JP4586266B2 - 薄膜トランジスタ製造システム及び物体表面の評価装置 - Google Patents

薄膜トランジスタ製造システム及び物体表面の評価装置 Download PDF

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Publication number
JP4586266B2
JP4586266B2 JP2000384417A JP2000384417A JP4586266B2 JP 4586266 B2 JP4586266 B2 JP 4586266B2 JP 2000384417 A JP2000384417 A JP 2000384417A JP 2000384417 A JP2000384417 A JP 2000384417A JP 4586266 B2 JP4586266 B2 JP 4586266B2
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Japan
Prior art keywords
polysilicon film
value
evaluation
contrast
film
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Expired - Fee Related
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JP2000384417A
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Japanese (ja)
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JP2002184715A5 (enExample
JP2002184715A (ja
Inventor
裕之 和田
幸一 田附
暢彦 梅津
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Sony Corp
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Sony Corp
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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2000384417A 2000-12-18 2000-12-18 薄膜トランジスタ製造システム及び物体表面の評価装置 Expired - Fee Related JP4586266B2 (ja)

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JP2000384417A JP4586266B2 (ja) 2000-12-18 2000-12-18 薄膜トランジスタ製造システム及び物体表面の評価装置

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JP2000384417A JP4586266B2 (ja) 2000-12-18 2000-12-18 薄膜トランジスタ製造システム及び物体表面の評価装置

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JP2002184715A JP2002184715A (ja) 2002-06-28
JP2002184715A5 JP2002184715A5 (enExample) 2007-07-12
JP4586266B2 true JP4586266B2 (ja) 2010-11-24

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4770028B2 (ja) * 2001-01-19 2011-09-07 ソニー株式会社 ポリシリコン評価装置及び薄膜トランジスタ製造システム
JP4770027B2 (ja) * 2001-01-19 2011-09-07 ソニー株式会社 ポリシリコン評価方法並びに薄膜トランジスタ製造システム及び方法
JP4774598B2 (ja) * 2001-01-19 2011-09-14 ソニー株式会社 ポリシリコン評価装置及び薄膜トランジスタ製造システム
JP4715016B2 (ja) * 2001-02-15 2011-07-06 ソニー株式会社 ポリシリコン膜の評価方法
JP5097414B2 (ja) * 2007-03-02 2012-12-12 株式会社アルバック レーザーアニール装置及びその方法
JP5498659B2 (ja) * 2008-02-07 2014-05-21 株式会社半導体エネルギー研究所 レーザ照射位置安定性評価方法及びレーザ照射装置
WO2011048923A1 (en) * 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. E-book reader
JP5444053B2 (ja) * 2010-03-15 2014-03-19 株式会社日立ハイテクノロジーズ 多結晶シリコン薄膜検査方法及びその装置
JP5878835B2 (ja) * 2012-06-28 2016-03-08 シャープ株式会社 結晶膜の検査方法及び検査装置
KR102520711B1 (ko) * 2018-05-15 2023-04-12 삼성디스플레이 주식회사 결정화도 검사 장치, 및 이를 이용한 검사 방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3342387B2 (ja) * 1997-02-28 2002-11-05 三洋電機株式会社 半導体膜の評価方法、評価装置及び形成方法
JP3547979B2 (ja) * 1998-03-17 2004-07-28 三洋電機株式会社 半導体膜の形成装置及び形成方法
JP4116141B2 (ja) * 1998-03-26 2008-07-09 東芝松下ディスプレイテクノロジー株式会社 結晶シリコン膜の製造方法
JP2000031229A (ja) * 1998-07-14 2000-01-28 Toshiba Corp 半導体薄膜の検査方法及びそれを用いた半導体薄膜の製造方法
JP4472066B2 (ja) * 1999-10-29 2010-06-02 シャープ株式会社 結晶性半導体膜の製造方法、結晶化装置及びｔｆｔの製造方法

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