JP4718835B2 - レーザー機械加工法 - Google Patents

レーザー機械加工法 Download PDF

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Publication number
JP4718835B2
JP4718835B2 JP2004526895A JP2004526895A JP4718835B2 JP 4718835 B2 JP4718835 B2 JP 4718835B2 JP 2004526895 A JP2004526895 A JP 2004526895A JP 2004526895 A JP2004526895 A JP 2004526895A JP 4718835 B2 JP4718835 B2 JP 4718835B2
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JP
Japan
Prior art keywords
liquid
halocarbon
machining
halide
environment
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Expired - Fee Related
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JP2004526895A
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English (en)
Japanese (ja)
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JP2005534545A (ja
JP2005534545A5 (enExample
Inventor
ボイル、エイドリアン
ファルサリ、マリア
Original Assignee
エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド
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Publication date
Priority claimed from GB0224585A external-priority patent/GB2394436B/en
Application filed by エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド filed Critical エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド
Publication of JP2005534545A publication Critical patent/JP2005534545A/ja
Publication of JP2005534545A5 publication Critical patent/JP2005534545A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/1224—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in vacuum
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Laser Beam Processing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Drying Of Semiconductors (AREA)
JP2004526895A 2002-08-06 2003-08-06 レーザー機械加工法 Expired - Fee Related JP4718835B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
IE20020655 2002-08-06
IE2002/0655 2002-08-06
GB0224585.0 2002-10-22
GB0224585A GB2394436B (en) 2002-10-22 2002-10-22 Laser machining
PCT/EP2003/008706 WO2004015753A1 (en) 2002-08-06 2003-08-06 Laser machinining

Publications (3)

Publication Number Publication Date
JP2005534545A JP2005534545A (ja) 2005-11-17
JP2005534545A5 JP2005534545A5 (enExample) 2007-07-12
JP4718835B2 true JP4718835B2 (ja) 2011-07-06

Family

ID=31716929

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004526895A Expired - Fee Related JP4718835B2 (ja) 2002-08-06 2003-08-06 レーザー機械加工法

Country Status (6)

Country Link
US (1) US20060163209A1 (enExample)
EP (1) EP1529309A1 (enExample)
JP (1) JP4718835B2 (enExample)
KR (1) KR20050033072A (enExample)
AU (1) AU2003260374A1 (enExample)
WO (1) WO2004015753A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006003605B4 (de) * 2006-01-25 2010-09-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Materialabtrag an Si-Festkörpern und dessen Verwendung
US20090084760A1 (en) * 2006-01-25 2009-04-02 Fraunhofer-Sesellschaft Zur Forderung Der Angewandten Forschung E.V. Method for removing material from solids and use thereof
DE102006030588A1 (de) * 2006-07-03 2008-01-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Flüssigkeitsstrahlgeführtes Ätzverfahren zum Materialabtrag an Festkörpern sowie dessen Verwendung
US20140245608A1 (en) * 2011-10-07 2014-09-04 Canon Kabushiki Kaisha Method and apparatus for laser-beam processing and method for manufacturing ink jet head
JP5725430B2 (ja) * 2011-10-18 2015-05-27 富士電機株式会社 固相接合ウエハの支持基板の剥離方法および半導体装置の製造方法
US20190233321A1 (en) * 2018-01-26 2019-08-01 Corning Incorporated Liquid-assisted laser micromachining of transparent dielectrics
CN115029786B (zh) * 2022-06-24 2024-04-30 云南北方光学科技有限公司 一种红外用薄形硅窗口的加工方法
WO2025162589A1 (en) * 2024-02-02 2025-08-07 Huawei Technologies Co., Ltd. Method and apparatus for etching a sample

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3489564A (en) * 1967-05-29 1970-01-13 Gen Electric Photolytic etching of silicon dioxide
US3866398A (en) * 1973-12-20 1975-02-18 Texas Instruments Inc In-situ gas-phase reaction for removal of laser-scribe debris
JPS59225896A (ja) * 1983-06-06 1984-12-18 Semiconductor Energy Lab Co Ltd レ−ザ加工方法
JPS6153731A (ja) * 1984-08-24 1986-03-17 Anritsu Corp 紫外線によるエツチング方法及び装置
JPS6394657A (ja) * 1986-10-08 1988-04-25 Nec Corp レ−ザ加工方法およびレ−ザ加工装置
US5266532A (en) * 1990-03-29 1993-11-30 The United States Of America As Represented By The Secretary Of The Navy Method for laser-assisted silicon etching using halocarbon ambients
US5385633A (en) * 1990-03-29 1995-01-31 The United States Of America As Represented By The Secretary Of The Navy Method for laser-assisted silicon etching using halocarbon ambients
US5322988A (en) * 1990-03-29 1994-06-21 The United States Of America As Represented By The Secretary Of The Navy Laser texturing
US5164324A (en) * 1990-03-29 1992-11-17 The United States Of America As Represented By The Secretary Of The Navy Laser texturing
US5057184A (en) * 1990-04-06 1991-10-15 International Business Machines Corporation Laser etching of materials in liquids
US5312516A (en) * 1992-04-20 1994-05-17 Texas Instruments Incorporated Anisotropic tantalum pentoxide etch
JPH0631479A (ja) * 1992-05-20 1994-02-08 Fuji Electric Co Ltd 湿式レーザ加工方法およびレーザ加工ヘッド
WO1995007152A1 (en) * 1993-09-08 1995-03-16 Uvtech Systems, Inc. Surface processing
AUPN736195A0 (en) * 1995-12-29 1996-01-25 Pacific Solar Pty Limited Improved laser grooving method
JPH10189527A (ja) * 1996-12-20 1998-07-21 Fujitsu Ltd 半導体装置の製造方法及び半導体装置の製造装置
US6720522B2 (en) * 2000-10-26 2004-04-13 Kabushiki Kaisha Toshiba Apparatus and method for laser beam machining, and method for manufacturing semiconductor devices using laser beam machining
JP3660294B2 (ja) * 2000-10-26 2005-06-15 株式会社東芝 半導体装置の製造方法
DE10130349A1 (de) * 2001-06-22 2003-01-02 Konrad Seppelt Verfahren zum lokalen laserinduzierten Ätzen von Feststoffen
US20030062126A1 (en) * 2001-10-03 2003-04-03 Scaggs Michael J. Method and apparatus for assisting laser material processing
WO2003028943A1 (en) * 2001-10-03 2003-04-10 Lambda Physik Application Center, L.L.C. Method and apparatus for fine liquid spray assisted laser material processing

Also Published As

Publication number Publication date
US20060163209A1 (en) 2006-07-27
KR20050033072A (ko) 2005-04-08
JP2005534545A (ja) 2005-11-17
EP1529309A1 (en) 2005-05-11
AU2003260374A1 (en) 2004-02-25
WO2004015753A1 (en) 2004-02-19

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