JP4574821B2 - 半導体装置及び薄膜 - Google Patents

半導体装置及び薄膜 Download PDF

Info

Publication number
JP4574821B2
JP4574821B2 JP2000278617A JP2000278617A JP4574821B2 JP 4574821 B2 JP4574821 B2 JP 4574821B2 JP 2000278617 A JP2000278617 A JP 2000278617A JP 2000278617 A JP2000278617 A JP 2000278617A JP 4574821 B2 JP4574821 B2 JP 4574821B2
Authority
JP
Japan
Prior art keywords
film
interlayer insulating
thin film
semiconductor device
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000278617A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001313335A5 (enExample
JP2001313335A (ja
Inventor
隆 杉野
昌樹 楠原
優 梅田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Watanabe Shoko KK
Original Assignee
Watanabe Shoko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Watanabe Shoko KK filed Critical Watanabe Shoko KK
Priority to JP2000278617A priority Critical patent/JP4574821B2/ja
Publication of JP2001313335A publication Critical patent/JP2001313335A/ja
Publication of JP2001313335A5 publication Critical patent/JP2001313335A5/ja
Application granted granted Critical
Publication of JP4574821B2 publication Critical patent/JP4574821B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP2000278617A 2000-02-25 2000-09-13 半導体装置及び薄膜 Expired - Fee Related JP4574821B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000278617A JP4574821B2 (ja) 2000-02-25 2000-09-13 半導体装置及び薄膜

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000049291 2000-02-25
JP2000-49291 2000-02-25
JP2000278617A JP4574821B2 (ja) 2000-02-25 2000-09-13 半導体装置及び薄膜

Publications (3)

Publication Number Publication Date
JP2001313335A JP2001313335A (ja) 2001-11-09
JP2001313335A5 JP2001313335A5 (enExample) 2008-05-29
JP4574821B2 true JP4574821B2 (ja) 2010-11-04

Family

ID=26586100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000278617A Expired - Fee Related JP4574821B2 (ja) 2000-02-25 2000-09-13 半導体装置及び薄膜

Country Status (1)

Country Link
JP (1) JP4574821B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4497323B2 (ja) * 2006-03-29 2010-07-07 三菱電機株式会社 プラズマcvd装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6337637A (ja) * 1986-08-01 1988-02-18 Fujitsu Ltd 多層配線構造の半導体装置および製法
JPH0499049A (ja) * 1990-08-06 1992-03-31 Kawasaki Steel Corp 半導体装置
JP2001015595A (ja) * 1999-06-29 2001-01-19 Mitsubishi Electric Corp 半導体装置

Also Published As

Publication number Publication date
JP2001313335A (ja) 2001-11-09

Similar Documents

Publication Publication Date Title
KR920005320B1 (ko) 캐패시터 및 그 제조방법
TWI311772B (enExample)
US6593656B2 (en) Multilevel copper interconnects for ultra large scale integration
JP2000003885A (ja) 改良型薄膜誘電体を使用して電界効果デバイスおよびコンデンサを製造する方法および得られるデバイス
US5763948A (en) Semiconductor apparatus including a tin barrier layer having a (III) crystal lattice direction
KR100596794B1 (ko) 반도체 소자의 금속 배선 형성방법
US9379061B2 (en) High density dielectric etch-stop layer
JPH06244185A (ja) 配線構造とその製法
JP4574821B2 (ja) 半導体装置及び薄膜
US6878619B2 (en) Method for fabricating semiconductor device
CN1881577B (zh) 半导体器件及其制造方法
JPS60123060A (ja) 半導体装置
US20170148740A1 (en) Advanced metallization for damage repair
US8334204B2 (en) Semiconductor device and manufacturing method therefor
US7205634B2 (en) MIM structure and fabrication process with improved capacitance reliability
US20040150108A1 (en) Low resistance barrier for a microelectronic component and method for fabricating the same
JP2000114263A (ja) 半導体集積回路装置およびその製造方法
JPH04324636A (ja) 半導体装置およびその製造方法
JPH01239940A (ja) 半導体装置
US20040155348A1 (en) Barrier structure for copper metallization and method for the manufacture thereof
JPH06196573A (ja) 半導体装置の製造方法
JPH0346257A (ja) 半導体装置
JPH0346231A (ja) 半導体装置
CN121011594A (zh) 存储器件、互连结构及其制备方法
KR20250139343A (ko) 배리어 및 라이너 층들의 플라즈마 처리

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070213

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080229

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080411

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090520

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090527

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090727

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091125

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100125

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100728

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100819

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130827

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees