JP4679058B2 - Method for manufacturing semiconductor device - Google Patents

Description

  The present invention relates to a method for manufacturing a conductor film by a plasma CVD method, a semiconductor device having a circuit including a thin film transistor (hereinafter referred to as TFT) using the semiconductor film, and a method for manufacturing the semiconductor device. For example, the present invention relates to a photoelectric conversion device typified by a solar cell or a sensor, an electro-optical device typified by a liquid crystal display panel, or an electronic device in which a light emitting device is mounted as a component.

  Note that in this specification, a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics, and an electro-optical device, a light-emitting device, a semiconductor circuit, and an electronic device are all semiconductor devices.

  In recent years, a technique for forming a thin film transistor (TFT) using a semiconductor thin film (having a thickness of about several to several hundred nm) formed on a substrate having an insulating surface has attracted attention. TFTs are widely applied to electronic devices such as ICs and electro-optical devices, and development of switching elements for image display devices (display panels) is urgently required.

  Silicon is mainly used as the material for the active layer of the TFT. Conventionally, a TFT has been formed using an amorphous silicon film (amorphous silicon film).

  In the past, production techniques have been employed in which a plurality of panels are cut out from a single mother glass substrate to efficiently perform mass production. The size of the mother glass substrate was increased from 300 x 400 mm of the first generation in early 1990 to the fourth generation in 2000 and increased to 680 x 880 mm or 730 x 920 mm. Production technology has progressed so that

  At the same time as increasing the substrate size, there is an increasing demand for improved productivity and lower costs.

  In recent years, in order to obtain higher performance, an attempt has been made to fabricate a TFT having a polysilicon film as an active layer (hereinafter also referred to as a polysilicon TFT) instead of an amorphous silicon film. Since this polysilicon TFT has high field effect mobility, it is also possible to form circuits having various functions.

  In the prior art, a polysilicon film is produced by heat treatment or laser annealing (a technique for crystallizing a semiconductor film by laser irradiation) on an amorphous semiconductor film deposited by plasma CVD or low pressure CVD. ing. In the plasma CVD method, an amorphous semiconductor film can be formed at a relatively low temperature (about 400 ° C.).

  In the case of manufacturing by heat treatment, in order to crystallize the amorphous silicon film, heat treatment for 10 hours or more is required at a temperature of 600 ° C. or higher, and this treatment temperature uses a glass substrate having low heat resistance. Making it difficult. This processing temperature and processing time are not necessarily considered appropriate methods in consideration of TFT productivity.

  In the case of manufacturing by laser annealing, laser light irradiation is performed after dehydrogenation in which hydrogen in the amorphous silicon film is reduced by heat treatment. Although there is no problem of processing temperature, a laser irradiation apparatus for dealing with a large-area substrate requires a precise optical design and a large-scale optical system (lens, etc.), and equipment costs are increased. In addition, since it is difficult to irradiate a large area substrate with uniform laser light, it is difficult to obtain a uniform crystal over a wide area. Therefore, considering the productivity when using a large area substrate, it is not always considered an appropriate method.

In addition, the present applicant discloses a technique described in Patent Document 1 as one technique for obtaining a polysilicon film on a glass substrate. The technology described in this publication is a technique in which a metal element (typically nickel) that promotes crystallization is selectively added to an amorphous silicon film, and heat treatment is performed to expand polysilicon starting from the added region. A film is formed, and the size of the obtained crystal grains is very large. In addition, the above publication technique can lower the crystallization temperature of the amorphous silicon film by about 50 to 100 ° C. by the action of the metal element as compared with the case where crystallization is performed without using the metal element. The time required for this can be reduced to 1/5 to 1/10 compared to the case of performing crystallization without using a metal element, and the productivity is also excellent.
JP-A-8-78329

  If the description in Patent Document 1 is used, a glass substrate can be used. However, since a metal element that promotes crystallization is added, the metal element remains in the polysilicon film or in the film surface. However, there is a problem that the characteristics of the obtained element are varied. Therefore, a gettering process must be performed as a method for removing a metal element that promotes crystallization, and the number of processes has increased.

  In order to form a polysilicon film produced by the conventional method at a low temperature on an inexpensive transparent insulating substrate having a large area, it is not suitable for mass production.

  In addition, when using a plasma CVD method in which film formation is performed while heating at 480 ° C. or more in order to reduce the hydrogen concentration in the film, a film formed from a material having low heat resistance as a base film, typically In the case where an organic resin such as acrylic, aluminum wiring, or the like is used, conventionally, it has not been possible to form a semiconductor film including a crystal structure directly on these using a plasma CVD method.

  In addition, when sputtering is used, film formation can be performed at a low temperature, so that the film can be directly formed on an organic resin substrate or an organic resin member having a low heat resistance temperature.

  However, the sputtering method is difficult and expensive to produce a target for a large area substrate, and the chamber cannot be self-cleaned, and the chamber must be opened for maintenance. There are problems such as that the impurities in the atmosphere are easily mixed in the film during film formation, and impurities in the target are mixed in the product.

Accordingly, an object of the present invention is to provide a film forming method for directly depositing a semiconductor film including a crystal structure at a low temperature on an inexpensive large-area transparent insulating substrate. Another object is to form a semiconductor film including a crystal structure in a short processing time without increasing the number of steps.

In addition, the present invention also provides a semiconductor device using a semiconductor film including the obtained crystal structure and a manufacturing method thereof.

The present invention uses a plasma CVD method to introduce a silicide gas (monosilane, disilane, trisilane, etc.) and fluorine (or halogen fluoride gas) as source gases into a film formation chamber and generate plasma to generate a semiconductor having a crystal structure. A film is directly formed on a substrate to be processed. Rather than reducing the hydrogen concentration in the film by high-temperature heating to form a semiconductor film containing a crystal structure, in the present invention, the film growth reaction by the deposition of SiH ₃ radicals and the extraction (etching) reaction by F radicals And a semiconductor film including a crystal structure is formed. The film formation method of the present invention is a film formation method that can directly obtain a film having characteristics superior to those of an amorphous semiconductor film on a substrate to be processed, has a short tact time, and is suitable for mass production.

  According to the present invention, a semiconductor film including a crystal structure can be formed at a low temperature over an inexpensive large-area transparent insulating substrate. The low temperature here refers to a temperature within a range that an inexpensive glass substrate can withstand. Further, a semiconductor film including a crystal structure can be directly formed even when a film formed of a material having low heat resistance, typically an organic resin such as acrylic, an aluminum wiring, or the like is used as the base film. The obtained film is a semiconductor having an intermediate structure between an amorphous structure and a crystalline structure (including single crystal and polycrystal) and having a third state that is stable in terms of free energy, and has a short-range order. And a semi-amorphous semiconductor film (also referred to as a microcrystalline semiconductor film or a microcrystal semiconductor film) including a crystalline region having lattice distortion.

  In addition, the present invention realizes various semiconductor devices by using a semi-amorphous semiconductor film (also referred to as a microcrystalline semiconductor film or a microcrystalline semiconductor film) as an active layer of a TFT.

The configuration of the invention disclosed in this specification is as follows.
A semiconductor characterized by introducing a silicide gas and fluorine or halogen fluoride gas as a source gas into a film formation chamber and generating a plasma to form a semiconductor film including a crystal structure on a surface of a substrate to be processed This is a film forming method.

Further, a rare gas (one or a plurality selected from He, Ne, Ar, Kr, and Xe) may be used for diluting the carrier gas and the raw material gas.
Introducing a silicide gas, a rare gas, and fluorine or halogen fluoride gas into a film formation chamber as a source gas and generating plasma to form a semiconductor film including a crystal structure on the surface of the substrate to be processed This is a feature of a method for forming a semiconductor film.

Further, hydrogen may be used for diluting the raw material gas.
A semiconductor film including a crystal structure is formed on the surface of a substrate to be processed by introducing silicide gas, hydrogen, fluorine or halogen fluoride gas as source gases into a film formation chamber, and generating plasma. A method for forming a semiconductor film.

Further, hydrogen and a rare gas may be used for dilution of the carrier gas or the raw material gas.
A semiconductor film including a crystal structure is formed on the surface of the substrate to be processed by introducing silicide gas, rare gas, hydrogen, fluorine or halogen fluoride gas as source gases into the deposition chamber and generating plasma. A method for forming a semiconductor film, comprising:

However, when hydrogen is used, the ratio of the flow rate of hydrogen to the flow rate of the fluorine or halogen fluoride gas (H ₂ / F ₂ ) is controlled to 0.1 or less to form a semiconductor film including a crystal structure. It is a feature.

In each of the above structures, the silicide gas is any gas of monosilane, disilane, or trisilane. In each of the above structures, the halogen fluoride gas is any one of ClF, ClF ₃ , BrF, BrF ₃ , IF, and IF ₃ .

  In each of the above structures, the film formation is performed using a parallel plate plasma CVD apparatus.

In addition, the configuration of other inventions is as follows:
Monosilane gas and fluorine or halogen fluoride gas are introduced into the film forming chamber as source gases,
The ratio of the fluorine or halogen fluoride gas flow rate to the monosilane gas flow rate (F ₂ / SiH ₄ ) is 0.1 or more,
The parallel plate type electrode interval is 25 mm or more, and
A method for forming a semiconductor film including a crystal structure is characterized in that a film is formed by generating plasma under a condition where an RF power density is 0.2 W / cm ² or more.

Further, a semiconductor film obtained by the present invention is also one of the present invention, and the configuration of the present invention is as follows.
A semiconductor film having a crystal structure, which is deposited on a surface of a substrate to be processed by a plasma reaction between a silicide gas and fluorine or halogen fluoride gas using a parallel plate plasma CVD apparatus.

Further, a semiconductor device obtained by the present invention is also one of the present invention, and the configuration of the present invention is as follows.
On a substrate having an insulating surface, a gate electrode, and a gate insulating film thereon,
A semiconductor device comprising a TFT having, as an active layer, a semiconductor film including a crystal structure deposited by a plasma reaction between a silicide gas and fluorine or halogen fluoride gas on a gate insulating film .

In order to control the threshold voltage of the TFT, an element that imparts p-type to a semiconductor such as boron may be added to the active layer.
On a substrate having an insulating surface, a gate electrode, and a gate insulating film thereon,
On the gate insulating film, a semiconductor film including a crystal structure deposited by a plasma reaction between a silicide gas and fluorine or halogen fluoride gas is used as an active layer, and p-type is imparted to the semiconductor film. A semiconductor device comprising a TFT to which an element to be added is added to control a threshold voltage.

In the above structure, the gate electrode includes Ag, Al, Cu, Au, or a resin. Even after the gate electrode is formed of these low heat resistant materials, a semiconductor film including a crystal structure at a low temperature can be formed by a plasma CVD method using SiH ₄ and F ₂ as source gases.

  The semiconductor device is a video / audio bidirectional communication device or a general-purpose remote control device, an example of which is shown in FIG.

The semi-amorphous semiconductor film includes crystal grains of 0.5 to 20 nm in at least a part of the film. As for the semi-amorphous semiconductor film, the Raman spectrum is shifted to a lower wave number side than 520 cm ⁻¹ peculiar to the single crystal. In addition, diffraction peaks of (111) and (220) that are derived from the Si crystal lattice in X-ray diffraction are observed in the semi-amorphous semiconductor film. In addition, the semi-amorphous semiconductor film contains at least 1 atomic% or more of hydrogen or halogen as a neutralizing agent for dangling bonds. As a method for manufacturing a semi-amorphous semiconductor film, a silicide gas is formed by glow discharge decomposition (plasma CVD). The pressure is in the range of approximately 0.1 Pa to 133 Pa, and the power supply frequency is 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz. The substrate heating temperature may be 300 ° C. or less, preferably 100 to 250 ° C. As an impurity element in the film, impurities of atmospheric components such as oxygen, nitrogen, and carbon are desirably 1 × 10 ²⁰ cm ⁻¹ or less, and in particular, the oxygen concentration is 5 × 10 ¹⁹ / cm ³ or less, preferably 1 × 10 ¹⁹ / cm ³ or less The field effect mobility μ of a TFT using a semi-amorphous semiconductor film as an active layer is 5 to 50 cm ² / Vsec.

  Further, the present invention can be applied regardless of the TFT structure, and for example, a bottom gate type (reverse stagger type) TFT or a forward stagger type TFT can be used. Further, the TFT is not limited to a single-gate TFT, and may be a multi-gate TFT having a plurality of channel formation regions, for example, a double-gate TFT.

  According to the present invention, a semiconductor film including a crystal structure with excellent characteristics can be directly formed at a low temperature on an inexpensive large-area transparent insulating substrate at a high film formation rate. In particular, when a TFT having a gate electrode made of a material having low heat resistance, for example, a metal wiring containing a resin, a semiconductor film including a crystal structure with excellent characteristics above the gate electrode without exceeding the heat resistant temperature of the gate electrode. To form an active layer of a TFT. In addition, a semiconductor film including a crystal structure can be directly formed over a plastic substrate.

  Embodiments of the present invention will be described below.

(Embodiment 1)
A cross-sectional view of a processing chamber (also referred to as a chamber) of a parallel plate type plasma CVD apparatus used in the present invention will be described with reference to FIG. In FIG. 1, in a grounded chamber 108, a first electrode (upper electrode, shower electrode, high-frequency electrode) 121 connected to a high-frequency power source 105 and a second electrode (lower electrode, ground electrode) connected to a high-frequency power source 105. ) 125 is provided. A substrate 127 to be processed is placed on the second electrode.

  The first electrode 121 has a hollow structure, and the source gas supplied from the supply system 106a passes through the electrode, is ionized, and is supplied into the chamber. Although only one supply system is shown here, a plurality of gas supply systems can be provided as necessary.

  The chamber is provided with an exhaust system 107a for exhausting the exhaust gas after the reaction. In the present embodiment, the electrode structure is a hollow structure (a structure in which a plurality of shower plates overlap to disperse gas, a so-called shower head structure), but is not limited to this structure. A supply system may be provided separately from the first electrode. Further, the supply system 106a and the exhaust system 107a are provided with valves (106c, 107c) to control the gas pressure to be supplied and the pressure in the chamber.

  The heater 126 is provided in contact with the second electrode 125, but is not limited to this structure. Further, a heater (not shown) may be provided for the first electrode 121. Further, a heater may be provided on the outer wall of the chamber so that the chamber has a hot wall structure.

  In addition, a window (not shown) is provided on the side surface of the chamber, and the window can be opened and closed to transfer the substrate into the chamber from a cassette chamber in which the substrate is stored via a transport mechanism such as a robot arm. it can.

  Next, a film forming method will be described with reference to FIG. In this embodiment, a method for forming a silicon film having a crystal structure directly on a glass substrate will be described.

Silicide gas (monosilane, disilane, trisilane, etc.) and fluorine (or halogen fluoride gas) are used as source gases. Examples of the halogen fluoride gas include ClF, ClF ₃ , BrF, BrF ₃ , IF, and IF ₃ . Among them, the combination of monosilane gas and fluorine gas is an inexpensive gas combination and is suitable for mass production. Here, an example in which monosilane gas and fluorine gas are used as the source gas will be described.

Further, as other fluorine-based gas, fluorinated monosilane (SiH _m F _n : where m + n = 4) and tetrafluorosilane (SiF ₄ ) can be used, but the gas becomes expensive. Further, since the bond (dissociation) energy of Si—H is 76 kcal / mol, the bond (dissociation) energy of Si—F is as high as 142 kcal / mol. The energy consumption at will increase.

The film formation conditions were as follows: the pressure in the chamber was 1.33 × 10 ¹ to 1.33 × 10 ³ Pa (1 × 10 ⁻¹ to 1 × 10 ¹ torr), the film formation temperature was 80 to 600 ° C., The power frequency of the high frequency power source is set to 10 to 500 MHz. In the case where the substrate to be processed or the base film is formed of a material having low heat resistance, the temperature is set to 80 to 300 ° C.

  As shown in FIG. 1, a silicide gas and fluorine are introduced into a chamber from a supply system, a power switch 122 is connected, a high-frequency voltage is applied to the electrodes, and plasma 123 is generated. A chemically active excited species such as silicide or fluorine ions or radicals generated in the plasma reacts to form a silicon film 124 having a crystal structure as a product.

It is considered that the film growth reaction due to the deposition of SiH ₃ radicals and the extraction (etching) reaction due to F radicals occur competitively, whereby the Si film network is reconfigured and a silicon film including a crystal structure is formed. .

  There are actually a wide variety of reactions. Here, an example of a reaction that occurs in the chamber is shown.

  The gas decomposition reaction due to the high frequency can be expressed by Equations 1 and 2.

  Further, the reaction in the gas phase can be expressed by Equation 3.

The SiH ₃ radicals generated in Equation ₃ are generally said to be the main chemical species for Si film growth. Further, in Equation 3, since a highly corrosive fluorine-based gas such as HF is formed, in the plasma CVD apparatus, it is desirable to cover the inner surface of the apparatus with a material having excellent corrosion resistance.

  Further, the hydrogen atom extraction reaction on the silicon film surface can be expressed by the following equations (4), (5), and (6).

  Further, the bond (etching reaction) to the dangling bond on the surface of the silicon film can be expressed by Equation 7.

Actual film formation conditions (gas flow rate, RF power, gap between electrodes) were used for film formation, and the experimental results (film thickness rate, Raman optical characteristics (Raman peak (Pc, Pa), Raman half width ( Table 1 shows Wc, Wa), integrated intensity (Ic, Ia), etc.). A substrate to be processed on which a silicon oxide film 100 nm by LPCVD was previously formed was used on the surface. The film formation is performed with an electrode area of 380 cm ² , an RF power source frequency of 27 MHz, an upper heater set temperature of 65 ° C., and a lower heater set temperature of 300 ° C.

  In Table 1, when the spectrum obtained by the Raman scattering spectroscopy is separated into two exponential curves, the peak of the low wavenumber side curve (the center position of the curve) is Pa, and the Raman half width of the low wavenumber side curve is Wa. The integrated intensity of the low wavenumber side curve is Ia. Further, the peak of the high wave number side curve is Pc, the Raman half width of the high wave number side curve is Wc, and the integrated intensity of the high wave number side curve is Ic.

From Table 1, it can be confirmed that a silicon film having a crystal structure called a semi-amorphous silicon film, a microcrystalline silicon film, or a microcrystalline silicon film is formed at a low temperature of 300 ° C. The silicon film including the obtained crystal structure has Pa of 487 to 490 cm ⁻¹ , Pc of 514 to 517 cm ⁻¹ , Wa of 42 to 47.3 cm ⁻¹ , and Wc of 9.6 to 14.7 cm ^−1. It is a thin film. In addition, the film formation rate (deposition rate) is 5 nm / min to 20 nm / min. The film thickness is after 10 minutes of film formation.

Moreover, monosilane gas is 100%, fluorine gas is a mixed gas diluted with He, fluorine content is 10.1%, and total content of impurities (CF ₄ , HF, air, etc.) is 0.1%. And the purity is 99.9%.

  In addition, FIG. 2 shows Raman spectrum data of a sample (Sample 9) having the highest crystallization rate.

As a comparative example, Table 2 shows experimental results (comparative samples 1 to 3) in which an amorphous silicon film was formed at a pressure of 0.3 Torr among film forming conditions. From these results, it can be seen that the higher the F ₂ partial pressure, total pressure, and RF power, the easier it is to crystallize.

  In addition, here, three systems of gas supply are performed using Ar as the carrier gas, but it is not particularly necessary to use the carrier gas, and the film formation can be performed only with the two systems of gas supply. By using a few gas systems, it is possible to easily adjust the film forming conditions.

Further, hydrogen gas may be supplied to supply three systems of gas, or a carrier gas may be supplied to supply four systems of gas. However, when supplying hydrogen gas, it is preferable to control the flow rate ratio of hydrogen to fluorine (H ₂ : F ₂ ) to 1:10 or to lower the flow rate to reduce the hydrogen flow rate.

  According to the present invention, a semiconductor film including a crystal structure with excellent characteristics can be directly formed at a low temperature on an inexpensive large-area transparent insulating substrate at a high film formation rate.

(Embodiment 2)
In order to improve tact time and improve film thickness uniformity, a plasma CVD apparatus in which a heater is provided on the outer wall of the chamber and a chamber with a hot wall structure inside the chamber is vertically stacked is used. Thus, film formation can be performed.

  FIG. 3 shows an example of a chamber having a hot wall structure. The chamber 208a shown in FIG. 3 is different from the first embodiment in the heater installation position. A heater 226 is provided on the outer wall of the chamber, and the chamber has a hot wall structure.

  In FIG. 3, 208a is a grounded chamber, 205a is a high frequency power source, 221 is a hollow first electrode (upper electrode, shower electrode, high frequency electrode) through which the source gas passes through the electrode, and 225 is grounded. The second electrode (lower electrode, ground electrode), 106a is a supply system, 107a is an exhaust system, and 106c and 107c are valves.

  In addition, since the description regarding the chamber structure is partly described in the first embodiment, the same portions are the same, and thus detailed description thereof is omitted here.

  FIG. 4 shows a perspective view of an example of a plasma CVD apparatus in which the chambers shown in FIG. 3 are arranged in the vertical direction, and FIG. 5 shows a top view thereof.

  4 and 5 includes a film formation chamber and a transfer chamber, a transfer chamber 202b is disposed between the film formation chambers 204a and 204b, and the transfer chambers 202a and 202b are disposed adjacent to each other. It has a structure. Each film forming chamber is provided with ten chambers 208a and 208b arranged in the vertical direction, and each of the chambers 208a and 208b is supplied with a supply system 206a and 206b for supplying a film forming gas, and exhaust gas is exhausted. Exhaust systems 207a and 207b and power supplies 205a and 205b.

  This apparatus is characterized in that in each of the film forming chambers 204a and 204b, all the supply systems of the plurality of chambers 208a and 208b are connected to one supply source. Similarly, all the exhaust systems of the plurality of chambers 208a and 208b are connected to one exhaust port. This feature makes it possible to easily arrange the supply systems 206a and 206b and the exhaust systems 207a and 207b in spite of the plurality of chambers 208a and 208b being stacked in the vertical direction in this apparatus. The film formation chambers 204a and 204b are provided with an exhaust system (not shown) for reducing the pressure in each film formation chamber. By controlling the pressure in the chamber and the pressure in the film formation chamber, film formation and cleaning in the chamber can be performed alternately, and film formation can be performed efficiently.

  As in the first embodiment, a silicide gas (monosilane, disilane, trisilane, or the like) and fluorine (or halogen fluoride gas) are introduced as source gases, and plasma is generated to form a semiconductor film having a crystal structure. It is possible to form a film directly.

  In FIG. 5, a substrate having an insulating surface such as a glass substrate of a desired size or a resin substrate typified by a plastic substrate is set in the cassette chambers 201a and 201b. As the substrate transfer method, horizontal transfer is adopted in the equipment shown in the figure, but when using a meter angle substrate of the fifth generation or later, vertical transfer with the substrate placed vertically is used for the purpose of reducing the area occupied by the transfer machine. You may go.

  Each of the transfer chambers 202a and 202b is provided with transfer mechanisms (robot arms) 203a and 203b. The substrate set in the cassette chambers 201a and 201b is transferred to the film forming chambers 204a and 204b by the transfer mechanism. Then, in the chambers 208a and 208b of the film formation chambers 204a and 204b, predetermined processing is performed on the processing target surface of the transferred substrate. In FIG. 5, a plurality of transfer chambers are provided, but one transfer chamber may be provided.

  Here, a batch type apparatus that processes several tens of substrates at a time is illustrated, but the present invention can also be applied to a single wafer type apparatus that processes substrates one by one.

  As shown in FIG. 4, by forming a film with a film forming apparatus having a plurality of chambers, films formed under the same conditions on a large number of substrates can be formed at the same time. For this reason, it becomes possible to reduce the variation between substrates, and to improve a yield. In addition, throughput can be improved.

  The present invention having the above-described configuration will be described in more detail with the following examples.

  In this embodiment, a method for manufacturing an active matrix liquid crystal display device using an inverted staggered TFT as a switching element will be described. FIG. 6 shows a cross section of the manufacturing process.

First, a base layer 11 is formed on the substrate 10 for improving adhesion to a material layer formed later by a droplet discharge method. Since the base film 11 may be formed extremely thin, it does not necessarily have a layer structure and can be regarded as a base pretreatment. Photocatalytic substances (titanium oxide (TiO _x ), strontium titanate (SrTiO ₃ ), cadmium selenide (CdSe), potassium tantalate (KTaO ₃ ), cadmium sulfide (CdS), zirconium oxide (ZrO ₂ ), niobium oxide by spraying (Nb ₂ O ₅ ), zinc oxide (ZnO), iron oxide (Fe ₂ O ₃ ), tungsten oxide (WO ₃ ) is dropped on the entire surface, or an organic material (polyimide, acrylic, Alternatively, a coating insulating film using a material in which a skeleton structure is configured by a bond of silicon (Si) and oxygen (O), and the substituent has at least one of hydrogen, fluorine, an alkyl group, and aromatic hydrocarbon ) May be selectively formed.

  The photocatalytic substance refers to a substance having a photocatalytic function, and emits light in the ultraviolet region (wavelength of 400 nm or less, preferably 380 nm or less) to cause photocatalytic activity. When a conductor mixed in a solvent is discharged onto the photocatalyst material by an ink jet method, fine drawing can be performed.

For example, before TiO _x is irradiated with light, it is lipophilic but not hydrophilic, that is, it is in a water-repellent state. By performing light irradiation, photocatalytic activity occurs, and instead of hydrophilicity, there is no lipophilicity, that is, oil repellency. Depending on the light irradiation time, both hydrophilicity and lipophilicity can be achieved.

  In addition, hydrophilicity refers to the state which is easy to get wet with water, and a contact angle of 30 degrees or less, especially a contact angle of 5 degrees or less is called super hydrophilicity. On the other hand, water repellency refers to a state in which it is difficult to wet with water, and refers to a contact angle of 90 degrees or more. Similarly, “lipophilic” refers to a state that is easily wetted with oil, and “oil repellency” refers to a state that is difficult to wet with oil. The contact angle refers to an angle formed by the tangent line between the formation surface and the droplet at the edge of the dropped dot.

  That is, the region irradiated with light (hereinafter referred to as an irradiation region) becomes a hydrophilic region or super hydrophilicity (hereinafter simply referred to as hydrophilicity). At this time, light irradiation is performed so that the width of the irradiation region becomes a desired wiring width. Thereafter, dots in which a conductor is mixed in an aqueous solvent are ejected from the irradiation region toward the irradiation region by an inkjet method. Then, it is possible to form a wiring that is smaller than the diameter of the dots ejected simply by the ink jet method, that is, has a narrow width. This is because the irradiation region is formed so as to have a desired wiring width, so that it is possible to prevent the discharged dots from spreading on the formation surface. Furthermore, even when dots are ejected with a slight shift, wiring can be formed along the irradiation region, and accurate position control of wiring formation is possible.

  When an aqueous solvent is used, it is preferable to add a surfactant so that it can be smoothly discharged from an inkjet nozzle.

  Further, when discharging a conductor mixed in an oil (alcohol) -based solvent, the conductor is discharged to a region where light irradiation is not performed (hereinafter referred to as a non-irradiation region), or from above the non-irradiation region or By ejecting dots toward the non-irradiated area, wiring can be formed in the same manner. That is, light irradiation may be performed by forming light irradiation on both ends of a region where wiring is to be formed, that is, surroundings surrounding a region where wiring is to be formed. At this time, since the irradiated region has oil repellency, dots having a conductor mixed in an oil (alcohol) -based solvent are selectively formed in the non-irradiated region. That is, light irradiation is performed so that the width of the non-irradiation region becomes a desired wiring width.

  As the oil (alcohol) -based solvent, a nonpolar solvent or a low polarity solvent can be used. For example, terpineol, mineral spirit, xylene, toluene, ethylbenzene, mesitylene, hexane, heptane, octane, decane, dodecane, cyclohexane, or cyclooctane can be used.

  Furthermore, the photocatalytic substance can be doped with transition metals (Pd, Pt, Cr, Ni, V, Mn, Fe, Ce, Mo, W, etc.) to improve the photocatalytic activity or visible light region (wavelength 400 nm to 800 nm). Photocatalytic activity can be caused by the light. This is because transition metals can form a new level in the forbidden band of an active photocatalyst having a wide band gap, and can extend the light absorption range to the visible light region. For example, an acceptor type such as Cr or Ni, a donor type such as V or Mn, an amphoteric type such as Fe, and Ce, Mo, W, or the like can be doped. Thus, since the wavelength of light can be determined by the photocatalytic substance, the light irradiation refers to irradiating light having a wavelength for activating the photocatalytic substance of the photocatalytic substance.

In addition, when the photocatalytic substance is heated and reduced in a vacuum or hydrogen reflux, oxygen defects are generated in the crystal. Thus, oxygen defects play the same role as electron donors even without doping with a transition element. In particular, in the case of forming by the sol-gel method, oxygen defects are present from the beginning, so that reduction is not necessary. Further, oxygen defects can be formed by doping a gas such as N ₂ .

In addition, here, an example of performing the base pretreatment for improving adhesion when discharging a conductive material onto a substrate is shown, but there is no particular limitation, and a material layer (for example, an organic layer, an inorganic layer, a metal layer) Alternatively, in the case where a material layer (for example, an organic layer, an inorganic layer, or a metal layer) is further formed on the discharged conductive layer by a droplet discharge method, for improving the adhesion between the material layer and the material layer. A TiO _x film forming process may be performed. That is, when drawing is performed by discharging a conductive material by a droplet discharge method, it is desirable that the base pretreatment is sandwiched between the upper and lower interfaces of the conductive material layer to improve the adhesion.

  Note that the substrate 10 has heat resistance capable of withstanding the processing temperature in this manufacturing process, in addition to an alkali-free glass substrate manufactured by a fusion method or a float method, such as barium borosilicate glass, aluminoborosilicate glass, or aluminosilicate glass. A plastic substrate or the like can be used. In the case of a reflective liquid crystal display device, a semiconductor substrate such as single crystal silicon, a metal substrate such as stainless steel, or a substrate provided with an insulating layer on the surface of a ceramic substrate may be applied.

  Next, after dropping by a droplet discharge method, typically an ink jet method, baking is performed in an oxygen atmosphere to form a metal wiring 12 serving as a gate electrode or a gate wiring. Similarly, the wiring 40 extending to the terminal portion is also formed. Although not shown here, a capacitor electrode or a capacitor wiring for forming a storage capacitor is also formed.

  These wiring materials include gold (Au), silver (Ag), copper (Cu), platinum (Pt), palladium (Pd), tungsten (W), nickel (Ni), tantalum (Ta), bismuth (Bi). ), Lead (Pb), indium (In), tin (Sn), zinc (Zn), titanium (Ti), or aluminum (Al), alloys thereof, dispersible nanoparticles thereof, or silver halide Use fine particles. In particular, since it is preferable to reduce the resistance of the gate wiring, it is preferable to use a material in which any one of gold, silver, and copper is dissolved or dispersed in consideration of the specific resistance value. More preferably, low resistance silver or copper is used. However, when silver or copper is used, it is preferable to provide a barrier film together to prevent impurity diffusion. The solvent corresponds to esters such as butyl acetate, alcohols such as isopropyl alcohol, organic solvents such as acetone, and the like. The surface tension and the viscosity are appropriately adjusted by adjusting the concentration of the solvent or adding a surfactant or the like.

  The diameter of the nozzle used in the droplet discharge method is set to 0.02 to 100 μm (preferably 30 μm or less), and the discharge amount of the composition discharged from the nozzle is 0.001 pl to 100 pl (preferably 10 pl or less). ) Is preferable. There are two types of droplet discharge methods, an on-demand type and a continuous type, and either method may be used. Furthermore, the nozzle used in the droplet discharge method includes a piezoelectric method that utilizes the property of being deformed by voltage application of a piezoelectric body, and a heating method that discharges the composition by boiling the composition with a heater provided in the nozzle. Either of these methods may be used. The distance between the object to be processed and the nozzle outlet is preferably as close as possible in order to drop it at a desired location, and is preferably set to about 0.1 to 3 mm (preferably 1 mm or less). . While maintaining the relative distance between the nozzle and the object to be processed, one of the nozzle and the object to be processed moves to draw a desired pattern. In addition, plasma treatment may be performed on the surface of the object to be processed before the composition is discharged. This is to take advantage of the fact that the surface of the workpiece becomes hydrophilic or lyophobic when the plasma treatment is performed. For example, it becomes hydrophilic with respect to pure water and becomes lyophobic with respect to a paste using an alcohol as a solvent.

  The step of discharging the composition may be performed under reduced pressure. This is because the solvent of the composition volatilizes before the composition is discharged and landed on the object to be processed, and the subsequent drying and firing steps can be omitted or shortened. After discharge of the composition, one or both of drying and baking steps are performed under normal pressure or reduced pressure by laser light irradiation, rapid thermal annealing, a heating furnace, or the like. The drying and firing steps are both heat treatment steps. For example, the drying is performed at 100 degrees for 3 minutes, and the firing is performed at 200 to 350 degrees for 15 minutes to 120 minutes. Time is different. In order to satisfactorily perform the drying and firing steps, the substrate may be heated, and the temperature at that time depends on the material of the substrate or the like, but is 100 to 800 degrees (preferably 200 to 350 degrees). And By this step, the solvent in the composition is volatilized or the dispersant is chemically removed, and the surrounding resin is cured and shrunk to accelerate fusion and fusion. The atmosphere is an oxygen atmosphere, a nitrogen atmosphere or air. However, it is preferable to perform in an oxygen atmosphere in which the solvent in which the metal element is decomposed or dispersed is easily removed.

  By performing the above-mentioned base film formation or base pretreatment, the adhesion of the metal layer in the droplet discharge method to be formed later is greatly improved. Even if immersed in dilute hydrofluoric acid (1/100 dilution), it takes 1 minute or more. It can withstand, and sufficient adhesion is secured even in a tape peeling test.

  Next, the gate insulating film 13 is formed in a single layer or a stacked structure by using a plasma CVD method or a sputtering method. Desirably, the gate insulating film 13 is a three-layer structure including an insulator layer made of silicon nitride, an insulator layer made of silicon oxide, and an insulator layer made of silicon nitride. However, the metal wiring 12 is prevented from being damaged at the deposition temperature of the gate insulating film 13. Note that in order to form a dense insulating film with little gate leakage current at a low deposition temperature, a rare gas element such as argon is preferably contained in a reaction gas and mixed into the formed insulating film.

Next, the semiconductor film 14a is formed. In this embodiment, a semi-amorphous semiconductor film obtained by a PCVD method using SiH ₄ and F ₂ as source gases is formed. A semi-amorphous semiconductor film can be directly deposited at a low temperature at a high deposition rate. In accordance with the film formation method described in Embodiment 1, a semiconductor film including a crystal structure with excellent characteristics is formed above the metal wiring 12 without exceeding the heat-resistant temperature of the metal wiring 12. Note that a semi-amorphous silicon film is preferable because crystallinity can be provided by an interface with a base.

  Next, the insulator layer 16 is formed by plasma CVD or sputtering. Note that the patterning may be performed by etching using a mask formed by a droplet discharge method or photolithography. This insulator layer 16 is left on the semiconductor layer opposite to the gate electrode layer to form a channel protective layer. The insulator layer 16 is formed of a dense film in order to ensure the cleanliness of the interface and prevent the semiconductor layer from being contaminated with impurities such as organic substances, metal substances, and water vapor. Is preferred. In the glow discharge decomposition method, a silicon nitride film formed by diluting a silicide gas with a silicide gas such as argon 100 times to 500 times can form a dense film even at a film forming temperature of 100 ° C. or less. It is preferable.

  Next, a mask 15 covering the insulator layer 16 is formed by a droplet discharge method. (FIG. 6A) The mask 15 uses a resin material such as an epoxy resin, an acrylic resin, a phenol resin, a novolac resin, an acrylic resin, a melamine resin, or a urethane resin. Also, using organic materials such as benzocyclobutene, parylene, flare, permeable polyimide, compound materials made by polymerization of siloxane polymers, composition materials containing water-soluble homopolymers and water-soluble copolymers, etc. And formed by a droplet discharge method. Alternatively, a commercially available resist material containing a photosensitizer may be used. For example, a novolak resin that is a typical positive resist and a naphthoquinonediazide compound that is a photosensitizer, a base resin that is a negative resist, diphenylsilanediol, and An acid generator or the like may be used. Whichever material is used, the surface tension and viscosity are appropriately adjusted by adjusting the concentration of the solvent or adding a surfactant or the like.

  Next, the semiconductor film 14a other than the region covered with the mask 15 is removed by dry etching or wet etching to form a semiconductor layer 14b to be an active layer.

  Next, after removing the mask 15, an n-type semiconductor film 17 is formed on the entire surface. Note that in the case where an n-type semiconductor film is provided, the contact resistance between the semiconductor film and the electrode is preferably low, but it may be provided as necessary. The n-type semiconductor film 17 may be formed by a PCVD method using silane gas and phosphine gas, and can be formed by an amorphous semiconductor film or a semi-amorphous semiconductor film.

  Next, a composition containing a conductive material (Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminum), etc.)) is selectively discharged by a droplet discharge method, and the source Wiring or drain wirings 18a and 18b are formed. Similarly, the connection wiring 41 is also formed in the terminal portion. (Fig. 6 (B))

  Next, the n-type semiconductor film 17 is etched in a self-aligning manner using the source wirings or drain wirings 18a and 18b as masks to form source or drain regions 19a and 19b. At this stage, the channel stop type TFT 30 is completed. The insulator layer 16 functions as an etching stopper for the n-type semiconductor film.

  Next, a portion other than the terminal portion is covered with a resin such as a resist using a shadow mask, and in the terminal portion, the gate insulating film 13 is etched using the connection wiring 41 as a mask to expose a part of the wiring 40. Further, instead of the shadow mask, a resist mask may be formed by a screen printing method to form an etching mask. Note that the gate insulating film 13 may be etched without covering the portions other than the terminal portions with a resist. However, in the pixel portion, the gate insulating film in a region that does not overlap with the source wirings or the drain wirings 18a and 18b is etched. There is a problem in that the insulator layer 16 may be etched to expose the semiconductor layer.

  Next, a conductive material 42 for connecting the wiring 40 extending to the terminal portion and the connection wiring 41 is formed. The conductive material 42 may be formed by a printing method or a droplet discharge method. When the droplet discharge method is used, a conductive material (Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminum), etc.) containing a conductive material is selectively discharged to conduct electricity. An object 42 is formed.

  Next, a convex portion (pillar) 20 made of a conductive member is formed on a part of the source wiring or drain wiring 18a. The convex portion (pillar) 20 repeats discharge and firing of a composition containing a conductive material (Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminum), etc.). Stack by. Similarly, a convex portion (pillar) 43 is also formed on the connection wiring 41. Alternatively, the convex portion (pillar) 20 may be formed by patterning a metal film obtained by sputtering, and in this case, the convex portion (pillar) has a columnar shape.

  Next, a flat interlayer insulating film 21 is formed by a coating method. (FIG. 6C) A flat interlayer insulating film formed by a coating method refers to an interlayer insulating film formed by applying a liquid composition. As a flat interlayer insulating film formed by a coating method, a so-called coated silicon oxide film (Spin on Glass, which forms a film by heat treatment after coating an organic resin such as acrylic or polyimide, or an insulating film material dissolved in an organic solvent) (Hereinafter also referred to as “SOG”), and materials that form a siloxane bond by firing such as a siloxane polymer. The interlayer insulating film 21 is not limited to a coating method, and an inorganic insulating film such as a silicon oxide film formed by a vapor deposition method or a sputtering method can also be used. Further, after a silicon nitride film is formed as a protective film by a PCVD method or a sputtering method, a flat insulating film by a coating method may be stacked.

  Further, the interlayer insulating film 21 may be formed by a droplet discharge method. In addition, the interlayer insulating film 21 may be formed by the droplet discharge method before the convex portions (pillars) 20 and 43 are subjected to the main baking, and the main baking may be performed at the same time.

  When the flat interlayer insulating film 21 is formed by a coating method or a droplet discharge method, it is preferable to perform the main baking after flattening the micro unevenness on the surface with an air knife instead of a squeegee.

  Next, the interlayer insulating film on the convex portions (pillars) 20 and 43 is removed by etching back the entire surface to expose the convex portions (pillars) 20 and 43. As another method, the convex portions (pillars) 20 and 43 are exposed by grinding the interlayer insulating film by chemical mechanical polishing (CMP) and then etching back the entire surface of the interlayer insulating film. Can do.

Next, a pixel electrode 23 in contact with the convex portion (pillar) 20 is formed on the interlayer insulating film 22. Similarly, a terminal electrode 44 in contact with the convex portion (pillar) 43 is also formed. In the case of manufacturing a transmissive liquid crystal display panel, indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), zinc oxide (ZnO), tin oxide ( A predetermined pattern made of a composition containing SnO ₂ ) or the like may be formed and baked to form the pixel electrode 23 and the terminal electrode 44. In the case of manufacturing a reflective liquid crystal display panel, the pixel electrode 23 and the terminal electrode 44 are made of Ag (silver), Au (gold), Cu (copper), W (tungsten), Al ( It can be formed using a composition mainly composed of metal particles such as (aluminum). As another method, a transparent conductive film or a light reflective conductive film may be formed by a sputtering method, a mask pattern may be formed by a droplet discharge method, and a pixel electrode may be formed by combining etching. Note that the surface of the interlayer insulating film 22 is flattened by etch back or CMP, and a flat pixel electrode 23 can be formed.

  Note that FIG. 7 shows an enlarged top view of a part of the pixel portion. FIG. 7 shows a state where the pixel electrode is being formed. In the left pixel, the pixel electrode is formed, but in the right pixel, the pixel electrode is not formed. In FIG. 7, a diagram cut along a solid line A-A ′ corresponds to the cross section of the pixel portion in FIG. 6D, and the same reference numerals are used for portions corresponding to FIG. 6D. In addition, the capacitor wiring 31 is provided, and the storage capacitor is formed of the pixel electrode 23 and the capacitor wiring 31 overlapping the pixel electrode, using the gate insulating film as a dielectric.

  Through the above steps, a TFT substrate for a liquid crystal display panel in which a bottom gate type (also referred to as an inverted stagger type) TFT and a pixel electrode are formed on the substrate 10 is completed.

  Next, an alignment film 24 a is formed so as to cover the pixel electrode 23. For the alignment film 24a, a droplet discharge method, a screen printing method, or an offset printing method may be used. Thereafter, a rubbing process is performed on the surface of the alignment film 24a.

  The counter substrate 25 is provided with a color filter composed of a colored layer 26a, a light shielding layer (black matrix) 26b, and an overcoat layer 27. Further, a counter electrode composed of a transparent electrode and an alignment film 24b are formed thereon. . Then, a sealing material (not shown) as a closed pattern is formed so as to surround a region overlapping with the pixel portion by a droplet discharge method. Here, an example of drawing a sealing material with a closed pattern in order to drip liquid crystal is shown, but a dip type (pumping) in which a sealing pattern having an opening is provided and liquid crystal is injected using a capillary phenomenon after the TFT substrate is bonded together Formula) may also be used.

  Next, liquid crystal is dropped under reduced pressure so that bubbles do not enter, and both substrates are bonded together. The liquid crystal is dropped once or a plurality of times in the closed loop seal pattern. As the alignment mode of the liquid crystal, a TN mode in which the alignment of liquid crystal molecules is twisted by 90 ° from the incident light to the emitted light is often used. When a TN mode liquid crystal display device is manufactured, the substrates are bonded so that the rubbing directions of the substrates are orthogonal.

  Note that the distance between the pair of substrates may be maintained by spraying spherical spacers, forming columnar spacers made of resin, or including a filler in the sealing material. The columnar spacer is made of an organic resin material mainly containing at least one of acrylic, polyimide, polyimide amide, and epoxy, or any one of silicon oxide, silicon nitride, and silicon oxynitride, or a laminated film thereof. It is characterized by being an inorganic material.

  Next, the unnecessary substrate is divided. In case of multi-chamfering, each panel is divided. In the case of one-sided chamfering, the dividing step can be omitted by attaching a counter substrate that has been cut in advance.

  Then, the FPC 46 is pasted through the anisotropic conductor layer 45 using a known technique. The liquid crystal module is completed through the above steps. (FIG. 6E) If necessary, an optical film is attached. In the case of a transmissive liquid crystal display device, the polarizing plate is attached to both the active matrix substrate and the counter substrate.

  As described above, in this embodiment, a semi-amorphous silicon film serving as an active layer is formed by a plasma CVD method at a film forming temperature of 300 ° C. and a film forming speed of 5 nm / min to 20 nm / min. By forming a film with this, the cost can be reduced and the process time can be shortened. Moreover, by reducing the light exposure process using a photomask using the convex part (pillar) 43, a process can be simplified and process time can be shortened. In addition, by forming various patterns directly on the substrate using the droplet discharge method, a liquid crystal display panel can be easily manufactured even if a glass substrate of the fifth generation or more with one side exceeding 1000 mm is used. be able to.

  FIG. 8 shows an example of a droplet discharge device (typically an ink jet device) corresponding to a large substrate with three rows in the scanning direction. In FIG. 8, 1500 is a large area substrate, 1504 is an imaging means, 1507 is a stage, 1511 is a marker, and 1503 is a region where one panel is formed. The heads 1505a, 1505b, and 1505c having the same width as one panel are provided, and the pattern of the material layer is appropriately formed by zigzag or reciprocating the heads.

  The individual heads 1505a, 1505b, and 1505c are connected to control means (not shown), which can draw a preprogrammed pattern by being controlled by a computer (not shown). The drawing timing may be performed with reference to a marker 1511 formed on the large-area substrate 1500, for example. Alternatively, the reference point may be determined based on the edge of the large area substrate 1500. This is detected by an image pickup means 1504 such as a CCD, and converted into a digital signal by an image processing means (not shown) is recognized by a computer to generate a control signal and send it to the control means. Of course, the information on the pattern to be formed on the large-area substrate 1500 is stored in a storage medium (not shown). Based on this information, a control signal is sent to the control means, and the individual heads 1505a and 1505b are sent. , 1505c can be individually controlled.

  In FIG. 8, heads 1505a, 1505b, and 1505c arranged in three rows with respect to the scanning direction may be capable of forming different material layers, or may eject the same material. When the same material is discharged by three heads to form an interlayer insulating film pattern, the throughput is improved.

  Note that the apparatus shown in FIG. 8 can scan with the head portion fixed and the large-area substrate 1500 moved, or with the large-area substrate 1500 fixed and the substrate 1500 fixed.

  Further, in this embodiment, a process in which a light exposure process using a photomask is not used is shown, but the present invention is not particularly limited, and a part of patterning may be performed by a light exposure process using a photomask.

  In this embodiment, an example of manufacturing an active matrix liquid crystal display device using a channel etch type TFT will be described. FIG. 9 shows a cross section of the manufacturing process of this embodiment.

  First, as in Example 1, a base film 411, a metal wiring 412, and a wiring 440 extending to a terminal portion are formed over a substrate 410, and a gate insulating film 413 is further formed.

Next, a semiconductor film 414 a and an n-type semiconductor film 417 are stacked. As the semiconductor film 414a, a semi-amorphous semiconductor film obtained by the deposition method described in Embodiment 1 or 2 is used. The n-type semiconductor film 417 may be formed by a PCVD method using silane gas and phosphine gas, and can be formed by an amorphous semiconductor film or a semi-amorphous semiconductor film. Note that the gate insulating film 413, the semiconductor film 414a, and the n-type semiconductor film 417 can be formed successively without being exposed to the air by using a PCVD method. By not exposing to the atmosphere, contamination of impurities can be prevented.

Next, a mask 415 for patterning the semiconductor layer is formed by a droplet discharge method. (FIG. 9A) The mask 15 uses a resin material such as an epoxy resin, an acrylic resin, a phenol resin, a novolac resin, an acrylic resin, a melamine resin, or a urethane resin. Whichever material is used, the surface tension and viscosity are appropriately adjusted by adjusting the concentration of the solvent or adding a surfactant or the like.

  Next, the semiconductor film 414a and the n-type semiconductor film 417 other than the region covered with the mask 415 are removed by dry etching or wet etching to form a semiconductor layer to be an active layer.

  Next, a layer 416 made of an insulating material or a conductive material that covers the edge of the semiconductor layer is formed by a droplet discharge method in order to improve coverage.

  Next, by a droplet discharge method, a composition containing a conductive material (Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminum), etc.) is selectively discharged, Source wirings or drain wirings 418a and 418b are formed.

  Next, a mask for removing part of the semiconductor layer which overlaps with the metal wiring 412 which is the gate electrode and the gate insulating film 413 is formed by a droplet discharge method. By etching, a semiconductor layer 414b from which part of the metal wiring 412 and the gate insulating film 413 are overlapped is formed, and at the same time, n-type semiconductor films 419a and 419b are formed. At this stage, a channel etch type TFT 430 is completed.

  Next, a portion other than the terminal portion is covered with a resin such as a resist using a shadow mask, and in the terminal portion, the gate insulating film 413 is etched using the connection wiring 441 as a mask to expose part of the wiring 440. (FIG. 9B) In place of the shadow mask, a resist mask may be formed by a screen printing method to form an etching mask.

  The subsequent steps may be performed in the same manner as in the first embodiment. This embodiment is the same as the first embodiment except for the TFT structure.

  Next, a conductor 442 for connecting the wiring 440 extending to the terminal portion and the connection wiring 441 is formed. The conductive material 442 may be formed by a printing method or a droplet discharge method.

  Next, a convex portion (pillar) 420 made of a conductive member is formed on part of the source wiring or drain wiring 418a. Similarly, a convex portion (pillar) 443 is also formed on the connection wiring 441.

  Next, a flat interlayer insulating film 421 is formed by a coating method. (FIG. 4C) The interlayer insulating film 421 is not limited to a coating method, and an inorganic insulating film such as a silicon oxide film formed by a vapor deposition method or a sputtering method can also be used. Further, after a silicon nitride film is formed as a protective film by a PCVD method or a sputtering method, a flat insulating film by a coating method may be stacked.

  Alternatively, the interlayer insulating film 421 may be formed by a droplet discharge method. Further, before the firing of the convex portions (pillars) 420 and 443, the interlayer insulating film 421 may be formed by a droplet discharge method and simultaneously fired.

  Next, the interlayer insulating film on the convex portions (pillars) 420 and 443 is removed by etching back the entire surface to expose the convex portions (pillars) 420 and 443. As another method, the convex portions (pillars) 420 and 443 are exposed by grinding the interlayer insulating film by chemical mechanical polishing (CMP) and then etching back the entire surface of the interlayer insulating film. Can do.

Next, the pixel electrode 423 in contact with the convex portion (pillar) 420 is formed. Note that a terminal electrode 444 in contact with the convex portion (pillar) 443 is also formed in the same manner. In the case of manufacturing a transmissive liquid crystal display panel, indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), zinc oxide (ZnO), tin oxide ( A predetermined pattern made of a composition containing SnO ₂ ) or the like may be formed and baked to form the pixel electrode 423 and the terminal electrode 444. In the case of manufacturing a reflective liquid crystal display panel, the pixel electrode 423 and the terminal electrode 444 are formed using Ag (silver), Au (gold), Cu (copper), W (tungsten), Al ( It can be formed using a composition mainly composed of metal particles such as (aluminum).

  Through the above steps, a TFT substrate for a liquid crystal display panel in which a bottom-gate (also referred to as an inverted staggered) TFT and a pixel electrode are formed over the substrate 410 is completed.

  Next, an alignment film 424 a is formed so as to cover the pixel electrode 423. Note that the alignment film 424a may be formed using a droplet discharge method, a screen printing method, or an offset printing method. Thereafter, a rubbing process is performed on the surface of the alignment film 424a.

  The counter substrate 425 is provided with a color filter composed of a colored layer 426a, a light shielding layer (black matrix) 426b, and an overcoat layer 427, and a counter electrode composed of a transparent electrode and an alignment film 424b formed thereon. . Then, a sealing material (not shown) as a closed pattern is formed so as to surround a region overlapping with the pixel portion by a droplet discharge method. In this embodiment, an example of drawing a sealing material having a closed pattern for dripping liquid crystal is shown, but a dip type in which a sealing pattern having an opening is provided and liquid crystal is injected using a capillary phenomenon after the TFT substrate is bonded together (Pumping type) may be used.

  Next, liquid crystal is dropped under reduced pressure so that bubbles do not enter, and both substrates are bonded together. The liquid crystal is dropped once or a plurality of times in the closed loop seal pattern.

  Note that the distance between the pair of substrates may be maintained by spraying spherical spacers, forming columnar spacers made of resin, or including a filler in the sealing material.

  Next, the unnecessary substrate is divided. In case of multi-chamfering, each panel is divided. In the case of one-sided chamfering, the dividing step can be omitted by attaching a counter substrate that has been cut in advance.

  Then, the FPC 446 is attached with a known technique through the anisotropic conductor layer 445. The liquid crystal module is completed through the above steps. (FIG. 9E) If necessary, an optical film is attached. In the case of a transmissive liquid crystal display device, the polarizing plate is attached to both the active matrix substrate and the counter substrate.

  Further, in this embodiment, a process in which a light exposure process using a photomask is not used is shown, but the present invention is not particularly limited, and a part of patterning may be performed by a light exposure process using a photomask. For example, when a photomask is used in a patterning process for removing a part of a semiconductor layer whose size of a channel formation region is determined, the size can be accurately determined.

  This embodiment can be freely combined with Embodiment Mode 1, Embodiment Mode 2, or Example 1.

  In this embodiment, an example in which a droplet discharge method is used for liquid crystal dropping is described. In this embodiment, a large-area substrate is used and an example of manufacturing four panels is shown in FIG.

  FIG. 10A is a cross-sectional view in the middle of forming a liquid crystal layer by a dispenser (or ink jet). A liquid crystal material 114 is applied to the droplet discharge device 116 so as to cover the pixel portion 111 surrounded by the sealant 112. The nozzle 118 discharges, jets, or drops. The droplet discharge device 116 is moved in the direction of the arrow in FIG. Although the example in which the nozzle 118 is moved is shown here, the liquid crystal layer may be formed by fixing the nozzle and moving the substrate.

  FIG. 10B shows a perspective view. A state is shown in which the liquid crystal material 1114 is selectively ejected, jetted, or dropped only in a region surrounded by the seal 1112, and the dropping surface 1115 moves in accordance with the nozzle scanning direction 1113.

  10C and 10D are enlarged cross-sectional views of a portion 1119 surrounded by a dotted line in FIG. When the viscosity of the liquid crystal material is high, the liquid crystal material is continuously discharged and attached while being connected as shown in FIG. On the other hand, when the viscosity of the liquid crystal material is low, the liquid crystal material is discharged intermittently, and droplets are dropped as shown in FIG.

  In FIG. 10C, reference numeral 1120 denotes an inverted staggered TFT, and 1121 denotes a pixel electrode. The pixel portion 1111 includes pixel electrodes arranged in a matrix, switching elements connected to the pixel electrodes, here inverted staggered TFTs, and a storage capacitor (not shown).

  Here, the flow of panel manufacture will be described below with reference to FIGS.

  First, a first substrate 1035 having a pixel portion 1034 formed on an insulating surface is prepared. The first substrate 1035 is previously subjected to formation of an alignment film, rubbing treatment, spherical spacer dispersion, columnar spacer formation, or color filter formation. Next, as illustrated in FIG. 11A, a sealant 1032 is formed at a predetermined position (a pattern surrounding the pixel portion 1034) with a dispenser device or an inkjet device over the first substrate 1035 in an inert gas atmosphere or under reduced pressure. . The translucent sealing material 1032 includes a filler (diameter: 6 μm to 24 μm) and a viscosity of 40 to 400 Pa · s. It is preferable to select a sealing material that does not dissolve in the liquid crystal that comes into contact later. As the sealing material, an acrylic photo-curing resin or an acrylic thermosetting resin may be used. Moreover, since it is a simple sealing pattern, the sealing material 32 can also be formed by a printing method.

  Next, a liquid crystal 1033 is dropped in a region surrounded by the sealant 1032 by an ink jet method. (FIG. 11B) As the liquid crystal 1033, a known liquid crystal material having a viscosity that can be discharged by an inkjet method may be used. In addition, since the viscosity of the liquid crystal material can be set by adjusting the temperature, it is suitable for the ink jet method. A necessary amount of the liquid crystal 1033 can be held in a region surrounded by the sealant 1032 without waste by an inkjet method.

  Next, the first substrate 1035 provided with the pixel portion 1034 and the second substrate 1031 provided with the counter electrode and the alignment film are attached under reduced pressure so that bubbles do not enter. Here, the sealing material 1032 is cured by performing ultraviolet irradiation and heat treatment at the same time as bonding. In addition to ultraviolet irradiation, heat treatment may be performed.

  FIG. 12 shows an example of a bonding apparatus capable of performing ultraviolet irradiation or heat treatment at the time of bonding or after bonding.

  In FIG. 12, reference numeral 1041 denotes a first substrate support, 1042 denotes a second substrate support, 1044 denotes a window, 1048 denotes a lower surface plate, and 1049 denotes a light source. In FIG. 12, the same reference numerals are used for portions corresponding to those in FIG.

  The lower surface plate 1048 incorporates a heater and hardens the sealing material. The second substrate support is provided with a window 1044 so that ultraviolet light or the like from the light source 1049 can pass therethrough. Although not shown here, the substrate is aligned through the window 1044. In addition, the second substrate 1031 to be the counter substrate is cut into a desired size in advance and fixed to the table 1042 with a vacuum chuck or the like. FIG. 12A shows a state before bonding.

At the time of bonding, after lowering the first substrate support base and the second substrate support base, pressure is applied to bond the first substrate 1035 and the second substrate 1031 together, and curing is performed by irradiating ultraviolet light as it is. The state after pasting is shown in FIG.

  Next, the first substrate 1035 is cut using a cutting device such as a scriber device, a breaker device, or a roll cutter. (FIG. 11D) Thus, four panels can be manufactured from one substrate. Then, the FPC is pasted using a known technique.

  Note that a glass substrate or a plastic substrate can be used as the first substrate 1035 and the second substrate 1034.

  FIG. 13A shows a top view of the liquid crystal module obtained through the above steps, and FIG. 13B shows an example of a top view of another liquid crystal module.

  In FIG. 13A, reference numeral 1201 denotes an active matrix substrate, 1206 denotes a counter substrate, 1204 denotes a pixel portion, 1207 denotes a sealing material, and 1205 denotes an FPC. Note that liquid crystal is discharged by a droplet discharge method, and a pair of substrates 1201 and 1206 are attached to each other with a sealant 1207 under reduced pressure.

  In the case of using a TFT having an active layer made of a semi-amorphous silicon film, a part of a driver circuit can be manufactured, and a liquid crystal module as shown in FIG. 13B can be manufactured. Note that an IC chip (not shown) is mounted on a drive circuit that cannot be formed by a TFT having an active layer made of a semi-amorphous silicon film.

  In FIG. 13B, reference numeral 1211 denotes an active matrix substrate, 1216 denotes a counter substrate, 1212 denotes a source signal line driver circuit, 1213 denotes a gate signal line driver circuit, 1214 denotes a pixel portion, 1217 denotes a first sealant, and 1215 denotes an FPC. It is. Note that liquid crystal is discharged by a droplet discharge method, and the pair of substrates 1211 and 1216 are bonded to each other with the first sealant 1217 and the second sealant. Since the driving circuit portions 1212 and 1213 do not require liquid crystal, only the pixel portion 1214 holds the liquid crystal, and the second sealant 1218 is provided to reinforce the entire panel.

  Further, when the obtained liquid crystal module is provided with a backlight 1304 and a light guide plate 1305 and covered with a cover 1306, an active matrix liquid crystal display device (transmission type) as shown in a part of the cross-sectional view in FIG. 14 is completed. To do. The cover and the liquid crystal module are fixed using an adhesive or an organic resin. Further, since it is a transmissive type, the polarizing plate 1303 is attached to both the active matrix substrate and the counter substrate.

 In FIG. 14, 1300 is a substrate, 1301 is a pixel electrode, 1302 is a columnar spacer, 1307 is a sealing material, 1320 is a colored layer, a color filter in which a light shielding layer is arranged corresponding to each pixel, 1321 is a counter electrode, Reference numerals 1322 and 1323 denote alignment films, 1324 denotes a liquid crystal layer, and 1319 denotes a protective film.

  Further, this embodiment can be freely combined with any one of Embodiment Mode 1, Embodiment Mode 2, and Embodiments 1 and 2.

  In this embodiment, a light-emitting device having a thin film transistor is described with reference to FIG.

  As shown in FIG. 15A, a top gate type N-channel TFT having a semi-amorphous silicon film as an active layer is formed in the driver circuit portion 310 and the pixel portion 311. In particular, an N-channel TFT connected to a light emitting element formed in the pixel portion 311 is referred to as a driving TFT 301. An insulating film 302 called a bank or a partition is formed so as to cover an end portion of an electrode (referred to as a first electrode) included in the driving TFT 301. The insulating film 302 includes an inorganic material (silicon oxide, silicon nitride, silicon oxynitride, or the like), a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist, or benzocyclobutene), silicon (Si ) And oxygen (O) are combined to form a skeletal structure, and the substituent contains at least hydrogen, or the substituent has at least one of fluorine, alkyl group, or aromatic hydrocarbon, so-called siloxane, And a stacked structure thereof can be used. As the organic material, a positive photosensitive organic resin or a negative photosensitive organic resin can be used.

  An opening is formed in the insulating film 302 over the first electrode. An electroluminescent layer 303 is provided in the opening, and a second electrode 304 of the light emitting element is provided so as to cover the electroluminescent layer and the insulating film 302.

  Note that the types of molecular excitons formed by the electroluminescent layer can be a singlet excited state or a triplet excited state, and since the ground state is usually a singlet excited state, light emitted from the singlet excited state is fluorescence, triplet. Light emission from the term excited state is called phosphorescence. The light emission from the electroluminescent layer includes the case where either excited state contributes. Furthermore, fluorescence and phosphorescence may be used in combination, and can be selected according to the emission characteristics (emission luminance, lifetime, etc.) of each RGB.

The electroluminescent layer 303 is formed in the order of HIL (hole injection layer), HTL (hole transport layer), EML (light emitting layer), ETL (electron transport layer), and EIL (electron injection layer) in this order from the first electrode 215 side. Are stacked. Note that the electroluminescent layer can have a single-layer structure or a mixed structure in addition to the stacked structure.

In addition, in the case of full-color display as the electroluminescent layer 303, materials that emit red (R), green (G), and blue (B) light are selected by an evaporation method using an evaporation mask or an inkjet method, respectively. It may be formed automatically.

Specifically, CuPc or PEDOT is used as HIL, α-NPD is used as HTL, BCP or Alq _{3 is used} as ETL, and BCP: Li or CaF ₂ is used as EIL. Further, for example, EML may be Alq ₃ doped with a dopant corresponding to each emission color of R, G, and B (DCM in the case of R, DMQD in the case of G). Note that the electroluminescent layer is not limited to the material having the above stacked structure. For example, instead of CuPc or PEDOT, an oxide such as molybdenum oxide (MoOx: x = 2 to 3) and α-NPD or rubrene can be co-evaporated to improve the hole injection property. As such a material, an organic material (including a low molecule or a polymer) or a composite material of an organic material and an inorganic material can be used.

In the case of forming an electroluminescent layer that emits white light, full color display can be performed by separately providing a color filter or a color filter and a color conversion layer. The color filter and the color conversion layer may be attached to each other after being provided on the second substrate (sealing substrate), for example. The color filter and the color conversion layer can be formed by an ink jet method. Of course, a monochromatic light emitting device may be formed by forming an electroluminescent layer that emits light other than white light. Further, an area color type display device capable of monochromatic display may be formed.

  In addition, it is necessary to select materials for the first electrode and the second electrode 304 in consideration of a work function. However, each of the first electrode and the second electrode can be an anode or a cathode depending on the pixel configuration. In this embodiment, since the polarity of the driving TFT is an N-channel type, it is preferable that the first electrode be a cathode and the second electrode be an anode. In the case where the polarity of the driving TFT is a p-channel type, the first electrode may be an anode and the second electrode may be a cathode.

  In particular, in this embodiment, the polarity of the driving TFT is an N-channel type. Therefore, in consideration of the electron moving direction, the first electrode is a cathode, EIL (electron injection layer), ETL (electron transport layer), EML (EML). The light emitting layer), the HTL (hole transport layer), the HIL (hole injection layer), and the second electrode are preferably used as the anode.

  After that, a passivation film containing nitrogen, DLC, or the like may be formed by a sputtering method or a CVD method. As a result, moisture and oxygen can be prevented from entering. In addition, the first electrode, the second electrode, and other electrodes can cover the side surface of the display means to prevent oxygen and moisture from entering. Next, the sealing substrate is attached. In the space formed by the sealing substrate, nitrogen may be sealed or a desiccant may be disposed. Further, a resin having translucency and high water absorption may be filled.

  In order to increase the contrast, a polarizing plate or a circular polarizing plate may be provided. For example, a polarizing plate or a circularly polarizing plate can be provided on one surface or both surfaces of the display surface.

  In the light-emitting device having the structure thus formed, in this embodiment, a light-transmitting material (ITO or ITSO) is used for the first electrode and the second electrode. Therefore, light is emitted from the electroluminescent layer in the directions indicated by double arrows 305 and 306 with luminance according to the video signal input from the signal line.

  FIG. 15B illustrates another structural example which is partly different from FIG. 15A.

  In the structure of the light-emitting device illustrated in FIG. 15B, channel-etched N-channel TFTs are formed in the driver circuit portion 310 and the pixel portion 311. Similarly to FIG. 15A, an N-channel TFT connected to a light-emitting element formed in the pixel portion 311 is referred to as a driving TFT 301. FIG. 15A is different from FIG. 15A in that the first electrode is a light-transmitting conductive film, preferably a highly reflective conductive film, and the second electrode 304 is a light-transmitting conductive film. Therefore, the light emission direction 305 is only on the sealing substrate side.

  FIG. 15C illustrates another structural example which is partly different from the structure illustrated in FIG.

  In the structure of the light-emitting device illustrated in FIG. 15C, a channel protection type N-channel TFT is formed in the driver circuit portion 310 and the pixel portion 311. Similarly to FIG. 15A, an N-channel TFT connected to a light-emitting element formed in the pixel portion 311 is referred to as a driving TFT 301. FIG. 15A is different from FIG. 15A in that the first electrode is a light-transmitting conductive film and the second electrode 304 is a light-transmitting conductive film, preferably a highly reflective conductive film. Therefore, the light emission direction 306 is only on the substrate side.

  Although the structure of the light-emitting device is described using each thin film transistor, the structure of the thin film transistor and the structure of the light-emitting device may be combined in any way.

  An equivalent circuit diagram and a top view of the light-emitting device are described with reference to FIG. A TFT has three terminals of a gate, a source, and a drain, but the source terminal (source electrode) and the drain terminal (drain electrode) cannot be clearly distinguished due to the structure of the transistor. Therefore, when describing connection between elements, one of a source electrode and a drain electrode is referred to as a first electrode, and the other is referred to as a second electrode.

  FIG. 16A illustrates an equivalent circuit diagram of a pixel portion of a light-emitting device. One pixel includes a switching TFT (switching TFT) 1600, a driving TFT (driving TFT) 1601, and a current control TFT (current control TFT) 1602. These TFTs have an N-channel type. . One electrode and a gate electrode of the switching TFT 1601 are connected to a signal line 1603 and a scanning line 1605, respectively. One electrode of the current control TFT 1602 is connected to the first power supply line 1604, and the gate electrode is connected to the other electrode of the switching TFT.

The capacitor element 1608 may be provided so as to hold the voltage between the gate and the source of the current control TFT. In this embodiment, for example, when the potential of the first power supply line is set to a low potential and the light emitting element is set to a high potential, the current control TFT has an N-channel type, so that the source electrode and the first power supply line are connected. . Therefore, the capacitor can be provided between the gate electrode of the current control TFT and the source electrode, that is, the first power supply line. Note that in the case where the gate capacitance of the switching TFT, the driving TFT, or the current control TFT is large and the leakage current from each TFT is within an allowable range, the capacitor 1608 is not necessarily provided.

One electrode of the driving TFT 1601 is connected to the other electrode of the current control TFT, and the gate electrode is connected to the second power supply line 1606. The second power supply line 1606 has a fixed potential. Therefore, the gate potential of the driving TFT can be set to a fixed potential, and operation can be performed so that the gate-source voltage Vgs due to parasitic capacitance or wiring capacitance does not change.

A light emitting element 1607 is connected to the other electrode of the driving TFT. In this embodiment mode, for example, when the potential of the first power supply line is set to a low potential and the light emitting element is set to a high potential, the cathode of the light emitting element is connected to the drain electrode of the driving TFT. Therefore, as described above, it is preferable to stack the cathode, the electroluminescent layer, and the anode in this order. As described above, in the case of a TFT having a semi-amorphous semiconductor film and having an N-channel type, it is preferable to connect the drain electrode and the cathode of the TFT and stack the layers in the order of EIL, ETL, EML, HTL, HIL, and anode. is there.

The operation of such a pixel circuit will be described below.

  When the scanning line 1605 is selected, when the switching TFT is turned on, electric charge starts to be accumulated in the capacitor 1608. The electric charge of the capacitor 1608 is accumulated until it becomes equal to the gate-source voltage of the current control TFT. When equal, the current control TFT is turned on, and the driving TFTs connected in series are turned on. At this time, since the gate potential of the driving TFT is a fixed potential, a constant gate-source voltage Vgs is applied to the light emitting element regardless of the parasitic capacitance or the wiring capacitance, that is, the constant gate-source voltage Vgs. Minute current can be supplied.

  As described above, since the light-emitting element is a current-driven element, it is preferable to use analog driving when there is little variation in TFT characteristics in the pixel, particularly Vth variation. As in this embodiment mode, a TFT having an amorphous semiconductor film has low characteristic variation, and thus analog driving can be used. On the other hand, even in digital driving, a constant current value can be supplied to the light emitting element by operating the driving TFT in a saturation region (region satisfying | Vgs−Vth | <| Vds |).

  FIG. 16B illustrates an example of a top view of a pixel portion of a light-emitting device having the above equivalent circuit.

First, a gate electrode, a scanning line, and a second power supply line of each TFT are formed in the same layer by an inkjet method. To increase the oil repellency this time, the TiO ₂ formed on both ends in the region for forming at least the gate electrode and the scanning line, to form an irradiation region 1609 that emits light of a wavelength that photocatalytically activates.

  Although not shown, a gate insulating film is formed thereafter.

Then, a semiconductor film of each TFT is formed on the gate insulating film. In this embodiment, a semi-amorphous semiconductor film is formed on the entire surface by a plasma CVD method using SiH ₄ and F ₂ as source gases, and etching is performed using a mask to form an active layer of each TFT. Then, a semiconductor film having one conductivity type is formed by a plasma CVD method, and etching is performed using a mask to form a source region or a drain region of each TFT.

  Then, the source electrode, the drain electrode, the signal line, and the first power supply line are formed in the same layer. The source electrode, the drain electrode, the signal line, and the first power supply line can be formed by a droplet discharge method, a sputtering method, or the like.

  In order to connect one wiring of the switching TFT and the gate electrode of the current control TFT, a contact hole is formed in the gate insulating film.

  In this embodiment, the capacitor element 1608 is formed by a gate wiring and a source / drain wiring provided through a gate insulating film.

  An electrode 1610 of the light emitting element 1607 is formed so as to be connected to one electrode of the driving TFT.

  Since the driving TFT has an amorphous semiconductor film, the channel width (W) of the driving TFT is designed to be wide.

  In this manner, a pixel portion of the light emitting device can be formed.

According to the present invention, a relatively inexpensive light emitting device can be realized by using a semi-amorphous semiconductor film obtained by a PCVD method using SiH ₄ and F ₂ as source gases at a low film formation temperature as an active layer of a TFT.

  This embodiment can be freely combined with Embodiment Mode 1 or Embodiment Mode 2.

  As a liquid crystal display device, a light emitting device, and an electronic device of the present invention, a video camera, a digital camera, a goggle type display (head mounted display), a navigation system, an acoustic playback device (car audio, audio component, etc.), a notebook type personal computer, Reproducing a recording medium such as a game machine, a portable information terminal (mobile computer, cellular phone, portable game machine, electronic book, etc.), an image reproducing apparatus (specifically, Digital Versatile Disc (DVD)) equipped with a recording medium, And a device provided with a display capable of displaying the image). In particular, it is desirable to use the present invention for a large TV having a large screen. Specific examples of these electronic devices are shown in FIGS.

FIG. 17A illustrates a large display device having a large screen of 22 inches to 50 inches, which includes a housing 2001, a support base 2002, a display portion 2003, a video input terminal 2005, and the like. The display device includes all information display devices such as a personal computer, a TV broadcast receiver, and an interactive TV. According to the present invention, a semi-amorphous semiconductor film obtained by a PCVD method using SiH ₄ and F ₂ as raw material gases at a low film formation temperature can be obtained even if a glass substrate of the fifth generation or more with a side exceeding 1000 mm is used. By using the active layer, a relatively inexpensive large-sized display device can be realized.

FIG. 17B illustrates a laptop personal computer, which includes a main body 2201, a housing 2202, a display portion 2203, a keyboard 2204, an external connection port 2205, a pointing mouse 2206, and the like. According to the present invention, a relatively inexpensive notebook personal computer can be realized by using a semi-amorphous semiconductor film obtained by a PCVD method using SiH ₄ and F ₂ as source gases at a low film formation temperature as an active layer of a TFT. .

FIG. 17C illustrates a portable image reproducing device (specifically, a DVD reproducing device) provided with a recording medium, which includes a main body 2401, a housing 2402, a display portion A2403, a display portion B2404, and a recording medium (DVD or the like). A reading unit 2405, operation keys 2406, a speaker unit 2407, and the like are included. A display portion A2403 mainly displays image information, and a display portion B2404 mainly displays character information. Note that an image reproducing device provided with a recording medium includes a home game machine and the like. According to the present invention, a relatively inexpensive image reproducing device can be realized by using a semi-amorphous semiconductor film obtained by a PCVD method using SiH ₄ and F ₂ as source gases at a low film forming temperature as an active layer of a TFT.

FIG. 17D illustrates a TV that can carry only a display wirelessly. A housing 2602 includes a battery and a signal receiver, and the display portion 2604 and the speaker portion 2607 are driven by the battery. The battery can be repeatedly charged by the charger 2600. The charger 2600 can transmit and receive a video signal, and can transmit the video signal to a signal receiver of the display. The housing 2602 is controlled by operation keys 2606. The device illustrated in FIG. 17D can also be referred to as a video / audio two-way communication device because a signal can be transmitted from the housing 2602 to the charger 2600 by operating the operation key 2606. Further, by operating the operation key 2606, a signal is transmitted from the housing 2602 to the charger 2600, and further, a signal that can be transmitted by the charger 2600 is received by another electronic device, so that communication control of the other electronic device can be performed. It can be said to be a general-purpose remote control device. According to the present invention, a semi-amorphous semiconductor film obtained by a PCVD method using SiH ₄ and F ₂ as a source gas at a low film formation temperature is used as a TFT active layer, so that a relatively large size (22 inches to 50 inches) is obtained. A portable TV can be provided by an inexpensive manufacturing process.

  As described above, the liquid crystal display device and the light emitting device obtained by implementing the present invention may be used as a display portion of any electronic device.

  In addition, this embodiment can be freely combined with any one of Embodiment Mode 1, Embodiment Mode 2, and Embodiments 1 to 4.

According to the present invention, the total energy required for forming a semiconductor film including a crystal structure can be reduced, and energy consumption in the production process can be significantly suppressed.

Further, even when a film formed of a material having low heat resistance as a base film, typically an organic resin such as acrylic, aluminum wiring, or the like is used, a semiconductor film including a crystal structure is directly formed using a plasma CVD method. Making it feasible.

It is sectional drawing which shows a plasma CVD apparatus. It is a graph which shows Raman spectrum data. It is sectional drawing which shows a plasma CVD apparatus. (Embodiment 2) It is a perspective view which shows a plasma CVD apparatus. It is a top view which shows a plasma CVD apparatus. It is sectional drawing of the manufacturing process of a liquid crystal display device. Example 1 It is a figure which shows the pixel top view of a liquid crystal display device. Example 1 It is a perspective view of a droplet discharge device. Example 1 It is sectional drawing of the manufacturing process of a liquid crystal display device. (Example 2) It is the perspective view and sectional drawing which perform liquid crystal dropping by the droplet discharge method. The figure which shows a process top view. Sectional drawing which shows the bonding apparatus and the bonding process. The top view of a liquid crystal module. Sectional drawing which shows an active matrix liquid crystal display device. The figure which shows the cross-section of a light-emitting device. (Example 4) 3A and 3B are a circuit diagram and a pixel top view of a pixel of a light-emitting device. (Example 4) FIG. 14 illustrates an example of an electronic device.

Explanation of symbols

108: Chamber 105: High frequency power supply 123: Plasma

Claims (2)

An insulating film formed on the metal wiring;
A semiconductor layer including a crystal structure formed on the insulating film;
A conductive layer formed on the semiconductor layer;
Forming a structure having a layer made of an insulating material or a conductive material formed between the semiconductor layer and the conductive layer and covering an edge of the semiconductor layer;
Forming a convex portion made of a conductive member on the conductive layer;
Forming an interlayer insulating film on the conductive layer and the convex portion;
Removing the interlayer insulating film on the convex portion to expose the convex portion;
Wherein on the interlayer insulating film, forming the exposed convex portions and the electrode electrically connected,
The semiconductor layer has a silicide gas in the film forming chamber in a state where the pressure in the film forming chamber is 0.133 Pa to 133 Pa, the film forming temperature is 80 ° C. to 300 ° C., and the power source frequency of the high frequency power source is 10 MHz to 500 MHz. And a gas containing fluorine or a halogen fluoride gas is introduced as a source gas, and plasma is generated to form the semiconductor device. In claim 1 ,
The method for manufacturing a semiconductor device, wherein the convex portion is formed by repeatedly performing a droplet discharge method and stacking the conductive members.

Images