JP4637033B2 - 出力2分岐型固体撮像素子及び撮像装置 - Google Patents
出力2分岐型固体撮像素子及び撮像装置 Download PDFInfo
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- JP4637033B2 JP4637033B2 JP2006047078A JP2006047078A JP4637033B2 JP 4637033 B2 JP4637033 B2 JP 4637033B2 JP 2006047078 A JP2006047078 A JP 2006047078A JP 2006047078 A JP2006047078 A JP 2006047078A JP 4637033 B2 JP4637033 B2 JP 4637033B2
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- 238000003384 imaging method Methods 0.000 title claims description 54
- 238000012546 transfer Methods 0.000 claims description 243
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- 238000006243 chemical reaction Methods 0.000 claims description 13
- 238000012937 correction Methods 0.000 claims description 10
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
- H01L27/14837—Frame-interline transfer
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- H01L27/144—Devices controlled by radiation
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- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
- H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
Description
半導体基板表面の水平方向には、各フォトダイオード101を避けるように蛇行して垂直転送電極が敷設されている。半導体基板には垂直方向に並ぶフォトダイオード列の側部に図示しない埋め込みチャネルが、フォトダイオード101を避けるように垂直方向に蛇行して形成されている。この埋め込みチャネルと、この上に設けられ垂直方向に蛇行して配置される垂直転送電極とで、垂直転送路(VCCD)102が形成される。
本実施形態では、ラインメモリ108を設けた出力2分岐型固体撮像素子を図示したが、ラインメモリ108を用いずに、垂直転送路102を転送されてきた信号電荷を水平転送路103に直接受け渡す構成でも良い。また、ハニカム画素配置のカラー固体撮像素子100について説明したが、フォトダイオードを正方格子状に配置し、カラーフィルタをベイヤー配列した固体撮像素子でも良い。
101 フォトダイオード
102 垂直転送路(VCCD)
103 水平転送路(HCCD)
103a,104a,105a 転送路の第1層電極膜
103b,104b,105b 転送路の第2層電極膜
103e,103f 水平転送路端部(チャネル幅を絞った部分)
104 第1分岐転送路
105 第2分岐転送路
106,107 出力アンプ
108 ラインメモリ
120 電荷振り分け部(分岐部)
120a 分岐部における扁平三角形状の電荷振り分け電極(第1層電極)
120b 分岐部の電荷振り分け電極(第2層電極)
Claims (8)
- 第1色光の受光量に応じた信号電荷を蓄積する複数の光電変換素子と第2色光の受光量に応じた信号電荷を蓄積する複数の光電変換素子と第3色光の受光量に応じた信号電荷を蓄積する複数の光電変換素子とが二次元アレイ状に配列形成された半導体基板と、該半導体基板に形成され前記光電変換素子から読み出された前記信号電荷を出力端側に転送する電荷転送路と、該電荷転送路に沿って転送されてきた前記信号電荷を受け取り2つの分岐先のいずれか一方に交互に振り分ける分岐部とを備える出力2分岐型固体撮像素子であって、前記電荷転送路の端部のチャネル幅を片側から狭く絞り前記分岐部に接続する構成としたことを特徴とする出力2分岐型固体撮像素子。
- 前記第1色光が3原色のうちの赤色であり、前記第2色光が3原色のうちの緑色であり、前記第3色光が3原色のうちの青色であり、前記赤色と前記青色の各信号電荷を前記絞った側の分岐先に分岐する構成としたことを特徴とする請求項1に記載の出力2分岐型固体撮像素子。
- 前記分岐部の2つの分岐先の夫々に分岐転送路を設けたことを特徴とする請求項1又は請求項2に記載の出力2分岐型固体撮像素子。
- 前記分岐部に設ける分岐電極に固定電位を印加し該分岐部に流れ込んだ信号電荷がそのまま分岐先に流れ出る構成としたことを特徴とする請求項1乃至請求項3のいずれかに記載の出力2分岐型固体撮像素子。
- 前記分岐電極が扁平二等辺三角形状をなし底辺側が前記電荷転送路に連設され、二等辺の1辺が第1の分岐先に連設され、二等辺の他辺が第2の分岐先に連設されることを特徴とする請求項4に記載の出力2分岐型固体撮像素子。
- 前記光電変換素子が前記半導体基板にハニカム配列されていることを特徴とする請求項1乃至請求項5のいずれかに記載の出力2分岐型固体撮像素子。
- 信号電荷を前記半導体基板の表面に沿う1方向に転送する複数の垂直転送路と、該垂直転送路によって転送されてきた信号電荷を受け取り前記1方向に対して直角な方向に転送する水平転送路と、前記垂直転送路によって転送されてきた信号電荷を受け取り所要タイミングで前記水平転送路に出力するラインメモリとを備え、前記分岐部が前記水平転送路の端部に接続されることを特徴とする請求項1乃至請求項6のいずれかに記載の出力2分岐型固体撮像素子。
- 請求項1乃至請求項7のいずれかに記載の出力2分岐型固体撮像素子と、該出力2分岐型固体撮像素子から出力される前記第1色光,第2色光,第3色光毎の画像信号を積算しホワイトバランス補正を施す信号処理手段とを備えることを特徴とする撮像装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2006047078A JP4637033B2 (ja) | 2006-02-23 | 2006-02-23 | 出力2分岐型固体撮像素子及び撮像装置 |
US11/709,763 US7760261B2 (en) | 2006-02-23 | 2007-02-23 | Two-branch outputting solid-state imaging device and imaging apparatus |
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JP2006047078A JP4637033B2 (ja) | 2006-02-23 | 2006-02-23 | 出力2分岐型固体撮像素子及び撮像装置 |
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JP2007228260A JP2007228260A (ja) | 2007-09-06 |
JP4637033B2 true JP4637033B2 (ja) | 2011-02-23 |
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JP (1) | JP4637033B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4773305B2 (ja) * | 2006-09-04 | 2011-09-14 | 富士フイルム株式会社 | 撮像装置および撮像方法 |
JP2008244738A (ja) * | 2007-03-27 | 2008-10-09 | Fujifilm Corp | 撮像装置および撮像素子の駆動制御方法 |
JP5466975B2 (ja) * | 2010-03-15 | 2014-04-09 | パナソニック株式会社 | 固体撮像装置、固体撮像装置の駆動方法及びカメラ |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04243138A (ja) * | 1991-01-18 | 1992-08-31 | Nec Corp | Ccdリニアイメージセンサ |
JPH05145858A (ja) * | 1991-11-21 | 1993-06-11 | Hitachi Ltd | 固体撮像装置 |
JPH07183491A (ja) * | 1993-12-24 | 1995-07-21 | Sony Corp | 電荷転送装置及びこれを用いた固体撮像装置 |
JP2007228265A (ja) * | 2006-02-23 | 2007-09-06 | Fujifilm Corp | 出力2分岐型固体撮像素子及びその駆動方法並びに撮像装置 |
JP2008017532A (ja) * | 2007-09-21 | 2008-01-24 | Fujifilm Corp | 出力2分岐型固体撮像素子 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58202685A (ja) * | 1982-05-21 | 1983-11-25 | Sony Corp | 信号合成用電荷転送装置 |
JP2871185B2 (ja) * | 1991-06-17 | 1999-03-17 | ミノルタ株式会社 | 電荷結合装置 |
JPH05308575A (ja) | 1992-05-01 | 1993-11-19 | Sony Corp | 固体撮像素子 |
JP2624138B2 (ja) | 1993-08-05 | 1997-06-25 | 日本電気株式会社 | 固体撮像素子 |
US7139023B2 (en) * | 2001-03-12 | 2006-11-21 | Texas Instruments Incorporated | High dynamic range charge readout system |
JP4125927B2 (ja) * | 2002-08-16 | 2008-07-30 | 富士フイルム株式会社 | 固体撮像装置および固体撮像素子 |
JP2007173774A (ja) * | 2005-11-22 | 2007-07-05 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
JP4796859B2 (ja) * | 2006-02-16 | 2011-10-19 | 富士フイルム株式会社 | 出力2分岐型固体撮像素子及び撮像装置 |
US7855742B2 (en) * | 2006-03-30 | 2010-12-21 | Fujifilm Corporation | Solid state imaging device with horizontal transfer paths and a driving method therefor |
-
2006
- 2006-02-23 JP JP2006047078A patent/JP4637033B2/ja not_active Expired - Fee Related
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2007
- 2007-02-23 US US11/709,763 patent/US7760261B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04243138A (ja) * | 1991-01-18 | 1992-08-31 | Nec Corp | Ccdリニアイメージセンサ |
JPH05145858A (ja) * | 1991-11-21 | 1993-06-11 | Hitachi Ltd | 固体撮像装置 |
JPH07183491A (ja) * | 1993-12-24 | 1995-07-21 | Sony Corp | 電荷転送装置及びこれを用いた固体撮像装置 |
JP2007228265A (ja) * | 2006-02-23 | 2007-09-06 | Fujifilm Corp | 出力2分岐型固体撮像素子及びその駆動方法並びに撮像装置 |
JP2008017532A (ja) * | 2007-09-21 | 2008-01-24 | Fujifilm Corp | 出力2分岐型固体撮像素子 |
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US20070216970A1 (en) | 2007-09-20 |
JP2007228260A (ja) | 2007-09-06 |
US7760261B2 (en) | 2010-07-20 |
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