JP4689035B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4689035B2
JP4689035B2 JP2000380982A JP2000380982A JP4689035B2 JP 4689035 B2 JP4689035 B2 JP 4689035B2 JP 2000380982 A JP2000380982 A JP 2000380982A JP 2000380982 A JP2000380982 A JP 2000380982A JP 4689035 B2 JP4689035 B2 JP 4689035B2
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Japan
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silicon film
film
phosphorus
heat treatment
region
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Expired - Fee Related
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JP2000380982A
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Japanese (ja)
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JP2002203787A (ja
JP2002203787A5 (enrdf_load_stackoverflow
Inventor
慎志 前川
寛 柴田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000380982A priority Critical patent/JP4689035B2/ja
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Publication of JP2002203787A5 publication Critical patent/JP2002203787A5/ja
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JP2000380982A 2000-10-26 2000-12-14 半導体装置の作製方法 Expired - Fee Related JP4689035B2 (ja)

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JP2000380982A JP4689035B2 (ja) 2000-10-26 2000-12-14 半導体装置の作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000326381 2000-10-26
JP2000326381 2000-10-26
JP2000-326381 2000-10-26
JP2000380982A JP4689035B2 (ja) 2000-10-26 2000-12-14 半導体装置の作製方法

Publications (3)

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JP2002203787A JP2002203787A (ja) 2002-07-19
JP2002203787A5 JP2002203787A5 (enrdf_load_stackoverflow) 2008-01-24
JP4689035B2 true JP4689035B2 (ja) 2011-05-25

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JP2000380982A Expired - Fee Related JP4689035B2 (ja) 2000-10-26 2000-12-14 半導体装置の作製方法

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JP (1) JP4689035B2 (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100962054B1 (ko) 2000-12-05 2010-06-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
JP6768481B2 (ja) * 2016-12-12 2020-10-14 株式会社Ｓｃｒｅｅｎホールディングス ドーパント導入方法および熱処理方法
WO2021084757A1 (ja) * 2019-11-01 2021-05-06 シャープ株式会社 表示装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3032801B2 (ja) * 1997-03-03 2000-04-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3939399B2 (ja) * 1997-07-22 2007-07-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3452808B2 (ja) * 1998-10-08 2003-10-06 株式会社半導体エネルギー研究所 半導体装置

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JP2002203787A (ja) 2002-07-19

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