KR20060088962A - Photoresist composition, method for manufacturing a pattern using the same and method for manufacturing thin film transistor liquid crystal display the same - Google Patents

Abstract

The present invention relates to a photoresist composition comprising 10 to 40% by weight of a novolak resin, 1 to 20% by weight of a high heat resistant additive, 3 to 10% by weight of a photosensitizer and a residual solvent, and a conductive or non-conductive layer on a substrate. Forming a malleable layer, the photoresist composition comprising 10 to 40% by weight of a novolac resin, 1 to 20% by weight of a high heat resistant additive, 3 to 10% by weight of a photosensitizer and a residual solvent Forming a pattern, forming a photoresist pattern by exposing and developing the photoresist composition, and etching the layer using the photoresist pattern, and a method of manufacturing a thin film transistor display device. to provide.

Photoresist composition, hard bake, high heat resistance, novolac resin

Description

Photoresist composition, a method of forming a pattern using the photoresist composition and a method of manufacturing a thin film transistor array panel {Photoresist composition, method for manufacturing a pattern using the same and method for manufacturing thin film transistor liquid crystal display the same}

1 is a layout view of a thin film transistor array panel according to an exemplary embodiment of the present invention.

FIG. 2 is a cross-sectional view of the thin film transistor array panel of FIG. 1 taken along line II-II ',

3 to 11B are layout views or cross-sectional views sequentially illustrating a method of manufacturing a thin film transistor array panel according to an exemplary embodiment of the present invention.

* Explanation of symbols for main parts of the drawings

42: photoresist 42a: photoresist pattern

52: mask 110: insulating substrate

120: metal layer 121: gate line

124: gate electrode 131: sustain electrode line

140: gate insulating film 150: intrinsic amorphous silicon layer

160: impurity amorphous silicon layer 171: data line

173: source electrode 175: drain electrode

180: protective film 82: contact assistant member

185 and 182: contact hole 190: pixel electrode

The present invention relates to a photoresist composition, a method of forming a pattern using the photoresist composition, and a method of manufacturing a thin film transistor array panel.

Liquid Crystal Display (Liquid Crystal Display) is one of the most widely used flat panel display (Plat Panel Display), which consists of two display panels on which electrodes are formed and a liquid crystal layer inserted between them, The display device is applied to rearrange the liquid crystal molecules of the liquid crystal layer to control the amount of light transmitted.

Among the liquid crystal display devices, the one currently used is a structure in which a field generating electrode is provided in each of the two display panels. Among these, a structure in which a plurality of pixel electrodes are arranged in a matrix form on one display panel, and one common electrode on the entire display panel covers the other display panel. The display of an image in such a liquid crystal display is performed by applying a separate voltage to each pixel electrode. To this end, a thin film transistor, which is a three-terminal element for switching a voltage applied to a pixel electrode, is connected to each pixel electrode, and a gate line transferring a signal for controlling the thin film transistor and a data line transferring a voltage to be applied to the pixel electrode. Is formed on a display panel (hereinafter referred to as a 'thin film transistor display panel'). The thin film transistor serves as a switching element that transfers or blocks an image signal transmitted through a data line to a pixel electrode according to a scan signal transmitted through a gate line. Such a thin film transistor also serves as a switching element for individually controlling each light emitting element in an active organic light emitting diode (AM-OLED) which is a self-luminous element.

A display device such as a liquid crystal display or an organic light emitting display device includes a conductive or nonconductive pattern. This pattern is generally followed by stacking a conductive or nonconductive layer and then applying, exposing, developing, baking and etching the photoresist composition thereon. It is formed by a photolithography process including a process.

However, the photoresist composition used in the photolithography process is weak in heat resistance, and thus, a pattern is deformed or reflowed during a heat treatment step such as a hard bake. In this case, the uniformity of the pattern cannot be secured and a fine circuit pattern cannot be formed.

Accordingly, the present invention is to solve the above problems, and provides a photoresist composition exhibiting high heat resistance, a method of forming a pattern using the composition, and a method of manufacturing a thin film transistor array panel.

The photoresist composition according to the present invention comprises a novolak resin, a high heat resistant additive, a photosensitive agent and a solvent.

In addition, the high heat resistance additive is preferably polyhydroxy styrene.

In addition, the method of forming a pattern according to the present invention comprises the steps of forming a conductive or nonconductive layer on a substrate, 10 to 40% by weight of a novolak resin, 1 to 20% by weight of a high heat resistance additive, 3 to 10 on the layer. Forming a photoresist composition comprising a wt% photosensitive agent and a residual solvent, exposing and developing the photoresist composition to form a photoresist pattern, and etching the layer using the photoresist pattern It includes a step.

In addition, the method of manufacturing a thin film transistor array panel according to the present invention may include forming a gate line including a gate electrode on a substrate, forming a semiconductor layer on the gate line, and a data line including a source electrode on the semiconductor layer. And forming a drain electrode facing the source electrode at a predetermined interval, and forming a pixel electrode connected to the drain electrode, wherein at least one of the steps includes a photolithography step. The etching step includes forming a conductive or nonconductive layer on the substrate, 10 to 40% by weight of novolac resin, 1 to 20% by weight of a high heat resistant additive, 3 to 10% by weight of a photoresist and the remaining amount of Forming a photoresist composition comprising a solvent, exposing and developing the photoresist composition Forming a pattern, and a step of etching the layer using the photoresist pattern.

Hereinafter, the photoresist composition according to the present invention will be described in detail.

As mentioned above, the photoresist composition according to the present invention comprises a novolak resin, a high heat resistant additive, a photosensitizer and a solvent.

The novolak resin, which is one of the photoresist composition components, is represented by the formula (1).

(Wherein R ₁ to R ₄ are each independently a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, n is an integer of 0 to 3)

The novolak resin can be obtained by reacting a phenol monomer and an aldehyde compound in the presence of an acid catalyst.

Phenolic monomers are, for example, phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, m-ethylphenol, p-ethylphenol, o-butylphenol, m-butylphenol, p-butylphenol, 2 , 3-xylene, 2,4-xylene, 2,5-xylene, 2,6-xylene, 3,4-xylene, 3,5-xylene, 3,6-xylene, 2,3,5-trimethylphenol, 3,4,5-trimethylphenol, p-phenylphenol, resorcinol, hydroquinone, hydroquinone monomethyl ether, pyrogarol, chloroglucinol, hydroxydiphenyl, bisphenol-A, gallic acid, α- One or two or more compounds selected from naphthol and β-naphthol can be used in combination.

In addition, an aldehyde compound can be used individually or in mixture of 2 or more types of formaldehyde, p-formaldehyde, a peripheral, benzaldehyde, nitrobenzaldehyde, acetaldehyde, etc.

In addition, the acid catalyst added during the reaction of the phenol compound and the aldehyde compound may be selected from, for example, hydrochloric acid, nitric acid, sulfuric acid, formic acid or oxalic acid.

The novolak resin is preferably included in an amount of 10 to 40% by weight based on the total content of the photoresist composition.

The photoresist composition includes poly hydroxy styrene (poly hydroxy stylene) represented by Formula 2 as a high heat resistant additive having a high glass transition temperature (Tg).

Polyhydroxy styrene can secure heat resistance of 20 to 30 ℃ or more compared to the conventional photoresist by adjusting the molecular weight and the distribution of molecular weight. In particular, the polyhydroxy styrene is similar to the novolak resin because the chemical structure is excellent in compatibility when contained in an appropriate ratio, it is possible to control the glass transition temperature by changing the molecular weight or molecular structure.

In the present invention, in order to improve heat resistance, it is preferable to include polyhydroxy styrene having a weight average molecular weight of about 5,000 to 10,000. It is also desirable to include polyhydroxy styrenes having a uniform molecular weight distribution of about 1.0 to 2.0.

The high heat resistance additive is preferably contained in an amount of 1 to 20% by weight based on the total content of the photoresist composition. When the high heat resistance additive is contained in less than 1% by weight does not exhibit the effect of improving the heat resistance characteristics, when it exceeds 20% by weight compatibility with novolak resin may be a problem. In particular, when contained in 5 to 10% by weight, it is most effective in terms of improving heat resistance characteristics and compatibility with novolak resin.

The photosensitizer, which is one component of the photoresist composition, is not particularly limited as long as it is a compound that generally reacts with light in the exposure process to cause a photo-chemical reaction. Preferably, the compound may be selected from the compounds represented by the following Chemical Formulas 3 to 10.

In Formulas 3 to 10, R and R 'are independently of each other a hydrogen atom, 2,1-diazonaphtoquinone-4-sulfonic ester or 2,1-diazona 2,1-diazonaphtoquinone-5-sulfonic ester, R ₁ to R ₅ independently of one another are hydrogen atoms, alkyl groups having 1 to 6 carbon atoms, 1 to 6 carbons An alkoxy group having an atom or a cycloalkyl group having 4 to 10 carbon atoms, R ₆ , R ₈ , R ₁₀ and R ₁₂ are each independently a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, and R ₇ , R ₉ , R ₁₁ and R ₁₃ are each independently a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms or a cyclo alkyl group having 4 to 10 carbon atoms.

The photosensitizer is preferably contained in an amount of 3 to 10% by weight based on the total content of the photoresist. This is because, when the photosensitive agent is contained in less than 3% by weight, the exposure rate is decreased during exposure, and when the photosensitive agent is contained in an amount exceeding 10% by weight, the response rate is rapidly increased. Therefore, it is preferable to contain 3 to 10% by weight in order to maintain an appropriate response rate.

In addition, the photoresist composition according to the present invention may further include a silicone-based compound containing an epoxy group or an amine group as an additive. Examples of the silicone compound include (3-glycidoxypropyl) trimethoxysilane, (3-glycidoxyoxy) triethoxysilane, (3-glycidoxypropyl) methyldimethoxysilane, and (3-glycid). Oxypropyl) methyldiethoxysilane, (3-glycidoxypropyl) dimethylmethoxysilane, (3-glycidoxyoxy) dimethylethoxysilane, 3,4-epoxybutyltrimethoxysilane, 3,4-epoxy Butyltriethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 2- (3,4epoxycyclohexyl) ethyltriethoxysilane and aminopropyl trimethoxysilane.

In addition, the photoresist composition may further include other additives such as plasticizers, stabilizers or surfactants, as desired.

Novolac resins, polyhydroxy styrenes, photosensitizers and various additives are used in the form of solutions dissolved in organic solvents. As an organic solvent, for example, ethyl acetate, butyl acetate, diethylene glycol dimethyl ether, diethylene glycol dimethyl ethyl ether, methyl methoxy propionic acid, ethyl ethoxy propionic acid, ethyl lactic acid, propylene glycol methyl ether acetate, propylene glycol methyl ether, propylene Glycolpropyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol methyl acetate, diethylene glycol ethyl acetate, acetone, methyl isobutyl ketone, cyclohexanone, dimethylformamide (DMF), N, N- Dimethylacetamide (DMAc), N-methyl-2-pyrrolidone, γ-butylolactone, diethyl ether, ethylene glycol dimethyl ether, diglyme, tetrahydrofuran, methanol, ethanol, propanol, isopropanol, methylcello Solve, ethyl cellosolve, diethylene glycol methyl ether, diethylene glycol ethyl ether, dipropylene glycol Ether, toluene, and may be selected from toluene, xylene, hexane, heptane, octane.

Hereinafter, exemplary embodiments of the present invention will be described in detail so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

Example 1

In this embodiment, when the photoresist composition according to the present invention is applied, heat resistance was evaluated according to the degree of reflow phenomenon of the photoresist.

Preparation of Photoresist Composition

First, a novolak resin is obtained by condensation polymerization of a cresol mixture (Mw = 15,000) and a formaldehyde compound containing m-cresol and p-cresol in a weight ratio of 40/60 in the presence of oxalic acid as an acid catalyst. Got it.

Then, 30% by weight of the novolak resin obtained above, 8% by weight of the photosensitizer represented by the formula (9), and molecular weight of 6000 or 8000, polyhydroxy having a content of 0 to 25% by weight according to each embodiment Styrene was dissolved in dimethylformamide (DMF).

The composition ratio of each composition prepared above is shown in Table 1 below.

Photo process

Each photoresist composition prepared above was used to form a photoresist pattern. For each photoresist composition, the other conditions in the process were all set the same.

First, each photoresist composition prepared above was coated on a substrate made of glass or the like by a spin coating method. The photoresist film was then pre-baked for 90 seconds at a temperature of about 100-110 ° C.

Then, the photoresist film was exposed using an exposure machine, and then developed in a paddle manner to remove the photoresist in the exposed area.

Then, the substrate was placed in an oven, and a hard bake was performed at about 120 ° C. to check whether reflow occurred.

Subsequently, the hard bake was performed at 130 degreeC with respect to the board | substrate which did not generate | occur | produce among the said board | substrates, and it was confirmed whether the reflow generate | occur | produced.

In addition, a hard bake was performed at 140 ° C on the substrates without reflow, and it was confirmed whether reflow occurred.

The results are shown in Table 1.

      (Double-circle): Good reflow of photoresist when hard-baking at 140 degreeC

  (Circle): Good reflow of photoresist when hard-baking at 130 degreeC

  (Triangle | delta): Reflow of a photoresist is favorable when hard baking is performed at 120 degreeC.

●: very good

▲: excellent

X: bad

As shown in Table 1, it can be seen that in the case of containing polyhydroxy styrene in the photoresist composition, the heat resistance characteristics are improved compared to the case of using the conventional novolak resin alone. However, when about 20% by weight or more of polyhydroxystyrene is contained, some particles which cannot be dissolved due to problems in compatibility of novolak resin and styrene are included. Accordingly, there is a problem in that uniformity of coating is lowered.

Example 2

In the present embodiment, a method of manufacturing a thin film transistor array panel using a photoresist composition according to an embodiment of the present invention will be described.

1 is a layout view of a thin film transistor array panel according to another exemplary embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along the line II-II ′ of FIG. 1.

As shown in FIGS. 1 and 2, a plurality of gate lines 121 are formed on the insulating substrate 110 to transfer gate signals. The gate line 121 extends in the horizontal direction, and a part of each gate line 121 forms a plurality of gate electrodes 124. In addition, a plurality of storage electrode lines 131 electrically separated from the gate line 121 are formed on the same layer as the gate line 121.

The gate line 121 is formed on the lower metal layers 124p and 127p made of aluminum (Al) or aluminum alloy (AlNd) in which a predetermined amount of neodymium (Nd) is added, and on the lower metal layers 124p and 127p. The upper metal layers 124q and 127q made of molybdenum (Mo) are formed.

Side surfaces of the lower metal layers 124p and 127p and the upper metal layers 124q and 127q are inclined, respectively, and the inclination angle is about 30 to 80 degrees with respect to the surface of the substrate 110.

A gate insulating layer 140 made of silicon nitride (SiNx) or the like is formed on the gate line 121 and the storage electrode line 131 including the gate electrode 124.

A plurality of linear semiconductor layers 151 made of hydrogenated amorphous silicon or the like are formed on the gate insulating layer 140. The linear semiconductor layer 151 extends in the vertical direction, from which a plurality of extensions 154 extend toward the gate electrode 124. The linear semiconductor layer 151 has a planar shape substantially the same as the upper data line 171, the drain electrode 175, and the ohmic contact layers 163 and 165 except the protrusion 154 where the thin film transistor is located. Have

On the upper part of the semiconductor layer 151, a linear ohmic contact 161 made of a material such as n + hydrogenated amorphous silicon doped with a high concentration of silicide or n-type impurities and a plurality of island-type ohmic contacts ( 163 and 165 are formed. The islands of ohmic contact 163 and 165 are paired and positioned on the protrusion 154 of the semiconductor layer 151. Side surfaces of the semiconductor layer 151 and the ohmic contacts 163 and 165 are also inclined, and the inclination angle is 30 to 80 degrees with respect to the substrate 110.

A plurality of data lines 171 and a plurality of drain electrodes each including a source electrode 173 on the ohmic contacts 161, 163, and 165 and the gate insulating layer 140. 175 is formed.

The data line 171 extends in the vertical direction to cross the gate line 121 and transmit a data voltage. A plurality of branches extending from the data line 171 toward the drain electrode 175 forms a source electrode 173. The pair of source and drain electrodes 173 and 175 are separated from each other and positioned opposite to the gate electrode 124.

The data line 171 and the drain electrode 175 including the source electrode 173 may include a first metal layer 171q, 173q, and 175q including aluminum and molybdenum formed under and over the first metal layer. It is formed of a plurality of layers consisting of the second metal layers 171p, 173p, and 175p and the third metal layers 171r, 173r, and 175r. In this way, the aluminum or aluminum alloy layer having a low specific resistance is interposed between the molybdenum alloy layers, so that the aluminum layer interposed between the lower semiconductor layer and the upper pixel electrode is maintained while maintaining the low specific resistance. There is an advantage that can prevent the degradation of the characteristics of the thin film transistor due to poor contact by not contacting directly.

The gate electrode 124, the source electrode 173, and the drain electrode 175 together with the protrusion 154 of the semiconductor 151 form a thin film transistor (TFT), and a channel of the thin film transistor. Is formed in the protrusion 154 between the source electrode 173 and the drain electrode 175.

Similarly to the gate line 121, the data line 171 and the drain electrode 175 are inclined at an angle of about 30 to 80 degrees with respect to the substrate 110, respectively.

On the data line 171 including the source electrode 173, the drain electrode 175, and the exposed semiconductor layer 151, an organic material having excellent planarization characteristics and photosensitivity, and plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition) A passivation layer 180 made of a low dielectric constant insulating material such as a-Si: C: O, a-Si: O: F formed by Vapor Deposition (PECVD), or silicon nitride (SiNx), which is an inorganic material, is formed. It is formed of a single layer or a plurality of layers. For example, when formed of an organic material, a portion of the semiconductor layer 154 between the source electrode 173 and the drain electrode 175 is exposed to prevent the organic material of the passivation layer 180 from contacting the lower portion of the organic layer. An insulating film (not shown) made of silicon nitride (SiNx) or silicon oxide (SiO ₂ ) may be further formed.

The passivation layer 180 is provided with a plurality of contact holes 185 and 182 exposing the drain electrode 175 and the end portion 179 of the data line, respectively.

A plurality of pixel electrodes 190 and a plurality of contact assistants 82 made of ITO or IZO are formed on the passivation layer 180.

The pixel electrode 190 is physically and electrically connected to the drain electrode 175 through the contact holes 185 and 182 to receive a data voltage from the drain electrode 175.

The pixel electrode 190 to which the data voltage is applied rearranges the liquid crystal molecules of the liquid crystal layer by generating an electric field together with a common electrode (not shown) of another display panel (not shown) to which a common voltage is applied. .

The contact auxiliary members 82 are connected to the end portions 179 of the data lines through the contact holes 182, respectively. The contact auxiliary member 82 compensates for and protects the adhesion between the end portion 179 of the data line and an external device such as a driving integrated circuit.

Next, a method of manufacturing the thin film transistor array panel according to the present embodiment will be described in detail with reference to FIGS. 3 to 11B and FIGS. 1 and 2.

First, as shown in FIG. 3, the lower metal layer 120p made of aluminum (Al) or aluminum alloy (Al-alloy) and molybdenum (Mo) or molybdenum alloy (Mo-alloy) on a substrate 110 made of transparent glass. Each upper metal layer 120q is formed by a sputtering method.

Here, the metal layer is formed by co-sputtering. In this embodiment, aluminum-neodymium alloys (AlNd) and molybdenum (Mo) were used as targets for the sputtering of the cavity. Cavity sputtering initially does not apply power to the molybdenum (Mo) target but applies power only to the aluminum alloy target to form a lower metal layer of aluminum alloy on the substrate 110.

Next, after turning off the power applied to the aluminum alloy target (off), the power applied to the molybdenum (Mo) is applied to form an upper metal layer made of molybdenum on the lower metal layer (120p).

Next, as shown in FIG. 4, a photoresist composition including a novolak resin, polyhydroxy styrene, a photosensitive agent, and a solvent is coated on the upper metal layer 120q to spin the photoresist film 42 by a spin coating method. Form.

The photoresist composition comprises 10 to 40% by weight of a novolak resin, 1 to 20% by weight of polyhydroxy styrene, 3 to 10% by weight of a photosensitizer and a residual solvent, in this embodiment, m 30% by weight of a novolak resin obtained by condensation polymerization of cresol mixture (Mw = 15,000) and formaldehyde compound containing cresol and p-cresol in a weight ratio of 40/60 in the presence of oxalic acid as an acid catalyst. Positive photoresist composition prepared by dissolving 8% by weight of the expressed photosensitizer and 10% by weight of polyhydroxy styrene having a molecular weight of 8000 in dimethylformamide (DMF) (No. 9 compound of Example 1) Was used.

4 and 5, the photoresist film 42 is exposed using a mask 52 and then developed to form a photoresist pattern 42a.

Subsequently, the substrate on which the photoresist pattern 42a is formed is placed in an oven and subjected to hard bake at a temperature of about 130 to 140 degrees. Hard bake is performed to harden the tissue released during the development process.

Subsequently, as shown in FIG. 5, the lower metal layer 120p and the upper metal layer 120q of the region except for the portion where the photoresist pattern 42a remains are etched at once. At this time, an etchant containing phosphoric acid (H ₃ PO ₄ ), nitric acid (HNO ₃ ), acetic acid (CH ₃ COOH) and demineralized water in an appropriate ratio is suitable.

Next, the photoresist pattern 42a is removed using a photoresist stripper, thereby as shown in FIGS. 6A and 6B, the gate line 121 including the gate electrode 124 and the gate line 121. A plurality of sustain electrode lines 131 electrically separated from each other are formed.

Next, as shown in FIG. 7, an insulating material such as silicon nitride (SiNx) covering the gate line 121 including the gate electrode 124 and the sustain electrode line 131 is deposited to form the gate insulating layer 140. do. Subsequently, an amorphous silicon (a-Si) layer 150 not doped with impurities and an amorphous silicon (n + a-Si) layer 160 doped with impurities are sequentially stacked on the gate insulating layer 140. The intrinsic amorphous silicon layer 150 is formed of hydrogenated amorphous silicon, and the like, and the doped amorphous silicon layer 160 is made of amorphous silicon or silicide doped with a high concentration of n-type impurities such as phosphorus (P). Form.

Then, on the amorphous silicon layer 160 doped with impurities, a first metal layer 170p including molybdenum, a second metal layer 170q including aluminum, and a third metal layer 170r including molybdenum by sputtering or the like. In order to deposit.

Like the gate line 121, the first metal layer 170p, the second metal layer 170q, and the third metal layer 170r are also formed by cavity sputtering.

Subsequently, a photoresist composition including a novolak resin, polyhydroxy styrene, a photosensitive agent, and a solvent is coated on the third metal layer 170r to form a photoresist film by spin coating.

The photoresist composition comprises 10 to 40% by weight of novolac resin, 1 to 20% by weight of polyhydroxy styrene, 3 to 10% by weight of a photosensitizer and a residual amount of solvent, in this embodiment, m- 30% by weight of a novolak resin obtained by condensation polymerization of cresol mixture (Mw = 15,000) and formaldehyde compound containing cresol and p-cresol in a weight ratio of 40/60 in the presence of oxalic acid as an acid catalyst, Positive photoresist composition (No. 9 compound of Example 1) prepared by dissolving 8% by weight of the prepared photoresist and 10% by weight of polyhydroxy styrene having a molecular weight of 8000 in dimethylformamide (DMF) Was used.

Then, after exposing and developing the photoresist film, a hard bake is performed at about 130 to 140 ° C. to form photoresist patterns 52 and 54 having different thicknesses, as shown in FIG. 8. do.

For convenience of description, the metal layer 170 of the portion where the wiring is to be formed, the amorphous silicon layer 160 doped with impurities, and the portion of the amorphous silicon layer 150 without doping impurities are referred to as the wiring portion A. A portion of the impurity doped amorphous silicon layer 160 and a portion of the amorphous silicon layer 150 which is not doped with impurities is called a channel portion B, and an impurity is doped with impurities located in a region other than the channel and wiring portions. The portion of the amorphous silicon layer 160 and the amorphous silicon layer 150 which is not doped with impurities are referred to as the other portion (C).

 The first portion 54 of the photoresist patterns 52 and 54 positioned in the channel portion B of the thin film transistor is smaller in thickness than the portion positioned in the portion A in which the data line is to be formed. Remove all photoresist. At this time, the ratio of the thickness of the photoresist film 54 remaining in the channel portion B and the thickness of the photoresist film 52 remaining in the portion A should be different depending on the process conditions in the etching process, which will be described later. It is preferable to make the thickness of 54) 1/2 or less of the thickness of the second part 52.

Next, as shown in FIG. 9, by wet etching the metal layer 170 exposed to the other region C using an etching solution, the other portion of the amorphous silicon layer 161 doped with impurities below it ( C) is exposed.

In this case, the upper portion of the intrinsic amorphous silicon layer 154 positioned in the channel portion B may be partially removed to reduce the thickness, and the photosensitive film 52 of the wiring portion A may be etched to some extent at this time.

Next, the amorphous silicon layer 161 doped with impurities located in the other portion C and the intrinsic amorphous silicon layer 151 thereunder are removed, and the photoresist film 54 of the channel portion B is removed to remove the lower portion. The metal layer 174 is exposed.

Removal of the photoresist of the channel portion B may be performed simultaneously with or separately from the removal of the amorphous silicon layer 161 and the intrinsic amorphous silicon layer 151 doped with impurities of the other region C. Residue of the photoresist film 54 remaining in the channel region B is removed by ashing. In this step, the semiconductor layers 151 and 154 are completed.

The metal layer 174 located in the channel portion B and the amorphous silicon layer 164 doped with impurities are then etched away. In addition, the photosensitive film 52 of the remaining wiring portion A is also removed. As a result, each of the metal layers 174 is completed while being separated into one data line 171 including the source electrode 173 and the plurality of drain electrodes 175, and the amorphous silicon layer 164 doped with impurities also has a linear ohmic contact. Completed by dividing the layer 161 and the island resistive contact layer 165.

As such, there may be various methods of varying the thickness of the photoresist layer according to the position. The semi-transparent area as well as the transparent area and the light blocking area may be formed in the exposure mask. For example. The semi-transmissive region includes a slit pattern, a lattice pattern, or a thin film having a medium transmittance or a medium thickness. When using the slit pattern, it is preferable that the width of the slits and the interval between the slits are smaller than the resolution of the exposure machine used for the photographic process. Another example is to use a photoresist film that can be reflowed. That is, a thin portion is formed by forming a reflowable photoresist pattern with a normal mask having only a transparent region and a light shielding region and then reflowing so that the photoresist film flows into an area where no photoresist remains.

Given the appropriate process conditions, the lower layers may be selectively etched due to the difference in thickness of the photoresist patterns 52 and 54.

After a series of etching steps, a photoresist stripper is applied on the photoresist patterns 52 and 54 to remove the photoresist patterns 52 and 54, thereby as shown in FIGS. 10A and 10B, a plurality of source electrodes. A plurality of linear ohmic contacts including a plurality of data lines 171, a plurality of drain electrodes 175, and end portions 179 of the data lines, respectively, including a plurality of protrusions 163. A plurality of linear semiconductor layers 151 including 161, a plurality of island type ohmic contact layers 165, and a plurality of protrusions 154 are formed.

Next, as shown in FIGS. 11A and 11B, the passivation layer 180 is covered to cover the semiconductor layer 154 that is not covered by the data line 171 and the drain electrode 175 including the source electrode 173. Form. In this case, the passivation layer 180 may be formed of a-Si: C: O, a-Si: O: organic material having excellent planarization characteristics, photosensitivity, and plasma enhanced chemical vapor deposition (PECVD). A low dielectric constant insulating material, such as F, or silicon nitride, which is an inorganic material, is formed in a single layer or a plurality of layers to form a passivation layer.

Then, the passivation layer 180 is formed by a photolithography process to form a plurality of contact holes 185 and 182. In this case, in the case of the organic film having photosensitivity, the contact hole may be formed only by a photographic process.

Subsequently, as shown in FIGS. 1 and 2, a transparent conductive material such as ITO or IZO is deposited and etched by a photolithography process using a mask to form one end portion 179 of the data line through the contact holes 185 and 182. ) And a pixel electrode 190 connected to the drain electrode 175 through the contact auxiliary member 82 and the contact hole 185, respectively.

In this embodiment, only one type of photoresist composition manufactured with a specific composition is applied, but is not particularly limited to the composition having the above composition ratio.

Although only the case where the gate line 121 and the data line 171 are formed as the double layer is shown, the same applies to the case of the single layer or the multilayer, and in the present embodiment, the gate line 121 and the data line are the same. Although a metal layer made of molybdenum (Mo) and aluminum (Al) is used as 171, the same may be applied to all conductors applicable to wiring.

In addition, in the present embodiment, the photolithography process using the photoresist composition is shown only in the gate line and data line forming steps, but it is obvious that the photolithography process may be equally applied to the conductive or non-conductive layer requiring the photolithography process.

Although preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of the invention.

As described above, by containing a predetermined amount of polyhydroxy styrene in the photoresist composition, it is possible to improve the heat resistance characteristics than in the case of using conventionally novolak resin alone. As a result, the photoresist pattern may be finely adjusted by performing a hard bake process at a temperature of about 20 to 30 ° C. higher than before.

Claims (22)

A photoresist composition comprising a novolak resin, a high heat resistant additive, a photosensitizer and a solvent. The photoresist composition of claim 1, wherein the photoresist composition comprises 10 to 40 wt% of novolac resin, 1 to 20 wt% of a high heat resistant additive, 3 to 10 wt% of a photosensitizer, and a residual amount of solvent. The photoresist composition of claim 1, wherein the high heat resistant additive is polyhydroxy styrene. The photoresist composition of claim 3, wherein the polyhydroxy styrene has a weight average molecular weight of 5000 to 10,000. The photoresist composition of claim 3, wherein the polyhydroxy styrene has a molecular weight distribution of 1.0 to 2.0. The photoresist composition of claim 1, wherein the novolak resin is represented by Chemical Formula 1. 7. The photoresist composition of claim 1, wherein the photoresist composition further comprises a silicon-based compound including a functional group of at least one of an epoxy group and an amine group. The method of claim 7, wherein the silicone compound is (3-glycidoxypropyl) trimethoxysilane, (3-glycidoxypropyl) triethoxysilane, (3-glycidoxypropyl) methyldimethoxysilane, (3 -Glycidoxy propyl) methyl diethoxysilane, (3- glycidoxy propyl) dimethyl methoxy silane, (3- glycidoxy propyl) dimethyl ethoxy silane, 3, 4- epoxy butyl trimethoxy silane, 3, 4-epoxybutyltriethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 2- (3,4epoxycyclohexyl) ethyltriethoxysilane and aminopropyl trimethoxysilane A photoresist composition comprising at least one kind. Forming a conductive or non-conductive layer over the substrate, Forming a photoresist composition comprising 10 to 40% by weight of a novolak resin, 1 to 20% by weight of a high heat resistant additive, 3 to 10% by weight of a photosensitizer and a residual solvent, Exposing and developing the photoresist composition to form a photoresist pattern, and Etching the layer using the photoresist pattern. The method of claim 9, wherein the high heat resistant additive is polyhydroxy styrene. The method of claim 9, wherein the polyhydroxy styrene has a weight average molecular weight of 5000 to 10,000. The photoresist composition of claim 9, wherein the polyhydroxy styrene has a molecular weight distribution of 1.0 to 2.0. The method of claim 9, wherein the forming of the photoresist pattern comprises hard baking at 120 to 140 ° C. 11. The method of claim 9, wherein the etching of the layer comprises etching portions other than a region where the photoresist pattern is formed. Forming a gate line including a gate electrode on the substrate, Forming a gate insulating film on the gate line; Forming a semiconductor layer on the gate insulating film, Forming a data line including a source electrode on the semiconductor layer and a drain electrode facing the source electrode at a predetermined interval; and Forming a pixel electrode connected to the drain electrode; At least one of each step includes a photo etching step, The photolithography step comprises the steps of forming a conductive or non-conductive layer on the substrate, 10 to 40% by weight of novolac resin, 1 to 20% by weight of a high heat resistance additive, 3 to 10% by weight of a photoresist and Forming a photoresist composition comprising a residual amount of solvent, exposing and developing the photoresist composition to form a photoresist pattern, and etching the layer using the photoresist pattern The manufacturing method of a display panel. The method of claim 15, wherein the high heat resistance additive is polyhydroxy styrene. The method of claim 16, wherein the polyhydroxy styrene has a weight average molecular weight of 5000 to 10,000. The method of claim 16, wherein the polyhydroxy styrene has a molecular weight distribution of 1.0 to 2.0. The same photoresist pattern of claim 15, wherein the semiconductor layer and the data line have a first portion, a second portion thicker than the first portion, and a third portion thinner than the thickness of the first portion. A method of manufacturing a thin film transistor array panel which is photo etched using a film. The method of claim 19, wherein the first portion is formed between the source electrode and the drain electrode, and the second portion is formed above the data line. The method of claim 15, wherein the forming of the photoresist pattern comprises hard baking at 120 to 140 ° C. 17. The method of claim 15, wherein the etching of the layer comprises etching portions other than a region where the photoresist pattern is formed.

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