JP4657740B2 - 荷電粒子線光学系用収差測定装置、該収差測定装置を具備する荷電粒子線露光装置及び該装置を用いたデバイス製造方法 - Google Patents

荷電粒子線光学系用収差測定装置、該収差測定装置を具備する荷電粒子線露光装置及び該装置を用いたデバイス製造方法 Download PDF

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JP4657740B2
JP4657740B2 JP2005017698A JP2005017698A JP4657740B2 JP 4657740 B2 JP4657740 B2 JP 4657740B2 JP 2005017698 A JP2005017698 A JP 2005017698A JP 2005017698 A JP2005017698 A JP 2005017698A JP 4657740 B2 JP4657740 B2 JP 4657740B2
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Japan
Prior art keywords
charged particle
particle beam
optical system
aberration
beam optical
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Expired - Lifetime
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JP2005017698A
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Japanese (ja)
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JP2006210458A5 (enExample
JP2006210458A (ja
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真人 村木
洋也 太田
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Canon Inc
Hitachi High Tech Corp
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Hitachi High Technologies Corp
Canon Inc
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Priority to JP2005017698A priority Critical patent/JP4657740B2/ja
Priority to US11/337,603 priority patent/US7378671B2/en
Priority to DE602006020796T priority patent/DE602006020796D1/de
Priority to EP06001639A priority patent/EP1686609B1/en
Publication of JP2006210458A publication Critical patent/JP2006210458A/ja
Publication of JP2006210458A5 publication Critical patent/JP2006210458A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2005017698A 2005-01-26 2005-01-26 荷電粒子線光学系用収差測定装置、該収差測定装置を具備する荷電粒子線露光装置及び該装置を用いたデバイス製造方法 Expired - Lifetime JP4657740B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005017698A JP4657740B2 (ja) 2005-01-26 2005-01-26 荷電粒子線光学系用収差測定装置、該収差測定装置を具備する荷電粒子線露光装置及び該装置を用いたデバイス製造方法
US11/337,603 US7378671B2 (en) 2005-01-26 2006-01-24 Aberration measuring apparatus for charged particle beam optical system, charged particle beam lithography machine having the aberration measuring apparatus, and device fabrication method using the apparatus
DE602006020796T DE602006020796D1 (de) 2005-01-26 2006-01-26 Aberrationsmessvorrichtung zum Messen von Aberrationen eines für Ladungspartikelstrahlenbündel vorgesehenen optischen Systems, lithographischer Apparat mit einer solchen Vorrichtung, und Verfahren zur Herstellung von Erzeugnissen mit einem solchen Apparat
EP06001639A EP1686609B1 (en) 2005-01-26 2006-01-26 Aberration measuring apparatus for charged particle beam optical system, charged particle beam lithography machine having the aberration measuring apparatus, and device fabrication method using the apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005017698A JP4657740B2 (ja) 2005-01-26 2005-01-26 荷電粒子線光学系用収差測定装置、該収差測定装置を具備する荷電粒子線露光装置及び該装置を用いたデバイス製造方法

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JP2006210458A JP2006210458A (ja) 2006-08-10
JP2006210458A5 JP2006210458A5 (enExample) 2008-03-06
JP4657740B2 true JP4657740B2 (ja) 2011-03-23

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US (1) US7378671B2 (enExample)
EP (1) EP1686609B1 (enExample)
JP (1) JP4657740B2 (enExample)
DE (1) DE602006020796D1 (enExample)

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US11145485B2 (en) * 2018-12-26 2021-10-12 Nuflare Technology, Inc. Multiple electron beams irradiation apparatus
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US20060169898A1 (en) 2006-08-03
EP1686609A2 (en) 2006-08-02
US7378671B2 (en) 2008-05-27
EP1686609B1 (en) 2011-03-23
JP2006210458A (ja) 2006-08-10
EP1686609A3 (en) 2009-01-14
DE602006020796D1 (de) 2011-05-05

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