JP2005203638A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2005203638A5 JP2005203638A5 JP2004009820A JP2004009820A JP2005203638A5 JP 2005203638 A5 JP2005203638 A5 JP 2005203638A5 JP 2004009820 A JP2004009820 A JP 2004009820A JP 2004009820 A JP2004009820 A JP 2004009820A JP 2005203638 A5 JP2005203638 A5 JP 2005203638A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- film
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Claims (3)
前記金属配線上にプラズマＣＶＤ法又はスパッタリング法を用いて絶縁膜を形成し、
前記絶縁膜上にプラズマＣＶＤ法を用いて結晶構造を含む半導体膜を形成する半導体装置の作製方法であって、
成膜室の圧力を０．１３３Ｐａ〜１３３Ｐａ、成膜温度を８０℃〜３００℃、高周波電源の電源周波数を１０ＭＨｚ〜５００ＭＨｚ、とした状態において、前記成膜室に珪化物気体とフッ素或いはフッ化ハロゲンガスとを含むガスを原料ガスとして導入し、プラズマを発生させることにより前記半導体膜を形成することを特徴とする半導体装置の作製方法。 Metal wiring is formed using the droplet discharge method,
An insulating film is formed on the metal wiring using a plasma CVD method or a sputtering method,
A method for manufacturing a semiconductor device in which a semiconductor film including a crystal structure is formed on the insulating film using a plasma CVD method,
In a state where the pressure in the film forming chamber is 0.133 Pa to 133 Pa, the film forming temperature is 80 ° C. to 300 ° C., and the power supply frequency of the high frequency power source is 10 MHz to 500 MHz, silicide gas and fluorine or fluoride are added to the film forming chamber. A method for manufacturing a semiconductor device, wherein the semiconductor film is formed by introducing a gas containing a halogen gas as a source gas and generating plasma .
前記半導体膜を形成する際、前記フッ素或いはフッ化ハロゲンガスの流量に対する水素の流量の比率を０．１以下に制御して前記水素を原料ガスとして導入することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein when forming the semiconductor film, the hydrogen is introduced as a source gas by controlling a ratio of a flow rate of hydrogen to a flow rate of the fluorine or halogen fluoride gas to 0.1 or less .
前記半導体膜を形成する際、希ガスを原料ガスとして導入することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein a rare gas is introduced as a source gas when forming the semiconductor film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004009820A JP4679058B2 (en) | 2004-01-16 | 2004-01-16 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004009820A JP4679058B2 (en) | 2004-01-16 | 2004-01-16 | Method for manufacturing semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005203638A JP2005203638A (en) | 2005-07-28 |
| JP2005203638A5 true JP2005203638A5 (en) | 2007-03-01 |
| JP4679058B2 JP4679058B2 (en) | 2011-04-27 |
Family
ID=34822732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004009820A Expired - Fee Related JP4679058B2 (en) | 2004-01-16 | 2004-01-16 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4679058B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5186749B2 (en) * | 2006-09-29 | 2013-04-24 | 大日本印刷株式会社 | Organic semiconductor device and manufacturing method thereof |
| JP5186750B2 (en) * | 2006-09-29 | 2013-04-24 | 大日本印刷株式会社 | Organic semiconductor device and manufacturing method thereof |
| JP5395415B2 (en) | 2007-12-03 | 2014-01-22 | 株式会社半導体エネルギー研究所 | Method for manufacturing thin film transistor |
| US7910929B2 (en) | 2007-12-18 | 2011-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5527966B2 (en) | 2007-12-28 | 2014-06-25 | 株式会社半導体エネルギー研究所 | Thin film transistor |
| KR20110021654A (en) * | 2009-08-25 | 2011-03-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Method for manufacturing microcrystalline semiconductor film and method for manufacturing semiconductor device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0277116A (en) * | 1988-03-09 | 1990-03-16 | Tonen Corp | Manufacture of silicon crystal thin film |
| JPH02272774A (en) * | 1989-04-14 | 1990-11-07 | Hitachi Ltd | Active matrix circuit board |
| JPH06168883A (en) * | 1991-02-28 | 1994-06-14 | Tonen Corp | Formation of polycrystal silicon thin film |
| JP2003318401A (en) * | 2002-04-22 | 2003-11-07 | Seiko Epson Corp | Method of manufacturing device, the device, display device and electronic apparatus |
-
2004
- 2004-01-16 JP JP2004009820A patent/JP4679058B2/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2019055887A5 (en) | ||
| TW200729339A (en) | Selective etch of films with high dielectric constant with H2 addition | |
| JP2019515505A (en) | Plasma processing process to improve in-situ chamber cleaning efficiency in plasma processing chamber | |
| US20080314418A1 (en) | Method and System for Furnace Cleaning | |
| TW200644123A (en) | Methods of removing resist from substrates in resist stripping chambers | |
| WO2006097525A3 (en) | Method of forming silicon oxide containing films | |
| JP2006148095A5 (en) | ||
| JP2007266609A5 (en) | ||
| JP2009071291A5 (en) | ||
| JP2009533853A5 (en) | ||
| JP2005354048A (en) | High-rate etching using high pressure f2 plasma with argon diluent | |
| JP2011517848A5 (en) | ||
| JP2019508883A5 (en) | ||
| TW200620471A (en) | Silicon oxide film forming method, semiconductor device manufacturing method and computer storage medium | |
| WO2005057630A3 (en) | Manufacturable low-temperature silicon carbide deposition technology | |
| JP2011044704A5 (en) | Method of manufacturing microcrystalline semiconductor film and method of manufacturing semiconductor device | |
| JP2017118091A5 (en) | ||
| JP2008124078A5 (en) | ||
| JP2005203638A5 (en) | ||
| TW200737325A (en) | Film formation apparatus and method of using the same | |
| JP2005510081A5 (en) | ||
| JP4856010B2 (en) | Catalytic chemical vapor deposition system | |
| JP2007073811A5 (en) | Method of forming interlayer insulating film, plasma CVD apparatus, and display apparatus | |
| JP2009543351A5 (en) | ||
| JP2013536322A (en) | Deposition chamber cleaning using in situ activation of molecular fluorine |