JP4728264B2 - 発光ダイオードパッケージ、発光ダイオードパッケージ用回路基板およびその製造方法 - Google Patents
発光ダイオードパッケージ、発光ダイオードパッケージ用回路基板およびその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 41
- 239000000758 substrate Substances 0.000 claims description 77
- 238000000034 method Methods 0.000 claims description 32
- 238000007743 anodising Methods 0.000 claims description 18
- 239000011347 resin Substances 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 12
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 229910052735 hafnium Inorganic materials 0.000 claims description 9
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052749 magnesium Inorganic materials 0.000 claims description 9
- 239000011777 magnesium Substances 0.000 claims description 9
- 229910052715 tantalum Inorganic materials 0.000 claims description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 230000008901 benefit Effects 0.000 description 8
- 230000017525 heat dissipation Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000007716 flux method Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
- H05K3/0052—Depaneling, i.e. dividing a panel into circuit boards; Working of the edges of circuit boards
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
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- Engineering & Computer Science (AREA)
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- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
また、本発明による発光ダイオードパッケージの製造方法を利用すると、製造工程の単純化により製造原価を低減することが可能で、かつ一度に多数の発光ダイオードパッケージを製作することができるので、生産性が増大されるという利点がある。
110 貫通孔
120 絶縁酸化層
200 導電パターン
210 第1導電パターン
220 第2導電パターン
300 発光ダイオード
400 透明性樹脂
Claims (19)
- 上面に発光ダイオードが装着される発光ダイオードパッケージ用回路基板において、
熱伝導の可能な金属で製作される基板と、
前記基板の上面に露出される面が導電パターンの形成が可能な形状を有するように、前記基板の左右側両端に形成される絶縁酸化層と、
前記絶縁酸化層の上に形成される第1導電パターンと、
前記第1導電パターンと離隔され、前記基板に接触されるように形成される第2導電パターンと、
を含んで成ることを特徴とする発光ダイオードパッケージ用回路基板。 - 前記基板は、アルミニウム、チタン、タンタル、マグネシウム、ハフニウムのいずれか1種または2種以上の合金物質で製作されることを特徴とする、請求項1記載の発光ダイオードパッケージ用回路基板。
- 前記絶縁酸化層は、アノダイジング工程により製作されることを特徴とする、請求項1記載の発光ダイオードパッケージ用回路基板。
- 前記絶縁酸化層は、前記基板の左右側面と前記基板の左右側の上面及び床面に形成されるか、または一定の厚さを有するように前記基板の左右側面に形成されることを特徴とする、請求項1記載の発光ダイオードパッケージ用回路基板。
- 前記絶縁酸化層は、前記基板の上面に露出される部位の両端が前記基板の上面の前側及び後側の周縁に沿って延長されるように形成されることを特徴とする、請求項1記載の発光ダイオードパッケージ用回路基板。
- 熱伝導の可能な金属で製作される基板に2つ以上の貫通孔を形成する段階と、
前記貫通孔の終端周辺と内側面に絶縁酸化層をそれぞれ形成する段階と、
前記絶縁酸化層の表面に第1導電パターンをそれぞれ形成し、第1導電パターンの間に第2導電パターンを形成する段階と、
両端に第1導電パターンが備えられ、中部に第2導電パターンが備えられるように前記基板を切断する段階と、
を含むことを特徴とする発光ダイオードパッケージ用回路基板の製造方法。 - 前記貫通孔は2つ以上の列を成すように形成され、
前記絶縁酸化層は列を成す貫通孔を連結するように形成されることを特徴とする、請求項6記載の発光ダイオードパッケージ用回路基板の製造方法。 - 前記絶縁酸化層は、アノダイジング工法により形成されることを特徴とする、請求項7記載の発光ダイオードパッケージ用回路基板の製造方法。
- 前記基板は、アルミニウム、チタン、タンタル、マグネシウム、ハフニウムのいずれか1種または2種以上の合金物質で製作されることを特徴とする、請求項6記載の発光ダイオードパッケージ用回路基板の製造方法。
- 熱伝導の可能な金属で製作される基板と、
前記基板の上面に露出される面が導電パターンの形成が可能な形状を有するように、前記基板の左右側両端に形成される絶縁酸化層と、
前記絶縁酸化層の上に形成される第1導電パターンと、
前記第1導電パターンと離隔され、前記基板に接触されるように形成される第2導電パターンと、
前記第2導電パターンに装着され、前記第1導電パターンと電気的に連結される発光ダイオードと、
前記発光ダイオードを覆う透明性樹脂と、
を含んで成ることを特徴とする、発光ダイオードパッケージ。 - 前記基板は、アルミニウム、チタン、タンタル、マグネシウム、ハフニウムのいずれか1種または2種以上の合金物質で製作されることを特徴とする、請求項10記載の発光ダイオードパッケージ。
- 前記絶縁酸化層は、アノダイジング工程により形成されることを特徴とする、請求項10記載の発光ダイオードパッケージ。
- 前記絶縁酸化層は、前記基板の左右側面と前記基板の左右側上面及び床面に形成されるか、または一定の厚さを有するように前記基板の左右側面に形成されることを特徴とする、請求項10記載の発光ダイオードパッケージ。
- 前記絶縁酸化層は、前記基板の上面に露出される部位の両端が前記基板の上面の前側及び後側の周縁に沿って延長されるように形成されることを特徴とする、請求項10記載の発光ダイオードパッケージ。
- 熱伝導の可能な金属で製作される基板に2つ以上の貫通孔を形成する段階と、
前記貫通孔の終端周辺と内側面に絶縁酸化層をそれぞれ形成する段階と、
前記絶縁酸化層の表面に第1導電パターンをそれぞれ形成し、前記第1導電パターンの間に第2導電パターンを形成する段階と、
2つの貫通孔の間の前記第2導電パターンの上に発光ダイオードを装着し、前記発光ダイオードと前記第1導電パターンを電気的に繋ぐ段階と、
前記発光ダイオードを覆うように透明性樹脂を塗布する段階と、
前記発光ダイオードがそれぞれ分離されるように前記基板を切断する段階と、
を含むことを特徴とする発光ダイオードパッケージの製造方法。 - 前記貫通孔は2つ以上の列を成すように形成され、
前記絶縁酸化層は列を成す貫通孔を連結するように形成され、
前記発光ダイオードは互いに異なる列の貫通孔の間に位置されるように列を成して装着されることを特徴とする、請求項15記載の発光ダイオードパッケージの製造方法。 - 前記透明性樹脂は、列を成す発光ダイオードを全て覆うように長く形成されることを特徴とする、請求項15記載の発光ダイオードパッケージの製造方法。
- 前記絶縁酸化層は、アノダイジング工法により形成されることを特徴とする、請求項15記載の発光ダイオードパッケージの製造方法。
- 前記基板は、アルミニウム、チタン、タンタル、マグネシウム、ハフニウムのいずれか1種、または2種以上の合金物質で製作されることを特徴とする、請求項15記載の発光ダイオードパッケージの製造方法。
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KR10-2006-0018861 | 2006-02-27 | ||
KR1020060018861A KR100780196B1 (ko) | 2006-02-27 | 2006-02-27 | 발광다이오드 패키지, 발광다이오드 패키지용 회로기판 및그 제조방법 |
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JP4438842B2 (ja) * | 2007-08-31 | 2010-03-24 | セイコーエプソン株式会社 | 半導体発光素子のための駆動回路およびこれを用いた光源装置、照明装置、モニタ装置、画像表示装置 |
KR100982986B1 (ko) * | 2008-04-17 | 2010-09-17 | 삼성엘이디 주식회사 | 서브마운트, 발광다이오드 패키지 및 그 제조방법 |
JP5116551B2 (ja) * | 2008-04-25 | 2013-01-09 | 京セラ株式会社 | 発光装置 |
DE102008021435A1 (de) * | 2008-04-29 | 2009-11-19 | Schott Ag | Gehäuse für LEDs mit hoher Leistung |
US9147812B2 (en) * | 2008-06-24 | 2015-09-29 | Cree, Inc. | Methods of assembly for a semiconductor light emitting device package |
KR100958024B1 (ko) | 2008-08-05 | 2010-05-17 | 삼성엘이디 주식회사 | 발광 다이오드 패키지 및 그 제조방법 |
KR101077264B1 (ko) * | 2009-02-17 | 2011-10-27 | (주)포인트엔지니어링 | 광소자용 기판, 이를 갖는 광소자 패키지 및 이의 제조 방법 |
KR101124102B1 (ko) * | 2009-08-24 | 2012-03-21 | 삼성전기주식회사 | 발광 소자 패키지용 기판 및 이를 포함하는 발광 소자 패키지 |
JP5485642B2 (ja) * | 2009-10-06 | 2014-05-07 | シチズン電子株式会社 | 発光ダイオード及びその製造方法 |
WO2011098151A1 (en) * | 2010-02-15 | 2011-08-18 | Tomtom International B.V. | Driver cicruit apparatus for an led string, light source apparatus and integrated circuit |
JP5912471B2 (ja) * | 2011-12-08 | 2016-04-27 | シチズンホールディングス株式会社 | 半導体デバイス |
KR101268097B1 (ko) * | 2012-03-21 | 2013-05-29 | 주식회사 마이크로이즈 | 실리콘 기판을 이용한 발광다이오드 패키징 및 그 제조방법 |
KR101348405B1 (ko) * | 2012-06-01 | 2014-01-10 | 주식회사 마이크로이즈 | 실리콘 기판을 이용한 발광다이오드 패키징 및 그 제조방법 |
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JPH0388472U (ja) * | 1989-12-22 | 1991-09-10 | ||
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JP3074264B2 (ja) | 1997-11-17 | 2000-08-07 | 富士通株式会社 | 半導体装置及びその製造方法及びリードフレーム及びその製造方法 |
US7244965B2 (en) | 2002-09-04 | 2007-07-17 | Cree Inc, | Power surface mount light emitting die package |
CN101789482B (zh) * | 2003-03-10 | 2013-04-17 | 丰田合成株式会社 | 固体元件装置及其制造方法 |
JP4266738B2 (ja) * | 2003-07-02 | 2009-05-20 | オリンパス株式会社 | 結紮装置 |
WO2005091389A1 (en) | 2004-03-19 | 2005-09-29 | Showa Denko K.K. | Compound semiconductor light-emitting device and production method thereof |
JP4780939B2 (ja) | 2004-07-28 | 2011-09-28 | 京セラ株式会社 | 発光装置 |
JP4142029B2 (ja) * | 2004-05-07 | 2008-08-27 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
KR100613066B1 (ko) * | 2004-07-09 | 2006-08-16 | 서울반도체 주식회사 | 일체형 방열판을 갖는 발광 다이오드 패키지 및 그것을제조하는 방법 |
KR100629521B1 (ko) | 2005-07-29 | 2006-09-28 | 삼성전자주식회사 | Led 패키지 및 그 제조방법과 이를 이용한 led어레이 모듈 |
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KR20070088956A (ko) | 2007-08-30 |
US20070201213A1 (en) | 2007-08-30 |
US8476090B2 (en) | 2013-07-02 |
KR100780196B1 (ko) | 2007-11-27 |
US20110065219A1 (en) | 2011-03-17 |
US7863640B2 (en) | 2011-01-04 |
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TWI362773B (en) | 2012-04-21 |
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