JP4646894B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4646894B2
JP4646894B2 JP2006301374A JP2006301374A JP4646894B2 JP 4646894 B2 JP4646894 B2 JP 4646894B2 JP 2006301374 A JP2006301374 A JP 2006301374A JP 2006301374 A JP2006301374 A JP 2006301374A JP 4646894 B2 JP4646894 B2 JP 4646894B2
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laser
film
semiconductor film
semiconductor
substrate
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Expired - Fee Related
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JP2006301374A
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Japanese (ja)
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JP2007103957A5 (enExample
JP2007103957A (ja
Inventor
舜平 山崎
幸一郎 田中
秀和 宮入
愛子 志賀
明久 下村
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006301374A priority Critical patent/JP4646894B2/ja
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  • Recrystallisation Techniques (AREA)
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JP2006301374A 2001-09-07 2006-11-07 半導体装置の作製方法 Expired - Fee Related JP4646894B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006301374A JP4646894B2 (ja) 2001-09-07 2006-11-07 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001272751 2001-09-07
JP2001273687 2001-09-10
JP2006301374A JP4646894B2 (ja) 2001-09-07 2006-11-07 半導体装置の作製方法

Related Parent Applications (1)

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JP2002252777A Division JP3908124B2 (ja) 2001-09-07 2002-08-30 レーザー装置及びレーザー照射方法

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JP2007103957A JP2007103957A (ja) 2007-04-19
JP2007103957A5 JP2007103957A5 (enExample) 2009-01-22
JP4646894B2 true JP4646894B2 (ja) 2011-03-09

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JP2006301374A Expired - Fee Related JP4646894B2 (ja) 2001-09-07 2006-11-07 半導体装置の作製方法

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7428481B2 (ja) * 2019-06-07 2024-02-06 住友重機械工業株式会社 レーザアニール方法及びレーザ制御装置
KR102758857B1 (ko) * 2021-12-28 2025-01-24 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150238A (en) * 1979-05-10 1980-11-22 Matsushita Electric Ind Co Ltd Method of irradiating laser beam
JPS6180814A (ja) * 1984-09-27 1986-04-24 Sony Corp 線状エネルギ−ビ−ム照射装置
JPS61179524A (ja) * 1985-02-04 1986-08-12 Toshiba Corp 多結晶シリコン膜の単結晶方法
JPH0797554B2 (ja) * 1986-06-25 1995-10-18 東京エレクトロン株式会社 ビ−ムアニ−ル装置
JPS6482636A (en) * 1987-09-25 1989-03-28 Nec Corp Gettering device by use of laser light
JP3535241B2 (ja) * 1994-11-18 2004-06-07 株式会社半導体エネルギー研究所 半導体デバイス及びその作製方法
JP3091904B2 (ja) * 1995-10-05 2000-09-25 株式会社日本製鋼所 レーザーアニール処理装置
JP2000260731A (ja) * 1999-03-10 2000-09-22 Mitsubishi Electric Corp レーザ熱処理方法、レーザ熱処理装置および半導体デバイス
JP4101409B2 (ja) * 1999-08-19 2008-06-18 シャープ株式会社 半導体装置の製造方法
JP3908129B2 (ja) * 2001-09-10 2007-04-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003332258A (ja) * 2002-05-15 2003-11-21 Sony Corp レーザアニール装置、半導体デバイス、及び半導体デバイスの製造方法。

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