JP4602023B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP4602023B2
JP4602023B2 JP2004215754A JP2004215754A JP4602023B2 JP 4602023 B2 JP4602023 B2 JP 4602023B2 JP 2004215754 A JP2004215754 A JP 2004215754A JP 2004215754 A JP2004215754 A JP 2004215754A JP 4602023 B2 JP4602023 B2 JP 4602023B2
Authority
JP
Japan
Prior art keywords
semiconductor film
crystalline semiconductor
ridges
laser
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004215754A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005064488A (ja
JP2005064488A5 (enExample
Inventor
明久 下村
将樹 古山
博信 小路
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2004215754A priority Critical patent/JP4602023B2/ja
Publication of JP2005064488A publication Critical patent/JP2005064488A/ja
Publication of JP2005064488A5 publication Critical patent/JP2005064488A5/ja
Application granted granted Critical
Publication of JP4602023B2 publication Critical patent/JP4602023B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2004215754A 2003-07-31 2004-07-23 半導体装置の作製方法 Expired - Fee Related JP4602023B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004215754A JP4602023B2 (ja) 2003-07-31 2004-07-23 半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003284462 2003-07-31
JP2004215754A JP4602023B2 (ja) 2003-07-31 2004-07-23 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005064488A JP2005064488A (ja) 2005-03-10
JP2005064488A5 JP2005064488A5 (enExample) 2007-07-12
JP4602023B2 true JP4602023B2 (ja) 2010-12-22

Family

ID=34380271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004215754A Expired - Fee Related JP4602023B2 (ja) 2003-07-31 2004-07-23 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4602023B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5063867B2 (ja) * 2005-04-21 2012-10-31 株式会社Ｓｕｍｃｏ Ｓｏｉ基板の製造方法
JP2007048772A (ja) * 2005-08-05 2007-02-22 Rohm Co Ltd 有機エレクトロルミネセンス素子
JP5090690B2 (ja) * 2006-08-28 2012-12-05 三菱電機株式会社 半導体薄膜の製造方法、薄膜トランジスタの製造方法、及び半導体薄膜の製造装置
JP5041255B2 (ja) * 2007-04-18 2012-10-03 三菱電機株式会社 半導体薄膜の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3471966B2 (ja) * 1995-03-16 2003-12-02 株式会社半導体エネルギー研究所 薄膜半導体装置の作製方法
JPH09213630A (ja) * 1996-02-05 1997-08-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP3476320B2 (ja) * 1996-02-23 2003-12-10 株式会社半導体エネルギー研究所 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法
JP3389022B2 (ja) * 1996-09-27 2003-03-24 シャープ株式会社 半導体装置
JP5222450B2 (ja) * 2000-09-01 2013-06-26 株式会社半導体エネルギー研究所 レーザー照射装置及び半導体装置の作製方法
JP2002270510A (ja) * 2000-12-26 2002-09-20 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP4827305B2 (ja) * 2001-03-16 2011-11-30 株式会社半導体エネルギー研究所 半導体装置の作製方法

Also Published As

Publication number Publication date
JP2005064488A (ja) 2005-03-10

Similar Documents

Publication Publication Date Title
US7247527B2 (en) Method for manufacturing semiconductor device, and laser irradiation apparatus
JP5298098B2 (ja) 半導体装置の作製方法
US7358165B2 (en) Semiconductor device and method for manufacturing semiconductor device
JP4619348B2 (ja) レーザー装置
JP5427753B2 (ja) 半導体装置の作製方法
JP3980465B2 (ja) 半導体装置の作製方法
TW473800B (en) Method of manufacturing a semiconductor device
JP4439789B2 (ja) レーザ照射装置、並びに半導体装置の作製方法
US20070032049A1 (en) Process for manufacturing a semiconductor device
JP4137460B2 (ja) 半導体装置の作製方法
JP2003051446A (ja) 半導体装置の作製方法
JP2008182250A (ja) 半導体装置の作製方法
KR101065660B1 (ko) 레이저 조사방법, 레이저 조사장치 및 반도체장치의제조방법
JP4578877B2 (ja) 半導体装置及びその作製方法
JP2004296729A (ja) 半導体装置の作製方法
JP4602023B2 (ja) 半導体装置の作製方法
JP4841740B2 (ja) 半導体装置の作製方法
JP4860055B2 (ja) 半導体装置の作製方法
JP4624023B2 (ja) 半導体装置、及びその作製方法
JP4741204B2 (ja) 半導体装置の作製方法
JP2004214240A (ja) レーザ照射装置およびレーザ処理方法、並びに半導体装置の作製方法
JP4939699B2 (ja) 半導体装置の作製方法
JP4357811B2 (ja) 半導体装置の作製方法
JP2005039250A (ja) レーザ照射装置、レーザ照射方法、及び半導体装置の作製方法
JP2007103957A (ja) レーザー照射装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070524

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070524

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100604

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100629

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100727

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100824

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100906

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100928

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100929

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131008

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131008

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees