JP4646894B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP4646894B2
JP4646894B2 JP2006301374A JP2006301374A JP4646894B2 JP 4646894 B2 JP4646894 B2 JP 4646894B2 JP 2006301374 A JP2006301374 A JP 2006301374A JP 2006301374 A JP2006301374 A JP 2006301374A JP 4646894 B2 JP4646894 B2 JP 4646894B2
Authority
JP
Japan
Prior art keywords
laser
film
semiconductor film
semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006301374A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007103957A5 (enrdf_load_stackoverflow
JP2007103957A (ja
Inventor
舜平 山崎
幸一郎 田中
秀和 宮入
愛子 志賀
明久 下村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2006301374A priority Critical patent/JP4646894B2/ja
Publication of JP2007103957A publication Critical patent/JP2007103957A/ja
Publication of JP2007103957A5 publication Critical patent/JP2007103957A5/ja
Application granted granted Critical
Publication of JP4646894B2 publication Critical patent/JP4646894B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Liquid Crystal (AREA)
  • Recrystallisation Techniques (AREA)
  • Lasers (AREA)
JP2006301374A 2001-09-07 2006-11-07 半導体装置の作製方法 Expired - Fee Related JP4646894B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006301374A JP4646894B2 (ja) 2001-09-07 2006-11-07 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001272751 2001-09-07
JP2001273687 2001-09-10
JP2006301374A JP4646894B2 (ja) 2001-09-07 2006-11-07 半導体装置の作製方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2002252777A Division JP3908124B2 (ja) 2001-09-07 2002-08-30 レーザー装置及びレーザー照射方法

Publications (3)

Publication Number Publication Date
JP2007103957A JP2007103957A (ja) 2007-04-19
JP2007103957A5 JP2007103957A5 (enrdf_load_stackoverflow) 2009-01-22
JP4646894B2 true JP4646894B2 (ja) 2011-03-09

Family

ID=38030513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006301374A Expired - Fee Related JP4646894B2 (ja) 2001-09-07 2006-11-07 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4646894B2 (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7428481B2 (ja) * 2019-06-07 2024-02-06 住友重機械工業株式会社 レーザアニール方法及びレーザ制御装置
KR102758857B1 (ko) * 2021-12-28 2025-01-24 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150238A (en) * 1979-05-10 1980-11-22 Matsushita Electric Ind Co Ltd Method of irradiating laser beam
JPS6180814A (ja) * 1984-09-27 1986-04-24 Sony Corp 線状エネルギ−ビ−ム照射装置
JPS61179524A (ja) * 1985-02-04 1986-08-12 Toshiba Corp 多結晶シリコン膜の単結晶方法
JPH0797554B2 (ja) * 1986-06-25 1995-10-18 東京エレクトロン株式会社 ビ−ムアニ−ル装置
JPS6482636A (en) * 1987-09-25 1989-03-28 Nec Corp Gettering device by use of laser light
JP3535241B2 (ja) * 1994-11-18 2004-06-07 株式会社半導体エネルギー研究所 半導体デバイス及びその作製方法
JP3091904B2 (ja) * 1995-10-05 2000-09-25 株式会社日本製鋼所 レーザーアニール処理装置
JP2000260731A (ja) * 1999-03-10 2000-09-22 Mitsubishi Electric Corp レーザ熱処理方法、レーザ熱処理装置および半導体デバイス
JP4101409B2 (ja) * 1999-08-19 2008-06-18 シャープ株式会社 半導体装置の製造方法
JP3908129B2 (ja) * 2001-09-10 2007-04-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003332258A (ja) * 2002-05-15 2003-11-21 Sony Corp レーザアニール装置、半導体デバイス、及び半導体デバイスの製造方法。

Also Published As

Publication number Publication date
JP2007103957A (ja) 2007-04-19

Similar Documents

Publication Publication Date Title
JP4127565B2 (ja) 半導体装置の作製方法
JP3980465B2 (ja) 半導体装置の作製方法
US8044372B2 (en) Laser apparatus, laser irradiation method, semiconductor manufacturing method, semiconductor device, and electronic equipment
JP3949564B2 (ja) レーザ照射装置及び半導体装置の作製方法
US6844523B2 (en) Laser apparatus, laser irradiation method, manufacturing method for a semiconductor device, semiconductor device and electronic equipment
JP2004179474A6 (ja) レーザー照射装置
JP2004158720A6 (ja) レーザー装置及びレーザー照射方法
US20070020897A1 (en) Manufacturing method of semiconductor device
JP3973882B2 (ja) レーザ照射装置およびレーザ照射方法
JP3908124B2 (ja) レーザー装置及びレーザー照射方法
JP4646894B2 (ja) 半導体装置の作製方法
JP3908129B2 (ja) 半導体装置の作製方法
JP3908128B2 (ja) 半導体装置の作製方法
JP3892368B2 (ja) レーザー装置及びレーザー照射方法
JP3908153B2 (ja) 半導体装置の作製方法
JP3883935B2 (ja) レーザ照射装置
JP4579217B2 (ja) 半導体装置の作製方法
JP3883936B2 (ja) レーザ照射方法および半導体装置の作製方法
JP4397582B2 (ja) 半導体装置の作製方法
JP4515088B2 (ja) 半導体装置の作製方法
JP4762121B2 (ja) レーザ照射方法、及び半導体装置の作製方法
JP3949709B2 (ja) レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法
JP4566504B2 (ja) レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法
JP4159858B2 (ja) 半導体装置の作製方法
JP2004200559A6 (ja) レーザ照射方法および半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081201

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100727

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100729

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100831

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101012

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101111

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20101130

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20101207

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131217

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131217

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees