JP4574295B2 - 発光装置の作製方法 - Google Patents

発光装置の作製方法 Download PDF

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Publication number
JP4574295B2
JP4574295B2 JP2004264020A JP2004264020A JP4574295B2 JP 4574295 B2 JP4574295 B2 JP 4574295B2 JP 2004264020 A JP2004264020 A JP 2004264020A JP 2004264020 A JP2004264020 A JP 2004264020A JP 4574295 B2 JP4574295 B2 JP 4574295B2
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Japan
Prior art keywords
layer
silicon
film
light
hole injection
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Expired - Fee Related
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JP2004264020A
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Japanese (ja)
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JP2005116518A (ja
JP2005116518A5 (https=
Inventor
舜平 山崎
徹 高山
直哉 坂本
健吾 秋元
恵司 佐藤
哲紀 丸山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004264020A priority Critical patent/JP4574295B2/ja
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Publication of JP2005116518A5 publication Critical patent/JP2005116518A5/ja
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Publication of JP4574295B2 publication Critical patent/JP4574295B2/ja
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JP2004264020A 2003-09-19 2004-09-10 発光装置の作製方法 Expired - Fee Related JP4574295B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004264020A JP4574295B2 (ja) 2003-09-19 2004-09-10 発光装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003329201 2003-09-19
JP2004264020A JP4574295B2 (ja) 2003-09-19 2004-09-10 発光装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010086652A Division JP4906142B2 (ja) 2003-09-19 2010-04-05 発光装置

Publications (3)

Publication Number Publication Date
JP2005116518A JP2005116518A (ja) 2005-04-28
JP2005116518A5 JP2005116518A5 (https=) 2006-10-12
JP4574295B2 true JP4574295B2 (ja) 2010-11-04

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ID=34554686

Family Applications (1)

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JP2004264020A Expired - Fee Related JP4574295B2 (ja) 2003-09-19 2004-09-10 発光装置の作製方法

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JP (1) JP4574295B2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4664670B2 (ja) 2004-12-24 2011-04-06 株式会社東芝 半導体装置
JP5210501B2 (ja) * 2005-06-01 2013-06-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7485511B2 (en) 2005-06-01 2009-02-03 Semiconductor Energy Laboratory Co., Ltd. Integrated circuit device and method for manufacturing integrated circuit device
TWI481308B (zh) 2007-09-27 2015-04-11 Semiconductor Energy Lab 發光元件，發光裝置，與電子設備

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11307261A (ja) * 1998-04-16 1999-11-05 Tdk Corp 有機ｅｌ素子
JP2000100575A (ja) * 1998-07-24 2000-04-07 Tdk Corp 有機ｅｌ素子
JP2000108244A (ja) * 1998-10-05 2000-04-18 Asahi Glass Co Ltd 透明導電膜とその製造方法および透明導電膜付き基体
JP2000276950A (ja) * 1999-03-19 2000-10-06 Toyota Central Res & Dev Lab Inc 透明導電薄膜
JP2001176674A (ja) * 1999-12-14 2001-06-29 Tdk Corp 有機ｅｌ素子
JP2001176673A (ja) * 1999-12-14 2001-06-29 Tdk Corp 有機ｅｌ素子
JP4713010B2 (ja) * 2000-05-08 2011-06-29 株式会社半導体エネルギー研究所 発光装置及びその作製方法
JP2002260447A (ja) * 2000-11-17 2002-09-13 Furuya Kinzoku:Kk 透明導電膜形成用材料とその製造方法、透明導電膜、タッチパネルとその製造方法、プラズマディスプレイとその製造方法、太陽電池とその製造方法、導電性フィルムとその製造方法、熱線反射ガラスとその製造方法、液晶表示装置とその製造方法、無機エレクトロルミネッセンス素子とその製造方法、及び、有機エレクトロルミネッセンス素子とその製造方法
JP2002208479A (ja) * 2001-01-05 2002-07-26 Toppan Printing Co Ltd 有機ｌｅｄ素子用中間抵抗膜付基板および有機ｌｅｄ素子

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Publication number Publication date
JP2005116518A (ja) 2005-04-28

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