JP4666740B2 - 半導体製造装置、被処理基板表面の処理方法およびプラズマ生成物の付着状態の観察方法 - Google Patents

半導体製造装置、被処理基板表面の処理方法およびプラズマ生成物の付着状態の観察方法 Download PDF

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Publication number
JP4666740B2
JP4666740B2 JP2000307237A JP2000307237A JP4666740B2 JP 4666740 B2 JP4666740 B2 JP 4666740B2 JP 2000307237 A JP2000307237 A JP 2000307237A JP 2000307237 A JP2000307237 A JP 2000307237A JP 4666740 B2 JP4666740 B2 JP 4666740B2
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Japan
Prior art keywords
bias voltage
plasma
electromagnetic wave
predetermined range
power
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Expired - Fee Related
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JP2000307237A
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English (en)
Japanese (ja)
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JP2002118095A (ja
JP2002118095A5 (enExample
Inventor
康嗣 鈴木
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Kawasaki Microelectronics Inc
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Kawasaki Microelectronics Inc
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Priority to JP2000307237A priority Critical patent/JP4666740B2/ja
Priority to US09/970,763 priority patent/US6815369B2/en
Publication of JP2002118095A publication Critical patent/JP2002118095A/ja
Publication of JP2002118095A5 publication Critical patent/JP2002118095A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2000307237A 2000-10-06 2000-10-06 半導体製造装置、被処理基板表面の処理方法およびプラズマ生成物の付着状態の観察方法 Expired - Fee Related JP4666740B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000307237A JP4666740B2 (ja) 2000-10-06 2000-10-06 半導体製造装置、被処理基板表面の処理方法およびプラズマ生成物の付着状態の観察方法
US09/970,763 US6815369B2 (en) 2000-10-06 2001-10-05 Method for monitoring deposition reaction during processing the surface of a semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000307237A JP4666740B2 (ja) 2000-10-06 2000-10-06 半導体製造装置、被処理基板表面の処理方法およびプラズマ生成物の付着状態の観察方法

Publications (3)

Publication Number Publication Date
JP2002118095A JP2002118095A (ja) 2002-04-19
JP2002118095A5 JP2002118095A5 (enExample) 2007-12-06
JP4666740B2 true JP4666740B2 (ja) 2011-04-06

Family

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Family Applications (1)

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JP2000307237A Expired - Fee Related JP4666740B2 (ja) 2000-10-06 2000-10-06 半導体製造装置、被処理基板表面の処理方法およびプラズマ生成物の付着状態の観察方法

Country Status (2)

Country Link
US (1) US6815369B2 (enExample)
JP (1) JP4666740B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100476460B1 (ko) * 2001-11-05 2005-03-17 주성엔지니어링(주) 플라즈마 공정챔버 모니터링 방법 및 그 시스템
DE112005001429T5 (de) * 2004-06-18 2007-04-26 Innovalight, Inc., St. Paul Verfahren und Vorrichtung zum Bilden von Nanopartikeln unter Verwendung von Hochfrequenzplasmen
JP4722669B2 (ja) * 2005-10-26 2011-07-13 株式会社日立ハイテクインスツルメンツ プラズマ洗浄装置
US8004293B2 (en) * 2006-11-20 2011-08-23 Applied Materials, Inc. Plasma processing chamber with ground member integrity indicator and method for using the same
US20090014423A1 (en) * 2007-07-10 2009-01-15 Xuegeng Li Concentric flow-through plasma reactor and methods therefor
WO2008091581A1 (en) * 2007-01-22 2008-07-31 The University Of Minnesota Nanoparticles with grafted organic molecules
WO2008143716A2 (en) * 2007-01-22 2008-11-27 Innovalight, Inc. In situ modification of group iv nanoparticles using gas phase nanoparticle reactors
US8968438B2 (en) * 2007-07-10 2015-03-03 Innovalight, Inc. Methods and apparatus for the in situ collection of nucleated particles
US8471170B2 (en) 2007-07-10 2013-06-25 Innovalight, Inc. Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor
WO2010018786A1 (ja) * 2008-08-11 2010-02-18 住友精密工業株式会社 プラズマ制御装置
US10962483B2 (en) * 2017-10-03 2021-03-30 Innotech Alberta Inc. Reduction of molecular background emission and sample matrix management in a solution cathode glow discharge

Family Cites Families (26)

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Publication number Priority date Publication date Assignee Title
KR0170387B1 (ko) * 1989-10-03 1999-03-30 제임스 조셉 드롱 고주파 반도체 웨이퍼 가공장치 및 방법
JP3084944B2 (ja) 1992-07-30 2000-09-04 株式会社日立製作所 プラズマ生成方法
JPH0684800A (ja) * 1992-09-04 1994-03-25 Hitachi Ltd プラズマプロセス装置
TW296534B (enExample) * 1993-12-17 1997-01-21 Tokyo Electron Co Ltd
JPH07302696A (ja) * 1994-05-06 1995-11-14 Hitachi Ltd アースラインのモニター方法およびそれを用いたプラズマ処理装置
US5576629A (en) * 1994-10-24 1996-11-19 Fourth State Technology, Inc. Plasma monitoring and control method and system
JP3116762B2 (ja) * 1995-01-27 2000-12-11 住友金属工業株式会社 プラズマエッチング装置
JP3292270B2 (ja) * 1995-02-27 2002-06-17 富士通株式会社 静電吸着装置
US6283130B1 (en) * 1995-05-30 2001-09-04 Anelva Corporation Plasma cleaning method and placement area protector used in the method
JPH0927395A (ja) * 1995-07-12 1997-01-28 Kobe Steel Ltd プラズマ処理装置及び該装置を用いたプラズマ処理方法
JPH09232289A (ja) * 1996-02-28 1997-09-05 Nec Kyushu Ltd ドライエッチング装置
US6197116B1 (en) * 1996-08-29 2001-03-06 Fujitsu Limited Plasma processing system
JPH10101829A (ja) * 1996-10-01 1998-04-21 Matsushita Electric Ind Co Ltd プラスチック基材およびその製造方法、並びにインクジェットプリンタ用ヘッドおよびその製造方法
JP3402972B2 (ja) * 1996-11-14 2003-05-06 東京エレクトロン株式会社 半導体装置の製造方法
JPH10240356A (ja) * 1997-02-21 1998-09-11 Anelva Corp 基板処理装置の基板温度制御法と基板温度制御性判定法
US6066399A (en) * 1997-03-19 2000-05-23 Sanyo Electric Co., Ltd. Hard carbon thin film and method of forming the same
US6174450B1 (en) * 1997-04-16 2001-01-16 Lam Research Corporation Methods and apparatus for controlling ion energy and plasma density in a plasma processing system
JPH11162958A (ja) * 1997-09-16 1999-06-18 Tokyo Electron Ltd プラズマ処理装置及びその方法
JP3726477B2 (ja) 1998-03-16 2005-12-14 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
JP2000031072A (ja) * 1998-07-10 2000-01-28 Seiko Epson Corp プラズマモニタ方法及び半導体製造装置
US6211035B1 (en) * 1998-09-09 2001-04-03 Texas Instruments Incorporated Integrated circuit and method
JP3958877B2 (ja) * 1998-09-14 2007-08-15 大日本印刷株式会社 真空成膜装置
JP2000208495A (ja) * 1999-01-18 2000-07-28 Mitsubishi Electric Corp プラズマ処理方法およびプラズマ処理装置
JP2000299198A (ja) * 1999-02-10 2000-10-24 Tokyo Electron Ltd プラズマ処理装置
JP3959200B2 (ja) * 1999-03-19 2007-08-15 株式会社東芝 半導体装置の製造装置
US6509542B1 (en) * 1999-09-30 2003-01-21 Lam Research Corp. Voltage control sensor and control interface for radio frequency power regulation in a plasma reactor

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Publication number Publication date
JP2002118095A (ja) 2002-04-19
US6815369B2 (en) 2004-11-09
US20020040765A1 (en) 2002-04-11

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