KR101661695B1 - Method of fabricating thin film transistor substrate and photoresist composition used therein - Google Patents

Abstract

There is provided a method of manufacturing a thin film transistor panel in which defects of fine patterns are reduced and processing time is shortened, and a photoresist composition used therefor. A method of manufacturing a thin film transistor panel includes the steps of forming a conductive film made of a conductive material on a substrate, forming an etching pattern made of a photoresist composition on the conductive film, etching the conductive film using the etching pattern as an etching mask, Wherein the photoresist composition comprises a first novolac resin, a binder resin comprising a second novolak resin represented by the following formula (1) or (2), and a second resin selected from the group consisting of a diazide compound A photosensitizer, and a solvent.

[Chemical Formula 1]

Here, R ₁ to R ₃ are alkyl groups and R ₄ is an alkylene group.

(2)

Here, R ₁ to R ₅ are alkyl groups.

 A photoresist composition, a fine electrode, a pixel electrode, a novolak resin

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method of manufacturing a thin film transistor panel, and a method of fabricating the thin film transistor substrate and a photoresist composition,

The present invention relates to a method of manufacturing a thin film transistor panel and a photoresist composition used therefor, and more particularly, to a method of manufacturing a thin film transistor panel in which defects of a fine pattern are reduced and a processing time is shortened, .

In order to form a fine circuit pattern such as a display device circuit or a semiconductor integrated circuit, a photoresist composition is uniformly coated or coated on an insulating film or a conductive metal film on a substrate. The coated photoresist composition is then exposed and developed in the presence of a mask of the desired shape to produce a pattern of the desired shape. Then, a metal film or an insulating film is etched using a mask, and the remaining photoresist film is removed to form a fine circuit on the substrate.

On the other hand, as electronic devices are required to have higher performance, the degree of integration of devices has been increased. In order to integrate a plurality of devices on a limited substrate, it has been necessary to implement a microcircuit pattern. Accordingly, research has been conducted to improve the resolution and the like of a photoresist composition used in forming a fine circuit pattern.

In order to form a fine circuit pattern, the photoresist composition must have improved photosensitivity, residual film ratio, development contrast, resolution, solubility of the polymer resin, adhesion to the substrate, and CD uniformity.

Thereby, at the time of forming the fine circuit pattern, the defects of the pattern can be reduced, and the processing time can also be shortened.

A problem to be solved by the present invention is to provide a method of manufacturing a thin film transistor panel in which defects of a fine pattern are reduced and a processing time is shortened.

Another object of the present invention is to provide a photoresist composition having improved photosensitivity, residual film ratio, development contrast, and resolution.

The problems to be solved by the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

According to an aspect of the present invention, there is provided a method of manufacturing a thin film transistor panel, including: forming a conductive layer of a conductive material on a substrate; And forming a conductive film pattern by etching the conductive film using the etching pattern as an etching mask, wherein the photoresist composition comprises a first novolac resin and a second novolak resin represented by the following general formula (1) or (2) A binder resin containing a second novolac resin to be displayed, a light-sensitive agent comprising a diazide compound, and a solvent.

[Chemical Formula 1]

Here, R ₁ to R ₃ are alkyl groups and R ₄ is an alkylene group.

(2)

Here, R ₁ to R ₅ are alkyl groups.

delete

According to another aspect of the present invention, there is provided a photoresist composition comprising a first novolak resin and a second novolak resin represented by the following general formula (1) or (2) A photo-sensitizer including a diazide compound, and a solvent.

[Chemical Formula 1]

Here, R ₁ to R ₃ are alkyl groups and R ₄ is an alkylene group.

(2)

Here, R ₁ to R ₅ are alkyl groups.

The details of other embodiments are included in the detailed description and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. The dimensions and relative sizes of layers and regions in the figures may be exaggerated for clarity of illustration.

It is to be understood that when an element or layer is referred to as being "on" or " on "of another element or layer, All included. On the other hand, a device being referred to as "directly on" or "directly above" indicates that no other device or layer is interposed in between. Like reference numerals refer to like elements throughout the specification. "And / or" include each and every combination of one or more of the mentioned items.

The terms spatially relative, "below", "beneath", "lower", "above", "upper" May be used to readily describe a device or a relationship of components to other devices or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation.

Embodiments described herein will be described with reference to plan views and cross-sectional views, which are ideal schematics of the present invention. Thus, the shape of the illustrations may be modified by manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention are not limited to the specific forms shown, but also include changes in the shapes that are generated according to the manufacturing process. Thus, the regions illustrated in the figures have schematic attributes, and the shapes of the regions illustrated in the figures are intended to illustrate specific types of regions of the elements and are not intended to limit the scope of the invention.

Hereinafter, a method of manufacturing the thin film transistor panel according to the first embodiment of the present invention will be described in detail with reference to FIGS. 1 to 11. FIG.

1 is a layout view of a thin film transistor display panel manufactured by a method according to a first embodiment of the present invention. Fig. 2 is an enlarged view of a portion A in Fig. 3 is a cross-sectional view taken along the line A-A 'in Fig. FIGS. 4 to 11 are cross-sectional views illustrating a method of manufacturing the thin film transistor panel according to the first embodiment of the present invention.

First, referring to FIGS. 1 to 3, a thin film transistor panel manufactured according to the first embodiment of the present invention includes a plurality of pixels arranged in a matrix and a plurality of thin film transistors provided for each pixel. A plurality of gate wirings 22 extending along the pixel boundary are arranged in the row direction of the pixels and a plurality of data wirings 62 extending along the pixel boundary are arranged in the column direction of the pixels. A thin film transistor including a gate electrode 24, a source electrode 65 and a drain electrode 66 is formed in a region where the gate wiring 22 and the data wiring 62 intersect.

The thin film transistor panel according to the present embodiment is an AOC (Array On Color filter) structure in which a color filter 131 is formed on an insulating substrate 10 and a thin film transistor array such as a gate wiring is formed on the color filter 131, A color filter on array (COA) structure in which a color filter 131 is formed on a transistor array, but the structure of the thin film transistor display panel is not limited thereto. Hereinafter, a thin film transistor display panel having an AOC structure will be described as an example.

In the thin film transistor display panel of the AOC structure, a black matrix 121 is formed directly on the insulating substrate 10. In the pixel region between the black matrixes 121, color filters 131 of red, green, and blue are sequentially arranged. On the color filter 131, an overcoat layer 136 may be formed to planarize the stepped portions.

The gate wiring 22 including the gate line 22, the gate electrode 26 and the storage wiring 28, the gate insulating film 30, the semiconductor layer 40, the ohmic contact layers 55 and 56, And a data line including a data line 62, a source electrode 65, and a drain electrode 66 are formed. A protective film 70 having a contact hole 76 is formed on the data line and pixel electrode patterns 84 and 85 are disposed on the protective film 70.

The pixel electrode patterns 84 and 85 may be made of a transparent conductive material, for example, ITO or IZO. The pixel electrode patterns 84 and 85 of the present embodiment are formed of fine slits 85 formed between a plurality of fine electrodes 84 and fine electrodes 84. Specifically, the pixel electrode patterns 84 and 85 of the present embodiment include, for example, a cross-shaped main skeleton that equally divides the pixel region, a plurality of fine electrodes 84 formed by slanting from the main skeleton toward the outer side of the pixel region, And a plurality of fine slits 85 arranged between the plurality of fine electrodes 84. The plurality of fine electrodes 84 formed in the diagonal direction may be formed in four different directions from the center of the pixel region. Accordingly, when driving power is applied to the liquid crystal display device, the liquid crystal (not shown) is oriented in four different directions.

The width of the microelectrode 84 may be the same or different at the center of the pixel electrode patterns 84 and 85, that is, at the point where the microelectrode 84 contacts the cross- If the width of the fine electrode 84 is the same throughout the pixel region, the width w1 of the fine slit 85 may be 2 to 5 mu m. Although not shown, the common electrode panel disposed above the thin film transistor panel of the present embodiment may include a non-patterned common electrode. Therefore, the pixel electrode patterns 84 and 85 adjust the alignment of the liquid crystal (not shown), and when the width w1 of the fine slit 85 exceeds 5 mu m, the response speed of the liquid crystal may be lowered. Also, it may be difficult to adjust the width w1 of the fine slit 85 to less than 2 占 퐉 due to the limitation of the resolution of the exposure machine.

Referring to FIGS. 4 and 11, an insulating substrate 10 is first provided to fabricate a thin film transistor panel.

The insulating substrate 10 may be made of a glass substrate such as soda lime glass or borosilicate glass or plastic such as polyether sulfone and polycarbonate. The insulating substrate 10 may be, for example, a flexible substrate made of polyimide or the like.

The insulating substrate 10 may be of a size corresponding to the unit thin film transistor panel used in one liquid crystal display device, but may be a large substrate on which a plurality of thin film transistor panel plates are manufactured from one insulating substrate 10.

Next, an opaque material such as chromium (Cr) or chromium oxide (CrO _x ) is deposited on the insulating substrate 10 and patterned to form a black matrix 121. A photosensitive resist is applied to the entire surface of the insulating substrate 10 exposed by the black matrix 121 and the black matrix 121 and exposed and developed to form red, green and blue color filters 131 . Then, an overcoat layer 136 is formed on the black matrix 121 and the color filter 131.

4, a conductive film 20 for a gate wiring is stacked on the overcoat layer 136 and then patterned to form a gate electrode 22, a gate electrode 26, and a storage wiring 28 Thereby forming a gate wiring. The photoresist pattern 200 used in forming the gate wiring may be a photoresist composition according to the second embodiment of the present invention. The photoresist composition according to the second embodiment of the present invention will be described later. Here, in order to form the gate wiring including the gate line 22, the gate electrode 26, and the storage wiring 28, the conductive film 20 can be formed by, for example, sputtering have. The photoresist pattern 200 is formed on the conductive film 20 and the conductive film 20 is subjected to wet etching or dry etching using the conductive film 20 as an etching mask to perform patterning do. In the case of wet etching, an etchant such as phosphoric acid, nitric acid or acetic acid can be used.

The gate wiring may be formed of a metal of a series type such as aluminum (Al) and an aluminum alloy, a copper type metal such as copper (Cu) and a copper alloy, molybdenum (Mo) (Cr), titanium (Ti), tantalum (Ta), or the like. Further, the gate wiring may have a multi-film structure including two conductive films (not shown) having different physical properties. One of the conductive films is made of a metal having a low resistivity, for example, an aluminum-based metal, a silver-based metal, a copper-based metal, or the like so as to reduce signal delay and voltage drop of the gate wiring. Alternatively, the other conductive film may be made of a material having excellent contact properties with other materials, particularly zinc oxide (ZnO), indium tin oxide (ITO), or indium zinc oxide (IZO), such as molybdenum metal, chromium, titanium, tantalum and the like. A good example of such a combination is a chromium bottom film, an aluminum top film, an aluminum bottom film and a molybdenum top film. However, the present invention is not limited thereto, and the gate wiring may be formed of various metals and conductors.

5, a gate insulating film 30 made of silicon nitride (SiNx), silicon oxide, or the like is formed on the insulating substrate 10 and the gate wiring by a chemical vapor deposition method or a sputtering method.

6, an active layer 40 is formed by depositing hydrogenated amorphous silicon, polycrystalline silicon, or the like on the gate insulating film 30 by, for example, chemical vapor deposition or sputtering. Thereafter, the amorphous silicon layer 50 is formed on the active layer 40 by, for example, chemical vapor deposition or sputtering, by stacking silicide or n + hydrogenated amorphous silicon doped with a high concentration of n-type impurity

Thereafter, a photoresist pattern 200 is formed on the active layer 40 and the ohmic layer 50, and the active layer 40 and the ohmic layer 50 are patterned using the photoresist pattern 200 as an etch mask. Thereby, an active layer pattern (see 44 in FIG. 7) and an ohmic layer pattern (see 54 in FIG. 7) are formed. In the active layer pattern 44, 'active' means an active material having electrical characteristics when a driving current is applied, and includes both semiconductors and metal oxides.

Etching to be used for forming the active layer pattern 44 and the ohmic layer pattern 54 may use a separate wet etching or dry etching, respectively. In the case of wet etching, an etching solution obtained by mixing deionized water with hydrofluoric acid (HF), sulfuric acid, hydrochloric acid, or a combination thereof can be used. For dry etching, fluorine-based etching gases such as CHF ₃ , CF ₄ and the like can be used. Specifically, etching gas containing Ar or He can be used as the fluorine-based etching gas.

Referring to FIGS. 7 and 8, Ni, Co, Ti, Ag, Cu, Mo, Al, Be, Nb, Au, Fe, Se, Ta, or the like is formed by using a chemical vapor deposition method or a sputtering method A conductive film 60 for a data wiring composed of a single film or a multi-film is deposited.

Al / Ti, Al / Ta, Ti / Al / TiN, Ta / Al, Ta / Al, Ni / Al, Co / Al, Mo A triple film such as Ta / Al / TaN, Ni / Al / Ni, Co / Al / Subsequently, a photoresist pattern 200 is formed on the data wiring conductive film 60 and the data wiring conductive films 60 are etched using the photoresist pattern 200 as an etching mask to form the data wirings 62, 65, 66 are formed. This etching can be performed by wet etching or dry etching. In the case of wet etching, an etchant such as a mixed solution of phosphoric acid, nitric acid and acetic acid, a mixed solution of hydrofluoric acid (HF) and deionized water may be used. At this time, the ohmic layer pattern 54 is etched and separated using the photoresist pattern 200 for etching the data wiring conductive film 60. Thereby, the ohmic contact layer patterns 55 and 56 are formed so as to overlap with the source electrode 65 and the drain electrode 66, respectively.

The data lines 62, 65 and 66 are formed in the vertical direction to intersect the gate lines 22 to define pixels and data lines 62 extending from the data lines 62 in the form of a branch A source electrode 65 which is branched and extends to the top of the active layer pattern 44 and a source electrode 65 which is separated from the source electrode 65 and faces the source electrode 65 about the channel portion of the gate electrode 26 or the thin- And a drain electrode 66 formed on the active layer pattern 44 so as to cover the active layer pattern 44.

9, a protective film 70 is formed on the active layer pattern 4 and the data lines 62, 65, 66, Next, a photoresist pattern 200 is formed on the passivation layer 70, and a contact hole 76 exposing the drain electrode 66 is formed through an etching process using the photoresist pattern 200.

Next, referring to FIG. 10, a conductive film 80 for a pixel electrode made of a transparent conductor such as ITO, IZO, or the like or a reflective conductor is formed. The conductive film 80 for the pixel electrode can be deposited using, for example, sputtering.

11, a photoresist composition can be applied onto the conductive film 80 for a pixel electrode by using a spray method, a roll coater method, a spin coating method, or the like.

The coated photoresist composition is then removed from the solvent contained in the soft bake photoresist composition at a temperature of 105 DEG C for 1 to 5 minutes. As a result, a photoresist film is formed. Thereafter, the photoresist film is irradiated with ultraviolet rays having a wavelength of 365 nm to 435 nm so that the photoresist film has a predetermined pattern shape. Thereafter, the substrate 10 on which the photoresist film is formed is immersed in a developing solution to remove a portion irradiated with ultraviolet rays to form a predetermined photoresist pattern.

At this time, the developing solution is an aqueous solution of an alkali, for example, inorganic alkalis such as sodium hydroxide, potassium hydroxide, and sodium carbonate; Primary amines such as ethylamine and n-propylamine; Secondary amines such as diethylamine and n-propylamine; Tertiary amines such as trimethylamine, methyldiethylamine, dimethylethylamine and triethylamine; Alcohol amines such as dimethylethanolamine, methyldiethanolamine and triethanolamine; Or an aqueous solution of a quaternary ammonium salt such as tetramethylammonium hydroxide or tetraethylammonium hydroxide.

Referring to FIG. 11, the photoresist film may be cleaned with ultrapure water for 30 to 90 seconds to completely remove unnecessary portions, followed by drying to form the etching pattern 200.

The photoresist composition used in the production of the thin film transistor panel of this embodiment is prepared by mixing a first novolac resin and a binder resin containing a second novolak resin represented by the general formula (1) or (2) Solvents and solvents.

 [Chemical Formula 1]

Here, R ₁ to R ₃ are alkyl groups and R ₄ is an alkylene group.

(2)

Here, R ₁ to R ₅ are alkyl groups. The coating thickness d1 of the etching pattern 200 having the above composition may be 1 to 2 占 퐉. If the coating thickness d1 of the etching pattern 200 exceeds 2 mu m, the exposure amount and developing time may increase, and the pattern shape may have a reverse taper. That is, the pattern profile of the etching pattern 200 may be degraded. As a result, it may be difficult to manufacture fine line widths and the like. In addition, the exposure amount may be increased and the photosensitizing speed may be lowered. Thereby, the resolution of the etching pattern 200 can be lowered, and the processing time can be increased. If the coating thickness d1 of the etching pattern 200 is less than 1 mu m, a portion not coated with the photoresist composition may be formed, which may cause a defective patterning. In other words, the residual film ratio is lowered and can be etched to a portion which should not be etched by the etching pattern 200.

2 and 3, pixel electrode patterns 84 and 85 are formed by etching the conductive film 80 for a pixel electrode using the etching pattern 200 as an etching mask.

By using the photoresist composition of the second embodiment, which will be described later, in which the photosensitivity, the residual film ratio, the adhesion to the substrate, the uniformity of the circuit line width, and the like are improved in the first embodiment, The pixel electrode patterns 84 and 85 can be formed.

After the pixel electrode patterns 84 and 85 are formed, the etching pattern 200 is removed using a stripper. Thus, the thin film transistor display panel is completed according to the first embodiment of the present invention.

Hereinafter, the photoresist composition according to the second embodiment of the present invention will be described.

The photoresist composition of the second embodiment comprises a first novolak resin, a binder resin containing a second novolac resin represented by the general formula (1) or (2), a light-sensitive agent comprising a diazide compound, and a solvent do.

[Chemical Formula 1]

Here, R ₁ to R ₃ are alkyl groups and R ₄ is an alkylene group.

(2)

Here, R ₁ to R ₅ are alkyl groups.

First, the binder resin contained in the photoresist composition according to the second embodiment of the present invention will be described. The binder resin includes a first novolac resin and a second novolak resin represented by the general formula (1) or (2).

The first novolak resin is a polymer prepared by reacting formaldehyde with an aromatic alcohol such as metacresol and paracresol. The weight average molecular weight of the first novolac resin measured by GPC (Gel Permeation Chromatography) in terms of monodispersed polystyrene is preferably 2,000 to 10,000. If the average molecular weight is less than 2,000, the viscosity required for the photoresist composition is not satisfied. If the average molecular weight is more than 10,000, the viscosity is increased but it becomes difficult to uniformly coat the photoresist composition, which may lead to failure of the photoresist pattern.

The content ratio of metacresol and paracresol constituting the first novolak resin is preferably 30 to 70: 70 to 30 parts by weight. When the content of the metacresol exceeds the above range, the photosensitive rate is increased and the residual film rate is lowered. When the content of the para-cresol exceeds the above range, the photosensitive rate slows down.

The second novolak resin is represented by the formula (1) or (2).

[Chemical Formula 1]

Here, R 1 to R ₃ are alkyl groups and R ₄ is an alkylene group.

(2)

Here, R ₁ to R ₅ are alkyl groups.

The second novolak resin is a polymer polymer synthesized by reacting metacresol, paracresol, and xylenol. Alternatively, the second novolak resin is a polymer polymer synthesized by reacting metacresol, paracresol, trimethylphenyl or the like.

The weight average molecular weight of the second novolak resin measured by GPC (Gel Permeation Chromatography) in terms of monodispersed polystyrene is preferably 2,000 to 10,000. If the average molecular weight exceeds the above range, the viscosity becomes smaller or larger than necessary, which is not preferable in terms of uniformity of pattern and pattern profile.

The properties of the second novolak resin vary depending on the content ratio of metacresol, paracresol, and xylenol, or metacresol, paracresol, and trimethylphenyl. Specifically, the content ratio of metacresol, paracresol, and xylenol or metacresol, paracresol, and trimethylphenyl is preferably 30 to 70:70 to 30: 1 to 40 parts by weight. When the content of metacresol exceeds the above range, the rate of photosensitization increases and the residual film ratio decreases. When the content of paracresol exceeds the above range, the photosensitizing rate becomes slow and the content of xylenol or trimethylphenyl is in the above range , The residual film ratio may be lowered.

The mixing ratio of the first novolak resin and the second novolac resin contained in the binder resin is 1 to 80:99 to 20. If it exceeds the above range, it can not function in any part of the photosensitivity, the pattern profile of the photoresist and the resolving power.

The content of the binder resin in the photoresist composition according to the second embodiment is 5 to 30% by weight. If the content of the binder resin is less than 5% by weight, the rate at which the photoresist composition is dissolved by the developer during the development process after the exposure is accelerated, and the residual film ratio of the finally formed thin film pattern may be lowered. If the content of the binder resin exceeds 30% by weight, the rate at which the photoresist composition is dissolved by the developer during the developing step which proceeds after exposure may become slow. As a result, an appropriate sensitivity to the exposure energy can not be obtained, the exposure time is lengthened, and the time for forming the thin film pattern as a whole may become longer.

Next, a photosensitizer containing a diazide compound included in the photoresist composition according to the second embodiment of the present invention will be described.

The photosensitizer is 2,3,4-trihydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate and 2,3,4,4'-tetrahydroxybenzophenone-1,2- Naphthoquinonediazide-5-sulfonate, and a compound represented by the formula (3). Wherein the mixing ratio is from 30 to 70: 70 to 30.

(3)

Wherein R ₁ to R ₄ are 2-diazo-1-naphthol-5-sulfonyl or hydrogen, and R ₅ to R ₈ are an alkyl group or a benzyl group.

If the mixing ratio exceeds the above range, an improved effect may not be obtained in terms of the speed of light and resolution. The photosensitizer can determine the taper angle of the photoresist pattern or the quality of the pattern profile.

The content of the photosensitizer contained in the photoresist composition according to the second embodiment is 2 to 10% by weight. If the content of the photosensitizer is less than 2% by weight, the photoresist tends to be photographed even with a small exposure energy, and it may be difficult to form a thin film pattern in a desired exposure energy band. If the content of the photosensitizer is more than 10% by weight, it is difficult to form a pattern in a desired exposure energy band because a large amount of energy is absorbed by the light source.

Next, the solvent included in the photoresist composition according to the second embodiment of the present invention will be described.

The solvent should dissolve the binder resin and the photosensitizer. The solvent according to the second embodiment is selected from propylene glycol methyl ether acetate (PGMEA), ethyl lactate (EL), ethylcellosolve acetate (ECA), 2-methoxyethyl acetate, gamma butyrolactone (GBL) At least one selected from the group consisting of propionate (MMP), ethyl beta-ethoxypropionate (EEP), propylene glycol monomethyl ether (PGME), normal propylacetate (nPAC) and n-butyl acetate (nBA). The content of the solvent is the balance remaining in the entire photoresist composition including the binder resin and the photosensitive agent.

Meanwhile, the photoresist composition according to the second embodiment may further include at least one additive selected from the group consisting of a colorant, a dye, an anti-chipping agent, a plasticizer, an adhesion promoter, a speed enhancer and a surfactant. Thus, performance can be improved in accordance with the characteristics of individual processes.

Hereinafter, the photoresist composition according to the second embodiment will be described in more detail with reference to specific experimental examples. However, the technical idea of the present invention is not limited by the following experimental examples.

(Example 1)

Mixing a first novolac resin having a weight ratio of 4: 6 of metacresol: paracresol as a binder resin and 30: 70 parts of a second novolak resin having a weight ratio of metacresol: paracresol: trimethylphenyl of 4: 4: 2 , 20 g of bis [4-hydroxy-3- (2-hydroxyphenyl) -1,2-naphthoquinonediazide-5-sulfonate, -5-methylbenzyl) -5-dimethylphenyl] methane-1,2-naphthoquinonediazide-5-sulfonate were mixed in a ratio of 50:50, and 70 g of propylene glycol methyl ether acetate (PGMEA) To prepare a photoresist composition.

(Example 2)

Mixing a first novolac resin having a weight ratio of 4: 6 of metacresol: paracresol as a binder resin and 30: 70 parts of a second novolak resin having a weight ratio of metacresol: paracresol: trimethylphenyl of 4: 4: 2 , 20 g of bis [4-hydroxy-3- (2-hydroxyphenyl) -1,2-naphthoquinonediazide-5-sulfonate, -5-methylbenzyl) -5-dimethylphenyl] methane-1,2-naphthoquinonediazide-5-sulfonate were mixed in a ratio of 50:50, and 70 g of propylene glycol methyl ether acetate (PGMEA) To prepare a photoresist composition.

(Bar curator)

20 g of a novolak resin having a weight ratio of 4: 6 of metacresol to paracresol as a binder resin, 20 g of 2,3,4-trihydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate 4 g of 2,3,4,4'-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate in 50:50 parts by weight, 60 g of propylene glycol methyl ether acetate (PGMEA) Were uniformly mixed to prepare a photoresist composition.

(Experimental Example)

The photoresist compositions prepared in Examples 1 and 2 and Comparative Example 1 were spin-coated on a glass substrate at a constant speed. Subsequently, it was dried under reduced pressure at 0.1 Torr or less for 60 seconds. Subsequently, the glass substrate coated with the photoresist composition was soft baked at 105 DEG C for 90 seconds to form a 1.50 mu m thick photoresist film. Subsequently, the uniformity of the photoresist film was measured. Subsequently, ultraviolet rays having a wavelength of 365 nm to 435 nm were exposed to the photoresist film using an exposure machine. Subsequently, the photoresist film was developed for 70 seconds at room temperature with an aqueous solution containing tetramethylammonium hydroxide to form a photoresist pattern.

1) Residual film ratio

Thickness of the initial photoresist film = (thickness of the lost photoresist film) + (thickness of the remaining photoresist film)

Remaining film ratio = (thickness of remaining photoresist film / thickness of initial photoresist film)

The photosensitivity was obtained by measuring the energy at which the photoresist film completely melted under a constant developing condition according to the exposure energy. The residual film ratios were obtained by measuring the thickness of the photoresist film before and after the developing process of the above-described experimental example.

2) Taper angle and pattern profile

After forming the photoresist pattern as described above, the taper angle and the pattern profile of the formed photoresist pattern were measured using a scanning electron microscope (SEM).

The results of the measurement according to the experimental examples are shown in Table 1 below.

[Table 1]

division Sensitivity rate ( mJ / Cm2) Residual film ratio (%) Taper  Angle (°) Pattern profile Example 1 8 98 30 ◎ Example 2 8 98 40 ◎ Comparative Example 14 94 15 X

Note) In Table 1,

⊚ indicates excellent pattern profile, and X indicates pattern profile failure.

Referring to Table 1 and FIGS. 12 to 14, the photoresist compositions according to Examples 1 and 2 have higher taper angles and superior pattern profiles than the photoresist compositions according to Comparative Examples. The higher the taper angle of the photoresist pattern and the better the pattern profile, the larger the margin in the process. Therefore, the pattern of the desired shape can be easily realized by the photoresist pattern. Also, since the speed of the photosensitive layer is high, the processing time can be shortened.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, You will understand. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive.

1 is a layout view of a thin film transistor display panel manufactured by a method according to a first embodiment of the present invention.

Fig. 2 is an enlarged view of a portion A in Fig.

3 is a cross-sectional view taken along the line A-A 'in Fig.

FIGS. 4 to 11 are cross-sectional views illustrating a method of manufacturing the thin film transistor panel according to the first embodiment of the present invention.

Fig. 12 shows a photoresist pattern formed from the photoresist composition according to Example 1. Fig.

Fig. 13 shows a photoresist pattern formed from the photoresist composition according to Example 2. Fig.

14 shows a photoresist pattern formed from a photoresist composition according to a comparative example.

DESCRIPTION OF THE REFERENCE NUMERALS (S)

10: insulating substrate 22: gate line

26: gate electrode 28: storage wiring

30: Gate insulating film 40: Semiconductor layer

55, 56: ohmic contact layer 62: data line

65: source electrode 66: drain electrode

70: Protective layer 76: Contact hole

84: fine electrode 85: fine slit

121: Black Matrix 131: Color filter

136: overcoat layer 200: etch pattern

Claims (16)

Forming a conductive film made of a conductive material on a substrate; Forming an etching pattern of a photoresist composition on the conductive film; And Forming a conductive film pattern by etching the conductive film using the etching pattern as an etching mask, The photoresist composition, A first novolac resin having a weight average molecular weight of 2,000 to 10,000 as measured by gel permeation chromatography in terms of polystyrene and a second novolak resin having a weight average molecular weight of 2,000 to 10,000 as measured by gel permeation chromatography as measured by gel permeation chromatography, A binder resin containing a second novolac resin having a weight-average molecular weight of 10,000, a photo-sensitizer containing a diazide compound, and a solvent. [Chemical Formula 1]

Here, R ₁ to R ₃ are alkyl groups and R ₄ is an alkylene group. (2)

Here, R ₁ to R ₅ are alkyl groups. The method according to claim 1, Wherein the coating thickness of the etching pattern is 1 to 2 占 퐉. The method according to claim 1, Wherein the conductive film pattern is a pixel electrode pattern made of a transparent conductive material. The method of claim 3, Wherein the pixel electrode pattern comprises a plurality of fine electrodes and a plurality of fine slits formed between the fine electrodes. 5. The method of claim 4, And the width of the fine slit is 2 to 5 占 퐉. The method according to claim 1, Wherein the conductive film pattern is a gate wiring or a data wiring. A first novolac resin having a weight average molecular weight of 2,000 to 10,000 as measured by gel permeation chromatography in terms of polystyrene and a second novolak resin having a weight average molecular weight of 2,000 to 10,000 as measured by gel permeation chromatography as measured by gel permeation chromatography, A binder resin containing a second novolac resin having a weight-average molecular weight of 10,000; A light-sensitive agent comprising a diazide compound; And menstruum; ≪ / RTI > [Chemical Formula 1]

Here, R ₁ to R ₃ are alkyl groups and R ₄ is an alkylene group. (2)

Here, R ₁ to R ₅ are alkyl groups. 8. The method of claim 7, 5 to 30% by weight of the binder resin; 2% to 10% by weight of the photosensitive agent; And And a solvent remaining amount. 8. The method of claim 7, Wherein the first novolak resin comprises metacresol and paracresol, wherein the content ratio of metacresol to paracresol is 30 to 70: 70 to 30 parts by weight. 10. The method of claim 9, Wherein the second novolac resin represented by Formula 1 comprises metacresol, paracresol, and xylenol, wherein the content ratio of metacresol, paracresol, and xylenol is 30 to 70:70 to 30: 1 to 40 parts by weight. 11. The method of claim 10, Wherein the mixing ratio of the first novolak resin to the second novolac resin is 1 to 80:99 to 20 parts by weight. 10. The method of claim 9, Wherein the second novolac resin represented by Formula 2 includes metacresol, paracresol, and trimethylphenyl, wherein the content ratio of metacresol, paracresol, and trimethylphenyl is 30 to 70: 70 to 30: 40 parts by weight. 13. The method of claim 12, Wherein the mixing ratio of the first novolak resin to the second novolac resin is 1 to 80:99 to 20 parts by weight. 8. The method of claim 7, The photosensitizer is preferably selected from the group consisting of 2,3,4-trihydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate and 2,3,4,4'-tetrahydroxybenzophenone- -Naphthoquinonediazide-5-sulfonate and a compound represented by the following formula (3), wherein the mixing ratio is 30 to 70: 70 to 30 parts by weight. (3)

Wherein R ₁ to R ₄ are 2-diazo-1-naphthol-5-sulfonyl or hydrogen, and R ₅ to R ₈ are an alkyl group or a benzyl group. 8. The method of claim 7, The solvent may be selected from the group consisting of propylene glycol methyl ether acetate (PGMEA), ethyl lactate (EL), ethylcellosolve acetate (ECA), 2-methoxyethyl acetate, gamma butyrolactone (GBL), methylmethoxypropionate ), Ethyl beta-ethoxypropionate (EEP), propylene glycol monomethyl ether (PGME), normal propyl acetate (nPAC), and n-butyl acetate (nBA). 8. The method of claim 7, Wherein the photoresist composition further comprises at least one additive selected from the group consisting of a colorant, a dye, an anti-chipping agent, a plasticizer, an adhesion promoter, a speed enhancer, and a surfactant.

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