JP4578611B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4578611B2
JP4578611B2 JP2000085251A JP2000085251A JP4578611B2 JP 4578611 B2 JP4578611 B2 JP 4578611B2 JP 2000085251 A JP2000085251 A JP 2000085251A JP 2000085251 A JP2000085251 A JP 2000085251A JP 4578611 B2 JP4578611 B2 JP 4578611B2
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film
tft
coating
contamination
impurities
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JP2000085251A
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Japanese (ja)
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JP2000353810A5 (enExample
JP2000353810A (ja
Inventor
真也 角野
舜平 山崎
幸夫 山内
英人 北角
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000085251A priority Critical patent/JP4578611B2/ja
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Publication of JP2000353810A5 publication Critical patent/JP2000353810A5/ja
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JP2000085251A 1999-03-26 2000-03-24 半導体装置の作製方法 Expired - Fee Related JP4578611B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000085251A JP4578611B2 (ja) 1999-03-26 2000-03-24 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-84989 1999-03-26
JP8498999 1999-03-26
JP2000085251A JP4578611B2 (ja) 1999-03-26 2000-03-24 半導体装置の作製方法

Related Child Applications (1)

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JP2010130833A Division JP2010263225A (ja) 1999-03-26 2010-06-08 半導体装置の作製方法

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JP2000353810A JP2000353810A (ja) 2000-12-19
JP2000353810A5 JP2000353810A5 (enExample) 2007-05-24
JP4578611B2 true JP4578611B2 (ja) 2010-11-10

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JP2000085251A Expired - Fee Related JP4578611B2 (ja) 1999-03-26 2000-03-24 半導体装置の作製方法

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW525216B (en) 2000-12-11 2003-03-21 Semiconductor Energy Lab Semiconductor device, and manufacturing method thereof
JP4741569B2 (ja) * 2000-12-21 2011-08-03 株式会社半導体エネルギー研究所 発光装置
JP4067819B2 (ja) * 2000-12-21 2008-03-26 株式会社半導体エネルギー研究所 発光装置
SG111923A1 (en) 2000-12-21 2005-06-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
US6897477B2 (en) 2001-06-01 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and display device
JP3810725B2 (ja) 2001-09-21 2006-08-16 株式会社半導体エネルギー研究所 発光装置及び電子機器
US7232714B2 (en) 2001-11-30 2007-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014236183A (ja) 2013-06-05 2014-12-15 株式会社東芝 イメージセンサ装置及びその製造方法
JP2016021587A (ja) * 2015-09-08 2016-02-04 株式会社半導体エネルギー研究所 半導体装置
JP2017037340A (ja) * 2016-10-26 2017-02-16 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2985253B2 (ja) * 1990-08-07 1999-11-29 セイコーエプソン株式会社 半導体装置の製造方法
JP3483581B2 (ja) * 1991-08-26 2004-01-06 株式会社半導体エネルギー研究所 半導体装置
JPH1117187A (ja) * 1997-06-20 1999-01-22 Fujitsu Ltd 薄膜トランジスタの製造方法

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JP2000353810A (ja) 2000-12-19

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