JP4597135B2 - コバルト含有合金による銅の選択的自己開始無電解キャッピング - Google Patents
コバルト含有合金による銅の選択的自己開始無電解キャッピング Download PDFInfo
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- JP4597135B2 JP4597135B2 JP2006535421A JP2006535421A JP4597135B2 JP 4597135 B2 JP4597135 B2 JP 4597135B2 JP 2006535421 A JP2006535421 A JP 2006535421A JP 2006535421 A JP2006535421 A JP 2006535421A JP 4597135 B2 JP4597135 B2 JP 4597135B2
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- cobalt
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- 229910017052 cobalt Inorganic materials 0.000 title claims description 190
- 239000010941 cobalt Substances 0.000 title claims description 190
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 title claims description 190
- 239000000956 alloy Substances 0.000 title description 40
- 229910045601 alloy Inorganic materials 0.000 title description 39
- 239000010949 copper Substances 0.000 title description 35
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title description 33
- 229910052802 copper Inorganic materials 0.000 title description 32
- 239000000243 solution Substances 0.000 claims description 412
- 238000007747 plating Methods 0.000 claims description 151
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 123
- 238000000034 method Methods 0.000 claims description 107
- 238000000151 deposition Methods 0.000 claims description 101
- 239000000758 substrate Substances 0.000 claims description 99
- 230000008021 deposition Effects 0.000 claims description 82
- 239000007853 buffer solution Substances 0.000 claims description 74
- 229910001868 water Inorganic materials 0.000 claims description 74
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 66
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 64
- 239000008139 complexing agent Substances 0.000 claims description 64
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 claims description 55
- 230000003750 conditioning effect Effects 0.000 claims description 49
- 239000003638 chemical reducing agent Substances 0.000 claims description 48
- 229910052751 metal Inorganic materials 0.000 claims description 48
- 239000002184 metal Substances 0.000 claims description 48
- 230000008569 process Effects 0.000 claims description 48
- 239000000203 mixture Substances 0.000 claims description 40
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 claims description 33
- 229910000085 borane Inorganic materials 0.000 claims description 32
- 230000001143 conditioned effect Effects 0.000 claims description 32
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 31
- 239000001301 oxygen Substances 0.000 claims description 31
- 229910052760 oxygen Inorganic materials 0.000 claims description 31
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 30
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 29
- 229910052721 tungsten Inorganic materials 0.000 claims description 29
- 239000010937 tungsten Substances 0.000 claims description 29
- 238000005137 deposition process Methods 0.000 claims description 21
- 238000002156 mixing Methods 0.000 claims description 21
- 239000003002 pH adjusting agent Substances 0.000 claims description 20
- 239000004094 surface-active agent Substances 0.000 claims description 20
- 239000004471 Glycine Substances 0.000 claims description 15
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 15
- 229910052750 molybdenum Inorganic materials 0.000 claims description 15
- 239000011733 molybdenum Substances 0.000 claims description 15
- 150000003839 salts Chemical class 0.000 claims description 13
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 12
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 12
- 239000004327 boric acid Substances 0.000 claims description 12
- 230000004913 activation Effects 0.000 claims description 9
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 claims description 5
- 150000004677 hydrates Chemical class 0.000 claims description 4
- PKEYUIGYMIUDOO-UHFFFAOYSA-N O=[W+2].N Chemical group O=[W+2].N PKEYUIGYMIUDOO-UHFFFAOYSA-N 0.000 claims description 2
- 229940011182 cobalt acetate Drugs 0.000 claims description 2
- QAHREYKOYSIQPH-UHFFFAOYSA-L cobalt(II) acetate Chemical compound [Co+2].CC([O-])=O.CC([O-])=O QAHREYKOYSIQPH-UHFFFAOYSA-L 0.000 claims description 2
- DDFYFBUWEBINLX-UHFFFAOYSA-M tetramethylammonium bromide Chemical compound [Br-].C[N+](C)(C)C DDFYFBUWEBINLX-UHFFFAOYSA-M 0.000 claims description 2
- 150000001860 citric acid derivatives Chemical class 0.000 claims 2
- 239000008367 deionised water Substances 0.000 description 49
- 229910021641 deionized water Inorganic materials 0.000 description 49
- 239000012141 concentrate Substances 0.000 description 30
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 30
- 238000004140 cleaning Methods 0.000 description 25
- 239000000872 buffer Substances 0.000 description 22
- 238000007772 electroless plating Methods 0.000 description 22
- 239000002738 chelating agent Substances 0.000 description 19
- 239000004020 conductor Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 13
- -1 alkanolamine Chemical compound 0.000 description 12
- 150000001875 compounds Chemical class 0.000 description 12
- 239000002245 particle Substances 0.000 description 12
- 238000012545 processing Methods 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 11
- 239000003989 dielectric material Substances 0.000 description 11
- 229910021645 metal ion Inorganic materials 0.000 description 11
- 239000003381 stabilizer Substances 0.000 description 10
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 150000001412 amines Chemical class 0.000 description 8
- 230000003139 buffering effect Effects 0.000 description 8
- 239000000356 contaminant Substances 0.000 description 8
- 238000007872 degassing Methods 0.000 description 8
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 238000006722 reduction reaction Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 150000001413 amino acids Chemical group 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 239000011574 phosphorus Substances 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 6
- 229940123973 Oxygen scavenger Drugs 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 239000002585 base Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 230000003197 catalytic effect Effects 0.000 description 6
- 229960004643 cupric oxide Drugs 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000011065 in-situ storage Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 5
- 239000005751 Copper oxide Substances 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 229910000431 copper oxide Inorganic materials 0.000 description 5
- 230000009977 dual effect Effects 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 5
- 239000002699 waste material Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 4
- 239000012190 activator Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000000536 complexating effect Effects 0.000 description 4
- 150000004985 diamines Chemical class 0.000 description 4
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 230000000977 initiatory effect Effects 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 229920000768 polyamine Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 3
- 150000001735 carboxylic acids Chemical group 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910001429 cobalt ion Inorganic materials 0.000 description 3
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 229910001431 copper ion Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 229940098779 methanesulfonic acid Drugs 0.000 description 3
- MEFBJEMVZONFCJ-UHFFFAOYSA-N molybdate Chemical compound [O-][Mo]([O-])(=O)=O MEFBJEMVZONFCJ-UHFFFAOYSA-N 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 235000010323 ascorbic acid Nutrition 0.000 description 2
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- 239000011668 ascorbic acid Substances 0.000 description 2
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical group [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- JPNWDVUTVSTKMV-UHFFFAOYSA-N cobalt tungsten Chemical compound [Co].[W] JPNWDVUTVSTKMV-UHFFFAOYSA-N 0.000 description 2
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 2
- 239000002274 desiccant Substances 0.000 description 2
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- 229910052757 nitrogen Inorganic materials 0.000 description 2
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
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- 229920005591 polysilicon Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- UBQKCCHYAOITMY-UHFFFAOYSA-N pyridin-2-ol Chemical group OC1=CC=CC=N1 UBQKCCHYAOITMY-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000000527 sonication Methods 0.000 description 2
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 2
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 description 2
- OMAWWKIPXLIPDE-UHFFFAOYSA-N (ethyldiselanyl)ethane Chemical compound CC[Se][Se]CC OMAWWKIPXLIPDE-UHFFFAOYSA-N 0.000 description 1
- OVSKIKFHRZPJSS-UHFFFAOYSA-N 2,4-D Chemical compound OC(=O)COC1=CC=C(Cl)C=C1Cl OVSKIKFHRZPJSS-UHFFFAOYSA-N 0.000 description 1
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- CIWBSHSKHKDKBQ-DUZGATOHSA-N D-araboascorbic acid Natural products OC[C@@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-DUZGATOHSA-N 0.000 description 1
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- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000002879 Lewis base Substances 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000011260 aqueous acid Substances 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- JBANFLSTOJPTFW-UHFFFAOYSA-N azane;boron Chemical compound [B].N JBANFLSTOJPTFW-UHFFFAOYSA-N 0.000 description 1
- XUFUCDNVOXXQQC-UHFFFAOYSA-L azane;hydroxy-(hydroxy(dioxo)molybdenio)oxy-dioxomolybdenum Chemical compound N.N.O[Mo](=O)(=O)O[Mo](O)(=O)=O XUFUCDNVOXXQQC-UHFFFAOYSA-L 0.000 description 1
- UORVGPXVDQYIDP-BJUDXGSMSA-N borane Chemical class [10BH3] UORVGPXVDQYIDP-BJUDXGSMSA-N 0.000 description 1
- GKFJEDWZQZKYHV-UHFFFAOYSA-N borane;2-methylpropan-2-amine Chemical compound B.CC(C)(C)N GKFJEDWZQZKYHV-UHFFFAOYSA-N 0.000 description 1
- WVMHLYQJPRXKLC-UHFFFAOYSA-N borane;n,n-dimethylmethanamine Chemical compound B.CN(C)C WVMHLYQJPRXKLC-UHFFFAOYSA-N 0.000 description 1
- UWTDFICHZKXYAC-UHFFFAOYSA-N boron;oxolane Chemical compound [B].C1CCOC1 UWTDFICHZKXYAC-UHFFFAOYSA-N 0.000 description 1
- NNTOJPXOCKCMKR-UHFFFAOYSA-N boron;pyridine Chemical compound [B].C1=CC=NC=C1 NNTOJPXOCKCMKR-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- XEVRDFDBXJMZFG-UHFFFAOYSA-N carbonyl dihydrazine Chemical compound NNC(=O)NN XEVRDFDBXJMZFG-UHFFFAOYSA-N 0.000 description 1
- 150000001734 carboxylic acid salts Chemical class 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
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- 239000007979 citrate buffer Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- GVPFVAHMJGGAJG-UHFFFAOYSA-L cobalt dichloride Chemical compound [Cl-].[Cl-].[Co+2] GVPFVAHMJGGAJG-UHFFFAOYSA-L 0.000 description 1
- 229940044175 cobalt sulfate Drugs 0.000 description 1
- 229910000361 cobalt sulfate Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
- 229940112669 cuprous oxide Drugs 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- FVCOIAYSJZGECG-UHFFFAOYSA-N diethylhydroxylamine Chemical compound CCN(O)CC FVCOIAYSJZGECG-UHFFFAOYSA-N 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- AAQNGTNRWPXMPB-UHFFFAOYSA-N dipotassium;dioxido(dioxo)tungsten Chemical compound [K+].[K+].[O-][W]([O-])(=O)=O AAQNGTNRWPXMPB-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- MOTZDAYCYVMXPC-UHFFFAOYSA-N dodecyl hydrogen sulfate Chemical compound CCCCCCCCCCCCOS(O)(=O)=O MOTZDAYCYVMXPC-UHFFFAOYSA-N 0.000 description 1
- 229940043264 dodecyl sulfate Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 235000010350 erythorbic acid Nutrition 0.000 description 1
- 239000004318 erythorbic acid Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008236 heating water Substances 0.000 description 1
- 239000012510 hollow fiber Substances 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000033444 hydroxylation Effects 0.000 description 1
- 238000005805 hydroxylation reaction Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229940026239 isoascorbic acid Drugs 0.000 description 1
- 150000007527 lewis bases Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 150000002751 molybdenum Chemical class 0.000 description 1
- WHIVNJATOVLWBW-UHFFFAOYSA-N n-butan-2-ylidenehydroxylamine Chemical compound CCC(C)=NO WHIVNJATOVLWBW-UHFFFAOYSA-N 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- GSWAOPJLTADLTN-UHFFFAOYSA-N oxidanimine Chemical compound [O-][NH3+] GSWAOPJLTADLTN-UHFFFAOYSA-N 0.000 description 1
- 150000002940 palladium Chemical class 0.000 description 1
- GPNDARIEYHPYAY-UHFFFAOYSA-N palladium(ii) nitrate Chemical compound [Pd+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O GPNDARIEYHPYAY-UHFFFAOYSA-N 0.000 description 1
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 235000015393 sodium molybdate Nutrition 0.000 description 1
- 239000011684 sodium molybdate Substances 0.000 description 1
- TVXXNOYZHKPKGW-UHFFFAOYSA-N sodium molybdate (anhydrous) Chemical compound [Na+].[Na+].[O-][Mo]([O-])(=O)=O TVXXNOYZHKPKGW-UHFFFAOYSA-N 0.000 description 1
- XMVONEAAOPAGAO-UHFFFAOYSA-N sodium tungstate Chemical compound [Na+].[Na+].[O-][W]([O-])(=O)=O XMVONEAAOPAGAO-UHFFFAOYSA-N 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- WYURNTSHIVDZCO-UHFFFAOYSA-N tetrahydrofuran Substances C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 description 1
- GPRLSGONYQIRFK-MNYXATJNSA-N triton Chemical compound [3H+] GPRLSGONYQIRFK-MNYXATJNSA-N 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
Images
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C23C18/1601—Process or apparatus
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
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Description
[0002]本発明の実施形態は、一般的には、電子デバイスにおける導電層上にキャッピング層を堆積させる無電解堆積溶液を形成し用いるための組成物、キット及び方法、特に、銅の表面上にコバルト含有層を堆積させるための組成物、キット及び方法に関する。
[0003]銅がアルミニウムより抵抗が小さく(アルミニウムが室温で3.1μΩ-cmであるのに比べて1.67μΩ-cm)、電流容量が大きく、且つエレクトロマイグレーション抵抗が著しく大きいことから、銅とその合金はサブミクロンの相互接続技術の選択金属になった。これらの特性は、高レベルの集積化と高デバイス速度で受ける、より高い電流密度を支持するのに重要である。更に、銅は熱伝導性が良好であり、非常に純粋な状態で入手できる。
[0040]前洗浄プロセスは、コバルト含有物質を堆積させる前に、基板表面上で行われる。洗浄液は、表面を洗浄し前調整するために、基板表面上の全体に分配されるか噴霧される。洗浄プロセスは、続いての無電解堆積プロセスと同様の処理セルで行われるインサイチュプロセスであってもよい。或いは、基板は、続いての無電解堆積処理セルとは別の処理セルで前洗浄されてもよい。
[0043]調整緩衝溶液はキレート化剤又は錯化剤、緩衝益、pH調整化合物、水を含有する濃縮物である。キレート化剤又は錯化剤は、通常、約200mM〜約2M、好ましくは約200mM〜約600mMの濃度で調整緩衝溶液中にある。錯化剤は、たいていアミノ酸、カルボン酸、ジカルボン酸、ポリカルボン酸、アミノ酸、アミン、ジアミン、ポリアミン、アルキルアミン、アルカノールアミン、アルコキシアミンのような官能基を有してもよい。錯化剤は、クエン酸、グリシン、エチレンジアミン(EDA)、モノエタノールアミン、ジエタノールアミン(DEA)、トリエタノールアミン(TEA)、それらの誘導体、それらの塩、それらの組合わせを含むことができる。一実施形態においては、クエン酸又はそれぞれのクエン酸塩は、好ましい錯化剤である。他の実施形態においては、クエン酸やグリシンは、いずれも調整緩衝溶液中に含まれる。他の実施形態においては、クエン酸、DEA、グリシンが調整緩衝溶液中に含まれる。
[0048]一般的には、コバルト含有溶液は、コバルト源と、タングステン源又はモリブデン源のような第2金属源と、錯化剤又はキレート化剤と、pH調整剤と、任意の界面活性化剤と、他の任意の添加剤と、水とを含む濃縮物である。コバルト含有溶液は、約50mM〜約200mM、好ましくは約80mM〜約150mMの濃度範囲であってもよいコバルト源を含有する。コバルト源は、あらゆる水溶性コバルト源(例えば、Co2+)、例えば、硫酸コバルト(CoSO4)、塩化コバルト(CoCl2)、酢酸コバルト((CH3CO2)2Co)、タングステン酸コバルト(CoWO4)、それらの誘導体、それらの水和物、それらの組合わせを含むことができる。いくつかのコバルト源は、CoSO4・7H2O、CoCl2・6H2O、(CH3CO2)2Co・4H2Oのような水和物誘導体を有する。一実施例においては、硫酸コバルトは、好ましいコバルト源である。例えば、CoSO4・7H2Oは、約50mM〜約150mMの範囲の濃度でコバルト含有溶液中に存在することができる。他の実施例においては、CoCl2・6H2Oは、約50mM〜約150mMの範囲の濃度でコバルト含有溶液中に存在することができる。
[0056]緩衝化還元溶液は、次亜リン酸塩源、活性化剤又はボラン還元剤のような共還元剤、錯化剤/キレート化剤、pH調整剤、任意の安定剤、水を含有する濃縮物である。次亜リン酸塩源は、約50mM〜約500mM、好ましくは約100mM〜約300mMの濃度範囲で緩衝化還元溶液中にあってもよい。次亜リン酸塩源は、メッキプロセスの間、還元剤として作用し、メッキ溶液中に溶解した金属イオンを化学的に還元する。次亜リン酸塩源は、堆積したコバルト含有物質(例えば、CoP、CoWP又はCoWPB)のリン源であってもよい。次亜リン酸塩源は、次亜リン酸(H3PO2)、それらの塩及びそれらの組合わせより選ぶことができる。溶液中で解離すると、次亜リン酸塩源はH2PO2 1-として存在し、Na1+、K1+、Ca2+、NH4 1+、(CH3)4N1+(TMA)とそれらの組合わせを含む塩、好ましくは、次亜リン酸塩源は一塩基性次亜リン酸テトラメチルアンモニウム([(CH3)4N][H2PO2])である。一実施例においては、緩衝化還元溶液は、H3PO2(50容量%)から調製されて約200mM〜約300mMの次亜リン酸塩濃度を得る。
[0064]メッキ溶液は、調整緩衝溶液、コバルト含有溶液、緩衝化還元溶液を脱イオン水に合わせることによって形成することができる。メッキ溶液の組成物は、pH変動を減少させるとともに溶液の中の溶解した化学成分の維持を援助する緩衝剤を含んでいる。インライン混合においてメッキ溶液の成分を合わせることによる使用時混合は、これらの目標を達成させるのに効率のよい有効なプロセスである。
[00100]次の実施例においては、300mmシリコンAMAT MTC CD90E-テストパターンウエハを試料基板としてコバルト含有合金の無電解堆積に用いた。基板は、ライン、パッド、バイアのようなさらされた銅相互接続構造を含み、誘電体膜の中で電気的に絶縁されている。上記の実施形態に示されるように、基板表面をCMPプロセスで研磨され、続いて、無電解メッキプロセスによってCoWP合金膜で選択的に被覆した。メッキプロセスは、フェースアップ“パッドルメッキ”プロセスを用いた。連続した一様なコバルト含有膜は、図3に示される走査電子顕微鏡(SEM)からの画像で示されるように異なる銅表面上で選択的に成長した。
Claims (49)
- 無電解堆積溶液を形成する方法であって、
第1pH値を有し且つ第1錯化剤を含む調整緩衝溶液を形成するステップと、
第2pH値を有し且つコバルト源、タングステン源及び第2錯化剤を含むコバルト含有溶液を形成するステップと、
第3pH値を有し且つ次亜リン酸塩源及びボラン還元剤を含む緩衝化還元溶液を形成するステップと、
該調整緩衝溶液、該コバルト含有溶液、該緩衝化還元溶液を合わせて、
1mM〜30mMのコバルト濃度範囲と、
0.1mM〜5mMのタングステン濃度範囲と、
5mM〜50mMの次亜リン酸塩濃度範囲と、
5mM〜50mMのボラン濃度範囲と、
8〜10の範囲の全pH値と、
を含む無電解堆積溶液を形成するステップと、
を含む前記方法。 - 該緩衝化還元溶液が、更に第3錯化剤を含んでいる、請求項1記載の方法。
- 該第1錯化剤、該第2錯化剤及び該第3錯化剤が、独立してクエン酸、クエン酸塩、グリシン、アルカノールアミン、それらの誘導体、それらの塩及びそれらの組合わせからなる群より選ばれる、請求項2記載の方法。
- 該第1錯化剤、該第2錯化剤及び該第3錯化剤がクエン酸塩である、請求項3記載の方法。
- 該無電解堆積溶液が50mM〜300mMの範囲のクエン酸塩濃度を有する、請求項4記載の方法。
- 該第1pH値、該第2pH値及び該第3pH値が8〜10の範囲にある、請求項3記載の方法。
- 水と、該調整緩衝溶液、該コバルト含有溶液及び該緩衝化還元溶液と合わせて、該無電解堆積溶液を形成する、請求項6記載の方法。
- 該水が、該緩衝化還元溶液より高い水温である、請求項7記載の方法。
- 該水温が70℃〜95℃である、請求項8記載の方法。
- 該無電解堆積溶液が、50℃〜80℃の温度を有する、請求項9記載の方法。
- 該水が1ppm以下の酸素濃度を有する、請求項7記載の方法。
- 該無電解堆積溶液が3ppm以下の酸素濃度を有する、請求項7記載の方法。
- 無電解堆積溶液を形成するためのキットであって、
第1pH値を有し且つ第1錯化剤を含む調整緩衝溶液と、
第2pH値を有し且つコバルト源、第2金属源及び第2錯化剤を含むコバルト含有溶液と、
第3pH値を有し且つ次亜リン酸塩源及びボラン還元剤を含む緩衝化還元溶液と、
少なくとも調整緩衝溶液、コバルト含有溶液及び緩衝化還元溶液を合わせて、無電解堆積溶液を形成するための取扱説明書と、
を含む前記キット。 - 該第2金属源が、タングステン源又はモリブデン源からなる群より選ばれる、請求項13記載のキット。
- 該第2金属源がタングステン源であり、該コバルト含有溶液中の濃度が1mM〜30mMの範囲にある、請求項14記載のキット。
- 該第2金属源がモリブデン源であり、該コバルト含有溶液中の濃度が100ppm〜300ppmの範囲にある、請求項14記載のキット。
- 該コバルト源の該コバルト含有溶液中の濃度が50mM〜150mMの範囲にある、請求項15記載のキット。
- 該次亜リン酸塩源の該緩衝化還元溶液中の濃度が200mM〜300mMの範囲にある、請求項17記載のキット。
- 該ボラン還元剤の該緩衝化還元溶液中の濃度が100mM〜300mMである、請求項18記載のキット。
- 該緩衝化還元溶液が、更に第3錯化剤を含んでいる、請求項19記載のキット。
- 該第1錯化剤、該第2錯化剤、該第3錯化剤が、独立してクエン酸、クエン酸塩、グリシン、アルカノールアミン、それらの誘導体、それらの塩及びそれらの組合わせからなる群より選ばれる、請求項20記載のキット。
- 該第1錯化剤、該第2錯化剤、該第3錯化剤がクエン酸塩である、請求項21記載のキット。
- 該調整緩衝溶液、該コバルト含有溶液及び該緩衝化還元溶液がそれぞれ200mM〜500mMの範囲のクエン酸塩濃度を有する、請求項22記載のキット。
- 該第1pH値、該第2pH値及び該第3pH値が8〜10の範囲にある、請求項23記載のキット。
- クエン酸塩をベースとした堆積溶液を形成するためのキットであって、
第1pH値を有し且つクエン酸塩及びアルカノールアミンを含む調整緩衝溶液と、
第2pH値を有し且つコバルト源、第2金属源及びクエン酸塩を含むコバルト含有溶液と、
第3pH値を有し且つ次亜リン酸塩源、ボラン還元剤及びクエン酸塩を含む緩衝化還元溶液と、
少なくとも該調整緩衝溶液、該コバルト含有溶液及び該緩衝化還元溶液を合わせて、クエン酸塩をベースとした堆積溶液を形成するための取扱説明書と、
を含む前記キット。 - 該クエン酸塩をベースとした堆積溶液のクエン酸塩濃度が、50mM〜300mMの範囲にある、請求項25記載のキット。
- 該コバルト源と該第2金属源の合わせた金属濃度が8mM〜15mMの範囲にある、請求項26記載のキット。
- 該クエン酸塩濃度と該合わせた金属濃度が8:1以上のモル比である、請求項27記載のキット。
- 該モル比が10:1以上である、請求項28記載のキット。
- 該モル比が12:1以上である、請求項29記載のキット。
- メッキ溶液の組成物であって、
5mM〜15mMの濃度範囲のコバルト源と、
1mM〜3mMの濃度範囲のタングステン源と、
15mM〜35mMの濃度範囲の次亜リン酸塩源と、
10mM〜30mMの濃度範囲のボラン還元剤と、
90mM〜200mMの濃度範囲のクエン酸塩と、
50mM〜150mMの濃度範囲のアルカノールアミンと、
5mM〜20mMの濃度範囲のホウ酸と、
100ppm以下の濃度範囲の界面活性化剤と、
8〜10のpHを維持する濃度のpH調整剤と、
を含む前記組成物。 - 該メッキ溶液の酸素濃度が3ppm以下である、請求項31記載の組成物。
- 該アルカノールアミンが、DEA、TEA、それらの誘導体及びそれらの組合わせからなる群より選ばれる、請求項32記載の組成物。
- 該コバルト源が、CoSO4、CoCl2、酢酸コバルト、水溶性Co2+源、それらの誘導体、それらの水和物及びそれらの組合わせからなる群より選ばれる、請求項33記載の組成物。
- 該タングステン源が、酸化タングステンアンモニウム、タングステン酸、水溶性WO4 2-源、それらの誘導体及びそれらの組合わせからなる群より選ばれる、請求項34記載の組成物。
- 該ボラン還元剤が、DMAB、TMAB、t‐BuNH2・BH3、THF・BH3、C5H5N・BH3、NH3・BH3、ボラン、ジボラン、それらの誘導体、それらの錯体及びそれらの組合わせからなる群より選ばれる、請求項35記載の組成物。
- 該界面活性剤が、ドデシル硫酸ナトリウム、それらの塩又はそれらの誘導体を含んでいる、請求項36記載の組成物。
- メッキ溶液の組成物であって、
5mM〜15mMの濃度範囲のコバルト源と、
5mM以下の濃度範囲の第2金属源と、
15mM〜35mMの濃度範囲の次亜リン酸塩源と、
10mM〜30mMの濃度範囲のボラン還元剤と、
90mM〜200mMの濃度範囲のクエン酸塩と、
50mM〜200mMの濃度範囲のアルカノールアミンと、
5mM〜200mMの濃度範囲のホウ酸と、
100ppm以下の濃度範囲の界面活性化剤と、
8〜10のpHを維持する濃度のpH調整剤と、
を含む前記組成物。 - 該第2金属源が、タングステン源又はモリブデン源からなる群より選ばれる、請求項38記載の組成物。
- 該第2金属源がタングステン源であり、1mM〜3mMの濃度を有する、請求項39記載の組成物。
- 該第2金属源がモリブデン源であり、50ppm〜500ppmの濃度を有する、請求項39記載の組成物。
- 無電解堆積プロセスによってコバルト含有層を堆積させる方法であって、
基板上の導電層を活性化溶液にさらして、活性化した導電層を形成するステップと、
加熱水、調整緩衝溶液、コバルト含有溶液及び緩衝化還元溶液を合わせて、メッキ溶液を形成するステップと、
該活性化した導電層を該メッキ溶液にさらして、該コバルト含有層を堆積させるステップと、
を含む前記方法。 - 該活性化溶液がパラジウム源を含んでいる、請求項42記載の方法。
- 無電解堆積溶液を形成する方法であって、
第1錯化剤を含む調整緩衝溶液を形成するステップと、
コバルト源、タングステン源及び第2錯化剤を含むコバルト含有溶液を形成するステップと、
次亜リン酸塩源及びボラン還元剤を含む緩衝化還元溶液を形成するステップと、
インライン混合システムにおいて加熱した水、該調整緩衝溶液、該コバルト含有溶液及び該緩衝化還元溶液を合わせて、該無電解堆積溶液を形成するステップと、
該無電解堆積溶液を形成した後、該無電解堆積溶液を基板表面に60分以内の時間内に分散させるステップと、
を含む前記方法。 - 該時間が10分以内である、請求項44記載の方法。
- 該時間が2分以内である、請求項45記載の方法。
- 該無電解堆積溶液にさらされる前に、該基板が前洗浄プロセスにさらされる、請求項44記載の方法。
- 該前洗浄プロセスが第1セル内で行われ、該無電解堆積溶液が第2セルに分散される、請求項47記載の方法。
- 該前洗浄プロセスがクエン酸塩を含んでいる、請求項48記載の方法。
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-
2004
- 2004-10-15 WO PCT/US2004/034044 patent/WO2005038084A2/en active Application Filing
- 2004-10-15 TW TW093131416A patent/TW200530427A/zh unknown
- 2004-10-18 KR KR1020067009480A patent/KR20060101484A/ko not_active Application Discontinuation
- 2004-10-18 WO PCT/US2004/034449 patent/WO2005038085A2/en active Application Filing
- 2004-10-18 US US10/967,919 patent/US20050136193A1/en not_active Abandoned
- 2004-10-18 JP JP2006535421A patent/JP4597135B2/ja not_active Expired - Fee Related
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JP2007509235A (ja) | 2007-04-12 |
US20050136193A1 (en) | 2005-06-23 |
WO2005038084A3 (en) | 2005-09-01 |
KR20060101484A (ko) | 2006-09-25 |
WO2005038085A3 (en) | 2005-07-07 |
WO2005038085A2 (en) | 2005-04-28 |
WO2005038084A2 (en) | 2005-04-28 |
EP1682695A2 (en) | 2006-07-26 |
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