JP4710831B2 - 耐熱性樹脂ペースト及びその製造方法 - Google Patents
耐熱性樹脂ペースト及びその製造方法 Download PDFInfo
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- JP4710831B2 JP4710831B2 JP2006537589A JP2006537589A JP4710831B2 JP 4710831 B2 JP4710831 B2 JP 4710831B2 JP 2006537589 A JP2006537589 A JP 2006537589A JP 2006537589 A JP2006537589 A JP 2006537589A JP 4710831 B2 JP4710831 B2 JP 4710831B2
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- resistant resin
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- heat resistant
- filler
- organic solvent
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- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- WYVAMUWZEOHJOQ-UHFFFAOYSA-N propionic anhydride Chemical compound CCC(=O)OC(=O)CC WYVAMUWZEOHJOQ-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
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Images
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Description
また本発明は、第一の有機溶媒(A1)が、含窒素化合物を含有してなる上記耐熱性樹脂ペーストに関する。
また本発明は、含窒素化合物が複素環式の含窒素化合物である上記耐熱性樹脂ペーストに関する。
また本発明は、ラクトン類が、γ−ブチロラクトン又はγ−バレロラクトンである上記耐熱性樹脂ペーストに関する。
また本発明は、耐熱性樹脂(B)及び耐熱性樹脂フィラー(C)が、ポリイミド樹脂又はその前駆体である上記耐熱性樹脂ペーストに関する。
また本発明は、耐熱性樹脂(B)及び/又は耐熱性樹脂フィラー(C)が、
下記一般式(I)
で表される芳香族ジアミンを含有するジアミン類、及び/又は、
下記一般式(II)
下記一般式(III)
で表される芳香族テトラカルボン酸二無水物又はその誘導体を含有するテトラカルボン酸類とを反応させて得られるポリイミド樹脂又はその前駆体である上記耐熱性樹脂ペーストに関する。
また本発明は、耐熱性樹脂ペーストのチキソトロピー係数が1.5以上である上記耐熱性樹脂ペーストに関する。
また本発明は、耐熱性樹脂フィラー(C)が、第二の有機溶媒(A2)中で調製されたフィラーである上記耐熱性樹脂ペーストに関する。
また本発明は、耐熱性樹脂フィラー(C)を、ラクトン類を含有してなる第二の有機溶媒(A2)中で調製する上記耐熱性樹脂ペーストの製造方法に関する。
本発明で使用される第一の有機溶媒(A1)としては、第二の有機溶媒(A2)との混合有機溶媒として用いた場合に、耐熱性樹脂(B)を溶解させ、耐熱性樹脂フィラー(C)を溶解させないものであり、かつ、第一の有機溶媒(A1)単独で耐熱性樹脂フィラー(C)を溶解させるものであれば特に制限は無い。好ましくは、第一の有機溶媒(A1)単独で耐熱性樹脂(B)を溶解させるものである。(A1)として、例えば、ジエチレングリコールジメチルエーテル、ジエチレングリコールジエチルエーテル、トリエチレングリコールジメチルエーテル、トリエチレングリコールジエチルエーテル等のエーテル系化合物、ジメチルスルホキシド、ジエチルスルホキシド、ジメチルスルホン、スルホラン等の含硫黄系化合物、酢酸セロソルブ等のエステル系化合物、シクロヘキサノン、メチルエチルケトン等のケトン系化合物、N−メチルピロリドン、N,N’−ジメチルアセトアミド、N,N’−ジメチルホルムアミド、1,3−ジメチル−3,4,5,6−テトラヒドロ−2(1H)−ピリミジノン、1,3−ジメチル−2−イミダゾリジノン、各種アミン類等の含窒素系化合物、トルエン、キシレン等の芳香族炭化水素系化合物などが挙げられ、これらは単独で又は2種類以上組み合わせて使用することができる。
本発明に使用する第二の有機溶媒(A2)は、ラクトン類を含有してなる有機溶媒であり、ラクトン類又はラクトン類とそれ以外の混合溶媒である。第二の有機溶媒(A2)は、第一の有機溶媒(A1)との混合有機溶媒として用いた場合に、耐熱性樹脂(B)を溶解させ、耐熱性樹脂フィラー(C)を溶解させないものであり、かつ、第二の有機溶媒(A2)単独で耐熱性樹脂フィラー(C)を溶解させないものであれば特に制限はない。本発明においては、ラクトン類の使用量を、第二の有機溶媒(A2)の総量に対して5重量%以上とすることが好ましく、5〜95重量%とすることがより好ましく、10〜90重量%とすることがさらに好ましく、15〜90重量%とすることが特に好ましく、15〜85重量%とすることが極めて好ましい。ラクトン類の使用量が5%以上であれば、得られたペーストのチキソトロピー性が扱いやすい範囲になるため好ましく、95重量%以下であれば(B)耐熱性樹脂及び(C)耐熱性樹脂フィラーの溶解性が低下し難く、得られる塗膜特性の低下を防ぎやすくなる。
本発明における可溶性の耐熱性樹脂(B)としては、(A1)と(A2)の混合有機溶媒に対して可溶、好ましくは−25℃〜150℃のいずれかの温度で可溶であれば特に制限が無く、具体的には、ポリイミド樹脂、ポリアミドイミド樹脂、ポリアミド樹脂、等が挙げられ、中でも耐熱性等を考慮すると、ポリイミド樹脂又はその前駆体であることが好ましい。耐熱性樹脂(B)は、第一の有機溶媒(A1)単独に可溶であることが好ましく、−25℃〜150℃のいずれかの温度で可溶であることがより好ましい。耐熱性樹脂(B)は、第二の有機溶媒(A2)単独に不溶であってもよい。
下記一般式(II)
で表される芳香族テトラカルボン酸二無水物又はその誘導体を使用することが好ましい。
耐熱性樹脂フィラー(C)としては、(A1)と(A2)の混合有機溶媒に対して不溶、好ましくは−25℃〜250℃の少なくとも一点で不溶である。また、耐熱性樹脂フィラー(C)は、第一の有機溶媒(A1)単独に可溶であり、好ましくは−25℃〜250℃の少なくとも一点で可溶である。さらに、耐熱性樹脂フィラー(C)は、第二の有機溶媒(A2)単独に不溶であり、好ましくは−25℃〜250℃の少なくとも一点で不溶である。このようなフィラーであれば耐熱性樹脂フィラー(C)に特に制限が無く、具体的には、ポリイミド樹脂、ポリアミドイミド樹脂、ポリアミド樹脂あるいはその前駆体からなる樹脂フィラーが挙げられ、使用する溶媒により適宜選択することができる。中でも耐熱性の点で、ポリイミド樹脂またはその前駆体であることが好ましい。
本発明の耐熱性樹脂ペーストのチキソトロピー係数は1.5以上であり、1.6以上がより好ましく、1.7以上がさらに好ましく、1.8以上が特に好ましい。耐熱性樹脂ペーストのチキソトロピー係数はE型粘度計(東京計器社製、RE−80U型)を用いて試料量0.2g、測定温度25℃で測定した。回転数1rpmと10rpmのペーストの見かけ粘度、η1とη10の比、η1/η10として表される。チキソトロピー係数が1.5であれば十分な印刷あるいは塗布特性が得られやすくなる。
本発明の一実施態様によれば、耐熱性樹脂フィラー(C)がラクトン類を含有してなる第二の有機溶媒(A2)中で調製することができ、作業性に優れる耐熱性樹脂ペーストの製造法を提供することができる。
温度計、撹拌機、窒素導入管、油水分離機付き冷却管を取り付けた1リットルの4つ口フラスコに窒素気流下、3,4,3´,4´−ベンゾフェノンテトラカルボン酸二無水物(以下BTDAとする)96.7g(0.3モル)、4,4´−ジアミノジフェニルエーテル(以下DDEとする)55.4g(0.285モル)、1,3−ビス(3−アミノプロピル)テトラメチルジシロキサン(以下LP−7100とする)3.73g(0.015モル)及び1,3−ジメチル−3,4,5,6−テトラヒドロ−2(1H)−ピリミジノン(以下DMPUとする)363gを仕込み、70〜90℃で約6時間撹拌した後、冷却して反応を止め、数平均分子量(GPC法で測定し、標準ポリスチレンによる検量線を用いて算出)25,000の耐熱性樹脂溶液(PI−1)を得た。
合成例1と全く同様のフラスコに、BTDA 96.7g(0.3モル)、2,2−ビス〔4−(4−アミノフェノキシ)フェニル〕プロパン(以下BAPPとする)61.5g(0.15モル)、DDE 27.0g(0.135モル)、LP−7100 3.73g(0,015モル)、DMPU 133.25g及びγ−ブチロラクトン(以下γ−BLとする)308.59gを仕込み、70〜90℃で5時間撹拌したところ、溶液中に数平均分子量24,000のポリイミド前駆体フィラーが析出した。その後、冷却して反応を止め、耐熱性樹脂フィラー溶液(PIF−1)を得た。得られた耐熱性樹脂フィラーは、DMPUに可溶であった。
実施例1と全く同様のフラスコに、BTDA 80.5g(0.25モル)、BAPP 97.38g(0.2375モル)、LP−7100 3.11g(0.0125モル)、γ−BL 295.62g及びDMPU 126.69gを仕込んだ後、実施例1と全く同様の反応を行ったところ、約7時間で数平均分子量25,000のポリイミド前駆体フィラーが析出したので、冷却して反応を止め、耐熱樹脂フィラー溶液(PIF−2)を得た。得られた耐熱性樹脂フィラーは、DMPUに可溶であった。
実施例1と全く同様のフラスコに、BTDA 96.7g(0.3モル)、BAPP 61.5g(0.15モル)、DDE 27.0g(0.135モル)、LP−7100 3.73g(0,015モル)、DMPU 419.75g及びγ−BL 22.09gを仕込み、70〜90℃で8時間反応した後、冷却して反応を止め、そのまま12時間放置し、数平均分子量26,000のポリイミド前駆体フィラーを含有する耐熱性樹脂フィラー溶液(PIF−3)を得た。得られた耐熱性樹脂フィラーは、DMPUに可溶であった。
実施例1と全く同様のフラスコに、BTDA 96.7g(0.3モル)、BAPP 61.5g(0.15モル)、DDE 27.0g(0.135モル)、LP−7100 3.73g(0,015モル)、DMPU 44.19g及びγ−BL 397.66gを仕込み、70〜90℃で3時間撹拌したところ、溶液中に数平均分子量15,000のポリイミド前駆体フィラーが析出した。その後、冷却して反応を止め、耐熱性樹脂フィラー溶液(PIF−4)を得た。得られた耐熱性樹脂フィラーは、DMPUに可溶であった。
実施例1において、DMPU 133.25g及びγ−BL 308.59gとしていた反応溶媒をDMPU 441.84gとした以外は実施例1と全く同様の反応を行った後、室温で30日間放置したが、ポリイミド前駆体フィラーは析出しなかった。
実施例1と全く同様のフラスコに、3,3’,4,4’−ビフェニルテトラカルボン酸二無水物(以下BPDAとする)102.9g(0.35モル)、DDE 70.0g(0.35モル)及びDMPU 403.4gを仕込み、70〜90℃で8時間反応した後、冷却して反応を止め、そのまま5日間放置し、数平均分子量30,000のポリイミド前駆体フィラーを含有する耐熱樹脂フィラー溶液を得た。
温度計、撹拌機、窒素導入管、油水分離機付き冷却管を取り付けた1リットルの4つ口フラスコに窒素気流下、合成例で得られた耐熱性樹脂溶液(PI−1)300gと実施例1で得られた耐熱性樹脂フィラー溶液(PIF−1)400gを仕込み、50〜70℃で2時間撹拌し、耐熱性樹脂が溶解し、耐熱性樹脂フィラーが分散している耐熱性樹脂ペースト(PIP−1)を得た。
印刷後、光学顕微鏡でにじみ及びだれを観察した。
結果をまとめて表2に示す。
実施例5において、実施例1で得られた耐熱性樹脂フィラー溶液(PIF−1)を実施例2で得られた耐熱性樹脂フィラー溶液(PIF−2)にした以外は実施例5と全く同様の操作を行い、耐熱性樹脂が溶解し、耐熱性樹脂フィラーが分散している耐熱性樹脂ペースト(PIP−2)を得た。
実施例5において、実施例1で得られた耐熱性樹脂フィラー溶液(PIF−1)を実施例3で得られた耐熱性樹脂フィラー溶液(PIF−3)にした以外は実施例5と全く同様の操作を行い、耐熱性樹脂が溶解し、耐熱性樹脂フィラーが分散している耐熱性樹脂ペースト(PIP−3)を得た。
実施例5において、実施例1で得られた耐熱性樹脂フィラー溶液(PIF−1)を実施例4で得られた耐熱性樹脂フィラー溶液(PIF−4)にした以外は実施例5と全く同様の操作を行い、耐熱性樹脂が溶解し、耐熱性樹脂フィラーが分散している耐熱性樹脂ペースト(PIP−4)を得た。
実施例5において、実施例1で得られた耐熱性樹脂フィラー溶液(PIF−1)を比較例1で得られた溶液にした以外は実施例5と全く同様の操作を行い、耐熱性樹脂溶液(PIP−5)を得た。
Claims (8)
- 第一の有機溶媒(A1)、
ラクトン類を含有してなる第二の有機溶媒(A2)、
(A1)と(A2)の混合有機溶媒に可溶である耐熱性樹脂(B)、及び、
(A1)に可溶であり(A2)に不溶である耐熱性樹脂フィラー(C)を含み、
(A1)、(A2)及び(B)を含む溶液中に(C)が分散してなる耐熱性樹脂ペーストであって、
第一の有機溶媒(A1)が、含窒素化合物を含有し、
ラクトン類の含有量が、第二の有機溶媒(A2)の総量に対し5重量%以上であり、
耐熱性樹脂(B)及び耐熱性樹脂フィラー(C)の含有量が、耐熱性樹脂ペーストの総量に対し5〜90重量%であり、
耐熱性樹脂(B)が、ポリイミド樹脂、ポリアミドイミド樹脂、ポリアミド樹脂、又は、これらの前駆体を含有し、
耐熱性樹脂フィラー(C)が、ポリイミド樹脂、ポリアミドイミド樹脂、ポリアミド樹脂、又は、これらの前駆体を含有することを特徴とする耐熱性樹脂ペースト。 - 含窒素化合物が複素環式の含窒素化合物である請求項1記載の耐熱性樹脂ペースト。
- ラクトン類が、γ−ブチロラクトン又はγ−バレロラクトンである請求項1又は2記載の耐熱性樹脂ペースト。
- 耐熱性樹脂(B)及び耐熱性樹脂フィラー(C)が、ポリイミド樹脂又はその前駆体である請求項1〜3のいずれか1項記載の耐熱性樹脂ペースト。
- 耐熱性樹脂(B)及び/又は耐熱性樹脂フィラー(C)が、
下記一般式(I)
で表される芳香族ジアミンを含有するジアミン類、及び/又は、
下記一般式(II)
下記一般式(III)
で表される芳香族テトラカルボン酸二無水物又はその誘導体を含有するテトラカルボン酸類とを反応させて得られるポリイミド樹脂又はその前駆体である請求項1〜4のいずれか1項記載の耐熱性樹脂ペースト。 - 耐熱性樹脂ペーストのチキソトロピー係数が1.5以上である請求項1〜5のいずれか1項記載の耐熱性樹脂ペースト。
- 耐熱性樹脂フィラー(C)が、第二の有機溶媒(A2)中で調製されたフィラーである請求項1〜6のいずれか1項記載の耐熱性樹脂ペースト。
- 耐熱性樹脂フィラー(C)を、ラクトン類を含有してなる第二の有機溶媒(A2)中で調製する請求項1〜7のいずれか1項記載の耐熱性樹脂ペーストの製造方法。
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Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63309523A (ja) * | 1987-06-11 | 1988-12-16 | Hitachi Chem Co Ltd | ポリエ−テルアミドイミド樹脂ペ−スト |
JPS6436649A (en) * | 1987-07-30 | 1989-02-07 | Hitachi Chemical Co Ltd | Polyamidimide resin paste |
JPH0387290A (ja) * | 1989-08-31 | 1991-04-12 | Toshiba Corp | 情報記録媒体 |
US5037862A (en) * | 1987-06-11 | 1991-08-06 | Hitachi Chemical Company, Ltd. | Polyamide-imide resin pastes |
JPH04153261A (ja) * | 1990-10-17 | 1992-05-26 | Hitachi Chem Co Ltd | 耐熱樹脂ペーストおよびこれを用いたic |
JPH08120075A (ja) * | 1994-10-21 | 1996-05-14 | Sumitomo Chem Co Ltd | コポリイミドの製造法 |
JPH09328549A (ja) * | 1996-06-12 | 1997-12-22 | Central Glass Co Ltd | ポリイミド組成物 |
JP2697215B2 (ja) * | 1988-12-29 | 1998-01-14 | 日立化成工業株式会社 | 耐熱樹脂ペーストおよびこれを用いたic |
WO2001066645A1 (en) * | 2000-03-06 | 2001-09-13 | Hitachi Chemical Co., Ltd. | Resin composition, heat-resistant resin paste and semiconductor device using them and method for manufacture thereof |
JP2001264771A (ja) * | 2001-01-26 | 2001-09-26 | Jsr Corp | 液晶配向剤および液晶配向膜の製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5087658A (en) * | 1988-12-29 | 1992-02-11 | Hitachi Chemical Company, Ltd. | Heat-resistant resin paste and integrated circuit device produced by using the heat-resistant resin paste |
JP3087290B2 (ja) * | 1990-07-26 | 2000-09-11 | 日立化成工業株式会社 | 耐熱性樹脂ペーストおよびこれを用いたic |
KR960002268B1 (ko) | 1993-07-23 | 1996-02-14 | 두산개발주식회사 | 유기물 농도감시장치 |
-
2004
- 2004-09-28 WO PCT/JP2004/014172 patent/WO2006035495A1/ja active Application Filing
- 2004-09-28 JP JP2006537589A patent/JP4710831B2/ja active Active
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Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63309523A (ja) * | 1987-06-11 | 1988-12-16 | Hitachi Chem Co Ltd | ポリエ−テルアミドイミド樹脂ペ−スト |
US5037862A (en) * | 1987-06-11 | 1991-08-06 | Hitachi Chemical Company, Ltd. | Polyamide-imide resin pastes |
JPS6436649A (en) * | 1987-07-30 | 1989-02-07 | Hitachi Chemical Co Ltd | Polyamidimide resin paste |
JP2697215B2 (ja) * | 1988-12-29 | 1998-01-14 | 日立化成工業株式会社 | 耐熱樹脂ペーストおよびこれを用いたic |
JPH0387290A (ja) * | 1989-08-31 | 1991-04-12 | Toshiba Corp | 情報記録媒体 |
JPH04153261A (ja) * | 1990-10-17 | 1992-05-26 | Hitachi Chem Co Ltd | 耐熱樹脂ペーストおよびこれを用いたic |
JPH08120075A (ja) * | 1994-10-21 | 1996-05-14 | Sumitomo Chem Co Ltd | コポリイミドの製造法 |
JPH09328549A (ja) * | 1996-06-12 | 1997-12-22 | Central Glass Co Ltd | ポリイミド組成物 |
WO2001066645A1 (en) * | 2000-03-06 | 2001-09-13 | Hitachi Chemical Co., Ltd. | Resin composition, heat-resistant resin paste and semiconductor device using them and method for manufacture thereof |
JP2001264771A (ja) * | 2001-01-26 | 2001-09-26 | Jsr Corp | 液晶配向剤および液晶配向膜の製造方法 |
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JPWO2006035495A1 (ja) | 2008-05-15 |
US8765867B2 (en) | 2014-07-01 |
WO2006035495A1 (ja) | 2006-04-06 |
CN100528966C (zh) | 2009-08-19 |
CN1833007A (zh) | 2006-09-13 |
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