JP4666608B2 - 電極構造の製造方法 - Google Patents
電極構造の製造方法 Download PDFInfo
- Publication number
- JP4666608B2 JP4666608B2 JP2005190754A JP2005190754A JP4666608B2 JP 4666608 B2 JP4666608 B2 JP 4666608B2 JP 2005190754 A JP2005190754 A JP 2005190754A JP 2005190754 A JP2005190754 A JP 2005190754A JP 4666608 B2 JP4666608 B2 JP 4666608B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- solder
- electrode structure
- under bump
- bump metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13005—Structure
- H01L2224/13006—Bump connector larger than the underlying bonding area, e.g. than the under bump metallisation [UBM]
Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
Description
ウエファ上にシードメタルを配置し、
前記シードメタル上に前記アンダーバンプメタルの前記銅層と前記ニッケル層とを形成し、
前記銅層と前記ニッケル層との境界部分を、前記ニッケル層の上面に露出させることなく、前記銅層および前記ニッケル層の側面に露出させ、
前記アンダーバンプメタルの前記ニッケル層の上面に前記半田バンプを配置し、
前記ニッケル層の上面に配置された前記半田バンプの外周部分を除去し、
溶融せしめられた半田バンプの流れを堰き止めるための半田流れ止め手段を、残された前記半田バンプの外縁よりも外側の前記ニッケル層の上面のみに配置し、前記ニッケル層の側面に配置しないことにより、前記半田流れ止め手段が前記銅層と前記ニッケル層との前記境界部分と前記半田バンプとの間に位置することを特徴とする電極構造の製造方法が提供される。
。
Claims (3)
- 銅層上にニッケル層が積層されたアンダーバンプメタルと、前記アンダーバンプメタルの前記ニッケル層の上面に配置された錫の含有量が80重量%以上の半田バンプとを具備する電極構造の製造方法において、
ウエファ上にシードメタルを配置し、
前記シードメタル上に前記アンダーバンプメタルの前記銅層と前記ニッケル層とを形成し、
前記銅層と前記ニッケル層との境界部分を、前記ニッケル層の上面に露出させることなく、前記銅層および前記ニッケル層の側面に露出させ、
前記アンダーバンプメタルの前記ニッケル層の上面に前記半田バンプを配置し、
前記ニッケル層の上面に配置された前記半田バンプの外周部分を除去し、
溶融せしめられた半田バンプの流れを堰き止めるための半田流れ止め手段を、残された前記半田バンプの外縁よりも外側の前記ニッケル層の上面のみに配置し、前記ニッケル層の側面に配置しないことにより、前記半田流れ止め手段が前記銅層と前記ニッケル層との前記境界部分と前記半田バンプとの間に位置することを特徴とする電極構造の製造方法。 - アルミニウム、チタン、ポリイミド、ポリシリコン、燐シリケイトガラス、ノンドープドシリケイトガラス、モリブデン、または窒化膜により前記半田流れ止め手段を形成することを特徴とする請求項1に記載の電極構造の製造方法。
- 前記ニッケル層の厚さが前記銅層の厚さの6分の1以下であることを特徴とする請求項1又は2に記載の電極構造の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005190754A JP4666608B2 (ja) | 2005-06-29 | 2005-06-29 | 電極構造の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005190754A JP4666608B2 (ja) | 2005-06-29 | 2005-06-29 | 電極構造の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007012826A JP2007012826A (ja) | 2007-01-18 |
JP4666608B2 true JP4666608B2 (ja) | 2011-04-06 |
Family
ID=37750956
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005190754A Active JP4666608B2 (ja) | 2005-06-29 | 2005-06-29 | 電極構造の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4666608B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9196812B2 (en) | 2013-12-17 | 2015-11-24 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device and semiconductor light emitting apparatus having the same |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101128916B1 (ko) * | 2011-03-10 | 2012-03-27 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 형성 방법 |
JP2014192383A (ja) * | 2013-03-27 | 2014-10-06 | Fujitsu Ltd | 電子部品及び電子装置の製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63121448U (ja) * | 1987-01-31 | 1988-08-05 | ||
JPH03160723A (ja) * | 1989-11-17 | 1991-07-10 | Fujitsu Ltd | バンプ搭載配線 |
JP2003045877A (ja) * | 2001-08-01 | 2003-02-14 | Sharp Corp | 半導体装置およびその製造方法 |
JP2003229450A (ja) * | 2002-01-31 | 2003-08-15 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2004502294A (ja) * | 2000-03-09 | 2004-01-22 | エイチアールエル ラボラトリーズ,エルエルシー | 精密な電気めっきはんだバンプおよびその形成方法 |
-
2005
- 2005-06-29 JP JP2005190754A patent/JP4666608B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63121448U (ja) * | 1987-01-31 | 1988-08-05 | ||
JPH03160723A (ja) * | 1989-11-17 | 1991-07-10 | Fujitsu Ltd | バンプ搭載配線 |
JP2004502294A (ja) * | 2000-03-09 | 2004-01-22 | エイチアールエル ラボラトリーズ,エルエルシー | 精密な電気めっきはんだバンプおよびその形成方法 |
JP2003045877A (ja) * | 2001-08-01 | 2003-02-14 | Sharp Corp | 半導体装置およびその製造方法 |
JP2003229450A (ja) * | 2002-01-31 | 2003-08-15 | Fujitsu Ltd | 半導体装置及びその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9196812B2 (en) | 2013-12-17 | 2015-11-24 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device and semiconductor light emitting apparatus having the same |
Also Published As
Publication number | Publication date |
---|---|
JP2007012826A (ja) | 2007-01-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8901735B2 (en) | Connector design for packaging integrated circuits | |
JP4327656B2 (ja) | 半導体装置 | |
US7863741B2 (en) | Semiconductor chip and manufacturing method thereof | |
CN107210237B (zh) | 半导体封装件 | |
JP3899050B2 (ja) | 基板上に無鉛はんだ合金を形成する方法 | |
US9659892B2 (en) | Semiconductor device and method of manufacturing semiconductor device | |
TW200832643A (en) | Under bump metallurgy structure of a package and method of making same | |
JP2001308129A (ja) | 鉛フリーバンプの形成方法 | |
JP2007096315A (ja) | フリップチップ半導体デバイス用はんだバンプ構造およびその製造方法 | |
TWI467718B (zh) | 凸塊結構以及電子封裝接點結構及其製造方法 | |
JP5922523B2 (ja) | 金属間化合物の成長の阻害方法 | |
US20100052162A1 (en) | Semiconductor device and method for fabricating semiconductor device | |
KR100793970B1 (ko) | Zn을 이용하는 솔더링 구조물 및 솔더링 방법 | |
JPH06196349A (ja) | タンタルコンデンサ用銅系リードフレーム材及びその製造方法 | |
JP4666608B2 (ja) | 電極構造の製造方法 | |
JP2009129983A (ja) | 接合体及びその製造方法、並びにパワー半導体モジュール及びその製造方法 | |
JP7310482B2 (ja) | 接合構造及び液相拡散接合方法 | |
WO2011036829A1 (ja) | 半導体装置及びその製造方法 | |
US11817417B2 (en) | Semiconductor device and method for fabricating a semiconductor device | |
KR100572151B1 (ko) | Sn-In계 솔더를 이용한 반도체 칩의 본딩 방법 | |
KR101282202B1 (ko) | 반도체 소자용 범프 구조물 및 그의 제조 방법 | |
KR101288790B1 (ko) | 플립 칩 반도체 디바이스들을 위한 솔더 범프 구조 및 이의제조 방법 | |
KR100503411B1 (ko) | Au-Sn계 솔더층 및 솔더범프 제조 방법 | |
US20090212422A1 (en) | JOINT RELIABILITY OF SOLDER JOINT BETWEEN Sn-yAg SOLDER AND Ni-P UNDER BUMP METALLIC LAYER BY COBALT ADDITION | |
JP2018118276A (ja) | ハンダ接合方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080421 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100628 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100630 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100805 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101110 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101215 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110106 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110107 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140121 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4666608 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |