JP4611137B2 - 保護膜形成用材料、およびこれを用いたホトレジストパターン形成方法 - Google Patents

保護膜形成用材料、およびこれを用いたホトレジストパターン形成方法 Download PDF

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Publication number
JP4611137B2
JP4611137B2 JP2005203150A JP2005203150A JP4611137B2 JP 4611137 B2 JP4611137 B2 JP 4611137B2 JP 2005203150 A JP2005203150 A JP 2005203150A JP 2005203150 A JP2005203150 A JP 2005203150A JP 4611137 B2 JP4611137 B2 JP 4611137B2
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JP
Japan
Prior art keywords
protective film
forming
film
immersion exposure
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005203150A
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English (en)
Japanese (ja)
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JP2007024959A (ja
Inventor
啓太 石塚
浩太郎 遠藤
正昭 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP2005203150A priority Critical patent/JP4611137B2/ja
Priority to US11/995,291 priority patent/US20100124720A1/en
Priority to PCT/JP2006/313425 priority patent/WO2007007619A1/ja
Priority to TW095124959A priority patent/TW200710573A/zh
Publication of JP2007024959A publication Critical patent/JP2007024959A/ja
Application granted granted Critical
Publication of JP4611137B2 publication Critical patent/JP4611137B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2005203150A 2005-07-12 2005-07-12 保護膜形成用材料、およびこれを用いたホトレジストパターン形成方法 Expired - Fee Related JP4611137B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005203150A JP4611137B2 (ja) 2005-07-12 2005-07-12 保護膜形成用材料、およびこれを用いたホトレジストパターン形成方法
US11/995,291 US20100124720A1 (en) 2005-07-12 2006-07-05 Material for protective film formation, and method for photoresist pattern formation using the same
PCT/JP2006/313425 WO2007007619A1 (ja) 2005-07-12 2006-07-05 保護膜形成用材料、およびこれを用いたホトレジストパターン形成方法
TW095124959A TW200710573A (en) 2005-07-12 2006-07-07 Material for protective film formation, and method for photoresist pattern formation using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005203150A JP4611137B2 (ja) 2005-07-12 2005-07-12 保護膜形成用材料、およびこれを用いたホトレジストパターン形成方法

Publications (2)

Publication Number Publication Date
JP2007024959A JP2007024959A (ja) 2007-02-01
JP4611137B2 true JP4611137B2 (ja) 2011-01-12

Family

ID=37637013

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005203150A Expired - Fee Related JP4611137B2 (ja) 2005-07-12 2005-07-12 保護膜形成用材料、およびこれを用いたホトレジストパターン形成方法

Country Status (4)

Country Link
US (1) US20100124720A1 (enExample)
JP (1) JP4611137B2 (enExample)
TW (1) TW200710573A (enExample)
WO (1) WO2007007619A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8323872B2 (en) 2005-06-15 2012-12-04 Shin-Etsu Chemical Co., Ltd. Resist protective coating material and patterning process
JP4662062B2 (ja) * 2005-06-15 2011-03-30 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP5229228B2 (ja) 2007-09-26 2013-07-03 Ｊｓｒ株式会社 液浸用上層膜形成用組成物及び液浸用上層膜並びにフォトレジストパターン形成方法
JP5311331B2 (ja) * 2008-06-25 2013-10-09 ルネサスエレクトロニクス株式会社 液浸リソグラフィの現像処理方法および該現像処理方法を用いた電子デバイス
JP5516931B2 (ja) * 2009-03-12 2014-06-11 ルネサスエレクトロニクス株式会社 レジストパターン形成方法
CN116263564A (zh) * 2021-12-13 2023-06-16 长鑫存储技术有限公司 光刻胶图案的形成方法和光刻胶结构

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002196495A (ja) * 2000-12-22 2002-07-12 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
JP4083399B2 (ja) * 2001-07-24 2008-04-30 セントラル硝子株式会社 含フッ素重合性単量体およびそれを用いた高分子化合物
US6806026B2 (en) * 2002-05-31 2004-10-19 International Business Machines Corporation Photoresist composition
JP4265766B2 (ja) * 2003-08-25 2009-05-20 東京応化工業株式会社 液浸露光プロセス用レジスト保護膜形成用材料、該保護膜形成材料からなるレジスト保護膜、および該レジスト保護膜を用いたレジストパターン形成方法
JP4609878B2 (ja) * 2003-10-28 2011-01-12 東京応化工業株式会社 レジスト上層膜形成材料、およびこれを用いたレジストパターン形成方法
JP2005220274A (ja) * 2004-02-09 2005-08-18 Shin Etsu Chem Co Ltd 高分子化合物、レジスト材料及びパターン形成方法
JP4507891B2 (ja) * 2004-02-20 2010-07-21 ダイキン工業株式会社 液浸リソグラフィーに用いるレジスト積層体
US20050202351A1 (en) * 2004-03-09 2005-09-15 Houlihan Francis M. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
JP4355944B2 (ja) * 2004-04-16 2009-11-04 信越化学工業株式会社 パターン形成方法及びこれに用いるレジスト上層膜材料
JP4621451B2 (ja) * 2004-08-11 2011-01-26 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法

Also Published As

Publication number Publication date
TWI325518B (enExample) 2010-06-01
WO2007007619A1 (ja) 2007-01-18
TW200710573A (en) 2007-03-16
US20100124720A1 (en) 2010-05-20
JP2007024959A (ja) 2007-02-01

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