JP4683696B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP4683696B2
JP4683696B2 JP2000205764A JP2000205764A JP4683696B2 JP 4683696 B2 JP4683696 B2 JP 4683696B2 JP 2000205764 A JP2000205764 A JP 2000205764A JP 2000205764 A JP2000205764 A JP 2000205764A JP 4683696 B2 JP4683696 B2 JP 4683696B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
shape
film
island
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000205764A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001085703A5 (de
JP2001085703A (ja
Inventor
律子 河崎
健司 笠原
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2000205764A priority Critical patent/JP4683696B2/ja
Publication of JP2001085703A publication Critical patent/JP2001085703A/ja
Publication of JP2001085703A5 publication Critical patent/JP2001085703A5/ja
Application granted granted Critical
Publication of JP4683696B2 publication Critical patent/JP4683696B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2000205764A 1999-07-09 2000-07-06 半導体装置の作製方法 Expired - Fee Related JP4683696B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000205764A JP4683696B2 (ja) 1999-07-09 2000-07-06 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP19679099 1999-07-09
JP11-196790 1999-07-09
JP2000205764A JP4683696B2 (ja) 1999-07-09 2000-07-06 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2001085703A JP2001085703A (ja) 2001-03-30
JP2001085703A5 JP2001085703A5 (de) 2009-01-08
JP4683696B2 true JP4683696B2 (ja) 2011-05-18

Family

ID=26509982

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000205764A Expired - Fee Related JP4683696B2 (ja) 1999-07-09 2000-07-06 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4683696B2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020094514A (ko) * 2001-06-12 2002-12-18 삼성전자 주식회사 저온 다결정 실리콘 박막 형성 방법
TW552645B (en) 2001-08-03 2003-09-11 Semiconductor Energy Lab Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device
JP3977038B2 (ja) 2001-08-27 2007-09-19 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法
JP4054985B2 (ja) * 2001-12-27 2008-03-05 Ｔｏｔｏ株式会社 光学式タッチパネル装置
US7148508B2 (en) 2002-03-20 2006-12-12 Seiko Epson Corporation Wiring substrate, electronic device, electro-optical device, and electronic apparatus
JP4015044B2 (ja) * 2002-03-20 2007-11-28 セイコーエプソン株式会社 配線基板、電子装置及び電子機器
JP4015045B2 (ja) * 2002-03-20 2007-11-28 セイコーエプソン株式会社 配線基板、電子装置及び電子機器
JP2006309254A (ja) * 2002-03-20 2006-11-09 Seiko Epson Corp 配線基板、電子装置、及び電子機器
JP2003330388A (ja) 2002-05-15 2003-11-19 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
US7332431B2 (en) 2002-10-17 2008-02-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
KR100543478B1 (ko) * 2002-12-31 2006-01-20 엘지.필립스 엘시디 주식회사 유기전계 발광소자와 그 제조방법
KR100947536B1 (ko) * 2003-06-03 2010-03-12 삼성전자주식회사 박막 트랜지스터-액정표시장치
KR20070071968A (ko) * 2005-12-30 2007-07-04 삼성전자주식회사 다결정 실리콘 필름 제조방법 및 이를 적용한 박막트랜지스터의 제조방법
KR101688074B1 (ko) 2010-01-27 2016-12-21 삼성디스플레이 주식회사 표시기판 및 이의 제조방법
JP5411292B2 (ja) 2010-07-16 2014-02-12 パナソニック株式会社 結晶性半導体膜の製造方法及び結晶性半導体膜の製造装置

Also Published As

Publication number Publication date
JP2001085703A (ja) 2001-03-30

Similar Documents

Publication Publication Date Title
US9786787B2 (en) Semiconductor device and fabrication method thereof
US7476937B2 (en) Semiconductor device and method of fabricating the same
US6624013B2 (en) Method for manufacturing a semiconductor device
US8227806B2 (en) Active matrix display in which LDD regions in the driver circuit and the storage capacitor in the pixel section have the same dopant concentration
JP4801790B2 (ja) 半導体装置
US6515336B1 (en) Thin film transistors having tapered gate electrode and taped insulating film
JP4307635B2 (ja) 半導体装置の作製方法
JP4683696B2 (ja) 半導体装置の作製方法
JP4801241B2 (ja) 半導体装置およびその作製方法
JP4683761B2 (ja) 半導体装置の作製方法
JP4578618B2 (ja) 半導体装置及びその作製方法
JP4986333B2 (ja) 半導体装置の作製方法
JP4801242B2 (ja) 半導体装置の作製方法
JP4637333B2 (ja) 半導体装置の作製方法
JP4583654B2 (ja) 半導体装置の作製方法
JP2001320053A (ja) 半導体装置およびその作製方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070629

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070629

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100721

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110201

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110208

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140218

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140218

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees