JP4599212B2 - プラズマ処理方法 - Google Patents

プラズマ処理方法 Download PDF

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Publication number
JP4599212B2
JP4599212B2 JP2005117846A JP2005117846A JP4599212B2 JP 4599212 B2 JP4599212 B2 JP 4599212B2 JP 2005117846 A JP2005117846 A JP 2005117846A JP 2005117846 A JP2005117846 A JP 2005117846A JP 4599212 B2 JP4599212 B2 JP 4599212B2
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Japan
Prior art keywords
film
etching
shape
processed
antireflection film
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JP2005117846A
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Japanese (ja)
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JP2006302924A (ja
JP2006302924A5 (enExample
Inventor
誠浩 角屋
豊 大本
守 薬師寺
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2005117846A 2005-04-15 2005-04-15 プラズマ処理方法 Expired - Fee Related JP4599212B2 (ja)

Priority Applications (1)

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JP2005117846A JP4599212B2 (ja) 2005-04-15 2005-04-15 プラズマ処理方法

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JP2005117846A JP4599212B2 (ja) 2005-04-15 2005-04-15 プラズマ処理方法

Related Child Applications (1)

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JP2010012796A Division JP2010153880A (ja) 2010-01-25 2010-01-25 プラズマ処理装置

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JP2006302924A JP2006302924A (ja) 2006-11-02
JP2006302924A5 JP2006302924A5 (enExample) 2008-04-10
JP4599212B2 true JP4599212B2 (ja) 2010-12-15

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JP2005117846A Expired - Fee Related JP4599212B2 (ja) 2005-04-15 2005-04-15 プラズマ処理方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104471686A (zh) * 2012-08-09 2015-03-25 东京毅力科创株式会社 等离子体蚀刻方法和等离子体蚀刻装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5103006B2 (ja) * 2006-11-16 2012-12-19 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4919871B2 (ja) * 2007-02-09 2012-04-18 東京エレクトロン株式会社 エッチング方法、半導体装置の製造方法および記憶媒体
KR101179111B1 (ko) * 2007-02-09 2012-09-07 도쿄엘렉트론가부시키가이샤 에칭 방법 및 기억 매체
JP5063154B2 (ja) * 2007-03-20 2012-10-31 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
JP5144213B2 (ja) * 2007-10-30 2013-02-13 シャープ株式会社 プラズマエッチング方法、プラズマエッチング装置、および固体撮像素子の製造方法
JP5260356B2 (ja) 2009-03-05 2013-08-14 東京エレクトロン株式会社 基板処理方法
WO2020121540A1 (ja) * 2019-02-04 2020-06-18 株式会社日立ハイテク プラズマ処理方法及びプラズマ処理装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3400770B2 (ja) * 1999-11-16 2003-04-28 松下電器産業株式会社 エッチング方法、半導体装置及びその製造方法
JP2002261082A (ja) * 2001-03-01 2002-09-13 Nec Corp 半導体装置の製造方法
JP4550507B2 (ja) * 2004-07-26 2010-09-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP4537818B2 (ja) * 2004-09-30 2010-09-08 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP2006295088A (ja) * 2005-04-15 2006-10-26 Hitachi High-Technologies Corp プラズマ処理方法及びプラズマ処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104471686A (zh) * 2012-08-09 2015-03-25 东京毅力科创株式会社 等离子体蚀刻方法和等离子体蚀刻装置
CN104471686B (zh) * 2012-08-09 2017-03-22 东京毅力科创株式会社 等离子体蚀刻方法和等离子体蚀刻装置

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JP2006302924A (ja) 2006-11-02

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