JP2006190711A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2006190711A JP2006190711A JP2004381896A JP2004381896A JP2006190711A JP 2006190711 A JP2006190711 A JP 2006190711A JP 2004381896 A JP2004381896 A JP 2004381896A JP 2004381896 A JP2004381896 A JP 2004381896A JP 2006190711 A JP2006190711 A JP 2006190711A
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- Prior art keywords
- semiconductor element
- base substrate
- heat
- heat generating
- semiconductor device
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- Granted
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 239000011810 insulating material Substances 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 7
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
【解決手段】金属製ベース基板10と、このベース基板10上に搭載した発熱半導体素子11と、ベース基板10の材料よりも熱伝導率の大きい絶縁材料で形成され、発熱半導体素子11近傍のベース基板10上に配置した第1誘電体基板12および第2誘電体基板13とを具備している。
【選択図】図1
Description
11…発熱半導体素子
12…第1誘電体基板
13…第2誘電体基板
14…側壁
14a…入力側側壁部分
14b…出力側側壁部分
15…蓋
16a…入力用線路
16b…出力用線路
17a…入力用リード線
17b…出力用リード線
W1〜W4…ワイヤー
Ga、Gb…間隙
Claims (3)
- 金属製ベース基板と、このベース基板上に搭載した発熱半導体素子と、前記ベース基板の材料よりも熱伝導率の大きい絶縁材料で形成され、前記発熱半導体素子近傍の前記ベース基板上に配置した絶縁部材とを具備したことを特徴とする半導体装置。
- 絶縁部材上に回路パターンを形成した請求項1記載の半導体装置。
- 発熱半導体素子と絶縁部材との間に間隙が設けられ、前記間隙に絶縁性樹脂を充填した請求項1または請求項2記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004381896A JP4575147B2 (ja) | 2004-12-28 | 2004-12-28 | 半導体装置 |
US11/317,182 US7605465B2 (en) | 2004-12-28 | 2005-12-27 | Semiconductor device for high frequency power amplification |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004381896A JP4575147B2 (ja) | 2004-12-28 | 2004-12-28 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006190711A true JP2006190711A (ja) | 2006-07-20 |
JP2006190711A5 JP2006190711A5 (ja) | 2010-05-20 |
JP4575147B2 JP4575147B2 (ja) | 2010-11-04 |
Family
ID=36610509
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004381896A Expired - Fee Related JP4575147B2 (ja) | 2004-12-28 | 2004-12-28 | 半導体装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7605465B2 (ja) |
JP (1) | JP4575147B2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101058991B1 (ko) * | 2006-10-02 | 2011-08-23 | 가부시끼가이샤 도시바 | 반도체 장치 |
JP4558012B2 (ja) | 2007-07-05 | 2010-10-06 | 株式会社東芝 | 半導体パッケージ用放熱プレート及び半導体装置 |
US20100091477A1 (en) * | 2008-10-14 | 2010-04-15 | Kabushiki Kaisha Toshiba | Package, and fabrication method for the package |
JP5631607B2 (ja) * | 2009-08-21 | 2014-11-26 | 株式会社東芝 | マルチチップモジュール構造を有する高周波回路 |
JP5450313B2 (ja) * | 2010-08-06 | 2014-03-26 | 株式会社東芝 | 高周波半導体用パッケージおよびその作製方法 |
US8471382B2 (en) * | 2010-11-18 | 2013-06-25 | Kabushiki Kaisha Toshiba | Package and high frequency terminal structure for the same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0452748U (ja) * | 1990-09-12 | 1992-05-06 | ||
JPH06112596A (ja) * | 1992-09-28 | 1994-04-22 | Mitsubishi Electric Corp | 半導体レーザ装置及びその製造方法 |
JPH098432A (ja) * | 1995-06-22 | 1997-01-10 | Mitsubishi Electric Corp | 高周波回路装置 |
JP2003007928A (ja) * | 2001-06-27 | 2003-01-10 | Nissan Motor Co Ltd | 半導体装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4343121A1 (de) * | 1993-12-17 | 1995-06-22 | Abb Patent Gmbh | Verfahren zur Herstellung einer Gießkeramik |
US6784541B2 (en) * | 2000-01-27 | 2004-08-31 | Hitachi, Ltd. | Semiconductor module and mounting method for same |
US6653730B2 (en) * | 2000-12-14 | 2003-11-25 | Intel Corporation | Electronic assembly with high capacity thermal interface |
JP2002190540A (ja) | 2000-12-20 | 2002-07-05 | Kyocera Corp | 半導体素子収納用パッケージ |
KR100432715B1 (ko) * | 2001-07-18 | 2004-05-24 | 엘지전자 주식회사 | 방열부재를 갖는 인쇄회로기판 및 그 제조방법 |
-
2004
- 2004-12-28 JP JP2004381896A patent/JP4575147B2/ja not_active Expired - Fee Related
-
2005
- 2005-12-27 US US11/317,182 patent/US7605465B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0452748U (ja) * | 1990-09-12 | 1992-05-06 | ||
JPH06112596A (ja) * | 1992-09-28 | 1994-04-22 | Mitsubishi Electric Corp | 半導体レーザ装置及びその製造方法 |
JPH098432A (ja) * | 1995-06-22 | 1997-01-10 | Mitsubishi Electric Corp | 高周波回路装置 |
JP2003007928A (ja) * | 2001-06-27 | 2003-01-10 | Nissan Motor Co Ltd | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
US7605465B2 (en) | 2009-10-20 |
US20060138655A1 (en) | 2006-06-29 |
JP4575147B2 (ja) | 2010-11-04 |
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