JP4712361B2 - 薄膜トランジスタの作製方法 - Google Patents

薄膜トランジスタの作製方法 Download PDF

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Publication number
JP4712361B2
JP4712361B2 JP2004350021A JP2004350021A JP4712361B2 JP 4712361 B2 JP4712361 B2 JP 4712361B2 JP 2004350021 A JP2004350021 A JP 2004350021A JP 2004350021 A JP2004350021 A JP 2004350021A JP 4712361 B2 JP4712361 B2 JP 4712361B2
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Japan
Prior art keywords
film
insulating film
electrode
wiring
substrate
Prior art date
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Expired - Fee Related
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JP2004350021A
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English (en)
Japanese (ja)
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JP2005210083A (ja
JP2005210083A5 (cg-RX-API-DMAC7.html
Inventor
舜平 山崎
慎志 前川
洋平 神野
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004350021A priority Critical patent/JP4712361B2/ja
Publication of JP2005210083A publication Critical patent/JP2005210083A/ja
Publication of JP2005210083A5 publication Critical patent/JP2005210083A5/ja
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  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2004350021A 2003-12-02 2004-12-02 薄膜トランジスタの作製方法 Expired - Fee Related JP4712361B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004350021A JP4712361B2 (ja) 2003-12-02 2004-12-02 薄膜トランジスタの作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2003403666 2003-12-02
JP2003403848 2003-12-02
JP2003403848 2003-12-02
JP2003403666 2003-12-02
JP2004350021A JP4712361B2 (ja) 2003-12-02 2004-12-02 薄膜トランジスタの作製方法

Publications (3)

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JP2005210083A JP2005210083A (ja) 2005-08-04
JP2005210083A5 JP2005210083A5 (cg-RX-API-DMAC7.html) 2006-10-05
JP4712361B2 true JP4712361B2 (ja) 2011-06-29

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JP2004350021A Expired - Fee Related JP4712361B2 (ja) 2003-12-02 2004-12-02 薄膜トランジスタの作製方法

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JP (1) JP4712361B2 (cg-RX-API-DMAC7.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7737442B2 (en) * 2005-06-28 2010-06-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4670596B2 (ja) 2005-11-04 2011-04-13 セイコーエプソン株式会社 膜パターン形成方法、デバイス、電気光学装置、及び電子機器
KR20090130089A (ko) * 2005-11-15 2009-12-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 다이오드 및 액티브 매트릭스 표시장치
JP5028900B2 (ja) * 2006-08-01 2012-09-19 カシオ計算機株式会社 発光素子を用いたディスプレイパネルの製造方法
JP4919738B2 (ja) 2006-08-31 2012-04-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR20100020514A (ko) * 2007-06-08 2010-02-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US8471988B2 (en) 2008-08-27 2013-06-25 Sharp Kabushiki Kaisha Electrode contact structure, liquid crystal display apparatus including same, and method for manufacturing electrode contact structure
KR101694877B1 (ko) * 2009-10-16 2017-01-11 삼성전자주식회사 그라핀 소자 및 그 제조 방법
JP6088852B2 (ja) * 2012-03-01 2017-03-01 株式会社半導体エネルギー研究所 半導体装置の作製方法、及び半導体装置
CN105122125B (zh) * 2014-01-16 2018-03-09 华为终端（东莞）有限公司 液晶显示器及液晶显示器检测方法和电子装置
KR102468861B1 (ko) * 2017-12-22 2022-11-18 엘지디스플레이 주식회사 전계발광표시장치
CN111989985B (zh) * 2018-04-26 2025-02-18 堺显示器制品株式会社 有机el装置及其制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03159174A (ja) * 1989-11-16 1991-07-09 Sanyo Electric Co Ltd 液晶表示装置
JP3926076B2 (ja) * 1999-12-24 2007-06-06 日本電気株式会社 薄膜パターン形成方法
KR100650417B1 (ko) * 2001-02-19 2006-11-28 인터내셔널 비지네스 머신즈 코포레이션 박막 트랜지스터 구조, 그 박막 트랜지스터 구조의 제조방법 및 그 박막 트랜지스터 구조를 사용한 디스플레이 장치
JP2003318401A (ja) * 2002-04-22 2003-11-07 Seiko Epson Corp デバイスの製造方法、デバイス、表示装置、および電子機器
JP2003318193A (ja) * 2002-04-22 2003-11-07 Seiko Epson Corp デバイス、その製造方法及び電子装置

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JP2005210083A (ja) 2005-08-04

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