JP4575147B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4575147B2
JP4575147B2 JP2004381896A JP2004381896A JP4575147B2 JP 4575147 B2 JP4575147 B2 JP 4575147B2 JP 2004381896 A JP2004381896 A JP 2004381896A JP 2004381896 A JP2004381896 A JP 2004381896A JP 4575147 B2 JP4575147 B2 JP 4575147B2
Authority
JP
Japan
Prior art keywords
base substrate
semiconductor element
heat generating
dielectric substrate
side wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004381896A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006190711A5 (https=
JP2006190711A (ja
Inventor
一考 高木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2004381896A priority Critical patent/JP4575147B2/ja
Priority to US11/317,182 priority patent/US7605465B2/en
Publication of JP2006190711A publication Critical patent/JP2006190711A/ja
Publication of JP2006190711A5 publication Critical patent/JP2006190711A5/ja
Application granted granted Critical
Publication of JP4575147B2 publication Critical patent/JP4575147B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/13—Containers comprising a conductive base serving as an interconnection
    • H10W76/134—Containers comprising a conductive base serving as an interconnection having other interconnections parallel to the conductive base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/254—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2004381896A 2004-12-28 2004-12-28 半導体装置 Expired - Fee Related JP4575147B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004381896A JP4575147B2 (ja) 2004-12-28 2004-12-28 半導体装置
US11/317,182 US7605465B2 (en) 2004-12-28 2005-12-27 Semiconductor device for high frequency power amplification

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004381896A JP4575147B2 (ja) 2004-12-28 2004-12-28 半導体装置

Publications (3)

Publication Number Publication Date
JP2006190711A JP2006190711A (ja) 2006-07-20
JP2006190711A5 JP2006190711A5 (https=) 2010-05-20
JP4575147B2 true JP4575147B2 (ja) 2010-11-04

Family

ID=36610509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004381896A Expired - Fee Related JP4575147B2 (ja) 2004-12-28 2004-12-28 半導体装置

Country Status (2)

Country Link
US (1) US7605465B2 (https=)
JP (1) JP4575147B2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5085552B2 (ja) * 2006-10-02 2012-11-28 株式会社東芝 半導体装置
JP4558012B2 (ja) * 2007-07-05 2010-10-06 株式会社東芝 半導体パッケージ用放熱プレート及び半導体装置
US20100091477A1 (en) * 2008-10-14 2010-04-15 Kabushiki Kaisha Toshiba Package, and fabrication method for the package
JP5631607B2 (ja) * 2009-08-21 2014-11-26 株式会社東芝 マルチチップモジュール構造を有する高周波回路
JP5450313B2 (ja) 2010-08-06 2014-03-26 株式会社東芝 高周波半導体用パッケージおよびその作製方法
US8471382B2 (en) * 2010-11-18 2013-06-25 Kabushiki Kaisha Toshiba Package and high frequency terminal structure for the same
TWI895109B (zh) * 2024-09-19 2025-08-21 同欣電子工業股份有限公司 複合式板材封裝結構

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0452748U (https=) * 1990-09-12 1992-05-06
JP2863678B2 (ja) * 1992-09-28 1999-03-03 三菱電機株式会社 半導体レーザ装置及びその製造方法
DE4343121A1 (de) * 1993-12-17 1995-06-22 Abb Patent Gmbh Verfahren zur Herstellung einer Gießkeramik
JP3216482B2 (ja) * 1995-06-22 2001-10-09 三菱電機株式会社 高周波回路装置
US6784541B2 (en) * 2000-01-27 2004-08-31 Hitachi, Ltd. Semiconductor module and mounting method for same
US6653730B2 (en) * 2000-12-14 2003-11-25 Intel Corporation Electronic assembly with high capacity thermal interface
JP2002190540A (ja) 2000-12-20 2002-07-05 Kyocera Corp 半導体素子収納用パッケージ
JP2003007928A (ja) * 2001-06-27 2003-01-10 Nissan Motor Co Ltd 半導体装置
KR100432715B1 (ko) * 2001-07-18 2004-05-24 엘지전자 주식회사 방열부재를 갖는 인쇄회로기판 및 그 제조방법

Also Published As

Publication number Publication date
US7605465B2 (en) 2009-10-20
US20060138655A1 (en) 2006-06-29
JP2006190711A (ja) 2006-07-20

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