US20050046014A1 - Isolating temperature sensitive components from heat sources in integrated circuits - Google Patents
Isolating temperature sensitive components from heat sources in integrated circuits Download PDFInfo
- Publication number
- US20050046014A1 US20050046014A1 US10/964,386 US96438604A US2005046014A1 US 20050046014 A1 US20050046014 A1 US 20050046014A1 US 96438604 A US96438604 A US 96438604A US 2005046014 A1 US2005046014 A1 US 2005046014A1
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- US
- United States
- Prior art keywords
- trench
- circuit
- substrate
- region
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000758 substrate Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 abstract 1
- 238000002955 isolation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Abstract
Temperature sensitive devices may be shielded from temperature generating devices on the same integrated circuit by appropriately providing a trench that thermally isolates the heat generating devices from the temperature sensitive devices. In one embodiment, the trench may be formed by a back side etch completely through an integrated circuit wafer. The resulting trench may be filled with a thermally insulating material.
Description
- This application is a divisional application of prior U.S. patent application Ser. No. 10/209,986 filed on Aug. 1, 2002 entitled “ISOLATING TEMPERATURE SENSITIVE COMPONENTS FROM HEAT SOURCES IN INTEGRATED CIRCUITS,” which is incorporated herein by reference in its entirety for all purposes.
- This invention relates generally to heat isolation in integrated circuits.
- In integrated circuits, a variety of components may be included. Some of these components may be high heat generators. Other components may be relatively sensitive to either higher temperatures or variations in temperatures.
- In order to reduce costs, it may be desirable to integrate as many different components in the same integrated circuit. This integration not only reduces costs, but also reduces size. However, integrating more components makes it more likely that temperature sensitive devices may be integrated with high heat generating devices.
- Thus, there is a need for better ways to integrated different types of devices into the same integrated circuit without creating heat related problems.
-
FIG. 1 is a bottom plan view of an integrated circuit in accordance with one embodiment of the present invention; and -
FIG. 2 is an enlarged cross-sectional view taken generally along the line 2-2 inFIG. 1 in accordance with one embodiment of the present invention. - Referring to
FIG. 1 , anintegrated circuit 10 may include a variety of integrated components. For example, a circuit or device sensitive to temperature variations may be located at theregion 12 a. A heat generating device or circuit such as a power amplifier may be located at each of theregions region 12 a from both theregions - To this end, a filled, L-
shaped trench 14 a may be arranged around the edges of theregion 12 b. In this case, the two sides of the relativelyrectangular region 12 b facing towards theregion 12 a may be shielded by the filled, L-shaped trench 14 a. Theregion 12 c may be isolated by a completely encircling filledtrench 14 b. The trenches 14 are effective to isolate the heatgenerating circuit regions sensitive circuit region 12 a. - Thus, as shown in
FIG. 2 , aregion 12 c of theintegrated circuit substrate 10 may have formed therein aheat generating circuit 20. Thecircuit 20 may be formed in and on thesemiconductor substrate 11. Over thesubstrate 11 may be a top sidedielectric layer 16. - In one embodiment of the present invention, the trenches 14 may be formed by a back side etch from the back side of the
substrate 11 while thecircuit 10 is in the wafer form. The back side etch may use the top sidedielectric layer 16 as an etch stop. Thus, in one embodiment of the present invention the back side etch may extend completely through thewafer substrate 11 to reach the etch stopdielectric layer 16 on the top side of the wafer. - Thereafter, the trenches 14 may be filled with a
suitable fill material 18 that has suitable heat insulating properties. For example, amorphous silicon dioxide may be utilized as a heat insulatingfill material 18. In some embodiments, no trench fill may be utilized. In other embodiments, the trenches 14 may be formed from the top side of the wafer instead of the back side, using conventional isolation trench technology. - As a result, detrimental high temperatures or temperature fluctuations due to high power consuming devices, such as radio frequency power amplifiers, may be reduced as seen by temperature sensitive devices coexisting on the same integrated
circuit 10. - While the present invention has been described with respect to a limited number of embodiments, those skilled in the art will appreciate numerous modifications and variations therefrom. It is intended that the appended claims cover all such modifications and variations as fall within the true spirit and scope of this present invention.
Claims (16)
1. An integrated circuit comprising:
a heat sensitive region;
a heat generating region; and
a trench arranged to shield the heat generating region from the heat sensitive region.
2. The circuit of claim 1 wherein said trench is arranged around at least two sides of the heat generating region.
3. The circuit of claim 1 wherein said trench completely encircles the heat generating region.
4. The circuit of claim 1 formed on a semiconductor substrate, said trench extending completely through said substrate.
5. The circuit of claim 4 including a dielectric layer on the upper surface of said substrate.
6. The circuit of claim 1 including a trench fill material in said trench.
7. The circuit of claim 6 wherein said trench fill material is amorphous silicon dioxide.
8. The circuit of claim 1 wherein said circuit includes a semiconductor substrate and said trench extends into said substrate from a back side of said substrate.
9. The circuit of claim 8 wherein said trench extends from the back side of said substrate completely through said substrate.
10. The circuit of claim 9 wherein said trench is filled with a heat insulating fill material.
11. An integrated circuit comprising:
a semiconductor substrate;
a first region of said substrate including a first element that is sensitive to heat;
a second region of said substrate including a second element that generates heat; and
a trench arranged between said first and second regions, said trench extending completely through said substrate.
12. The circuit of claim 11 wherein said substrate includes a top side and a back side and said trench extends from said back side to said top side.
13. The circuit of claim 11 including a dielectric layer disposed over an upper surface of said substrate and over said trench.
14. The circuit of claim 11 wherein said trenche is filled with a trench fill material.
15. The circuit of claim 14 wherein said trench fill material is amorphous silicon dioxide.
16. The circuit of claim 11 , further comprising:
a dielectric layer disposed over a top surface of the substrate, a surface of the dielectric layer acting as a stop for the trench.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/964,386 US20050046014A1 (en) | 2002-08-01 | 2004-10-12 | Isolating temperature sensitive components from heat sources in integrated circuits |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/209,986 US6822325B2 (en) | 2002-08-01 | 2002-08-01 | Isolating temperature sensitive components from heat sources in integrated circuits |
US10/964,386 US20050046014A1 (en) | 2002-08-01 | 2004-10-12 | Isolating temperature sensitive components from heat sources in integrated circuits |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/209,986 Division US6822325B2 (en) | 2002-08-01 | 2002-08-01 | Isolating temperature sensitive components from heat sources in integrated circuits |
Publications (1)
Publication Number | Publication Date |
---|---|
US20050046014A1 true US20050046014A1 (en) | 2005-03-03 |
Family
ID=31187187
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/209,986 Expired - Fee Related US6822325B2 (en) | 2002-08-01 | 2002-08-01 | Isolating temperature sensitive components from heat sources in integrated circuits |
US10/964,386 Abandoned US20050046014A1 (en) | 2002-08-01 | 2004-10-12 | Isolating temperature sensitive components from heat sources in integrated circuits |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/209,986 Expired - Fee Related US6822325B2 (en) | 2002-08-01 | 2002-08-01 | Isolating temperature sensitive components from heat sources in integrated circuits |
Country Status (1)
Country | Link |
---|---|
US (2) | US6822325B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080006913A1 (en) * | 2006-07-07 | 2008-01-10 | Infineon Technologies Austria Ag | Integrated semiconductor chip with lateral thermal insulation |
JP2009260205A (en) * | 2008-03-17 | 2009-11-05 | Ricoh Co Ltd | Light source device, optical scanning device, and image forming apparatus |
US9317643B2 (en) | 2014-05-22 | 2016-04-19 | International Business Machines Corporation | Technology for temperature sensitive components in thermal processing |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7728899B2 (en) * | 2004-10-07 | 2010-06-01 | Shimadzu Corporation | Image sensor, and image pickup apparatus using same, and manufacturing method for manufacturing image sensor |
US7654311B2 (en) * | 2004-10-20 | 2010-02-02 | University Of Maryland | Thermal management of systems having localized regions of elevated heat flux |
TW200807652A (en) * | 2006-04-20 | 2008-02-01 | Koninkl Philips Electronics Nv | Thermal isolation of electronic devices in submount used for LEDs lighting applications |
FR2901407A1 (en) * | 2006-05-18 | 2007-11-23 | Commissariat Energie Atomique | Integrated circuit e.g. complementary MOS logic circuit, for e.g. silicon on insulator substrate, has evacuating unit evacuating heat and including cooling wall in electrically insulating material |
CN101933410B (en) * | 2008-01-31 | 2013-10-16 | 惠普开发有限公司 | Insulating aperture in printed circuit boards |
FR2943416B1 (en) * | 2009-03-23 | 2012-10-19 | Ijinus | TEMPERATURE SENSOR |
BR112013017693B1 (en) | 2011-01-14 | 2020-05-12 | Philips Lighting Holding B.V. | LIGHTING DEVICE |
KR20140019043A (en) * | 2012-06-29 | 2014-02-14 | 삼성디스플레이 주식회사 | Flat panel display device |
JP6252873B2 (en) * | 2015-03-27 | 2017-12-27 | 株式会社オートネットワーク技術研究所 | In-vehicle distribution board, electrical junction box, and charge / discharge controller |
US9673275B2 (en) | 2015-10-22 | 2017-06-06 | Qualcomm Incorporated | Isolated complementary metal-oxide semiconductor (CMOS) devices for radio-frequency (RF) circuits |
US10629512B2 (en) * | 2018-06-29 | 2020-04-21 | Xilinx, Inc. | Integrated circuit die with in-chip heat sink |
IT201900001201A1 (en) * | 2019-01-28 | 2020-07-28 | St Microelectronics Srl | SEMICONDUCTOR PLATE WITH IMPROVED THERMAL INSULATION BETWEEN A POWER PORTION AND A PERIPHERAL PORTION, MANUFACTURING METHOD, AND PACKAGE HOUSING THE PLATE |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3769562A (en) * | 1972-02-07 | 1973-10-30 | Texas Instruments Inc | Double isolation for electronic devices |
US5900649A (en) * | 1995-02-18 | 1999-05-04 | Hewlett-Packard Company | Electronic assembly having improved thermal characteristics |
US6127241A (en) * | 1997-12-13 | 2000-10-03 | Hyundai Electronics Industries Co., Ltd. | Trench isolation structure and fabrication method thereof |
US6265285B1 (en) * | 2000-10-25 | 2001-07-24 | Vanguard International Semiconductor Corporation | Method of forming a self-aligned trench isolation |
US6921704B1 (en) * | 2003-11-05 | 2005-07-26 | Advanced Micro Devices, Inc. | Method for improving MOS mobility |
-
2002
- 2002-08-01 US US10/209,986 patent/US6822325B2/en not_active Expired - Fee Related
-
2004
- 2004-10-12 US US10/964,386 patent/US20050046014A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3769562A (en) * | 1972-02-07 | 1973-10-30 | Texas Instruments Inc | Double isolation for electronic devices |
US5900649A (en) * | 1995-02-18 | 1999-05-04 | Hewlett-Packard Company | Electronic assembly having improved thermal characteristics |
US6127241A (en) * | 1997-12-13 | 2000-10-03 | Hyundai Electronics Industries Co., Ltd. | Trench isolation structure and fabrication method thereof |
US6265285B1 (en) * | 2000-10-25 | 2001-07-24 | Vanguard International Semiconductor Corporation | Method of forming a self-aligned trench isolation |
US6921704B1 (en) * | 2003-11-05 | 2005-07-26 | Advanced Micro Devices, Inc. | Method for improving MOS mobility |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080006913A1 (en) * | 2006-07-07 | 2008-01-10 | Infineon Technologies Austria Ag | Integrated semiconductor chip with lateral thermal insulation |
DE102006031539A1 (en) * | 2006-07-07 | 2008-01-17 | Infineon Technologies Austria Ag | Integrated semiconductor chip with lateral thermal insulation |
US7781828B2 (en) | 2006-07-07 | 2010-08-24 | Infineon Technologies Austria Ag | Integrated semiconductor chip with lateral thermal insulation |
DE102006031539B4 (en) * | 2006-07-07 | 2011-09-29 | Infineon Technologies Austria Ag | Integrated semiconductor chip with lateral thermal insulation and substrate contact |
JP2009260205A (en) * | 2008-03-17 | 2009-11-05 | Ricoh Co Ltd | Light source device, optical scanning device, and image forming apparatus |
US9317643B2 (en) | 2014-05-22 | 2016-04-19 | International Business Machines Corporation | Technology for temperature sensitive components in thermal processing |
US9563739B2 (en) | 2014-05-22 | 2017-02-07 | International Business Machines Corporation | Technology for temperature sensitive components in thermal processing |
Also Published As
Publication number | Publication date |
---|---|
US6822325B2 (en) | 2004-11-23 |
US20040021198A1 (en) | 2004-02-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |