JP4678957B2 - 不揮発性メモリアレイ、マイクロコンピュータおよびマイクロコンピュータのプログラム書き換え方法 - Google Patents

不揮発性メモリアレイ、マイクロコンピュータおよびマイクロコンピュータのプログラム書き換え方法 Download PDF

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Publication number
JP4678957B2
JP4678957B2 JP2001019689A JP2001019689A JP4678957B2 JP 4678957 B2 JP4678957 B2 JP 4678957B2 JP 2001019689 A JP2001019689 A JP 2001019689A JP 2001019689 A JP2001019689 A JP 2001019689A JP 4678957 B2 JP4678957 B2 JP 4678957B2
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Japan
Prior art keywords
nonvolatile memory
microcomputer
memory array
floating gate
program
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Expired - Fee Related
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JP2001019689A
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Japanese (ja)
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JP2002230987A (ja
JP2002230987A5 (enExample
Inventor
裕太 荒木
泰弘 冨田
尚久 立川
星秀 春山
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2001019689A priority Critical patent/JP4678957B2/ja
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Publication of JP2002230987A5 publication Critical patent/JP2002230987A5/ja
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  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Microcomputers (AREA)
JP2001019689A 2001-01-29 2001-01-29 不揮発性メモリアレイ、マイクロコンピュータおよびマイクロコンピュータのプログラム書き換え方法 Expired - Fee Related JP4678957B2 (ja)

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JP2001019689A JP4678957B2 (ja) 2001-01-29 2001-01-29 不揮発性メモリアレイ、マイクロコンピュータおよびマイクロコンピュータのプログラム書き換え方法

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JP2001019689A JP4678957B2 (ja) 2001-01-29 2001-01-29 不揮発性メモリアレイ、マイクロコンピュータおよびマイクロコンピュータのプログラム書き換え方法

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JP2002230987A JP2002230987A (ja) 2002-08-16
JP2002230987A5 JP2002230987A5 (enExample) 2008-04-17
JP4678957B2 true JP4678957B2 (ja) 2011-04-27

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JP2001019689A Expired - Fee Related JP4678957B2 (ja) 2001-01-29 2001-01-29 不揮発性メモリアレイ、マイクロコンピュータおよびマイクロコンピュータのプログラム書き換え方法

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004153003A (ja) 2002-10-30 2004-05-27 Sanyo Electric Co Ltd 不揮発性半導体記憶装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6185856A (ja) * 1984-10-04 1986-05-01 Oki Electric Ind Co Ltd 読み出し専用記憶素子
IT1214246B (it) * 1987-05-27 1990-01-10 Sgs Microelettronica Spa Dispositivo di memoria non volatile ad elevato numero di cicli di modifica.
JP3662626B2 (ja) * 1995-05-22 2005-06-22 ローム株式会社 多値記憶素子、メモリアレイ、記憶および再現方法
JP3023330B2 (ja) * 1997-06-10 2000-03-21 株式会社東芝 不揮発性半導体記憶装置
JP4036552B2 (ja) * 1998-12-17 2008-01-23 富士通株式会社 不揮発性半導体記憶装置

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