JP4659788B2 - 裏面照射型撮像素子 - Google Patents

裏面照射型撮像素子 Download PDF

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Publication number
JP4659788B2
JP4659788B2 JP2007165018A JP2007165018A JP4659788B2 JP 4659788 B2 JP4659788 B2 JP 4659788B2 JP 2007165018 A JP2007165018 A JP 2007165018A JP 2007165018 A JP2007165018 A JP 2007165018A JP 4659788 B2 JP4659788 B2 JP 4659788B2
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JP
Japan
Prior art keywords
charge storage
light
charge
image sensor
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007165018A
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English (en)
Japanese (ja)
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JP2009004615A5 (OSRAM
JP2009004615A (ja
Inventor
賢明 小柴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2007165018A priority Critical patent/JP4659788B2/ja
Priority to US12/142,569 priority patent/US8072007B2/en
Publication of JP2009004615A publication Critical patent/JP2009004615A/ja
Publication of JP2009004615A5 publication Critical patent/JP2009004615A5/ja
Application granted granted Critical
Publication of JP4659788B2 publication Critical patent/JP4659788B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/133—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing panchromatic light, e.g. filters passing white light
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/135—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2007165018A 2007-06-22 2007-06-22 裏面照射型撮像素子 Expired - Fee Related JP4659788B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007165018A JP4659788B2 (ja) 2007-06-22 2007-06-22 裏面照射型撮像素子
US12/142,569 US8072007B2 (en) 2007-06-22 2008-06-19 Backside-illuminated imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007165018A JP4659788B2 (ja) 2007-06-22 2007-06-22 裏面照射型撮像素子

Publications (3)

Publication Number Publication Date
JP2009004615A JP2009004615A (ja) 2009-01-08
JP2009004615A5 JP2009004615A5 (OSRAM) 2010-08-26
JP4659788B2 true JP4659788B2 (ja) 2011-03-30

Family

ID=40320666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007165018A Expired - Fee Related JP4659788B2 (ja) 2007-06-22 2007-06-22 裏面照射型撮像素子

Country Status (2)

Country Link
US (1) US8072007B2 (OSRAM)
JP (1) JP4659788B2 (OSRAM)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5394814B2 (ja) 2009-05-01 2014-01-22 三星電子株式会社 光検出素子及び撮像装置
US8358365B2 (en) * 2009-05-01 2013-01-22 Samsung Electronics Co., Ltd. Photo detecting device and image pickup device and method thereon
US8334195B2 (en) 2009-09-09 2012-12-18 International Business Machines Corporation Pixel sensors of multiple pixel size and methods of implant dose control
US8461532B2 (en) * 2009-11-05 2013-06-11 The Aerospace Corporation Refraction assisted illumination for imaging
US8138476B2 (en) 2009-11-05 2012-03-20 The Aerospace Corporation Refraction assisted illumination for imaging
US8450688B2 (en) 2009-11-05 2013-05-28 The Aerospace Corporation Refraction assisted illumination for imaging
JP5478217B2 (ja) 2009-11-25 2014-04-23 パナソニック株式会社 固体撮像装置
CN103443921B (zh) 2011-03-25 2015-02-25 富士胶片株式会社 背照式固态图像感测元件及其制造方法和成像装置
US9007454B2 (en) 2012-10-31 2015-04-14 The Aerospace Corporation Optimized illumination for imaging
JP2014179413A (ja) * 2013-03-14 2014-09-25 Toshiba Corp 固体撮像装置
CN109599408B (zh) * 2018-12-26 2022-05-03 中国电子科技集团公司第四十四研究所 一种cmos图像传感器像素结构及其制备、使用方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11355790A (ja) 1998-06-09 1999-12-24 Fuji Film Microdevices Co Ltd 二次元カラー撮像素子
KR100485892B1 (ko) * 2002-11-14 2005-04-29 매그나칩 반도체 유한회사 시모스 이미지센서 및 그 제조방법
JP2004304706A (ja) * 2003-04-01 2004-10-28 Fuji Photo Film Co Ltd 固体撮像装置およびその補間処理方法
JP4046067B2 (ja) 2003-11-04 2008-02-13 ソニー株式会社 固体撮像素子の製造方法
JP4507769B2 (ja) * 2004-08-31 2010-07-21 ソニー株式会社 固体撮像素子、カメラモジュール及び電子機器モジュール
US7456384B2 (en) * 2004-12-10 2008-11-25 Sony Corporation Method and apparatus for acquiring physical information, method for manufacturing semiconductor device including array of plurality of unit components for detecting physical quantity distribution, light-receiving device and manufacturing method therefor, and solid-state imaging device and manufacturing method therefor

Also Published As

Publication number Publication date
US20090045415A1 (en) 2009-02-19
JP2009004615A (ja) 2009-01-08
US8072007B2 (en) 2011-12-06

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