolithography step includes forming a conductive or non-conductive layer, wherein meta (m) -cresol and para (p) -cresol are contained in a weight ratio of 8: 2 on the layer and have an average molecular weight of 10,000 to 20,000. Forming a photoresist composition comprising an alkali soluble resin containing a phosphorus novolak resin, a photosensitive agent, and a solvent; exposing and developing the photoresist composition to form a photoresist pattern; and using the photoresist pattern Etching the layer to form a thin film transistor array panel. The method of claim 15, wherein the novolak resin has a molecular weight distribution of 4 or less. The method of claim 15, wherein the novolak resin is included in an amount of 5 to 30 wt% based on the total weight of the alkali-soluble resin. The thin film transistor array panel of claim 15, wherein the alkali-soluble resin comprises meta (m) -cresol and para (p) -cresol in a weight ratio of 4: 6, and includes a novolak resin having an average molecular weight of 4,000 to 6,000. Manufacturing method. The method of claim 15, wherein the forming of the photoresist composition comprises manufacturing a thin film transistor array panel using a photoresist composition comprising 5 to 45 wt% of an alkali-soluble resin, 1 to 20 wt% of a photosensitive agent, and a residual amount of a solvent. Way. The method of claim 15, wherein the etching of the layer comprises etching portions other than a region where the photoresist pattern is formed.

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