JP4679058B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4679058B2
JP4679058B2 JP2004009820A JP2004009820A JP4679058B2 JP 4679058 B2 JP4679058 B2 JP 4679058B2 JP 2004009820 A JP2004009820 A JP 2004009820A JP 2004009820 A JP2004009820 A JP 2004009820A JP 4679058 B2 JP4679058 B2 JP 4679058B2
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Prior art keywords
film
substrate
electrode
layer
tft
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Expired - Fee Related
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JP2004009820A
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Japanese (ja)
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JP2005203638A5 (enExample
JP2005203638A (ja
Inventor
舜平 山崎
誠 古野
哲弥 掛端
安弘 神保
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004009820A priority Critical patent/JP4679058B2/ja
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Publication of JP2005203638A5 publication Critical patent/JP2005203638A5/ja
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Publication of JP4679058B2 publication Critical patent/JP4679058B2/ja
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Expired - Fee Related legal-status Critical Current

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  • Thin Film Transistor (AREA)
JP2004009820A 2004-01-16 2004-01-16 半導体装置の作製方法 Expired - Fee Related JP4679058B2 (ja)

Priority Applications (1)

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JP2004009820A JP4679058B2 (ja) 2004-01-16 2004-01-16 半導体装置の作製方法

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Application Number Priority Date Filing Date Title
JP2004009820A JP4679058B2 (ja) 2004-01-16 2004-01-16 半導体装置の作製方法

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JP2005203638A JP2005203638A (ja) 2005-07-28
JP2005203638A5 JP2005203638A5 (enExample) 2007-03-01
JP4679058B2 true JP4679058B2 (ja) 2011-04-27

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JP2004009820A Expired - Fee Related JP4679058B2 (ja) 2004-01-16 2004-01-16 半導体装置の作製方法

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5186749B2 (ja) * 2006-09-29 2013-04-24 大日本印刷株式会社 有機半導体素子およびその製造方法
JP5186750B2 (ja) * 2006-09-29 2013-04-24 大日本印刷株式会社 有機半導体素子およびその製造方法
US8030655B2 (en) 2007-12-03 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device having thin film transistor
US7910929B2 (en) 2007-12-18 2011-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5527966B2 (ja) 2007-12-28 2014-06-25 株式会社半導体エネルギー研究所 薄膜トランジスタ
KR20110021654A (ko) * 2009-08-25 2011-03-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 미결정 반도체막의 제조방법, 및 반도체장치의 제조방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0277116A (ja) * 1988-03-09 1990-03-16 Tonen Corp シリコン結晶薄膜の製造方法
JPH02272774A (ja) * 1989-04-14 1990-11-07 Hitachi Ltd アクティブマトリクス回路基板
JPH06168883A (ja) * 1991-02-28 1994-06-14 Tonen Corp 多結晶シリコン薄膜の製造方法
JP2003318401A (ja) * 2002-04-22 2003-11-07 Seiko Epson Corp デバイスの製造方法、デバイス、表示装置、および電子機器

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JP2005203638A (ja) 2005-07-28

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