JP4641423B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP4641423B2 JP4641423B2 JP2005018882A JP2005018882A JP4641423B2 JP 4641423 B2 JP4641423 B2 JP 4641423B2 JP 2005018882 A JP2005018882 A JP 2005018882A JP 2005018882 A JP2005018882 A JP 2005018882A JP 4641423 B2 JP4641423 B2 JP 4641423B2
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Description
半田ボールを用いて基材に取り付けられる半導体装置であって、
放熱部材と、
前記放熱部材上に設けられ、かつ前記半導体装置が前記基材に取り付けられた後に前記放熱部材上から除去され、前記放熱部材からの放熱を抑制する放熱防止部材と、
を備えることを特徴とする半導体装置、が提供される。
また、本発明によれば、
半田ボールを用いて基材に取り付けられる半導体装置であって、
放熱部材と、
前記放熱部材上に接着剤により除去可能に設けられ、前記放熱部材からの放熱を抑制する放熱防止部材と、
を備え、
前記放熱防止部材は光を透過させる性質を有し、
前記接着剤は前記光に照射されることで軟化する性質を有することを特徴とする半導体装置、が提供される。
半導体素子が設けられた半導体基板と、
前記半導体基板上に設けられた放熱部材と、
前記放熱部材上に設けられ、前記放熱部材からの放熱を抑制する放熱防止部材と、
を備え、
前記放熱防止部材は、前記半導体基板及び前記放熱部材が基材に搭載された後に前記放熱部材上から除去されることを特徴とする半導体装置、が提供される。
また、本発明によれば、
半導体素子が設けられた半導体基板と、
前記半導体基板上に設けられた放熱部材と、
前記放熱部材上に接着剤により除去可能に設けられ、前記放熱部材からの放熱を抑制する放熱防止部材と、
を備え、
前記放熱防止部材は光を透過させる性質を有し、
前記接着剤は前記光に照射されることで軟化する性質を有することを特徴とする半導体装置、が提供される。
半導体素子が設けられた半導体基板と、放熱部材とが、この順に積層してなる半導体装置の製造方法であって、
前記半導体装置の基材への装着前に前記放熱部材に放熱防止部材を設ける工程と、
前記半導体装置の前記基材への装着後に前記放熱部材から前記放熱防止部材を除去する工程と、
を含むことを特徴とする半導体装置の製造方法、が提供される。
図1は、本実施形態に係る半導体装置の構成ならびに製造工程を説明するための断面図である。図1(a)は、本実施形態に係る半導体装置の断面図である。
図2は、本実施形態に係る半導体装置の構成ならびに製造工程を説明するための断面図である。図2(a)は、本実施形態に係る半導体装置の断面図である。
図3は、本実施形態に係る半導体装置の構成を示す断面図である。
101 半導体パッケージ
102 素子形成層
104 シリコン基板
106 半田ボール
108 ヒートスプレッター
110 低熱伝導率板
112 基板
114 接着剤
116 ネジ
120 半導体パッケージ
121 半導体パッケージ
122 低熱伝導率板
124 光
126 接着剤
130 半導体パッケージ
132 ヒートスプレッター
134 低熱伝導率板
142 外壁
144 中空部分
146 半導体チップ
148 ワイヤボンディング
150 半導体装置
151 低熱伝導率板
152 接着剤
153 ヒートスプレッター
154 半導体パッケージ基板
155 半導体チップ
156 半田ボール
157 基板
158 半導体パッケージ
159 ネジ
160 半導体装置
161 低熱伝導率板
162 接着剤
163 ヒートスプレッター
164 補強材
165 半導体チップ
166 半導体パッケージ基板
167 半田ボール
168 基板
169 半導体パッケージ
Claims (12)
- 半田ボールを用いて基材に取り付けられる半導体装置であって、
放熱部材と、
前記放熱部材上に設けられ、かつ前記半導体装置が前記基材に取り付けられた後に前記放熱部材上から除去され、前記放熱部材からの放熱を抑制する放熱防止部材と、
を備えることを特徴とする半導体装置。 - 半導体素子が設けられた半導体基板と、
前記半導体基板上に設けられた放熱部材と、
前記放熱部材上に設けられ、前記放熱部材からの放熱を抑制する放熱防止部材と、
を備え、
前記放熱防止部材は、前記半導体基板及び前記放熱部材が基材に搭載された後に前記放熱部材上から除去されることを特徴とする半導体装置。 - 半田ボールを用いて基材に取り付けられる半導体装置であって、
放熱部材と、
前記放熱部材上に接着剤により除去可能に設けられ、前記放熱部材からの放熱を抑制する放熱防止部材と、
を備え、
前記放熱防止部材は光を透過させる性質を有し、
前記接着剤は前記光に照射されることで軟化する性質を有することを特徴とする半導体装置。 - 半導体素子が設けられた半導体基板と、
前記半導体基板上に設けられた放熱部材と、
前記放熱部材上に接着剤により除去可能に設けられ、前記放熱部材からの放熱を抑制する放熱防止部材と、
を備え、
前記放熱防止部材は光を透過させる性質を有し、
前記接着剤は前記光に照射されることで軟化する性質を有することを特徴とする半導体装置。 - 請求項3または4に記載の半導体装置であって、
前記光が紫外線であることを特徴とする半導体装置。 - 請求項1または2に記載の半導体装置であって、
前記放熱部材と前記放熱防止部材とに設けられた凹凸形状を嵌合させることにより、前記放熱防止部材は前記放熱部材上に固定されることを特徴とする半導体装置。 - 請求項1〜6のいずれか一項に記載の半導体装置であって、
前記放熱防止部材は、前記放熱部材の上面を覆うように設けられることを特徴とする半導体装置。 - 半導体素子が設けられた半導体基板と、放熱部材とが、この順に積層してなる半導体装置の製造方法であって、
前記半導体装置の基材への装着前に前記放熱部材に放熱防止部材を設ける工程と、
前記半導体装置の前記基材への装着後に前記放熱部材から前記放熱防止部材を除去する工程と、
を含むことを特徴とする半導体装置の製造方法。 - 請求項8に記載の半導体装置の製造方法において、
前記放熱防止部材は前記放熱部材に接着剤を用いて取り付けられ、
前記放熱防止部材は光を透過させる性質を有し、
前記接着剤は前記光に照射されることで軟化する性質を有することを特徴とする半導体装置の製造方法。 - 請求項9に記載の半導体装置の製造方法において、
前記光が紫外線であることを特徴とする半導体装置の製造方法。 - 請求項8に記載の半導体装置の製造方法において、
前記放熱部材と前記放熱防止部材とには凹凸形状が設けられており、
前記放熱部材に前記放熱防止部材を設ける工程において、前記放熱部材と前記放熱防止部材とを嵌合させることにより、前記放熱部材に前記放熱防止部材を設けることを特徴とする半導体装置の製造方法。 - 請求項8〜11のいずれか一項に記載の半導体装置の製造方法において、
前記放熱防止部材は、前記放熱部材の上面を覆うように設けられることを特徴とする半導体装置の製造方法。
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US11/060,495 US7525804B2 (en) | 2004-02-18 | 2005-02-18 | Semiconductor device and method of manufacturing the same |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2008053693A (ja) * | 2006-07-28 | 2008-03-06 | Sanyo Electric Co Ltd | 半導体モジュール、携帯機器、および半導体モジュールの製造方法 |
US10120423B1 (en) * | 2015-09-09 | 2018-11-06 | Amazon Technologies, Inc. | Unibody thermal enclosure |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04150060A (ja) * | 1990-10-12 | 1992-05-22 | Nec Corp | 半導体装置 |
JP2000106495A (ja) * | 1998-09-29 | 2000-04-11 | Kitagawa Ind Co Ltd | 電気電子器具の内部構造 |
JP2002246516A (ja) * | 2001-02-15 | 2002-08-30 | Nec Eng Ltd | Icパッケージ |
JP2002343838A (ja) * | 2001-05-14 | 2002-11-29 | Nec Corp | 半導体チップ、その取り外し方法および半導体装置 |
JP2004006682A (ja) * | 2002-03-27 | 2004-01-08 | Seiko Epson Corp | 半導体装置の実装方法 |
JP2005354000A (ja) * | 2004-06-14 | 2005-12-22 | Toyota Motor Corp | 電力用半導体装置 |
JP2006032684A (ja) * | 2004-07-16 | 2006-02-02 | Hitachi Cable Ltd | 電子機器の放熱筐体 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3489203A (en) * | 1967-06-01 | 1970-01-13 | Us Navy | Controlled heat pipe |
JPS6030994A (ja) * | 1983-07-29 | 1985-02-16 | Nec Corp | ヒ−トパイプ装置 |
JPS6246273A (ja) * | 1985-08-23 | 1987-02-28 | Fujitsu Ltd | 真空温度試験装置 |
US5182632A (en) * | 1989-11-22 | 1993-01-26 | Tactical Fabs, Inc. | High density multichip package with interconnect structure and heatsink |
US5591034A (en) * | 1994-02-14 | 1997-01-07 | W. L. Gore & Associates, Inc. | Thermally conductive adhesive interface |
US5834337A (en) * | 1996-03-21 | 1998-11-10 | Bryte Technologies, Inc. | Integrated circuit heat transfer element and method |
JPH11511909A (ja) * | 1996-06-21 | 1999-10-12 | サーマロイ,インコーポレイテッド | 保護コーティングを有する放熱子へのグリースの予め塗布 |
KR100433857B1 (ko) * | 1996-09-17 | 2004-06-04 | 마츠시타 덴끼 산교 가부시키가이샤 | 아이씨칩의 조립 방법, 조립장치 및 그에 사용하는 테이프형 지지체 |
US5875096A (en) * | 1997-01-02 | 1999-02-23 | At&T Corp. | Apparatus for heating and cooling an electronic device |
TW358565U (en) * | 1997-12-01 | 1999-05-11 | Hon Hai Prec Ind Co Ltd | Protection back lid for heat transfer dielectric plate |
TW359383U (en) * | 1997-12-19 | 1999-05-21 | Hon Hai Prec Ind Co Ltd | Protection cover for heat transfer dielectrics |
DE19835305A1 (de) * | 1998-08-05 | 2000-02-10 | Inst Luft Kaeltetech Gem Gmbh | Selbstauslösender Kryo-Wärmestromschalter |
US6644395B1 (en) * | 1999-11-17 | 2003-11-11 | Parker-Hannifin Corporation | Thermal interface material having a zone-coated release linear |
JP2001210761A (ja) | 2000-01-24 | 2001-08-03 | Shinko Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US6424533B1 (en) * | 2000-06-29 | 2002-07-23 | International Business Machines Corporation | Thermoelectric-enhanced heat spreader for heat generating component of an electronic device |
US7042084B2 (en) * | 2002-01-02 | 2006-05-09 | Intel Corporation | Semiconductor package with integrated heat spreader attached to a thermally conductive substrate core |
JP4488686B2 (ja) * | 2003-03-12 | 2010-06-23 | 日東電工株式会社 | 紫外線照射方法およびそれを用いた装置 |
US20040227230A1 (en) * | 2003-05-13 | 2004-11-18 | Ming-Ching Chou | Heat spreaders |
US6829145B1 (en) * | 2003-09-25 | 2004-12-07 | International Business Machines Corporation | Separable hybrid cold plate and heat sink device and method |
US20050099776A1 (en) * | 2003-11-12 | 2005-05-12 | Xue Liang A. | Passive thermal switch |
CN2681331Y (zh) * | 2003-12-26 | 2005-02-23 | 鸿富锦精密工业(深圳)有限公司 | 散热装置 |
US6935420B1 (en) * | 2004-06-16 | 2005-08-30 | Hon Hai Precision Ind. Co., Ltd. | Heat dissipation assembly |
CN2727961Y (zh) * | 2004-08-25 | 2005-09-21 | 鸿富锦精密工业(深圳)有限公司 | 散热装置 |
US7361985B2 (en) * | 2004-10-27 | 2008-04-22 | Freescale Semiconductor, Inc. | Thermally enhanced molded package for semiconductors |
-
2005
- 2005-01-26 JP JP2005018882A patent/JP4641423B2/ja not_active Expired - Fee Related
- 2005-02-18 US US11/060,495 patent/US7525804B2/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04150060A (ja) * | 1990-10-12 | 1992-05-22 | Nec Corp | 半導体装置 |
JP2000106495A (ja) * | 1998-09-29 | 2000-04-11 | Kitagawa Ind Co Ltd | 電気電子器具の内部構造 |
JP2002246516A (ja) * | 2001-02-15 | 2002-08-30 | Nec Eng Ltd | Icパッケージ |
JP2002343838A (ja) * | 2001-05-14 | 2002-11-29 | Nec Corp | 半導体チップ、その取り外し方法および半導体装置 |
JP2004006682A (ja) * | 2002-03-27 | 2004-01-08 | Seiko Epson Corp | 半導体装置の実装方法 |
JP2005354000A (ja) * | 2004-06-14 | 2005-12-22 | Toyota Motor Corp | 電力用半導体装置 |
JP2006032684A (ja) * | 2004-07-16 | 2006-02-02 | Hitachi Cable Ltd | 電子機器の放熱筐体 |
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