JP4640322B2 - 光電変換素子及びその製造方法、並びに電気化学セルの製造方法 - Google Patents
光電変換素子及びその製造方法、並びに電気化学セルの製造方法 Download PDFInfo
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- 238000006243 chemical reaction Methods 0.000 title claims description 24
- 229910044991 metal oxide Inorganic materials 0.000 claims description 33
- 150000004706 metal oxides Chemical class 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 23
- 230000002209 hydrophobic effect Effects 0.000 claims description 21
- 239000004020 conductor Substances 0.000 claims description 11
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- 238000002508 contact lithography Methods 0.000 claims description 9
- 238000007641 inkjet printing Methods 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 7
- 239000000725 suspension Substances 0.000 claims description 4
- 238000009832 plasma treatment Methods 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 229920001940 conductive polymer Polymers 0.000 claims description 2
- 238000003851 corona treatment Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- 238000011282 treatment Methods 0.000 claims description 2
- 238000001771 vacuum deposition Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910000484 niobium oxide Inorganic materials 0.000 claims 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 1
- 229910001887 tin oxide Inorganic materials 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 229910001930 tungsten oxide Inorganic materials 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 42
- 238000005516 engineering process Methods 0.000 description 6
- 238000000059 patterning Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 239000004205 dimethyl polysiloxane Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 3
- -1 polydimethylsiloxane Polymers 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004971 Cross linker Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- DKNPRRRKHAEUMW-UHFFFAOYSA-N Iodine aqueous Chemical compound [K+].I[I-]I DKNPRRRKHAEUMW-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 230000032900 absorption of visible light Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- UHPJWJRERDJHOJ-UHFFFAOYSA-N ethene;naphthalene-1-carboxylic acid Chemical compound C=C.C1=CC=C2C(C(=O)O)=CC=CC2=C1 UHPJWJRERDJHOJ-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 125000003396 thiol group Chemical class [H]S* 0.000 description 1
- VIFIHLXNOOCGLJ-UHFFFAOYSA-N trichloro(3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecyl)silane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CC[Si](Cl)(Cl)Cl VIFIHLXNOOCGLJ-UHFFFAOYSA-N 0.000 description 1
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- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
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Description
また、本発明の第1の態様によれば、色素増感太陽電池の製造においてパターン構造を製造する方法が提供される。この方法は、第1の導電性の層を基板上に堆積させる工程と、ソフトコンタクトプリンティングを行って、パターン化テンプレート層を前記第1の導電性の層上に形成して、これにより、相互に間隔を空けて配列された隣接セルのパターン配列を前記第1の導電性の層上に形成する工程と、前記隣接セルのパターン配列中の複数のセル上に金属酸化物粒子分散液をインクジェット印刷して、パターニングされた金属酸化層を形成する工程と、を含む。
また、本発明の一態様の光電変換素子の製造方法は、スタンプの上に疎水性材料を配置する工程と、前記疎水性材料を親水性の導電性材料に接触させ、前記導電性材料の上に前記疎水性材料のパターンを形成する工程と、金属酸化物粒子分散液を前記疎水性材料のパターンが形成された前記導電性材料の上にインクジェット印刷する工程と、を含む。また、本発明の一態様の電気化学セルの製造方法も同様の工程を含む。
Claims (16)
- 第1の導電性の層を基板の上に堆積させる工程と、
ソフトコンタクトプリンティングを行って、疎水性のパターン化テンプレート層を親水性の前記第1の導電性の層の上に形成して、相互に間隔を空けて配列された複数のセルを前記第1の導電性の層の上に形成する工程と、
前記複数のセルの上に金属酸化物粒子分散液をインクジェット印刷して、パターニングされた金属酸化層を形成する工程と、
を含む、光電変換素子の製造方法。 - 前記複数のセルは、実質的に0.2μm〜20μmの最大間隔で相互に間隔空けされて配置される、請求項1に記載の光電変換素子の製造方法。
- 前記複数のセルのパターン配列はグリッド状である、請求項1乃至2のいずれか1つに記載の光電変換素子の製造方法。
- 前記複数のセルの各々は、実質的に方形、矩形、円形または六角形の形状にされる、請求項1乃至3のいずれか1つに記載の光電変換素子の製造方法。
- 前記金属酸化物粒子分散液は、二酸化チタンコロイド懸濁液を含む、請求項1乃至4のいずれか1つに記載の光電変換素子の製造方法。
- 請求項1乃至5のいずれか1つに記載の光電変換素子の製造方法により製造された光電変換素子。
- スタンプの上に疎水性材料を配置する工程と、
前記疎水性材料を親水性の導電性材料に接触させ、前記導電性材料の上に前記疎水性材料のパターンを形成する工程と、
金属酸化物粒子分散液を前記疎水性材料のパターンが形成された前記導電性材料の上にインクジェット印刷する工程と、
を含む、光電変換素子の製造方法。 - 前記導電性材料を基体の上に堆積させる工程をさらに含む、請求項7に記載の光電変換素子の製造方法。
- 前記導電性材料の表面を親水性にする工程を含む、請求項7または8に記載の光電変換素子の製造方法。
- 前記導電性材料の表面を親水性にする工程は、酸素プラズマ処理、コロナ放電処理、紫外オゾン処理、化学反応、コーティング、および真空蒸着のうちの少なくとも1つを行う工程を含む、請求項7乃至9のいずれか1つに記載の光電変換素子の製造方法。
- 前記導電性材料は、金属、導電性の酸化物、および導電性のポリマーのうちの少なくとも1つを含む、請求項7乃至10のいずれか1つに記載の光電変換素子の製造方法。
- 前記金属酸化物粒子分散液は、酸化チタン、酸化錫、酸化亜鉛、酸化ニオブ、酸化タングステン、及びチタン酸ストロンチウムのうちの少なくとも1つを含む、請求項7乃至11のいずれか1つに記載の光電変換素子の製造方法。
- 機能染料層を形成する工程をさらに含む、請求項7乃至12のいずれか1つに記載の光電変換素子の製造方法。
- 対極を設ける工程をさらに含む、請求項7乃至13のいずれか1つに記載の光電変換素子の製造方法。
- 請求項7乃至14のいずれか1つに記載の光電変換素子の製造方法により製造された光電変換素子。
- スタンプの上に疎水性材料を配置する工程と、
前記疎水性材料を親水性の導電性材料に接触させ、前記導電性材料の上に前記疎水性材料のパターンを形成する工程と、
金属酸化物粒子分散液を前記疎水性材料のパターンが形成された前記導電性材料の上にインクジェット印刷する工程と、
を含む、電気化学セルの製造方法。
Applications Claiming Priority (1)
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GB0524077A GB2432723B (en) | 2005-11-25 | 2005-11-25 | Electrochemical cell and method of manufacture |
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JP2007149680A JP2007149680A (ja) | 2007-06-14 |
JP4640322B2 true JP4640322B2 (ja) | 2011-03-02 |
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Country Status (4)
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US (1) | US20070122927A1 (ja) |
JP (1) | JP4640322B2 (ja) |
KR (1) | KR20070055400A (ja) |
GB (1) | GB2432723B (ja) |
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US8227687B2 (en) * | 2009-02-04 | 2012-07-24 | Honeywell International Inc. | Quantum dot solar cell |
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US20100294367A1 (en) * | 2009-05-19 | 2010-11-25 | Honeywell International Inc. | Solar cell with enhanced efficiency |
US8426728B2 (en) | 2009-06-12 | 2013-04-23 | Honeywell International Inc. | Quantum dot solar cells |
US20100326499A1 (en) * | 2009-06-30 | 2010-12-30 | Honeywell International Inc. | Solar cell with enhanced efficiency |
WO2011002256A2 (ko) * | 2009-07-02 | 2011-01-06 | 건국대학교 산학협력단 | 롤투롤 연속공정을 통한 염료감응형 태양전지의 생산장치 및 생산방법 |
US8211744B2 (en) * | 2009-11-20 | 2012-07-03 | Electronics And Telecommunications Research Institute | Methods of forming nano structure and methods of forming solar cell using the same |
US20110139248A1 (en) * | 2009-12-11 | 2011-06-16 | Honeywell International Inc. | Quantum dot solar cells and methods for manufacturing solar cells |
US8372678B2 (en) * | 2009-12-21 | 2013-02-12 | Honeywell International Inc. | Counter electrode for solar cell |
US20110155233A1 (en) * | 2009-12-29 | 2011-06-30 | Honeywell International Inc. | Hybrid solar cells |
WO2014097181A1 (en) | 2012-12-19 | 2014-06-26 | Basf Se | Detector for optically detecting at least one object |
EP3008485A1 (en) | 2013-06-13 | 2016-04-20 | Basf Se | Detector for optically detecting at least one object |
JP6440696B2 (ja) | 2013-06-13 | 2018-12-19 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | 少なくとも1つの物体の方位を光学的に検出する検出器 |
US9741954B2 (en) | 2013-06-13 | 2017-08-22 | Basf Se | Optical detector and method for manufacturing the same |
KR20160044009A (ko) | 2013-08-19 | 2016-04-22 | 바스프 에스이 | 하나 이상의 물체의 위치를 결정하기 위한 검출기 |
JP6403776B2 (ja) | 2013-08-19 | 2018-10-10 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | 光学検出器 |
US11041718B2 (en) | 2014-07-08 | 2021-06-22 | Basf Se | Detector for determining a position of at least one object |
WO2016051323A1 (en) | 2014-09-29 | 2016-04-07 | Basf Se | Detector for optically determining a position of at least one object |
JP6637980B2 (ja) | 2014-12-09 | 2020-01-29 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | 光学検出器 |
EP3251152B1 (en) | 2015-01-30 | 2023-08-16 | Trinamix GmbH | Detector for an optical detection of at least one object |
JP6877418B2 (ja) | 2015-07-17 | 2021-05-26 | トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング | 少なくとも1個の対象物を光学的に検出するための検出器 |
US10412283B2 (en) | 2015-09-14 | 2019-09-10 | Trinamix Gmbh | Dual aperture 3D camera and method using differing aperture areas |
US11211513B2 (en) | 2016-07-29 | 2021-12-28 | Trinamix Gmbh | Optical sensor and detector for an optical detection |
JP2019532517A (ja) | 2016-10-25 | 2019-11-07 | トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング | 光学的に検出するための光検出器 |
EP3532864A1 (en) | 2016-10-25 | 2019-09-04 | trinamiX GmbH | Detector for an optical detection of at least one object |
JP2020500310A (ja) | 2016-11-17 | 2020-01-09 | トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング | 少なくとも1つの物体を光学的に検出するための検出器 |
US11860292B2 (en) | 2016-11-17 | 2024-01-02 | Trinamix Gmbh | Detector and methods for authenticating at least one object |
US11060922B2 (en) | 2017-04-20 | 2021-07-13 | Trinamix Gmbh | Optical detector |
CN110998223B (zh) | 2017-06-26 | 2021-10-29 | 特里纳米克斯股份有限公司 | 用于确定至少一个对像的位置的检测器 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000268891A (ja) * | 1999-03-19 | 2000-09-29 | Toshiba Corp | 多色色素増感透明半導体電極部材とその製造方法、多色色素増感型太陽電池、及び表示素子 |
Family Cites Families (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5654581A (en) * | 1979-10-11 | 1981-05-14 | Ricoh Co Ltd | Recording medium for ink-jet recording |
CH674596A5 (ja) * | 1988-02-12 | 1990-06-15 | Sulzer Ag | |
DE19514156A1 (de) * | 1995-04-15 | 1996-10-24 | Heidelberger Druckmasch Ag | Photochemische Zelle |
US6069313A (en) * | 1995-10-31 | 2000-05-30 | Ecole Polytechnique Federale De Lausanne | Battery of photovoltaic cells and process for manufacturing same |
US6096313A (en) * | 1996-02-09 | 2000-08-01 | Ludwig Institute For Cancer Research | Compositions containing immunogenic molecules and granulocyte-macrophage colony stimulating factor, as an adjuvant |
EP0855726B1 (en) * | 1997-01-22 | 2006-01-25 | Greatcell Solar S.A. | Solar cell and process of making same |
JP3630551B2 (ja) * | 1998-04-02 | 2005-03-16 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
DE19815611A1 (de) * | 1998-04-07 | 1999-10-14 | Riedel De Haen Gmbh | Verfahren zur Herstellung von Lithium-Metall-Oxiden |
US20030148024A1 (en) * | 2001-10-05 | 2003-08-07 | Kodas Toivo T. | Low viscosity precursor compositons and methods for the depositon of conductive electronic features |
US6406750B1 (en) * | 1999-05-28 | 2002-06-18 | Osaka Municipal Government | Process of forming catalyst nuclei on substrate, process of electroless-plating substrate, and modified zinc oxide film |
EP1133789B1 (en) * | 1999-07-09 | 2008-11-05 | Institute of Materials Research and Engineering | Mechanical patterning of a device layer |
US6294398B1 (en) * | 1999-11-23 | 2001-09-25 | The Trustees Of Princeton University | Method for patterning devices |
JP3473605B2 (ja) * | 2000-02-18 | 2003-12-08 | 株式会社ブリヂストン | 太陽電池の製造方法 |
US6706963B2 (en) * | 2002-01-25 | 2004-03-16 | Konarka Technologies, Inc. | Photovoltaic cell interconnection |
US7022910B2 (en) * | 2002-03-29 | 2006-04-04 | Konarka Technologies, Inc. | Photovoltaic cells utilizing mesh electrodes |
JP2002079774A (ja) * | 2000-06-26 | 2002-03-19 | Fuji Photo Film Co Ltd | 平版印刷方法、印刷用原板及び印刷装置 |
EP1180774B1 (en) * | 2000-08-15 | 2006-10-11 | Fuji Photo Film Co., Ltd. | Photoelectric conversion device and method for producing same |
GB0024294D0 (en) * | 2000-10-04 | 2000-11-15 | Univ Cambridge Tech | Solid state embossing of polymer devices |
NL1016779C2 (nl) * | 2000-12-02 | 2002-06-04 | Cornelis Johannes Maria V Rijn | Matrijs, werkwijze voor het vervaardigen van precisieproducten met behulp van een matrijs, alsmede precisieproducten, in het bijzonder microzeven en membraanfilters, vervaardigd met een dergelijke matrijs. |
US6736484B2 (en) * | 2001-12-14 | 2004-05-18 | Seiko Epson Corporation | Liquid drop discharge method and discharge device; electro optical device, method of manufacture thereof, and device for manufacture thereof; color filter method of manufacture thereof, and device for manufacturing thereof; and device incorporating backing, method of manufacturing thereof, and device for manufacture thereof |
US7253355B2 (en) * | 2001-12-20 | 2007-08-07 | Rwe Schott Solar Gmbh | Method for constructing a layer structure on a substrate |
CA2474494A1 (en) * | 2002-01-25 | 2003-08-07 | Savvas E. Hadjikyriacou | Photovoltaic cell components and materials |
KR20030065957A (ko) * | 2002-02-02 | 2003-08-09 | 한국전자통신연구원 | 폴리비닐리덴 플로라이드 함유 겔형 고분자 전해질을포함하는 염료감응 태양전지 |
JP4260494B2 (ja) * | 2002-02-26 | 2009-04-30 | 株式会社フジクラ | 透明電極用基材の製法、光電変換素子の製法、及び色素増感太陽電池の製法 |
KR100437533B1 (ko) * | 2002-05-29 | 2004-06-30 | 엘지.필립스 엘시디 주식회사 | 액티브 매트릭스형 유기전계발광 소자 및 그의 제조방법 |
EP1376697A1 (en) * | 2002-06-17 | 2004-01-02 | CSEM Centre Suisse d'Electronique et de Microtechnique SA | Integrated-optical microsystem based on organic semiconductors |
US7078702B2 (en) * | 2002-07-25 | 2006-07-18 | General Electric Company | Imager |
AU2003254820A1 (en) * | 2002-08-13 | 2004-03-03 | Bridgestone Corporation | Improvement of dye-sensitized solar cell |
JP2005010804A (ja) * | 2002-09-20 | 2005-01-13 | Seiko Epson Corp | 光学デバイス及びその製造方法、表示装置、電子機器、並びに検査機器 |
US7145071B2 (en) * | 2002-12-11 | 2006-12-05 | General Electric Company | Dye sensitized solar cell having finger electrodes |
US7019209B2 (en) * | 2002-12-11 | 2006-03-28 | General Electric Company | Structured dye sensitized solar cell |
US7179988B2 (en) * | 2002-12-11 | 2007-02-20 | General Electric Company | Dye sensitized solar cells having foil electrodes |
GB0229191D0 (en) * | 2002-12-14 | 2003-01-22 | Plastic Logic Ltd | Embossing of polymer devices |
JP4119267B2 (ja) * | 2003-01-23 | 2008-07-16 | 株式会社東芝 | 光増感型太陽電池 |
US7265037B2 (en) * | 2003-06-20 | 2007-09-04 | The Regents Of The University Of California | Nanowire array and nanowire solar cells and methods for forming the same |
GB0315477D0 (en) * | 2003-07-02 | 2003-08-06 | Plastic Logic Ltd | Rectifying diodes |
US7545010B2 (en) * | 2003-08-08 | 2009-06-09 | Canon Kabushiki Kaisha | Catalytic sensor structure |
JP4093156B2 (ja) * | 2003-09-11 | 2008-06-04 | セイコーエプソン株式会社 | 半導体装置製造用治具、半導体装置製造方法および半導体装置 |
US20050153114A1 (en) * | 2004-01-14 | 2005-07-14 | Rahul Gupta | Printing of organic electronic devices |
JP2005243499A (ja) * | 2004-02-27 | 2005-09-08 | Fujitsu Ltd | フラットディスプレイパネルの電極形成方法 |
EP1589548A1 (en) * | 2004-04-23 | 2005-10-26 | Sony Deutschland GmbH | A method of producing a porous semiconductor film on a substrate |
US20060021647A1 (en) * | 2004-07-28 | 2006-02-02 | Gui John Y | Molecular photovoltaics, method of manufacture and articles derived therefrom |
US7977253B2 (en) * | 2004-08-31 | 2011-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US20090078370A1 (en) * | 2004-08-31 | 2009-03-26 | Vladislav Sklyarevich | Method of separating non-metallic material using microwave radiation |
US7071417B2 (en) * | 2004-10-25 | 2006-07-04 | Demodulation, Inc. | Optically encoded glass-coated microwire |
GB0523163D0 (en) * | 2005-11-14 | 2005-12-21 | Suisse Electronique Microtech | Patterning of conductive layers with underlying compressible spacer layer or spacer layer stack |
IT1394959B1 (it) * | 2009-07-28 | 2012-07-27 | St Microelectronics Srl | Fabbricazione di interconnessioni verticali in stack di integrazione, contattate da strato metallico superiore depositato |
JP2011054598A (ja) * | 2009-08-31 | 2011-03-17 | Toshiba Corp | 半導体発光素子およびその製造方法 |
-
2005
- 2005-11-25 GB GB0524077A patent/GB2432723B/en not_active Expired - Fee Related
-
2006
- 2006-11-14 US US11/598,775 patent/US20070122927A1/en not_active Abandoned
- 2006-11-22 JP JP2006316011A patent/JP4640322B2/ja not_active Expired - Fee Related
- 2006-11-24 KR KR1020060116945A patent/KR20070055400A/ko not_active Application Discontinuation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000268891A (ja) * | 1999-03-19 | 2000-09-29 | Toshiba Corp | 多色色素増感透明半導体電極部材とその製造方法、多色色素増感型太陽電池、及び表示素子 |
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US20070122927A1 (en) | 2007-05-31 |
KR20070055400A (ko) | 2007-05-30 |
GB2432723B (en) | 2010-12-08 |
GB0524077D0 (en) | 2006-01-04 |
JP2007149680A (ja) | 2007-06-14 |
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