JP4680952B2 - 送信機中で使用される装置 - Google Patents
送信機中で使用される装置 Download PDFInfo
- Publication number
- JP4680952B2 JP4680952B2 JP2007114228A JP2007114228A JP4680952B2 JP 4680952 B2 JP4680952 B2 JP 4680952B2 JP 2007114228 A JP2007114228 A JP 2007114228A JP 2007114228 A JP2007114228 A JP 2007114228A JP 4680952 B2 JP4680952 B2 JP 4680952B2
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- Prior art keywords
- gain
- power
- output
- circuit
- cell
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
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- 238000004891 communication Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 230000000295 complement effect Effects 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04W—WIRELESS COMMUNICATION NETWORKS
- H04W52/00—Power management, e.g. TPC [Transmission Power Control], power saving or power classes
- H04W52/04—TPC
- H04W52/30—TPC using constraints in the total amount of available transmission power
- H04W52/36—TPC using constraints in the total amount of available transmission power with a discrete range or set of values, e.g. step size, ramping or offsets
- H04W52/362—Aspects of the step size
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
- H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04W—WIRELESS COMMUNICATION NETWORKS
- H04W52/00—Power management, e.g. TPC [Transmission Power Control], power saving or power classes
- H04W52/04—TPC
- H04W52/30—TPC using constraints in the total amount of available transmission power
- H04W52/36—TPC using constraints in the total amount of available transmission power with a discrete range or set of values, e.g. step size, ramping or offsets
- H04W52/367—Power values between minimum and maximum limits, e.g. dynamic range
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45128—Indexing scheme relating to differential amplifiers the folded cascode stage of the folded cascode dif amp contains a reactive element
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45274—Level shifting stages are added to the differential amplifier at a position other than the one or more inputs of the dif amp
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0408—Circuits with power amplifiers
- H04B2001/0416—Circuits with power amplifiers having gain or transmission power control
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04W—WIRELESS COMMUNICATION NETWORKS
- H04W52/00—Power management, e.g. TPC [Transmission Power Control], power saving or power classes
- H04W52/04—TPC
- H04W52/18—TPC being performed according to specific parameters
- H04W52/28—TPC being performed according to specific parameters using user profile, e.g. mobile speed, priority or network state, e.g. standby, idle or non transmission
- H04W52/286—TPC being performed according to specific parameters using user profile, e.g. mobile speed, priority or network state, e.g. standby, idle or non transmission during data packet transmission, e.g. high speed packet access [HSPA]
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04W—WIRELESS COMMUNICATION NETWORKS
- H04W52/00—Power management, e.g. TPC [Transmission Power Control], power saving or power classes
- H04W52/04—TPC
- H04W52/52—TPC using AGC [Automatic Gain Control] circuits or amplifiers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Transmitters (AREA)
- Amplifiers (AREA)
- Control Of Amplification And Gain Control (AREA)
- Transceivers (AREA)
- Radar Systems Or Details Thereof (AREA)
- Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
Description
電力制御回路は、パワー検出器と比較装置の組合せから得られた出力パワーを示す信号を受取り、受取られた信号のレベルに基づいて可変利得増幅器を調節する。初期動作中、可変利得増幅器の利得は、最初に送信されるパケットにおいて最初のシンボルを送信しているときに、予め定められた、ユーザ構成可能であることが好ましい初期利得に設定される。可変利得増幅器が安定し、また、対応的に正確な出力パワーが得られることを保証するための適切な待機時間の後に、電力制御回路は、出力パワーを示す信号を、そのシンボルが送信されている最中に受取るために比較装置をストローブする。出力パワーおよびしたがって利得が非常に低い場合には、電力制御回路は予め定められた最大出力パワーに達するように、しかしこれを越えないように利得を反復的にインクリメントする。
以下、添付図面に例が示されている本発明の好ましい実施形態を詳細に参照とする。便宜上、同じまたは類似した部品を示すために同じ参照符号が図面において一貫して使用される。
Claims (9)
- 可変利得増幅器を具備し、この可変利得増幅器は、
VDD基準出力レベルを有する入力差分信号を入力し、電流を出力する誘導性負荷折返しカスコード回路と、
誘導性負荷折返しカスコード回路からの電流を入力し、接地基準出力レベルを有する出力差分信号を出力する入力電流負荷回路と、
各利得セルが入力電流負荷回路に結合され、出力差分信号を受取り、2つの電流ミラー回路をそれぞれ含んでいる複数の利得セルと、
それぞれ前記複数の利得セルの1つに結合されている複数のスイッチング回路とを具備しており、それらの各スイッチング回路は利得セルの正極性の設定に対応する正モードおよびこの正モードと逆の極性を有する利得セルの負極性の設定に対応する負モードのいずれかに利得セルの極性を設定するように動作し、正モードで動作するように設定される利得セルの数が負モードで動作するように設定される利得セルの数より多くなるように利得セルの極性が設定されている送信機中で使用される装置。 - 可変利得増幅器の1つの利得セルは正モードに設定されることも負モードに設定されることも可能であり、それによって利得の微調節が行われる請求項1記載の装置。
- 入力電流負荷回路は、カスコード構成で配列された4個のNMOSトランジスタから構成されている請求項1記載の装置。
- 入力電流負荷回路は、複数の利得セルのそれぞれによってミラーされる請求項3記載の装置。
- 複数の利得セルのそれぞれにおける各電流ミラー回路は、3個のNMOSトランジスタを含んでいる請求項1乃至3のいずれか1項記載の装置。
- 複数のスイッチング回路はそれぞれ、利得セルを正モードに設定するNMOSおよびPMOSトランジスタと、負モードに設定するNMOSおよびPMOSトランジスタとを含んでいる請求項1乃至4のいずれか1項記載の装置。
- その出力が可変利得増幅器の入力に結合されている出力を有している中間周波数アップミキサと、
その入力が可変利得増幅器の出力に結合されている無線周波数アップミキサとをさらに含んでいる請求項1記載の装置。 - 複数の利得セルは共に入力電流負荷回路に接続されて出力差分信号を受取りように構成されている請求項1記載の装置。
- 前記スイッチング回路は所望のパワーレベルを維持するように複数の利得セルの選択された一部分のものを正モードに設定している請求項1記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US25815000P | 2000-12-22 | 2000-12-22 | |
US09/927,425 US7065155B2 (en) | 2000-12-22 | 2001-08-10 | Method and apparatus for a transceiver having a constant power output |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002564831A Division JP4053885B2 (ja) | 2000-12-22 | 2001-12-17 | 一定のパワー出力を有するトランシーバのための方法および装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007251984A JP2007251984A (ja) | 2007-09-27 |
JP4680952B2 true JP4680952B2 (ja) | 2011-05-11 |
Family
ID=26946448
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002564831A Expired - Fee Related JP4053885B2 (ja) | 2000-12-22 | 2001-12-17 | 一定のパワー出力を有するトランシーバのための方法および装置 |
JP2007114228A Expired - Fee Related JP4680952B2 (ja) | 2000-12-22 | 2007-04-24 | 送信機中で使用される装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002564831A Expired - Fee Related JP4053885B2 (ja) | 2000-12-22 | 2001-12-17 | 一定のパワー出力を有するトランシーバのための方法および装置 |
Country Status (8)
Country | Link |
---|---|
US (3) | US7065155B2 (ja) |
EP (1) | EP1400013B1 (ja) |
JP (2) | JP4053885B2 (ja) |
AT (1) | ATE354206T1 (ja) |
AU (1) | AU2002245150A1 (ja) |
DE (1) | DE60126681D1 (ja) |
TW (1) | TW529158B (ja) |
WO (1) | WO2002065633A2 (ja) |
Families Citing this family (24)
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US20040198261A1 (en) * | 2002-06-28 | 2004-10-07 | Wei Xiong | Method of self-calibration in a wireless transmitter |
JP2005175819A (ja) * | 2003-12-10 | 2005-06-30 | Sony Corp | 増幅器並びに通信装置 |
TW200522335A (en) * | 2003-12-16 | 2005-07-01 | Richwave Technology Corp | Wireless output chip and related producing method with power detector |
US7171184B2 (en) | 2004-04-29 | 2007-01-30 | Atheros Communications, Inc. | Method and apparatus for a gain controlled mixer |
WO2007065478A1 (en) * | 2005-12-07 | 2007-06-14 | Freescale Semiconductor, Inc | Wireless subscriber communication unit and method of power control with back-off therefore |
US8131223B2 (en) * | 2006-04-14 | 2012-03-06 | Litepoint Corporation | System for testing an embedded wireless transceiver |
US8676188B2 (en) * | 2006-04-14 | 2014-03-18 | Litepoint Corporation | Apparatus, system and method for calibrating and verifying a wireless communication device |
US7865147B2 (en) * | 2006-04-14 | 2011-01-04 | Litepoint Corporation | System for testing an embedded wireless transceiver |
US7974596B2 (en) * | 2006-09-22 | 2011-07-05 | Silicon Laboratories Inc. | Power control scheme for a power amplifier |
US8749319B2 (en) * | 2006-11-18 | 2014-06-10 | Rfmicron, Inc. | Method and apparatus for detecting RF field strength |
US7865164B2 (en) * | 2007-09-27 | 2011-01-04 | Qualcomm Incorporated | Apparatus and methods for downconverting radio frequency signals |
EP2073383B1 (en) * | 2007-12-19 | 2011-08-10 | Sequans Communications | Amplifier arrangement |
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US8750813B2 (en) * | 2009-05-21 | 2014-06-10 | Broadcom Corporation | Method and system for a dynamic transmission gain control using a dedicated power amplifier driver in a radio frequency transmitter |
KR101581811B1 (ko) * | 2010-01-29 | 2016-01-04 | 삼성전자주식회사 | 통신 시스템에서 훈련 시퀀스 코드 송수신 장치 및 방법 |
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-
2001
- 2001-08-10 US US09/927,425 patent/US7065155B2/en not_active Expired - Lifetime
- 2001-12-17 AT AT01993306T patent/ATE354206T1/de not_active IP Right Cessation
- 2001-12-17 JP JP2002564831A patent/JP4053885B2/ja not_active Expired - Fee Related
- 2001-12-17 WO PCT/US2001/048871 patent/WO2002065633A2/en active IP Right Grant
- 2001-12-17 EP EP01993306A patent/EP1400013B1/en not_active Expired - Lifetime
- 2001-12-17 DE DE60126681T patent/DE60126681D1/de not_active Expired - Lifetime
- 2001-12-17 AU AU2002245150A patent/AU2002245150A1/en not_active Abandoned
- 2001-12-21 TW TW090131909A patent/TW529158B/zh not_active IP Right Cessation
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2005
- 2005-12-01 US US11/292,607 patent/US7170953B2/en not_active Expired - Lifetime
-
2007
- 2007-01-08 US US11/621,081 patent/US7400691B2/en not_active Expired - Lifetime
- 2007-04-24 JP JP2007114228A patent/JP4680952B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2005501438A (ja) | 2005-01-13 |
JP4053885B2 (ja) | 2008-02-27 |
US20060083331A1 (en) | 2006-04-20 |
DE60126681D1 (de) | 2007-03-29 |
WO2002065633A2 (en) | 2002-08-22 |
EP1400013A2 (en) | 2004-03-24 |
AU2002245150A1 (en) | 2002-08-28 |
EP1400013B1 (en) | 2007-02-14 |
US20020080890A1 (en) | 2002-06-27 |
ATE354206T1 (de) | 2007-03-15 |
US7065155B2 (en) | 2006-06-20 |
WO2002065633A3 (en) | 2004-01-15 |
US7400691B2 (en) | 2008-07-15 |
TW529158B (en) | 2003-04-21 |
US20070111684A1 (en) | 2007-05-17 |
JP2007251984A (ja) | 2007-09-27 |
US7170953B2 (en) | 2007-01-30 |
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