JP4677044B2 - 非冷却lwir検出器に組み合わされた可視すなわちswir検出器を有するデュアル・バンド撮像装置 - Google Patents
非冷却lwir検出器に組み合わされた可視すなわちswir検出器を有するデュアル・バンド撮像装置 Download PDFInfo
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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Description
Claims (18)
- デュアル・バンド・マイクロボロメータであって、
第1波長の光を吸収する放射吸収層を含む少なくとも1つの第1の放射検出器と、
読取り回路(ROIC)と、
多層の熱絶縁脚構造であって、前記放射吸収層を前記ROICに電気的に結合する第1の層と、前記ROICに対し前記熱絶縁脚構造の熱を低下させる第2の層とを含む、前記熱絶縁脚構造と、
第2波長の光を検出する少なくとも1つの第2の放射検出器であって、該第2の放射検出器と前記ROICの間に配置されている前記放射吸収層を通じて延伸する対応の開口を介して前記ROICに電気的に結合された前記第2の放射検出器とを含み、
前記放射吸収層は、酸化バナジウムおよび酸化チタニウムのうちの少なくとも1つを含む、前記デュアル・バンド・マイクロボロメータ。 - 前記第2の放射検出器がSiPINフォトダイオード、InGaAsフォトダイオード、およびHgCdTeフォトダイオードのうちの少なくとも1つを含む、請求項1記載のデュアル・バンド・マイクロボロメータ。
- 前記第1波長の光が長波赤外線(LWIR)放射を含み、また前記第2波長の光が短波赤外線(SWIR)放射を含む、請求項1記載のデュアル・バンド・マイクロボロメータ。
- 前記第2の放射検出器がLWIR放射に対して透過的である、請求項3記載のデュアル・バンド・マイクロボロメータ。
- 前記ROICに結合され、前記ROICから出力された画像情報を処理するプロセッサと、
前記プロセッサに結合され、処理された前記画像情報を表示するディスプレイと、
を更に含む、請求項1記載のデュアル・バンド・マイクロボロメータ。 - 前記第2波長の光を検出する複数の第2の放射検出器を有し、該第2の放射検出器の各々が前記放射吸収層を通じて延伸する対応の開口を介して前記ROICに結合され、前記対応の開口は、中心から中心までのピッチで互いに間を設けられ、
前記放射吸収層は、前記ピッチの2倍である中心から中心までの距離で互いに間を設けられた接点で前記ROICと結合された、請求項1記載のデュアル・バンド・マイクロボロメータ。 - 前記第1の層はNiCrを含み、前記第2の層は窒化シリコンを含む、請求項1記載のデュアル・バンド・マイクロボロメータ。
- 前記放射吸収層が、該放射吸収層と平行な複数の層を介して前記熱絶縁脚構造に結合された第2の脚構造であって、前記熱絶縁脚構造と前記第2の脚構造とが前記平行な複数の層を横切って互いに横方向に間を設けられた、前記第2の脚構造を更に含む、請求項7記載のデュアル・バンド・マイクロボロメータ。
- 前記平行な複数の層は、複数の窒化シリコンの層の間に挟まれたNiCrの層を含む、請求項8記載のデュアル・バンド・マイクロボロメータ。
- 前記第1波長の光は、長波赤外線(LWIR)放射を含み、また前記第2波長の光が中波赤外線(MWIR)放射を含む、請求項1記載のデュアル・バンド・マイクロボロメータ。
- 前記放射吸収層が前記放射検出器から電気的に絶縁された、請求項1記載のデュアル・バンド・マイクロボロメータ。
- 画像情報を出力するデュアル・バンド・マイクロボロメータであって、
第1波長の光を吸収する放射吸収層であって、酸化バナジウムおよび酸化チタニウムのうちの少なくとも1つを含む、前記放射吸収層を含む少なくとも1つの第1の放射検出器と、
読取り回路(ROIC)と、
多層の熱絶縁脚構造であって、前記放射吸収層を前記ROICに電気的に結合する第1の層と、前記ROICに対し前記熱絶縁脚構造の熱を低下させる第2の層とを含む、前記熱絶縁脚構造と、
第2波長の光を検出する少なくとも1つの第2の放射検出器であって、該第2の放射検出器と前記ROICの間に配置されている前記放射吸収層を通じて延伸する対応の開口を介して前記ROICに電気的に結合された前記第2の放射検出器と、
デュアル・バンド撮像装置に結合され、前記画像情報を処理する処理手段と、
前記処理手段に結合され、処理された前記画像情報を表示するディスプレイ手段と、
を含む、前記デュアル・バンド・マイクロボロメータ。 - 前記第2波長の光を検出する複数の第2の放射検出器を有し、該第2の放射検出器の各々が前記放射吸収層を通じて延伸する対応の開口を介して前記ROICに結合され、前記対応の開口は、中心から中心までのピッチで互いに間を設けられ、
前記放射吸収層は、前記ピッチの2倍である前記中心から中心までの距離で互いに間を設けられた接点で前記ROICと結合された、請求項12記載のデュアル・バンド・マイクロボロメータ。 - 前記第1の層はNiCrを含み、前記第2の層は窒化シリコンを含む、請求項12記載のデュアル・バンド・マイクロボロメータ。
- 前記放射吸収層が、該放射吸収層と平行な複数の層を介して前記熱絶縁脚構造に結合された第2の脚構造であって、前記熱絶縁脚構造と前記第2の脚構造とが前記平行な複数の層を横切って互いに横方向に間を設けられた、前記第2の脚構造を更に含む、請求項14記載のデュアル・バンド・マイクロボロメータ。
- 前記平行な複数の層は、複数の窒化シリコンの層の間に挟まれたNiCrの層を含む、請求項15記載のデュアル・バンド・マイクロボロメータ。
- 前記第1波長の光は、長波赤外線(LWIR)放射を含み、また前記第2波長の光が中波赤外線(MWIR)放射を含む、請求項12記載のデュアル・バンド・マイクロボロメータ。
- 前記放射吸収層が前記放射検出器から電気的に絶縁された、請求項12記載のデュアル・バンド・マイクロボロメータ。
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Application Number | Priority Date | Filing Date | Title |
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US11/586,323 US7629582B2 (en) | 2006-10-24 | 2006-10-24 | Dual band imager with visible or SWIR detectors combined with uncooled LWIR detectors |
PCT/US2007/022461 WO2008127297A2 (en) | 2006-10-24 | 2007-10-23 | Dual band imager with visible or swir detectors combined with uncooled lwir detectors |
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JP2010507806A JP2010507806A (ja) | 2010-03-11 |
JP2010507806A5 JP2010507806A5 (ja) | 2010-07-15 |
JP4677044B2 true JP4677044B2 (ja) | 2011-04-27 |
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EP (1) | EP2084501B1 (ja) |
JP (1) | JP4677044B2 (ja) |
IL (1) | IL198218A (ja) |
WO (1) | WO2008127297A2 (ja) |
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IL198218A0 (en) | 2009-12-24 |
US7629582B2 (en) | 2009-12-08 |
US20080093554A1 (en) | 2008-04-24 |
WO2008127297A3 (en) | 2008-12-18 |
JP2010507806A (ja) | 2010-03-11 |
EP2084501B1 (en) | 2016-09-07 |
IL198218A (en) | 2012-06-28 |
WO2008127297A2 (en) | 2008-10-23 |
EP2084501A2 (en) | 2009-08-05 |
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