JP2017118091A5 - - Google Patents
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- JP2017118091A5 JP2017118091A5 JP2016110071A JP2016110071A JP2017118091A5 JP 2017118091 A5 JP2017118091 A5 JP 2017118091A5 JP 2016110071 A JP2016110071 A JP 2016110071A JP 2016110071 A JP2016110071 A JP 2016110071A JP 2017118091 A5 JP2017118091 A5 JP 2017118091A5
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- JP
- Japan
- Prior art keywords
- frequency power
- high frequency
- wafer
- etching method
- containing gas
- Prior art date
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- 238000005530 etching Methods 0.000 claims 17
- 239000007789 gas Substances 0.000 claims 16
- 229910052739 hydrogen Inorganic materials 0.000 claims 8
- 239000001257 hydrogen Substances 0.000 claims 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims 8
- 229910052731 fluorine Inorganic materials 0.000 claims 6
- 239000011737 fluorine Substances 0.000 claims 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 6
- 210000002381 Plasma Anatomy 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 4
- 239000002356 single layer Substances 0.000 claims 4
- TXEYQDLBPFQVAA-UHFFFAOYSA-N Tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims 2
- 150000002431 hydrogen Chemical class 0.000 claims 2
- 230000001360 synchronised Effects 0.000 claims 2
Claims (13)
前記ウェハの温度を−３５℃以下に設定する工程と、
第１高周波の電力と、前記第１高周波よりも低い第２高周波の電力とを供給して水素含有ガス及びフッ素含有ガスからプラズマを生成し、前記ウェハをエッチングする第１の工程と、
前記第２高周波の電力の供給を停止する第２の工程と、を有し、
前記第１の工程と前記第２の工程とを複数回繰り返し、前記第１の工程は、前記第２の工程よりも短い、エッチング方法。 Providing a wafer having a laminated film in which a silicon oxide film and a silicon nitride film are laminated and a single layer film of a silicon oxide film ;
Setting the temperature of the wafer to −35 ° C. or lower;
A first high frequency power, a first step of the first by supplying a second high-frequency power is lower than the high frequency to generate plasma from a hydrogen-containing gas and a fluorine-containing gas, etching said wafer,
And a second step of stopping the supply of the second high frequency power,
An etching method in which the first step and the second step are repeated a plurality of times, and the first step is shorter than the second step.
請求項１に記載のエッチング方法。 The second step is synchronized with the stopping of the supply of the second high frequency power to stop the supply of the first high frequency power,
The etching method according to claim 1.
請求項１又は２に記載のエッチング方法。 The time of the first step is 1/3 or less of the time of the second step.
The etching method according to claim 1 or 2.
前記ウェハの温度を−３５℃以下に設定する工程と、
第１高周波の電力と、前記第１高周波よりも低い第２高周波の電力とを供給して水素含有ガス及びフッ素含有ガスからプラズマを生成し、前記ウェハをエッチングする第１の工程と、
前記第１高周波の電力又は前記第２高周波の電力のいずれかはパルス波であり、前記パルス波のＤｕｔｙ比を制御する、
エッチング方法。 Providing a wafer having a laminated film in which a silicon oxide film and a silicon nitride film are laminated and a single layer film of a silicon oxide film ;
Setting the temperature of the wafer to −35 ° C. or lower;
A first high frequency power, a first step of the first by supplying a second high-frequency power is lower than the high frequency to generate plasma from a hydrogen-containing gas and a fluorine-containing gas, etching said wafer,
Either the first high frequency power or the second high frequency power is a pulse wave, and controls the duty ratio of the pulse wave.
Etching method.
請求項４に記載のエッチング方法。 The duty ratio to be controlled is 50% or less.
The etching method according to claim 4.
前記第１高周波の電力及び前記第２高周波の電力の前記Ｄｕｔｙ比は、同じである、
請求項５に記載のエッチング方法。 The first high frequency power and the second high frequency power are pulse waves,
The duty ratio of the first high frequency power and the second high frequency power is the same.
The etching method according to claim 5.
請求項１〜６のいずれか一項に記載のエッチング方法。 The hydrogen-containing gas is hydrogen (H 2 ) gas, and the fluorine-containing gas is carbon tetrafluoride (CF 4 ) gas.
The etching method as described in any one of Claims 1-6.
前記ウェハの温度を−３５℃以下に設定する工程と、
第１高周波の電力と、前記第１高周波よりも低い第２高周波の電力とを供給して水素含有ガス及びフッ素含有ガスからプラズマを生成し、前記ウェハをエッチングする第１の工程と、
前記第２高周波の電力の供給を停止する第２の工程と、を有し、
前記第２の工程は、前記第２高周波の電力の供給の停止と同期して前記第１高周波の電力の供給が小さくなるように制御し、
前記第１の工程と前記第２の工程とを複数回繰り返し、前記第１の工程は、前記第２の工程よりも短い、エッチング方法。 Providing a wafer having a laminated film in which a silicon oxide film and a silicon nitride film are laminated and a single layer film of a silicon oxide film ;
Setting the temperature of the wafer to −35 ° C. or lower;
A first high frequency power, a first step of the first by supplying a second high-frequency power is lower than the high frequency to generate plasma from a hydrogen-containing gas and a fluorine-containing gas, etching said wafer,
And a second step of stopping the supply of the second high frequency power,
The second step is synchronized with the stopping of the supply of the second high frequency power is controlled so that the supply of the first high frequency power is reduced,
An etching method in which the first step and the second step are repeated a plurality of times, and the first step is shorter than the second step.
請求項８に記載のエッチング方法。 The time of the first step is 1/3 or less of the time of the second step.
The etching method according to claim 8.
前記ウェハの温度を−３５℃以下に設定する工程と、
第１高周波の電力と、前記第１高周波よりも低い第２高周波の電力とを供給して水素含有ガス及びフッ素含有ガスからプラズマを生成し、前記ウェハをエッチングする第１の工程と、
前記第１高周波の電力及び前記第２高周波の電力はパルス波であり、
前記パルス波のＤｕｔｙ比を制御し、
前記第２高周波の電力の供給の停止と同期して前記第１高周波の電力の供給が小さくなるように制御する、
エッチング方法。 Providing a wafer having a laminated film in which a silicon oxide film and a silicon nitride film are laminated and a single layer film of a silicon oxide film ;
Setting the temperature of the wafer to −35 ° C. or lower;
A first high frequency power, a first step of the first by supplying a second high-frequency power is lower than the high frequency to generate plasma from a hydrogen-containing gas and a fluorine-containing gas, etching said wafer,
The first high frequency power and the second high frequency power are pulse waves,
Controlling the duty ratio of the pulse wave;
Controlling the supply of the first high-frequency power to be small in synchronization with the stop of the supply of the second high-frequency power;
Etching method.
請求項１０に記載のエッチング方法。 The duty ratio to be controlled is 50% or less.
The etching method according to claim 10.
請求項１１に記載のエッチング方法。 The duty ratio of the first high frequency power and the second high frequency power is the same.
The etching method according to claim 11.
請求項８〜１２のいずれか一項に記載のエッチング方法。 The hydrogen-containing gas is hydrogen (H 2 ) gas, and the fluorine-containing gas is carbon tetrafluoride (CF 4 ) gas.
The etching method as described in any one of Claims 8-12.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105140600A TWI723096B (en) | 2015-12-18 | 2016-12-08 | Etching method |
| US15/375,405 US9997374B2 (en) | 2015-12-18 | 2016-12-12 | Etching method |
| SG10201610489WA SG10201610489WA (en) | 2015-12-18 | 2016-12-14 | Etching method |
| KR1020160170499A KR102100011B1 (en) | 2015-12-18 | 2016-12-14 | Etching method |
| CN201611165712.4A CN106952798B (en) | 2015-12-18 | 2016-12-16 | Engraving method |
| US15/977,043 US10381237B2 (en) | 2015-12-18 | 2018-05-11 | Etching method |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015247568 | 2015-12-18 | ||
| JP2015247568 | 2015-12-18 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017118091A JP2017118091A (en) | 2017-06-29 |
| JP2017118091A5 true JP2017118091A5 (en) | 2019-02-07 |
| JP6498152B2 JP6498152B2 (en) | 2019-04-10 |
Family
ID=59234560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016110071A Active JP6498152B2 (en) | 2015-12-18 | 2016-06-01 | Etching method |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6498152B2 (en) |
| KR (1) | KR102100011B1 (en) |
| CN (1) | CN106952798B (en) |
| SG (1) | SG10201610489WA (en) |
| TW (1) | TWI723096B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6948181B2 (en) * | 2017-08-01 | 2021-10-13 | 東京エレクトロン株式会社 | How to etch a multilayer film |
| JP6945388B2 (en) * | 2017-08-23 | 2021-10-06 | 東京エレクトロン株式会社 | Etching method and etching processing equipment |
| CN107507869A (en) * | 2017-09-20 | 2017-12-22 | 武汉华星光电半导体显示技术有限公司 | Low-temperature polysilicon film transistor and preparation method thereof and array base palte |
| US10340387B2 (en) | 2017-09-20 | 2019-07-02 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Low temperature poly-silicon thin film transistor, manufacturing method thereof, and array substrate |
| JP7229033B2 (en) * | 2019-02-01 | 2023-02-27 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing apparatus |
| KR20200100555A (en) | 2019-02-18 | 2020-08-26 | 도쿄엘렉트론가부시키가이샤 | Etching method |
| US11651969B2 (en) | 2019-07-18 | 2023-05-16 | Kioxia Corporation | Etching method, semiconductor manufacturing apparatus, and method of manufacturing semiconductor device |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07104927B2 (en) | 1985-08-30 | 1995-11-13 | キヤノン株式会社 | Image processing device |
| JPH0722393A (en) | 1993-06-23 | 1995-01-24 | Toshiba Corp | Dry etching equipment and method |
| JPH0722149A (en) | 1993-06-28 | 1995-01-24 | Yazaki Corp | Method and device for connecting electric wire |
| JP2956524B2 (en) | 1995-04-24 | 1999-10-04 | 日本電気株式会社 | Etching method |
| JP4593402B2 (en) * | 2005-08-25 | 2010-12-08 | 株式会社日立ハイテクノロジーズ | Etching method and etching apparatus |
| JP5192209B2 (en) * | 2006-10-06 | 2013-05-08 | 東京エレクトロン株式会社 | Plasma etching apparatus, plasma etching method, and computer-readable storage medium |
| JP5514413B2 (en) * | 2007-08-17 | 2014-06-04 | 東京エレクトロン株式会社 | Plasma etching method |
| JP2010118549A (en) * | 2008-11-13 | 2010-05-27 | Tokyo Electron Ltd | Plasma etching method and plasma etching device |
| JP5608384B2 (en) * | 2010-02-05 | 2014-10-15 | 東京エレクトロン株式会社 | Semiconductor device manufacturing method and plasma etching apparatus |
| JP6211947B2 (en) * | 2013-07-31 | 2017-10-11 | 東京エレクトロン株式会社 | Manufacturing method of semiconductor device |
| JP6277004B2 (en) * | 2014-01-31 | 2018-02-07 | 株式会社日立ハイテクノロジーズ | Dry etching method |
| JP6230930B2 (en) * | 2014-02-17 | 2017-11-15 | 東京エレクトロン株式会社 | Manufacturing method of semiconductor device |
| JP6498022B2 (en) * | 2015-04-22 | 2019-04-10 | 東京エレクトロン株式会社 | Etching method |
-
2016
- 2016-06-01 JP JP2016110071A patent/JP6498152B2/en active Active
- 2016-12-08 TW TW105140600A patent/TWI723096B/en active
- 2016-12-14 KR KR1020160170499A patent/KR102100011B1/en active IP Right Grant
- 2016-12-14 SG SG10201610489WA patent/SG10201610489WA/en unknown
- 2016-12-16 CN CN201611165712.4A patent/CN106952798B/en active Active
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