JP4583716B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4583716B2
JP4583716B2 JP2003024390A JP2003024390A JP4583716B2 JP 4583716 B2 JP4583716 B2 JP 4583716B2 JP 2003024390 A JP2003024390 A JP 2003024390A JP 2003024390 A JP2003024390 A JP 2003024390A JP 4583716 B2 JP4583716 B2 JP 4583716B2
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JP
Japan
Prior art keywords
conductive layer
region
impurity
insulating film
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003024390A
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English (en)
Japanese (ja)
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JP2003229437A (ja
JP2003229437A5 (cg-RX-API-DMAC7.html
Inventor
節男 中嶋
久 大谷
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2003024390A priority Critical patent/JP4583716B2/ja
Publication of JP2003229437A publication Critical patent/JP2003229437A/ja
Publication of JP2003229437A5 publication Critical patent/JP2003229437A5/ja
Application granted granted Critical
Publication of JP4583716B2 publication Critical patent/JP4583716B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2003024390A 1998-11-16 2003-01-31 半導体装置 Expired - Fee Related JP4583716B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003024390A JP4583716B2 (ja) 1998-11-16 2003-01-31 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP32570898 1998-11-16
JP10-325708 1998-11-16
JP2003024390A JP4583716B2 (ja) 1998-11-16 2003-01-31 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP32606299A Division JP3859915B2 (ja) 1998-11-16 1999-11-16 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2003229437A JP2003229437A (ja) 2003-08-15
JP2003229437A5 JP2003229437A5 (cg-RX-API-DMAC7.html) 2007-02-01
JP4583716B2 true JP4583716B2 (ja) 2010-11-17

Family

ID=27758982

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003024390A Expired - Fee Related JP4583716B2 (ja) 1998-11-16 2003-01-31 半導体装置

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JP (1) JP4583716B2 (cg-RX-API-DMAC7.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7482208B2 (en) * 2003-09-18 2009-01-27 Samsung Electronics Co., Ltd. Thin film transistor array panel and method of manufacturing the same
KR100591254B1 (ko) 2004-04-29 2006-06-19 엘지.필립스 엘시디 주식회사 유기전계 발광소자와 그 제조방법
TWI481024B (zh) 2005-01-28 2015-04-11 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7579220B2 (en) 2005-05-20 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device manufacturing method
JP2010056025A (ja) * 2008-08-29 2010-03-11 Casio Comput Co Ltd 発光パネル及び発光パネルの製造方法
JP5372435B2 (ja) * 2008-09-02 2013-12-18 株式会社ジャパンディスプレイ 表示装置
JP5770236B2 (ja) * 2013-09-18 2015-08-26 株式会社ジャパンディスプレイ 表示装置
KR102556021B1 (ko) 2017-10-13 2023-07-17 삼성디스플레이 주식회사 디스플레이 장치 및 그 제조방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2551724B2 (ja) * 1993-03-04 1996-11-06 株式会社高度映像技術研究所 薄膜半導体装置およびその製造方法
JP3762002B2 (ja) * 1996-11-29 2006-03-29 株式会社東芝 薄膜トランジスタ、及び液晶表示装置
US6559906B1 (en) * 1998-01-30 2003-05-06 Hitachi, Ltd. Liquid crystal display device having gate electrode with two conducting layers, one used for self-aligned formation of the TFT semiconductor regions

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Publication number Publication date
JP2003229437A (ja) 2003-08-15

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