JP5103006B2 - 半導体装置の製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 49
- 239000004065 semiconductor Substances 0.000 title claims description 43
- 238000005530 etching Methods 0.000 claims description 169
- 238000000034 method Methods 0.000 claims description 33
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 230000009977 dual effect Effects 0.000 claims description 5
- 238000000151 deposition Methods 0.000 description 17
- 230000008021 deposition Effects 0.000 description 17
- 230000000694 effects Effects 0.000 description 13
- 239000010410 layer Substances 0.000 description 10
- 238000005259 measurement Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 5
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229920000265 Polyparaphenylene Polymers 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920000090 poly(aryl ether) Polymers 0.000 description 2
- -1 polyphenylene Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- DYZHZLQEGSYGDH-UHFFFAOYSA-N 7-bicyclo[4.2.0]octa-1,3,5-trienyl-[[7,8-bis(ethenyl)-7-bicyclo[4.2.0]octa-1,3,5-trienyl]oxy]silane Chemical compound C1C2=CC=CC=C2C1[SiH2]OC1(C=C)C2=CC=CC=C2C1C=C DYZHZLQEGSYGDH-UHFFFAOYSA-N 0.000 description 1
- 244000132059 Carica parviflora Species 0.000 description 1
- 235000014653 Carica parviflora Nutrition 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000005441 aurora Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
20 キャップ膜
22 残部
30 レジスト
Claims (15)
- 第1の絶縁膜と前記第1の絶縁膜上に設けられた第2の絶縁膜とを備える半導体装置を製造する方法であって、
第1のエッチング条件で、前記第2の絶縁膜を途中までエッチングする第1のエッチング工程と、
前記第1のエッチング条件とは異なる第2のエッチング条件で、前記第1のエッチング工程において残された前記第2の絶縁膜の残部と、前記第1の絶縁膜とをエッチングする第2のエッチング工程と、
を含み、
前記第2のエッチング条件においては、前記第1のエッチング条件よりも酸素流量が多い半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法において、
前記第2のエッチング条件における酸素混合比は、0.4%以上2.6%以下である半導体装置の製造方法。 - 第1の絶縁膜と前記第1の絶縁膜上に設けられた第2の絶縁膜とを備える半導体装置を製造する方法であって、
第1のエッチング条件で、前記第2の絶縁膜を途中までエッチングする第1のエッチング工程と、
前記第1のエッチング条件とは異なる第2のエッチング条件で、前記第1のエッチング工程において残された前記第2の絶縁膜の残部と、前記第1の絶縁膜とをエッチングする第2のエッチング工程と、
を含み、
前記第1および第2のエッチング工程は、上部電極および下部電極を有するエッチング装置を用いて実行され、
前記第2のエッチング条件においては、前記第1のエッチング条件よりも、前記上部電極の高周波出力が高い半導体装置の製造方法。 - 請求項3に記載の半導体装置の製造方法において、
前記第2のエッチング条件における前記上部電極の前記高周波出力は、1300W以上2200W以下である半導体装置の製造方法。 - 請求項1乃至4いずれかに記載の半導体装置の製造方法において、
前記第1の絶縁膜は、低誘電率膜である半導体装置の製造方法。 - 第1の絶縁膜と前記第1の絶縁膜上に設けられた第2の絶縁膜とを備える半導体装置を製造する方法であって、
第1のエッチング条件で、前記第2の絶縁膜を途中までエッチングする第1のエッチング工程と、
前記第1のエッチング条件とは異なる第2のエッチング条件で、前記第1のエッチング工程において残された前記第2の絶縁膜の残部と、前記第1の絶縁膜とをエッチングする第2のエッチング工程と、
を含み、
前記第1の絶縁膜は、低誘電率膜であり、
前記第1および第2の絶縁膜間には、エッチングストップ膜が介在していない半導体装置の製造方法。 - 請求項5または6に記載の半導体装置の製造方法において、
前記第1の絶縁膜は、SiOCからなる半導体装置の製造方法。 - 請求項1乃至7いずれかに記載の半導体装置の製造方法において、
前記第2のエッチング条件は、前記第1および第2の絶縁膜間の選択比が取れない条件である半導体装置の製造方法。 - 請求項1乃至8いずれかに記載の半導体装置の製造方法において、
前記第1のエッチング工程におけるエッチング時間は、前記第2の絶縁膜を最後までエッチングするのに必要なエッチング時間の60%以上90%以下である半導体装置の製造方法。 - 請求項1乃至9いずれかに記載の半導体装置の製造方法において、
前記第2の絶縁膜の前記残部の厚みは、当該第2の絶縁膜全体の厚みの10%以上40%以下である半導体装置の製造方法。 - 請求項1乃至10いずれかに記載の半導体装置の製造方法において、
前記第2の絶縁膜は、前記第1の絶縁膜よりも大きな誘電率を有する半導体装置の製造方法。 - 請求項1乃至11いずれかに記載の半導体装置の製造方法において、
前記第2の絶縁膜は、SiO2、SiC、SiCN、SiNまたはBCBからなる半導体装置の製造方法。 - 請求項1乃至12いずれかに記載の半導体装置の製造方法において、
前記第1および第2のエッチング工程は、デュアルダマシン工程の一部として実行される半導体装置の製造方法。 - 第1の絶縁膜と前記第1の絶縁膜上に設けられた第2の絶縁膜とを備える半導体装置を製造する方法であって、
第1のエッチング条件で、前記第2の絶縁膜を途中までエッチングする第1のエッチング工程と、
前記第1のエッチング条件とは異なる第2のエッチング条件で、前記第1のエッチング工程において残された前記第2の絶縁膜の残部と、前記第1の絶縁膜とをエッチングする第2のエッチング工程と、
を含み、
前記第1および第2のエッチング工程は、上部電極および下部電極を有するエッチング装置を用いて実行され、
前記第1のエッチング条件においては、CH4−nFn(nは4以下の自然数)を主成分としたガスを使用し、圧力が30mTorr以上60mTorr以下、前記上部電極の高周波出力が200W以上600W以下、バイアス出力が700W以上1300W以下、Ar流量が0.9l/min以上1.8l/min以下である半導体装置の製造方法。 - 第1の絶縁膜と前記第1の絶縁膜上に設けられた第2の絶縁膜とを備える半導体装置を製造する方法であって、
第1のエッチング条件で、前記第2の絶縁膜を途中までエッチングする第1のエッチング工程と、
前記第1のエッチング条件とは異なる第2のエッチング条件で、前記第1のエッチング工程において残された前記第2の絶縁膜の残部と、前記第1の絶縁膜とをエッチングする第2のエッチング工程と、
を含み、
前記第1および第2のエッチング工程は、上部電極および下部電極を有するエッチング装置を用いて実行され、
前記第2のエッチング条件においては、CH4−nFn(nは4以下の自然数)を主成分としたガスを使用し、圧力が30mTorr以上60mTorr以下、前記上部電極の高周波出力が1300W以上2200W以下、バイアス出力が600W以上1200W以下、Ar流量が0.2l/min以上0.6l/min以下である半導体装置の製造方法。
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JP2006310464A JP5103006B2 (ja) | 2006-11-16 | 2006-11-16 | 半導体装置の製造方法 |
US11/979,798 US20080119054A1 (en) | 2006-11-16 | 2007-11-08 | Method of manufacturing semiconductor device |
CN2007101864044A CN101183645B (zh) | 2006-11-16 | 2007-11-16 | 半导体器件的制造方法 |
US14/321,006 US9466503B2 (en) | 2006-11-16 | 2014-07-01 | Method of manufacturing semiconductor device |
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JP5103006B2 (ja) | 2006-11-16 | 2012-12-19 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
CN101937866B (zh) * | 2009-07-03 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | 金属布线的制作方法 |
CN102024790B (zh) * | 2009-09-22 | 2012-08-22 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件、其制造方法以及包含其的集成电路和电子设备 |
CN102087992B (zh) * | 2009-12-04 | 2013-04-17 | 中芯国际集成电路制造(上海)有限公司 | 接触孔的形成方法 |
US11031279B2 (en) * | 2016-12-14 | 2021-06-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device with reduced trench loading effect |
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JP2008130604A (ja) | 2008-06-05 |
CN101183645B (zh) | 2013-08-21 |
US20140315388A1 (en) | 2014-10-23 |
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