JP4588312B2 - 発光装置の作製方法 - Google Patents

発光装置の作製方法 Download PDF

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Publication number
JP4588312B2
JP4588312B2 JP2003402468A JP2003402468A JP4588312B2 JP 4588312 B2 JP4588312 B2 JP 4588312B2 JP 2003402468 A JP2003402468 A JP 2003402468A JP 2003402468 A JP2003402468 A JP 2003402468A JP 4588312 B2 JP4588312 B2 JP 4588312B2
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Japan
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tft
electrode
semiconductor film
current control
gate
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Expired - Fee Related
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JP2003402468A
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Japanese (ja)
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JP2005164880A (ja
JP2005164880A5 (enExample
Inventor
慎志 前川
厳 藤井
光明 納
彩 安西
優 山崎
良太 福本
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2003402468A priority Critical patent/JP4588312B2/ja
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Publication of JP2005164880A5 publication Critical patent/JP2005164880A5/ja
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JP2003402468A 2003-12-02 2003-12-02 発光装置の作製方法 Expired - Fee Related JP4588312B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003402468A JP4588312B2 (ja) 2003-12-02 2003-12-02 発光装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003402468A JP4588312B2 (ja) 2003-12-02 2003-12-02 発光装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005164880A JP2005164880A (ja) 2005-06-23
JP2005164880A5 JP2005164880A5 (enExample) 2007-01-25
JP4588312B2 true JP4588312B2 (ja) 2010-12-01

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JP2003402468A Expired - Fee Related JP4588312B2 (ja) 2003-12-02 2003-12-02 発光装置の作製方法

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JP (1) JP4588312B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101351816B1 (ko) * 2005-07-06 2014-01-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 및 전자 기기
WO2007029374A1 (ja) * 2005-09-01 2007-03-15 Sharp Kabushiki Kaisha 表示装置
JP5241173B2 (ja) * 2007-08-28 2013-07-17 キヤノン株式会社 有機ｅｌ素子の製造方法
KR101458911B1 (ko) 2008-05-07 2014-11-12 삼성디스플레이 주식회사 표시 장치
WO2012035984A1 (en) * 2010-09-15 2012-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
KR20230098374A (ko) 2011-10-18 2023-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
US12176356B2 (en) 2011-10-18 2024-12-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor and light-emitting element
KR20140026257A (ko) * 2012-08-23 2014-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6512504B1 (en) * 1999-04-27 2003-01-28 Semiconductor Energy Laborayory Co., Ltd. Electronic device and electronic apparatus
TW525122B (en) * 1999-11-29 2003-03-21 Semiconductor Energy Lab Electronic device
JP4831862B2 (ja) * 1999-11-30 2011-12-07 株式会社半導体エネルギー研究所 電子装置
JP2003015548A (ja) * 2001-06-29 2003-01-17 Seiko Epson Corp 有機ｅｌ表示体の製造方法、半導体素子の配置方法、半導体装置の製造方法、電気光学装置の製造方法、電気光学装置、および電子機器
JP2003058077A (ja) * 2001-08-08 2003-02-28 Fuji Photo Film Co Ltd ミクロファブリケーション用基板、その製造方法および像状薄膜形成方法
JP4123411B2 (ja) * 2002-03-26 2008-07-23 株式会社半導体エネルギー研究所 発光装置
JP3965562B2 (ja) * 2002-04-22 2007-08-29 セイコーエプソン株式会社 デバイスの製造方法、デバイス、電気光学装置及び電子機器
JP2003332070A (ja) * 2002-05-16 2003-11-21 Seiko Epson Corp 電気光学装置およびその製造方法、ならびに電子機器

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JP2005164880A (ja) 2005-06-23

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