JP4674994B2 - 電気光学装置の作製方法 - Google Patents

電気光学装置の作製方法 Download PDF

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Publication number
JP4674994B2
JP4674994B2 JP2001161485A JP2001161485A JP4674994B2 JP 4674994 B2 JP4674994 B2 JP 4674994B2 JP 2001161485 A JP2001161485 A JP 2001161485A JP 2001161485 A JP2001161485 A JP 2001161485A JP 4674994 B2 JP4674994 B2 JP 4674994B2
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Japan
Prior art keywords
film
insulating film
resist film
unevenness
contact holes
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Expired - Fee Related
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JP2001161485A
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English (en)
Japanese (ja)
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JP2002055631A (ja
JP2002055631A5 (enExample
Inventor
到 小山
吉晴 平形
一郎 上原
晋吾 江口
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2001161485A priority Critical patent/JP4674994B2/ja
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Publication of JP2002055631A5 publication Critical patent/JP2002055631A5/ja
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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2001161485A 2000-05-29 2001-05-29 電気光学装置の作製方法 Expired - Fee Related JP4674994B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001161485A JP4674994B2 (ja) 2000-05-29 2001-05-29 電気光学装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000159223 2000-05-29
JP2000-159223 2000-05-29
JP2001161485A JP4674994B2 (ja) 2000-05-29 2001-05-29 電気光学装置の作製方法

Related Child Applications (1)

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JP2010216489A Division JP4827984B2 (ja) 2000-05-29 2010-09-28 液晶表示装置の作製方法

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JP2002055631A JP2002055631A (ja) 2002-02-20
JP2002055631A5 JP2002055631A5 (enExample) 2007-07-26
JP4674994B2 true JP4674994B2 (ja) 2011-04-20

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JP2001161485A Expired - Fee Related JP4674994B2 (ja) 2000-05-29 2001-05-29 電気光学装置の作製方法

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JP (1) JP4674994B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4827984B2 (ja) * 2000-05-29 2011-11-30 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
KR100878236B1 (ko) * 2002-06-12 2009-01-13 삼성전자주식회사 금속 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터기판의 제조 방법
KR101061844B1 (ko) * 2004-06-29 2011-09-02 삼성전자주식회사 박막 표시판의 제조 방법

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53147A (en) * 1976-06-23 1978-01-05 Matsushita Electric Ind Co Ltd Preparation of hologram recording media
JPH03198237A (ja) * 1989-12-26 1991-08-29 Hitachi Chem Co Ltd 光ディスク用スタンパの製造法
JP2740401B2 (ja) * 1992-04-02 1998-04-15 シャープ株式会社 反射型液晶表示装置およびその製造方法
JPH06175126A (ja) * 1992-12-11 1994-06-24 Sharp Corp 反射型液晶表示装置およびその製造方法
JP3316699B2 (ja) * 1993-02-10 2002-08-19 株式会社ニコン Ｘ線反射用光学素子およびそれを有するｘ線光学系
JP3619540B2 (ja) * 1994-01-14 2005-02-09 リコー光学株式会社 光学デバイス用材料・光学デバイス・光学デバイス製造方法
JP3097945B2 (ja) * 1994-10-03 2000-10-10 シャープ株式会社 反射型液晶表示装置の製造方法
JP3215618B2 (ja) * 1995-11-28 2001-10-09 シャープ株式会社 反射型液晶表示装置の製造方法
JP2828015B2 (ja) * 1996-03-28 1998-11-25 日本電気株式会社 半導体装置の製造方法
JP3447535B2 (ja) * 1997-10-24 2003-09-16 シャープ株式会社 薄膜トランジスタおよびその製造方法
JP3410667B2 (ja) * 1997-11-25 2003-05-26 シャープ株式会社 反射型液晶表示装置およびその製造方法
JP3377447B2 (ja) * 1998-03-05 2003-02-17 シャープ株式会社 液晶表示パネル及びその製造方法
JPH11305221A (ja) * 1998-04-27 1999-11-05 Ricoh Co Ltd 反射型液晶表示装置およびその製造方法
JP2000089217A (ja) * 1998-09-08 2000-03-31 Matsushita Electric Ind Co Ltd 反射型液晶表示装置とその製造方法
JP2000206564A (ja) * 1999-01-13 2000-07-28 Advanced Display Inc 反射型液晶表示装置及びその製造方法
JP3193906B2 (ja) * 1999-01-14 2001-07-30 シャープ株式会社 反射型液晶表示装置の製造方法
JP4260334B2 (ja) * 1999-03-29 2009-04-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000349301A (ja) * 1999-04-01 2000-12-15 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法

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JP2002055631A (ja) 2002-02-20

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