JP4627971B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4627971B2
JP4627971B2 JP2003139390A JP2003139390A JP4627971B2 JP 4627971 B2 JP4627971 B2 JP 4627971B2 JP 2003139390 A JP2003139390 A JP 2003139390A JP 2003139390 A JP2003139390 A JP 2003139390A JP 4627971 B2 JP4627971 B2 JP 4627971B2
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Japan
Prior art keywords
film
forming
silicon nitride
wiring
nitride film
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Expired - Fee Related
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JP2003139390A
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English (en)
Japanese (ja)
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JP2004056099A (ja
JP2004056099A5 (enrdf_load_stackoverflow
Inventor
徹 高山
舜平 山崎
健吾 秋元
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2003139390A priority Critical patent/JP4627971B2/ja
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Publication of JP2004056099A5 publication Critical patent/JP2004056099A5/ja
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  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
JP2003139390A 2002-05-17 2003-05-16 半導体装置の作製方法 Expired - Fee Related JP4627971B2 (ja)

Priority Applications (1)

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JP2003139390A JP4627971B2 (ja) 2002-05-17 2003-05-16 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002143899 2002-05-17
JP2002160848 2002-05-31
JP2003139390A JP4627971B2 (ja) 2002-05-17 2003-05-16 半導体装置の作製方法

Related Child Applications (1)

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JP2010046384A Division JP2010123998A (ja) 2002-05-17 2010-03-03 半導体装置

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JP2004056099A JP2004056099A (ja) 2004-02-19
JP2004056099A5 JP2004056099A5 (enrdf_load_stackoverflow) 2006-06-29
JP4627971B2 true JP4627971B2 (ja) 2011-02-09

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JP2003139390A Expired - Fee Related JP4627971B2 (ja) 2002-05-17 2003-05-16 半導体装置の作製方法

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JP (1) JP4627971B2 (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2135696C1 (ru) * 1998-01-22 1999-08-27 Читинский государственный технический университет Способ защиты инженерных сооружений от деформаций, вызванных криосолифлюкционным смещением пород
RU2245428C2 (ru) * 2002-08-15 2005-01-27 Государственное федеральное унитарное предприятие Научно-исследовательский, проектно-изыскательский и конструкторско-технологический институт оснований и подземных сооружений им. Н.М. Герсеванова (ГУП НИИОСП) Способ возведения подземных сооружений в зоне городской застройки
RU2245966C2 (ru) * 2002-08-07 2005-02-10 Государственное федеральное унитарное предприятие Научно-исследовательский, проектно-изыскательский и конструкторско-технологический институт оснований и подземных сооружений им. Н.М. Герсеванова (ГУП НИИОСП) Способ возведения подземных сооружений в зоне городской застройки

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005285830A (ja) * 2004-03-26 2005-10-13 Dainippon Printing Co Ltd ゲート絶縁膜の形成方法及び薄膜トランジスタの製造方法並びに薄膜トランジスタ
US7968889B2 (en) * 2005-11-02 2011-06-28 Sharp Kabushiki Kaisha Semiconductor device with thinned gate insulating film and polycrystal semiconductor layer and production method thereof
JP2008210893A (ja) 2007-02-23 2008-09-11 Fujitsu Ltd 半導体装置とその製造方法
JP2010103303A (ja) * 2008-10-23 2010-05-06 Toshiba Corp 磁気抵抗素子及びその製造方法
US8728941B2 (en) 2010-03-16 2014-05-20 Sharp Kabushiki Kaisha Semiconductor apparatus and manufacturing method of same
JP2014082388A (ja) * 2012-10-17 2014-05-08 Semiconductor Energy Lab Co Ltd 半導体装置
US9799772B2 (en) 2013-05-29 2017-10-24 Joled Inc. Thin film transistor device, method for manufacturing same and display device
JP6318433B2 (ja) * 2013-11-28 2018-05-09 大陽日酸株式会社 シリコン窒化膜の形成方法及びシリコン窒化膜
CN108172626B (zh) * 2016-12-07 2020-07-10 清华大学 一种薄膜晶体管及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0316129A (ja) * 1989-03-22 1991-01-24 Fuji Electric Co Ltd 窒化シリコン膜の生成方法
JP3179779B2 (ja) * 1990-07-24 2001-06-25 株式会社半導体エネルギー研究所 窒化物絶縁膜の作製方法
JP3309509B2 (ja) * 1993-08-12 2002-07-29 セイコーエプソン株式会社 薄膜トランジスタを用いたアクティブマトリックス表示装置およびその製造方法
JPH08195494A (ja) * 1994-05-26 1996-07-30 Sanyo Electric Co Ltd 半導体装置，半導体装置の製造方法，薄膜トランジスタ，薄膜トランジスタの製造方法，表示装置
JPH09232250A (ja) * 1996-02-20 1997-09-05 Semiconductor Energy Lab Co Ltd 被膜作製方法
JPH09312406A (ja) * 1996-03-17 1997-12-02 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH11251599A (ja) * 1998-03-06 1999-09-17 Toshiba Corp 薄膜半導体装置の製造方法
JP2002050634A (ja) * 2000-04-28 2002-02-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2135696C1 (ru) * 1998-01-22 1999-08-27 Читинский государственный технический университет Способ защиты инженерных сооружений от деформаций, вызванных криосолифлюкционным смещением пород
RU2245966C2 (ru) * 2002-08-07 2005-02-10 Государственное федеральное унитарное предприятие Научно-исследовательский, проектно-изыскательский и конструкторско-технологический институт оснований и подземных сооружений им. Н.М. Герсеванова (ГУП НИИОСП) Способ возведения подземных сооружений в зоне городской застройки
RU2245428C2 (ru) * 2002-08-15 2005-01-27 Государственное федеральное унитарное предприятие Научно-исследовательский, проектно-изыскательский и конструкторско-технологический институт оснований и подземных сооружений им. Н.М. Герсеванова (ГУП НИИОСП) Способ возведения подземных сооружений в зоне городской застройки

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JP2004056099A (ja) 2004-02-19

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