JP4599930B2 - 太陽電池モジュールおよび太陽電池素子 - Google Patents
太陽電池モジュールおよび太陽電池素子 Download PDFInfo
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- JP4599930B2 JP4599930B2 JP2004228060A JP2004228060A JP4599930B2 JP 4599930 B2 JP4599930 B2 JP 4599930B2 JP 2004228060 A JP2004228060 A JP 2004228060A JP 2004228060 A JP2004228060 A JP 2004228060A JP 4599930 B2 JP4599930 B2 JP 4599930B2
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- solar cell
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- vop
- iop
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Description
0.4Iop≦Ir≦0.8Iop(Vr=5Vop印加時)
又は、
4.5Vop≦Vr≦15Vop(Ir=0.8Iop印加時)、
3.5Vop≦Vr≦5Vop(Ir=0.4Iop印加時)
のいずれかの関係を満たすことを特徴とする。
0.7Iop≦Ir≦0.9Iop(Vr=10Vop印加時),
0.4Iop≦Ir≦0.8Iop(Vr=5Vop印加時)
又は、
4.5Vop≦Vr≦15Vop(Ir=0.8Iop印加時),
3.5Vop≦Vr≦5Vop(Ir=0.4Iop印加時)
のいずれかの関係を満たすことを特徴とする。
0.4Iop≦Ir≦0.8Iop(Vr=5Vop印加時)........(1)
3.5Vop≦Vr≦5Vop(Ir=0.4Iop印加時) .......(2)
Claims (5)
- 絶縁性基板上に形成され、所定数のユニットセルが直列接続された構造を有する太陽電池素子から構成される太陽電池モジュールにおいて、該直列接続された各ユニットセル内に電気的等価回路上のシャント抵抗が複数並列接続された構造を形成し、該絶縁性基板上に形成された光電変換層はアモルファスシリコン/アモルファスシリコンゲルマニウムのタンデム構造を構成し、最適動作電圧をVop、最適動作電流をIop、逆方向電圧をVr、逆方向漏れ電流をIrとした場合、該太陽電池モジュールの逆方向の電圧−電流特性が、
0.7Iop≦Ir≦0.9Iop(Vr=10Vop印加時),
0.4Iop≦Ir≦0.8Iop(Vr=5Vop印加時)
又は、
4.5Vop≦Vr≦15Vop(Ir=0.8Iop印加時),
3.5Vop≦Vr≦5Vop(Ir=0.4Iop印加時)
のいずれかの関係を満たすことを特徴とする太陽電池モジュール。 - 請求項1記載の太陽電池モジュールにおいて、
前記絶縁性基板の一面上には第1電極層、光電変換層及び第3電極層が当該順に積層され、該絶縁性基板の反対面上には第2電極層及び第4電極層が当該順に積層されており、
前記絶縁性基板を貫通する第1孔により第1電極層と第2電極層とが電気的に接続され、該絶縁性基板を貫通する第2孔により第3電極層と第4電極層とが電気的に接続されたことを特徴とする太陽電池モジュール。 - 太陽電池モジュールを構成する太陽電池素子であって、該太陽電池素子は絶縁性基板上に形成され、所定数のユニットセルが直列接続された構造を有し、該直列接続された各ユニットセル内に電気的等価回路上のシャント抵抗が複数並列接続された構造を形成し、該絶縁性基板上に形成された光電変換層はアモルファスシリコン/アモルファスシリコンゲルマニウムのタンデム構造を構成し、最適動作電圧をVop、最適動作電流をIop、逆方向電圧をVr、逆方向漏れ電流をIrとした場合、該太陽電池モジュールの逆方向の電圧−電流特性が、
0.7Iop≦Ir≦0.9Iop(Vr=10Vop印加時),
0.4Iop≦Ir≦0.8Iop(Vr=5Vop印加時)
又は、
4.5Vop≦Vr≦15Vop(Ir=0.8Iop印加時),
3.5Vop≦Vr≦5Vop(Ir=0.4Iop印加時)
のいずれかの関係を満たすことを特徴とする太陽電池素子。 - 請求項3記載の太陽電池素子において、
前記絶縁性基板の一面上には第1電極層、光電変換層及び第3電極層が当該順に積層され、該絶縁性基板の反対面上には第2電極層及び第4電極層が当該順に積層されており、
前記絶縁性基板を貫通する第1孔により第1電極層と第2電極層とが電気的に接続され、該絶縁性基板を貫通する第2孔により第3電極層と第4電極層とが電気的に接続されたことを特徴とする太陽電池素子。 - 請求項3又は4記載の太陽電池素子において、前記基板は可撓性絶縁性基板であることを特徴とする太陽電池素子。
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JP2006049552A JP2006049552A (ja) | 2006-02-16 |
JP4599930B2 true JP4599930B2 (ja) | 2010-12-15 |
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Families Citing this family (1)
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US20110005572A1 (en) * | 2008-02-18 | 2011-01-13 | Akira Shimizu | Thin-film solar cell module |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000124491A (ja) * | 1998-10-14 | 2000-04-28 | Fuji Electric Corp Res & Dev Ltd | 太陽電池モジュールおよびその製造方法 |
JP2001068713A (ja) * | 1999-08-25 | 2001-03-16 | Kanegafuchi Chem Ind Co Ltd | 薄膜光電変換モジュール |
JP2002252360A (ja) * | 2001-02-26 | 2002-09-06 | Fuji Electric Corp Res & Dev Ltd | 薄膜太陽電池の製造方法 |
JP2003332597A (ja) * | 2002-05-09 | 2003-11-21 | Fuji Electric Co Ltd | 薄膜太陽電池モジュールの製造方法 |
JP2004056024A (ja) * | 2002-07-24 | 2004-02-19 | Fuji Electric Holdings Co Ltd | 薄膜太陽電池およびその製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0243776A (ja) * | 1988-08-03 | 1990-02-14 | Fuji Electric Corp Res & Dev Ltd | 薄膜太陽電池の製造方法 |
JPH07105519B2 (ja) * | 1989-10-03 | 1995-11-13 | シャープ株式会社 | 太陽電池セル |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000124491A (ja) * | 1998-10-14 | 2000-04-28 | Fuji Electric Corp Res & Dev Ltd | 太陽電池モジュールおよびその製造方法 |
JP2001068713A (ja) * | 1999-08-25 | 2001-03-16 | Kanegafuchi Chem Ind Co Ltd | 薄膜光電変換モジュール |
JP2002252360A (ja) * | 2001-02-26 | 2002-09-06 | Fuji Electric Corp Res & Dev Ltd | 薄膜太陽電池の製造方法 |
JP2003332597A (ja) * | 2002-05-09 | 2003-11-21 | Fuji Electric Co Ltd | 薄膜太陽電池モジュールの製造方法 |
JP2004056024A (ja) * | 2002-07-24 | 2004-02-19 | Fuji Electric Holdings Co Ltd | 薄膜太陽電池およびその製造方法 |
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