JP2005210083A5 - - Google Patents

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Publication number
JP2005210083A5
JP2005210083A5 JP2004350021A JP2004350021A JP2005210083A5 JP 2005210083 A5 JP2005210083 A5 JP 2005210083A5 JP 2004350021 A JP2004350021 A JP 2004350021A JP 2004350021 A JP2004350021 A JP 2004350021A JP 2005210083 A5 JP2005210083 A5 JP 2005210083A5
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JP
Japan
Prior art keywords
insulating film
opening
film
forming
gate
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Granted
Application number
JP2004350021A
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English (en)
Japanese (ja)
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JP2005210083A (ja
JP4712361B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2004350021A priority Critical patent/JP4712361B2/ja
Priority claimed from JP2004350021A external-priority patent/JP4712361B2/ja
Publication of JP2005210083A publication Critical patent/JP2005210083A/ja
Publication of JP2005210083A5 publication Critical patent/JP2005210083A5/ja
Application granted granted Critical
Publication of JP4712361B2 publication Critical patent/JP4712361B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004350021A 2003-12-02 2004-12-02 薄膜トランジスタの作製方法 Expired - Fee Related JP4712361B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004350021A JP4712361B2 (ja) 2003-12-02 2004-12-02 薄膜トランジスタの作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2003403848 2003-12-02
JP2003403666 2003-12-02
JP2003403848 2003-12-02
JP2003403666 2003-12-02
JP2004350021A JP4712361B2 (ja) 2003-12-02 2004-12-02 薄膜トランジスタの作製方法

Publications (3)

Publication Number Publication Date
JP2005210083A JP2005210083A (ja) 2005-08-04
JP2005210083A5 true JP2005210083A5 (cg-RX-API-DMAC7.html) 2006-10-05
JP4712361B2 JP4712361B2 (ja) 2011-06-29

Family

ID=34916066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004350021A Expired - Fee Related JP4712361B2 (ja) 2003-12-02 2004-12-02 薄膜トランジスタの作製方法

Country Status (1)

Country Link
JP (1) JP4712361B2 (cg-RX-API-DMAC7.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7737442B2 (en) * 2005-06-28 2010-06-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4670596B2 (ja) 2005-11-04 2011-04-13 セイコーエプソン株式会社 膜パターン形成方法、デバイス、電気光学装置、及び電子機器
KR101050767B1 (ko) * 2005-11-15 2011-07-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
JP5028900B2 (ja) * 2006-08-01 2012-09-19 カシオ計算機株式会社 発光素子を用いたディスプレイパネルの製造方法
JP4919738B2 (ja) * 2006-08-31 2012-04-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN101681578B (zh) * 2007-06-08 2012-04-11 株式会社半导体能源研究所 显示装置
US8471988B2 (en) 2008-08-27 2013-06-25 Sharp Kabushiki Kaisha Electrode contact structure, liquid crystal display apparatus including same, and method for manufacturing electrode contact structure
KR101694877B1 (ko) * 2009-10-16 2017-01-11 삼성전자주식회사 그라핀 소자 및 그 제조 방법
JP6088852B2 (ja) * 2012-03-01 2017-03-01 株式会社半導体エネルギー研究所 半導体装置の作製方法、及び半導体装置
EP3001242B1 (en) 2014-01-16 2020-08-12 Huawei Device Co., Ltd. Liquid crystal display, detection method for liquid crystal display and electronic device
KR102468861B1 (ko) * 2017-12-22 2022-11-18 엘지디스플레이 주식회사 전계발광표시장치
US11107876B2 (en) * 2018-04-26 2021-08-31 Sakai Display Products Corporation Organic electroluminescent device and method for producing same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03159174A (ja) * 1989-11-16 1991-07-09 Sanyo Electric Co Ltd 液晶表示装置
JP3926076B2 (ja) * 1999-12-24 2007-06-06 日本電気株式会社 薄膜パターン形成方法
KR100650417B1 (ko) * 2001-02-19 2006-11-28 인터내셔널 비지네스 머신즈 코포레이션 박막 트랜지스터 구조, 그 박막 트랜지스터 구조의 제조방법 및 그 박막 트랜지스터 구조를 사용한 디스플레이 장치
JP2003318193A (ja) * 2002-04-22 2003-11-07 Seiko Epson Corp デバイス、その製造方法及び電子装置
JP2003318401A (ja) * 2002-04-22 2003-11-07 Seiko Epson Corp デバイスの製造方法、デバイス、表示装置、および電子機器

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