JP4651777B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4651777B2
JP4651777B2 JP2000165617A JP2000165617A JP4651777B2 JP 4651777 B2 JP4651777 B2 JP 4651777B2 JP 2000165617 A JP2000165617 A JP 2000165617A JP 2000165617 A JP2000165617 A JP 2000165617A JP 4651777 B2 JP4651777 B2 JP 4651777B2
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Japan
Prior art keywords
film
insulating film
interlayer insulating
wiring
gate
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000165617A
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English (en)
Japanese (ja)
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JP2001053287A5 (https=
JP2001053287A (ja
Inventor
舜平 山崎
英臣 須沢
裕和 山形
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2000165617A priority Critical patent/JP4651777B2/ja
Publication of JP2001053287A publication Critical patent/JP2001053287A/ja
Publication of JP2001053287A5 publication Critical patent/JP2001053287A5/ja
Application granted granted Critical
Publication of JP4651777B2 publication Critical patent/JP4651777B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers

Landscapes

  • Liquid Crystal (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Non-Volatile Memory (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Drying Of Semiconductors (AREA)
JP2000165617A 1999-06-02 2000-06-02 半導体装置の作製方法 Expired - Fee Related JP4651777B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000165617A JP4651777B2 (ja) 1999-06-02 2000-06-02 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-154432 1999-06-02
JP15443299 1999-06-02
JP2000165617A JP4651777B2 (ja) 1999-06-02 2000-06-02 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010241878A Division JP5025781B2 (ja) 1999-06-02 2010-10-28 半導体装置

Publications (3)

Publication Number Publication Date
JP2001053287A JP2001053287A (ja) 2001-02-23
JP2001053287A5 JP2001053287A5 (https=) 2007-08-23
JP4651777B2 true JP4651777B2 (ja) 2011-03-16

Family

ID=26482711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000165617A Expired - Fee Related JP4651777B2 (ja) 1999-06-02 2000-06-02 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4651777B2 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3608613B2 (ja) 2001-03-28 2005-01-12 株式会社日立製作所 表示装置
JP4926346B2 (ja) * 2001-08-10 2012-05-09 株式会社半導体エネルギー研究所 発光装置
JP3810725B2 (ja) 2001-09-21 2006-08-16 株式会社半導体エネルギー研究所 発光装置及び電子機器
JP3965323B2 (ja) * 2002-05-14 2007-08-29 旺宏電子股▲ふん▼有限公司 メモリ装置及びその製造方法
JP4095518B2 (ja) * 2002-10-31 2008-06-04 セイコーエプソン株式会社 電気光学装置及び電子機器
JP4506133B2 (ja) * 2002-10-31 2010-07-21 セイコーエプソン株式会社 電気光学装置及び電子機器
JP4862936B2 (ja) * 2002-10-31 2012-01-25 セイコーエプソン株式会社 電気光学装置及び電子機器
KR100752950B1 (ko) 2004-04-30 2007-08-30 엘지.필립스 엘시디 주식회사 씨오티구조 액정표시장치 및 그 제조방법
CN102569342B (zh) * 2004-12-06 2015-04-22 株式会社半导体能源研究所 显示装置
JP5046529B2 (ja) * 2005-02-25 2012-10-10 株式会社半導体エネルギー研究所 半導体装置
JP5182600B2 (ja) * 2005-09-30 2013-04-17 セイコーエプソン株式会社 アレイ基板の製造方法
JP5090856B2 (ja) 2007-10-30 2012-12-05 株式会社ジャパンディスプレイイースト 有機ｅｌ表示装置
WO2017188106A1 (ja) * 2016-04-27 2017-11-02 シャープ株式会社 薄膜トランジスタ及び薄膜トランジスタの製造方法
WO2019176040A1 (ja) * 2018-03-15 2019-09-19 シャープ株式会社 アクティブマトリクス基板および表示デバイス
CN112802943B (zh) * 2021-01-15 2023-03-14 东莞市中麒光电技术有限公司 一种led cob模块的修复方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2924506B2 (ja) * 1992-10-27 1999-07-26 日本電気株式会社 アクティブマトリックス型液晶表示装置の画素構造
JP3212060B2 (ja) * 1993-09-20 2001-09-25 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JPH0945774A (ja) * 1995-07-28 1997-02-14 Sony Corp 薄膜半導体装置
JP3602279B2 (ja) * 1996-11-04 2004-12-15 株式会社半導体エネルギー研究所 アクティブマトリクス型表示回路およびその作製方法
JPH10223530A (ja) * 1997-02-07 1998-08-21 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Also Published As

Publication number Publication date
JP2001053287A (ja) 2001-02-23

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